• Title/Summary/Keyword: VCSELs

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Particular aspects of drivers for VCSELs operating at multi-Gb/s

  • Kyriakis-Bitzaros, Efstathios D.;Katsafouros, Stavros G.;Halkias, George
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.2 no.1
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    • pp.82-86
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    • 2002
  • It is demonstrated that the conventional current-pulse laser drivers are not adequate in driving VCSELs operating at multi-Gb/s speeds. Simulation results, including the bonding parasitics, show that high-performance VCSELs are more efficiently driven using voltage-pulse mode of operation. The optical output power is almost doubled in the voltage-mode of operation, while the total electrical power consumption of the transmitter decreases by 20%.

Tailoring the Static Characteristics of Implanted VCSELs with the Implant and Metal Aperture Radii (임플랜트 및 금속전극 반경에 따른 임플랜트 VCSEL 정특성의 변화)

  • Kim, Tae-Yong;Kim, Sang-Bae;Park, Bun-Jae;Son, Jeong-Hwan
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.7
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    • pp.37-41
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    • 2004
  • We have formulated an empirical analytic model for the static characteristics of implanted vertical-cavity surface-emitting lasers (VCSELs). Specifically, we have derived analytic formulas for the threshold current, slope efficiency, dynamic resistance, and the output power and forward voltage at the operation current of 12 ㎃ in terms of the implant and metal-aperture radii by fitting the measured results. The radii of the metal aperture and implant mask of the 850 nm VCSELs range from 4 to 12.5 ${\mu}{\textrm}{m}$ and 7 to 17.5 ${\mu}{\textrm}{m}$ respectively. The model shows the way of tailoring the VCSEL characteristics by changing the mask dimensions only.

Mode Behavior of Circular Vertical-Cavity Surface-Emitting Laser (원형 수직 캐비티 표면 광방출 레이저의 모드특성)

  • Ho, Kwang-Chun
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.12 no.1
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    • pp.51-56
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    • 2012
  • The resonance properties of circular vertical-cavity surface-emitting lasers (VCSELs) are studied by using a newly developed equivalent network approach. Optical parameters, such as the stop-band or the reflectivity of periodic Bragg mirrors and the resonance wavelength, are explored for the design of these structures. To evaluate the differential quantum efficiency and the threshold current density, a transverse resonance condition of circular modal transmission-line theory is also utilized. This approach dramatically reduces the computational time as well as gives an explicit insight to explore the optical characteristics of circular VCSELs.

All-optical Flip-flop Operation Based on Polarization Bistability of Conventional-type 1.55-㎛ Wavelength Single-mode VCSELs

  • Lee, Seoung-Hun;Jung, Hae-Won;Kim, Kyong-Hon;Lee, Min-Hee
    • Journal of the Optical Society of Korea
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    • v.14 no.2
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    • pp.137-141
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    • 2010
  • We report, for the first time to our knowledge, observation of polarization bistability from 1.55-${\mu}m$ wavelength single-mode VCSELs of a conventional cylinder-shape under control of their driving current, and demonstration of all-optical flip-flop (AOFF) operations based on the bistability with optical set and reset pulse injection at a 50 MHz switching frequency. The injection pulse energy was less than 14 fJ. The average on-off contrast ratio of the flip-flopped signals was about 7 dB. These properties of the VCSELs will be potentially useful for future high-speed all-optical signal processing applications.

Modelling the Mode Behavior of Circular Vertical-Cavity Surface-Emitting Laser

  • Ho, Kwang-Chun
    • International Journal of Internet, Broadcasting and Communication
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    • v.4 no.2
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    • pp.22-27
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    • 2012
  • The design characteristics of circular vertical-cavity surface-emitting lasers are studied by using a newly developed equivalent network. Optical parameters, such as the stop-band or the reflectivity of periodic mirrors and the resonance wavelength, are explored for the design of these structures. To evaluate the differential quantum efficiency and the threshold current density, a transverse resonance condition of modal transmission-line theory is also utilized. This approach dramatically reduces the computational time as well as gives an explicit insight to explore the optical characteristics of circular vertical-cavity surface-emitting lasers (VCSELs).

Relationship between Transverse-Mode Behavior and Dynamic Characteristics in Multi-Mode VCSELs (다중모드 VCSEL의 모드 특성과 동특성 사이의 관계)

  • Kim Bong-Seok;Kim Sang-Bae
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.12
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    • pp.19-26
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    • 2005
  • We have studied the relationship between static mode behavior and dynamic characteristics of multiple transverse-mode VCSELs by measuring the modal L-I and I-V characteristics. Dependence of the resonance frequencies of RIN (relative intensity noise) spectra on the injection current can be understood by modal L-I characteristics and mode-coupling effects. Each transverse mode behaves as an independent diode laser with the different threshold current in large active-area VCSELs, and the multiple-step turn-on is observed when step-current input is applied. This multiple-step turn-on is a result of different turn-on delay times of the transverse modes. Since the multiple-step turn-on increases the rise-time significantly, the wide active-area VCSELs are not suitable for high-speed optical transmitters unless the input current is adjusted for single transverse-mode operation.

High Power Single Mode Multi-Oxide Layer VCSEL with Optimized Thicknesses and Aperture Sizes of Oxide Layers

  • Yazdanypoor, Mohammad;Emami, Farzin
    • Journal of the Optical Society of Korea
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    • v.18 no.2
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    • pp.167-173
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    • 2014
  • A novel multi-oxide layer structure for vertical cavity surface emitting laser (VCSEL) structures is proposed to achieve higher single mode output power. The structure has four oxide layers with different aperture sizes and thicknesses. The oxide layer thicknesses are optimized simultaneously to reach the highest single mode output power. A heuristic method is proposed for plotting the influence of these variable changes on the operation of optical output power. A comprehensive optical-electrical thermal-gain self-consistent VCSEL model is used to simulate the continuous-wave operation of the multi-layer oxide VCSELs. A comparison between optimized VCSELs with different structures is presented. The results show that by using multi-oxide layers with different thicknesses, higher single-mode optical output power could be achieved in comparison with multi-oxide layer structures with the same thicknesses.

Optimum thickness of GaAs top layer in AlGaAs-based 850 nm VCSELs for 56 Gb/s PAM-4 applications

  • Yu, Shin-Wook;Kim, Sang-Bae
    • ETRI Journal
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    • v.43 no.5
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    • pp.923-931
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    • 2021
  • We studied the influence of GaAs top-layer thickness on the small-signal modulation response and 56 Gb/s four-level pulse-amplitude modulation eye quality of 850 nm vertical-cavity surface-emitting lasers (VCSELs). We considered the proportionality of the gain-saturation coefficient to the photon lifetime. The simulation results that employed the transfer-matrix method and laser rate equations led to the conclusion that the proportionality should be considered for proper explanation of the experimental results. From the obtained optical eyes, we could determine an optimum thickness of the GaAs top layer that rendered the best eye quality of VCSEL. We also compared two results: one result with a fixed gain-saturation coefficient and the other that considered the proportionality. The former result with the constant gain-saturation coefficient demonstrated a better eye quality and a wider optimum range of the GaAs top-layer thickness because the resultant higher damping reduced the relaxation oscillation.

On the Validity of the Effective Cavity Model with the Transfer Matrix Method as a Frame of Reference In VCSELs (수직 공진기 반도체 레이저에서 전달 행렬 방법과의 비교를 통한 유효 공진기 모델의 타당성 검토)

  • 김태용;김상배
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.7
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    • pp.31-36
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    • 2004
  • In comparison with in-plane lasers, predicting the output power and differential quantum efficiency of Vertical-Cavity Surface-Emitting Lasers(VCSELs) is very difficult due to the distributed Bragg reflector(DBR) layers. Therefore, effective cavity model and transfer matrix method have been adapted in order to calculate the output power and differential quantum efficiency The effective cavity model is inappropriate to calculate output power and differential quantum efficiency while it is practically adequate to calculate the threshold gain and threshold current density The reason is that the effective cavity model can not take account of the absorption in GaAs stack layer right below the metal aperture. In this paper, we have compared the threshold current and differential quantum efficiency calculated by using transfer matrix method with effective cavity model and we have made a study of the validity of the effective cavity model. Finally, we have confirmed the versatility of the transfer matrix method with these studies.