• Journal of the Korean Chemical Society
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• v.54 no.3
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• pp.291-294
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• 2010

In this study, we demonstrated high-efficiency blue organic light-emitting diodes (OLEDs) employing BCzVBi as a blue fluorescent dye doped into blue host material, DPVBi with various concentration. The optimized blue OLED device having high-efficiency was constructed with structure of NPB (500 ${\AA}$) / DPVBi:BCzVBi-6% (150 ${\AA}$)/$Alq_3$(300 ${\AA}$) / Liq (20 ${\AA}$) / Al (1000 ${\AA}$). The maximum luminescence of blue OLED was 13200 cd/$m^2$ at 13.8 V and current density and maximum efficiency were 26.4 mA/$cm^2$ at 1000 cd/$m^2$ and 4.24 cd/A at 3.9 V, respectively. Luminous efficiency shows two times higher than comparing with non-doped BCzVBi blue OLED whereas $CIE_{x,y}$ coordinate was similar with bare DPVBi blue OLED such as (0.16, 0.19). Electroluminescence of BCzVBi-6% doped blue OLED has two major peaks at 445 nm and 470 nm whereas pure DPVBi's blue peak appears at 456 nm and it is happened through endothermic Forster energy transfer by molecule's vibration between LUMO of DPVBi as host material and LUMO of BCzVBi as dopant in device.

• Transactions on Electrical and Electronic Materials
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• v.11 no.2
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• pp.85-88
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• 2010

Deep blue organic light emitting diodes (OLEDs) were fabricated using 5 wt.% doped BCzVBi with various blue host materials such as NPB, DPVBi, MADN and TPBi. A blue OLED device, using DPVBi as host material, was constructed via NPB ($500\;{\AA}$) / DPVBi:BCzVBi ($200\;{\AA}$) / Bphen ($300\;{\AA}$) / LiF ($20\;{\AA}$) / Al ($1,000\;{\AA}$) and it shows a maximum luminescence of $4,838\;cd/m^2$, a current density of $32.7\;mA/cm^2$, a luminous efficiency of 3.3 cd/A and CIExy coordinates of (0.19, 0.15) at 4.5 V whereas the luminous efficiencies and CIExy coordinates of other blue OLEDs using NPB, MADN and TPBi as host materials have 1.1, 2.6 and 2.0 cd/A and (0.15, 0.11), (0.15, 0.10) and (0.15, 0.10), respectively. Energy transfer mechanisms between BCzVBi and its host materials were discussed with an energy band structure of host materials.

• Smart Structures and Systems
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• v.33 no.2
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• pp.145-163
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• 2024

The evaluation of dynamic characteristics of bridges under operational traffic loads is a crucial aspect of bridge structural health monitoring. In the vehicle-bridge interaction (VBI) system, the vibration responses of bridge exhibit time-varying characteristics. To address this issue, an accurate time-frequency analysis method that combines the autoregressive power spectrum based empirical wavelet transform (AR-EWT) and local maximum synchrosqueezing transform (LMSST) is proposed to identify the time-varying instantaneous frequencies (IFs) of the bridge in the VBI system. The AR-EWT method decomposes the vibration response of the bridge into mono-component signals. Then, LMSST is employed to identify the IFs of each mono-component signal. The AR-EWT combined with the LMSST method (AR-EWT+LMSST) can resolve the problem that LMSST cannot effectively identify the multi-component signals with weak amplitude components. The proposed AR-EWT+LMSST method is compared with some advanced time-frequency analysis techniques such as synchrosqueezing transform (SST), synchroextracting transform (SET), and LMSST. The results demonstrate that the proposed AR-EWT+LMSST method can improve the accuracy of identified IFs. The effectiveness and applicability of the proposed method are validated through a multi-component signal, a VBI numerical model with a four-degree-of-freedom half-car, and a VBI model experiment. The effect of vehicle characteristics, vehicle speed, and road surface roughness on the identified IFs of bridge are investigated.

• Earthquakes and Structures
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• v.18 no.1
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• pp.1-14
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• 2020

The vehicle-bridge interaction (VBI) analysis might be cumbersome and computationally expensive in bridge engineering due to the necessity of solving large number of coupled system of equations. However, VBI analysis can provide valuable insights into the dynamic behavior of highway bridges under specific loading conditions. Hence, this paper presents a numerical study on the dynamic behavior of a conventional highway bridge under strong near-field and far-field earthquake motions considering the VBI effects. A recursive substructuring method, which enables solving bridge and vehicle equations of motion separately and suitable to be adapted to general purpose finite element softwares, was used. A thorough analysis that provides valuable information about the effect of various traffic conditions, vehicle velocity, road roughness and effect of soil conditions under far-field and near-field strong earthquake motions has been presented. A real-life concrete highway bridge was chosen for numerical demonstrations. In addition, sprung mass models of vehicles consist of conventional truck and car models were created using physical and dynamic properties adopted from literature. Various scenarios, of which the results may help to highlight the different aspects of the dynamic response of concrete highway bridges under strong earthquakes, have been considered.

• Broadcasting and Media Magazine
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• v.2 no.4
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• pp.4-7
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• 1997

• Structural Engineering and Mechanics
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• v.82 no.2
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• pp.191-204
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• 2022

A three-mass vehicle model including one rigid mass and two unsprung masses is adopted to predict the vehicle-bridge interaction (VBI) and to establish the nonlinear coupled governing equations. To overcome the numerical instability and large computation problems concerning the vehicle-bridge system, the perturbation method is used to convert the nonlinear coupled governing equations into a set of linear uncoupled equations. Formulas for bridge's natural frequencies considering both the VBI and the dynamic responses of bridge and vehicle are proposed. Compared with the numerical results obtained by the Newmark-β method, the theoretical solutions for natural frequencies and dynamic responses are validated. The effects of the important factors of unsprung mass, vehicle damping, surface irregularity on the natural frequencies and dynamic responses of bridge and vehicle are discussed, based on the theoretical solutions.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.140-142
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• 2011

• Annals of Clinical Neurophysiology
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• v.9 no.1
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• pp.1-4
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• 2007

Vertigo is an illusion of rotation, which results from an imbalance within the vestibular system. This review focuses on two common presentations of spontaneous vertigo: acute prolonged spontaneous vertigo and recurrent spontaneous vertigo. Common causes of acute prolonged spontaneous vertigo include vestibular neuritis, labyrinthitis, and brainstem or cerebellar stroke. The history and detailed neurological/neurotological examinations usually provide the key information for distinguishing between peripheral and central causes of vertigo. Brain MRI is indicated in any patient with acute vertigo accompanied by abnormal neurological signs, profound imbalance, severe headache, and central patterns of nystagmus. Recurrent spontaneous vertigo occurs when there is a sudden, temporary, and largely reversible impairment of resting neural activity of one labyrinth or its central connections, with subsequent recovery to normal or near-normal function. Meniere's disease, migrainous vertigo, and vertebrobasilar insufficiency (VBI) are common causes. The duration of the vertigo attack is a key piece of information in recurrent spontaneous vertigo. Vertigo of vascular origin, such as VBI, typically lasts for several minutes, whereas recurrent vertigo due to peripheral inner-ear abnormalities lasts for hours. Screening neurotological evaluations, and blood tests for autoimmune and otosyphilis are useful in assessment of recurrent spontaneous vertigo that are likely to be peripheral in origin.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.648-650
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• 2007

We demonstrate highly efficient White Polymer Electrophosphorescent Light-emitting Diode using newly developed green and red light emitting heteroleptic iridium complex, Ir-(pq)2tpy, and blue light emitting fluorescent dopant, BczVBi. The best luminous efficiency reached 28cd/A with maximum luminance of 87000cd/m2. The scheme for determining optimum device architecture and dopant concentrations were constructed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.284-284
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• 2012

본 연구에서는 다이오드 소자의 온도 증가에 따른 C-V 특성을 분석하였다. 180 kHz 주파수 조건에서 온도는 300 K에서 450 K까지 50 K 간격으로 가변하였다. 측정 결과 reverse bias 영역에서는 커패시턴스의 온도 의존성이 없었으나, forward bias 영역에서는 온도가 증가함에 따라 동일 전압에서의 커패시턴스가 증가하였다. 이로부터 온도가 증가 할수록 소자가 반전(inversion) 상태에서 축적(accumulation) 상태로 빨리 전환함을 확인하였으며, 1/C2-V 그래프로부터 온도 증가에 따른 전위장벽(Built-in potential, Vbi) 감소를 확인하였다. 전위장벽은 0.63 V에서 0.31 V로 온도 상승에 따라 약 0.1 V씩 감소하였다. 이는 energy band diagram에서 p-type 영역과 n-type 영역의 energy band 차가 감소해 공핍층 영역의 폭이 좁아짐을 의미한다. 공핍층의 두께 감소로 다이오드 전류의 급격한 증가뿐 아니라 위에서 언급한 바와 같은 C-V 특성을 보였다. 이번 연구에서는 기존의 보편화 된 I-V 측정을 통한 다이오드 소자 분석과는 달리 온도 변화에 따른 C-V 분석을 통해 소자 내부의 전위 장벽 및 공핍층 폭 감소에 따른 소자 특성 변화를 분석하였다.