• Journal of the Korean Ceramic Society
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• v.38 no.1
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• pp.100-105
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• 2001

An all solid-state thin film battery (TFB) was fabricated by growing, undoped and Pt-doped vanadium oxide cathode film ( $V_2$ $O_{5}$ ) on I $n_2$ $O_3$: Sn coated glass, respectively. Room temperature charge-discharge measurements based on Li/Lipon/ $V_2$ $O_{5}$ full-cell structure with a constant current clearly shows that the Pt-doped $V_2$ $O_{5}$ cathode film is superior, in terms of cyclibility. X-ray diffraction (XRD) results indicate that the Pt doping process induces a more random amorphous structure than an undoped $V_2$ $O_{5}$ film. In addition to its modified structure, the Pt-doped $V_2$ $O_{5}$ film has a smoother surface than the undoped sample. Compared to an undoped $V_2$ $O_{5}$ film, the Pt doped $V_2$ $O_{5}$ cathode film has a higher electron conductivity. We hypothesize that the addition of Pt alters electrochemical performance in a manner of making more random amorphous structure and gives an excess electron by replacing the $V^{+5}$. Possible mechanisms are discussed for the observed Pt doping effect on structural and electrochemical properties of vanadium oxide cathode films, which are grown on I $n_2$ $O_3$: Sn coated glass.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.975-978
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• 2003

The microwave dielectric properties and the microstructures on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ doped with $V_2$ $O_{5}$ were systematically investigated. B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics sintered at 920-96$0^{\circ}C$ were mainly consisted of orthorhombic and triclinic phases after addition of $V_2$ $O_{5}$. The apparent density increased slightly with increasing the $V_2$ $O_{5}$ addition. The dielectric constants($\varepsilon$$_{r}$) also increased with $V_2$ $O_{5}$ addition(30-45). The Q${\times}$ $f_{0}$ values measured on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics doped with $V_2$ $O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures were in the range of 920-960[$^{\circ}C$]. It was confirmed that the temperature coefficient of the resonant frequency($\tau$$_{f}$) can be adjusted from a positive value of +10ppm/$^{\circ}C$ to a negative value of -15ppm/$^{\circ}C$ by increasing the amount of $V_2$ $O_{5}$ Based on our experimental results, the B $i_{0.97}$T $m_{0.03}$Nb $O_4$(added $V_2$ $O_{5}$) ceramics can be applied to multilayer microwave devices at low sintering temperatures.ng temperatures.emperatures.ratures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.350-353
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• 2002

The microwave dielectric properties and the microstructures on $Bi_{0.97}Nb_{0.03}O_{4}$doped with $V_{2}O_{5}$ were systematically investigated. $Bi_{0.97}Tm_{0.03}Nb_{0.03}O_{4}$ ceramics sintered at $920-960^{\circ}C$were mainly consisted of orthorhombic and triclinic phases after addition of $V_{2}O_{5}$. The apparent density increased slightly with increasing the $V_{2}O_{5}$ addition. The dielectric $constants(\varepsilon_r)$ also increased with $V_{2}O_{5}$ addition(30-45). The $Q{\times}f_0$ values measured on $Bi_{0.97}Tm_{0.03}NbO_4$ ceramics doped with $V_{2}O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures are in the range of $920-960[^{\circ}C]$. It was confirmed the temperature coefficient of the resonant $frequency(\tau_f)$ can be adjusted from a positive value of $+10[ppm/^{\circ}C]$ to a negative value of $-15ppm/^{\circ}C$ by increasing the amount of $V_{2}O_{5}$. Based on our experimental results, the Bi0.97Tm0.03NbO4(added V2O5) ceramics can be applied to multilayer microwave devices at low sintering temperatures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.383-386
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• 1999

The importance of rechargeable lithium cells has been emphasized. So a large variety of materials has been discovered and evaluated for use as reversible cathodes and electroyltes. This paper examines the charge/discharge properties and the charge/discharge cycling life of Li$_2$O-P$_2$O-V$_2$O$_{5}$Li cells. In audition, DTA tests were carried out on Li$_2$O-P$_2$O-V$_2$O$_{5}$ glass. As a result the best performance was achieved when 0.3Li$_2$O-0.1P$_2$O$_{5}$-0.6V$_2$O$_{5}$Li cells was mixed with SP270. that is discharge capacity of 240mAh/g have been achieved. In addition this battery exhibited good cycling performance. Considering these results we expected utilization of the Li$_2$O-P$_2$O-V$_2$O$_{5}$ glass as a cathode material in a secondary battery.y battery.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.661-663
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• 2004

In this paper, we have investigated characteristics of C-V for double gate MOSFET with main gate and side gate by the variation of side sate length and side gate voltage. Main gate voltage is changed from -5V to +5V. We know that characteristics of C-V is good under the condition of LSG=70nm, VSG=3V, VD=2V. We have analyze characteristics of device by ISE-TCAD.

• Journal of the Korean Ceramic Society
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• v.48 no.4
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• pp.303-306
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• 2011

[ $V_2O_5$ ]doped Karrooite pigments were synthesized by the solid state method to get stabilized brown pigment in oxidation and reduction atmosphere. Optimum substitution condition and limited dopant with $V_2O_5$ for Karrooite pigment was investigated. With calcination at $1250^{\circ}C{\sim}1400^{\circ}C$, compositions were designed varying $V_2O_5$ molar ratio by increasing 0.02mole to the formula $Mg_1-xTi_2-xM_{2x}O_5$(x = 0.01~0.09 mole). Synthesized pigments were analyzed by XRD, Raman spectroscopy and UV-vis. When $V_2O_5$ was doped from 0.01 to 0.05 mole, single phase of Karrooite was observed at temperature $1300^{\circ}C$ and soaking time 4h by Raman spectroscopy. However, it was found that excess $VO_2$ peak appeared with 0.07 and 0.09 mole of $V_2O_5$ doped to $MgTi_2O_5$. This result indicated that the maximum limit of solid solution is 0.05 mole $V_2O_5$. Karrooite pigments were applied as a ceramic pigment to achieve brown colors in lime magnesia glaze and lime barium graze at both of oxidation and reduction atmosphere. CIE color coordinates are $L^*$ = 40.34, $a^*$ = 9.94, $b^*$ = 21.40 in lime magnesia glaze.

• Animal cells and systems
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• v.15 no.2
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• pp.131-138
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• 2011

Redox regulation is one of the ubiquitous mechanisms to modulate ion channels. We here investigated how 5,5'-dithio-bis (2-nitrobenzoic acid), a cysteine specific oxidizing reagent, modulates $Ca_v3.1$ and $Ca_v3.2$ T-type $Ca^{2+}$ channels expressed in Xenopus oocytes. Application of the reagent inhibited $Ca_v3.1$ and $Ca_v3.2$ currents in a dose-dependent manner. The oxidizing reagent (1 mM) reduced the peak amplitude of $Ca_v3.1$ and $Ca_v3.2$ currents by ~50% over 2-3 minutes and the decreased currents were fully recovered upon washout of it. The reagent slowed the activation and inactivation kinetics of $Ca_v3.1$, $Ca_v3.2$, and $Ca_v3.3$ channel currents. Notably, the reagent positively shifted both activation and steady-state inactivation curves of $Ca_v3.1$, while it did not those of $Ca_v3.2$. Utilizing chimeric channels from $Ca_v3.1$ and $Ca_v3.2$, we localized the domains III and IV of $Ca_v3.1$ responsible for the positive shifts of channel activation and steady-state inactivation. These findings provide hints relevant to the electrophysiological and molecular mechanisms accounting for the oxidative regulation of T-type channels.

• Journal of Radiation Protection and Research
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• v.11 no.2
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• pp.146-151
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• 1986

In this paper, general features and measured results of vacuum pressure on the vacuum system of 50 MeV proton KCCH-cyclotron which was installed in Korea Cancer Center Hospital are described. The vacuum system comprises five subgroups and the operating sequences are automatically controlled by EPROM-programmable controller. In normal operation, the obtained ultimate pressures of vacuum groups were $5{\times}10^{-6}mbar(I,\;II),\;2{\times}10^{-6}mbar(III),\;1.2{\times}10^{-5}mbar(IV),\;1.5{\times}10^{-6}mbar(V)$, respectively. It was confirmed that these pressures was enough to accelerate the 50 MeV-proton beam.

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.503-508
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• 2003

The purpose of this study is to investigate the effect of $V_2$$O_{5}$ addition on the Ag and Cu precipitation in the NiCuZn ferrite layers of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt% $V_2$$O_{5}$ -doped ferrite pastes. With increasing the $V_2$$O_{5}$ content and sintering temperature, Ag and Cu oxide coprecipitated more and more at the polished surface of ferrite layers during re-annealing at $840^{\circ}C$. It was thought that during the sintering process, V dissolved in the NiCuZn ferrite lattice and the Ag-Cu liquid phase of low melting point was formed in the ferrite layers due to the Cu segregation from the ferrite lattice and Ag diffusion from the internal electrode. During re-annealing at $840^{\circ}C$, the Ag-Cu liquid phase came out the polished surface of ferrite layers, and was decomposed into the isolated Ag particles and the Cu oxide phase during the cooling process.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.10
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• pp.1827-1832
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• 2017

To observe the characteristics to be a resistive memory of $V_2O_5$ deposited by oxygen various gas flows and annealed, the hysteresis curves of $V_2O_5$ were analyzed. The good resistive memory was obtained from the electrical characteristics of $V_2O_5$ films with the Schottky contact as a result of electron-hole pair, and the oxygen vacancy generated from the annealing process contributes the high quality of Schottky contact and the formation of resistive memories. The balanced Schottky contacts owing to the oxygen vacancy effect as the result of an ionic reaction were formed at the $V_2O_5$ film annealed at $150^{\circ}C$ and $200^{\circ}C$ and the balanced Schottky contact with negative to positive voltages enhanced the electrical operation with write/erase states according to the forward or reverse bias voltages for the resistive memory behavior due to the oxygen vacancy.