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http://dx.doi.org/10.6109/jkiice.2017.21.10.1827

Electrical Characteristics Analysis of Resistive Memory using Oxygen Vacancy in V2O5 Thin Film  

Oh, Teresa (Department of Semicnoductor Engineering, Cheongju University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.21, no.10, 2017 , pp. 1827-1832 More about this Journal
Abstract
To observe the characteristics to be a resistive memory of $V_2O_5$ deposited by oxygen various gas flows and annealed, the hysteresis curves of $V_2O_5$ were analyzed. The good resistive memory was obtained from the electrical characteristics of $V_2O_5$ films with the Schottky contact as a result of electron-hole pair, and the oxygen vacancy generated from the annealing process contributes the high quality of Schottky contact and the formation of resistive memories. The balanced Schottky contacts owing to the oxygen vacancy effect as the result of an ionic reaction were formed at the $V_2O_5$ film annealed at $150^{\circ}C$ and $200^{\circ}C$ and the balanced Schottky contact with negative to positive voltages enhanced the electrical operation with write/erase states according to the forward or reverse bias voltages for the resistive memory behavior due to the oxygen vacancy.
Keywords
Hysteresis; Resistive memory; Oxygen vacancy; Schottky contact;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
연도 인용수 순위
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