• Proceedings of the Korean Society of Broadcast Engineers Conference
• /
• 2021.06a
• /
• pp.154-156
• /
• 2021

최근 3차원 영상이 다양한 분야에서 활용되고 있으며, 이에 따라 3차원 영상에 대한 압축과 전송 방안에 대한 연구가 활발히 진행되고 있다. 국제 표준화 기구인 ISO/IEC 산하 Moving Picture Expert Group(MPEG)에서는 기존의 2차원 비디오 코덱을 이용하여 고밀도 포인트 클라우드 압축하는 방안인 V-PCC와 3DoF+ 영상을 압축하기 위한 방안인 MPEG Immersive Video(MIV)를 표준화 중에 있다. V-PCC와 MIV는 압축 방법의 유사성으로 인해 동일한 Volumetric Visual Video-based Coding(V3C) 형식으로 저장된다. 압축된 V3C 데이터를 효과적으로 저장하여 이용하기 위해서는 ISO based Media File Format(ISOBMFF) 캡슐화 과정이 필수적이다. 본 논문에서는 MPEG의 Carriage of V3C data 표준에 따라 V3C 데이터를 ISOBMFF로 캡슐화 실험을 진행하였으며, 실험에 대한 검증을 위하여 생성된 ISOBMFF 데이터를 V3C 데이터로 복원한 뒤, 디코딩 하여 확인하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.7 no.3
• /
• pp.487-493
• /
• 1997

Ti/sic(4H) Schottky barrier diodes were fabricated. The donor concentration and the built-in potential obtained by capacitance-voltage(C-V) measurement was about $2.0{\times}10^{15}{\textrm}{cm}^{-3}$ and 0.65 V, respectively. The ideality factor of 1.07 was obtained from the slope of current-voltage(I-V) characteristics at low current density. The breakdown field under the reverse bias voltage was about $1.7{\times}10^3V/{\textrm}{cm}$ and was very high. The barrier height of Ti for SiC(4H) was 0.91 V, which was determined by the analysis of the saturation current-temperature and the C-V characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.236-236
• /
• 2009

This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C - SiC thin film grown on Si substrates with thermal oxide layer using APCVD. Pd/poiy 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were $2\times10^{-3}\;A/cm^2$ and 0.58 eV, respectively. These devices could operate stably at about $400^{\circ}C$. According to $H_2$ concentrations, their barrier height($\Phi_{Bn}$) were changed 0.587 eV, 0.579 eV, 0.572 eV and 0.569 eV, respectively. the current was increased. Characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• Kyungpook Mathematical Journal
• /
• v.48 no.2
• /
• pp.287-302
• /
• 2008

The vertex set of a digraph D is denoted by V (D). A c-partite tournament is an orientation of a complete c-partite graph. A digraph D is called cycle complementary if there exist two vertex disjoint cycles $C_1$ and $C_2$ such that V(D) = $V(C_1)\;{\cup}\;V(C_2)$, and a multipartite tournament D is called weakly cycle complementary if there exist two vertex disjoint cycles $C_1$ and $C_2$ such that $V(C_1)\;{\cup}\;V(C_2)$ contains vertices of all partite sets of D. The problem of complementary cycles in 2-connected tournaments was completely solved by Reid [4] in 1985 and Z. Song [5] in 1993. They proved that every 2-connected tournament T on at least 8 vertices has complementary cycles of length t and ${\mid}V(T)\mid$ - t for all $3\;{\leq}\;t\;{\leq}\;{\mid}V(T)\mid/2$. Recently, Volkmann [8] proved that each regular multipartite tournament D of order ${\mid}V(D)\mid\;\geq\;8$ is cycle complementary. In this article, we analyze multipartite tournaments that are weakly cycle complementary. Especially, we will characterize all 3-connected c-partite tournaments with $c\;\geq\;3$ that are weakly cycle complementary.

• Journal of the Korean Ceramic Society
• /
• v.35 no.12
• /
• pp.1336-1336
• /
• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

• The Journal of Korean Society for Radiation Therapy
• /
• v.31 no.1
• /
• pp.51-56
• /
• 2019

Purpose: The usefulness of using single-electron radiation for secondary radiotherapy of breast cancer patients after surgery is assessed and the use of a combine of different energy. Methods and materials : In this study, 40 patients (group A) using energy 6 MeV and 9 MeV, and 19 patients (group B) using a combine of 9 MeV and 12 MeV were studied among 59 patients who performed secondary care using combine electronic radiation. Each patient in each group, 6 MeV, 9 MeV, Combine(6 MeV / 9 MeV) and 9 MeV, 12 MeV, Combine (9 MeV / 12 MeV) were developed in different ways, and the maximum doses delivered to the original hospital, D95, D5, and $V_3$, $V_5$, $V_{10}$ were compared. Result: The D95 mean value of Group A treatment plan was $785.33{\pm}225.37cGy$, $1121.79{\pm}87.02cGy$ at 9 MeV, and $1010.98{\pm}111.17cGy$ at 6 MeV / 9 MeV, and the mean value at 6 MeV / 9 MeV was most appropriate for the dose. The mean values of the low dose area $V_3$ and $V_5$ in the lung of the breast direction being treated were $3.24{\pm}3.49%$ and $0.72{\pm}1.55%$ at 6 MeV, the highest 9 MeV at $7.25{\pm}4.59%$, $3.07{\pm}2.64%$, the lowest at 6 MeV. Maximum and average lung dose was $727.78{\pm}137.27cGy$ at 6 MeV / 9 MeV, $49.16{\pm}24.44cGy$, highest 9 MeV at $998.97{\pm}114.35cGy$, $85.33{\pm}41.18cGy$, and lowest 6 MeV at $387.78{\pm}208.88cGy$, $9.27{\pm}6.60cGy$. The value of $V_{10}$ was all close to zero. Group B appeared in the pattern of Group A. Conclusion: Relative differences in low-dose areas of the lungs $V_3$ and $V_5$ were seen and were most effective in the dose transfer of tumor bed in the application of combined energy. It is thought that the method of using electronic energy in further radiation treatments for breast cancer is a more effective way to use the energy effect of limiting energy resources, and that if you think about it again, it could be a little more beneficial radiation treatment for patients.

• Proceedings of the Korean Society of Broadcast Engineers Conference
• /
• 2022.06a
• /
• pp.836-838
• /
• 2022

3D Point Cloud는 3D 콘텐츠를 더욱 실감 나게 표현하기 위한 데이터 포맷이다. Point Cloud 데이터는 3차원 공간상에 존재하는 데이터로 기존의 2D 영상에 비해 거대한 용량을 가지고 있다. 최근 대용량 Point Cloud의 3D 데이터를 압축하기 위해 V-PCC(Video-based Point Cloud Compression)와 같은 다양한 방법이 제시되고 있다. 따라서 Point Cloud 데이터의 원활한 전송 및 저장을 위해서는 V-PCC와 같은 압축 기술이 요구된다. V-PCC는 Point Cloud의 데이터들을 Patch로써 뜯어내고 2D에 Projection 시켜 3D의 영상을 2D 형식으로 변환하고 2D로 변환된 Point Cloud 영상을 기존의 2D 압축 코덱을 활용하여 압축하는 기술이다. 이 V-PCC로 변환된 2D 영상은 기존 2D 영상을 전송하는 방식을 활용하여 네트워크 기반 전송이 가능하다. 본 논문에서는 V-PCC 방식으로 압축한 V3C 데이터를 방송망으로 전송 및 소비하기 위해 MPEG Media Transport(MMT) Packet을 만드는 패킷화 방안을 제안한다. 또한 Server와 Client에서 주고받은 V3C(Visual Volumetric Video Coding) 데이터의 비트스트림을 비교하여 검증한다.

• Proceedings of the Korean Society of Broadcast Engineers Conference
• /
• 2020.11a
• /
• pp.166-168
• /
• 2020

MPEG 비디오 그룹은 MPEG-I 표준의 일부로 포인트 클라우드(Point Cloud) 압축을 위한 비디오 기반 포인트 클라우드 부호화(V-PCC)와 몰입형(immersive) 비디오 압축을 위한 MPEG Immersive Video(MIV) 표준을 개발하고 있다. 최근에는 포인트 클라우드 및 몰입형 비디오와 같은 체적형(volumetric) 비디오를 모두 압축할 수 있도록 V-PCC 와 MIV 를 통합한 V3C(Visual Volumetric Video-based Coding) 표준화를 진행하고 있다. 본 논문에서는 V3C 코덱을 사용한 3DoF+(3 Degree of Freedom plus) 비디오 부호화 방안을 분석한다. 또한 V3C 코덱의 2D 코덱으로 기존 HEVC 대신 VVC 를 사용할 경우의 부호화 성능 향상을 분석한다.

• Korean Chemical Engineering Research
• /
• v.51 no.3
• /
• pp.313-318
• /
• 2013

In order to investigate the effect of $V_2O_5$ loading of $V_2O_5-WO_3/TiO_2$ catalyst on the NO reduction and the formation of $N_2O$, the experimental study was carried out in a differential reactor using the powder catalyst. The NO reduction and the ammonia oxidation were, respectively, investigated over the catalysts compose of $V_2O_5$ content (1~8 wt%) based on the fixed composition of $WO_3$ (9 wt%) on $TiO_2$ powder. $V_2O_5-WO_3/TiO_2$ catalysts had the NO reduction activity even under the temperature of $200^{\circ}C$. However, the lowest temperature for NO reduction activity more than 99.9% to treat NO concentration of 700 ppm appeared at 340 with very limited temperature window in the case of 1 wt% $V_2O_5$ catalyst. And the temperature shifted to lower one as well as the temperature window was widen as the $V_2O_5$ content of the catalyst increased, and finally reached at the activation temperature ranged $220{\sim}340^{\circ}C$ in the case of 6 wt% $V_2O_5$ catalyst. The catalyst of 8 wt% $V_2O_5$ content presented lower activity than that of 8 wt% $V_2O_5$ content over the full temperature range. NO reduction activity decreased as the $V_2O_5$ content of the catalyst increased above $340^{\circ}C$. The active site for NO reduction over $V_2O_5-WO_3/TiO_2$ catalysts was mainly related with $V_2O_5$ particles sustained as the bare surface with relevant size which should be not so large to stimulate $N_2O$ formation at high temperature over $320^{\circ}C$ according to the ammonia oxidation. Currently, $V_2O_5-WO_3/TiO_2$ catalysts were operated in the temperature ranged $350{\sim}450^{\circ}C$ to treat NOx in the effluent gas of industrial plants. However, in order to save the energy and to reduce the secondary pollutant $N_2O$ in the high temperature process, the using of $V_2O_5-WO_3/TiO_2$ catalyst of content $V_2O_5$ was recommended as the low temperature catalyst which was suitable for low temperature operation ranged $250{\sim}320^{\circ}C$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2004.05b
• /
• pp.661-663
• /
• 2004

In this paper, we have investigated characteristics of C-V for double gate MOSFET with main gate and side gate by the variation of side sate length and side gate voltage. Main gate voltage is changed from -5V to +5V. We know that characteristics of C-V is good under the condition of LSG=70nm, VSG=3V, VD=2V. We have analyze characteristics of device by ISE-TCAD.