• Title/Summary/Keyword: V2X technology

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Synthesis of barium-doped PVC/Bi2WO6 composites for X-ray radiation shielding

  • Gholamzadeh, Leila;Sharghi, Hamed;Aminian, Mohsen Khajeh
    • Nuclear Engineering and Technology
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    • v.54 no.1
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    • pp.318-325
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    • 2022
  • In this study, composites containing undoped and barium-doped Bi2WO6:Ba2+were investigated for their shielding against diagnostic X-ray. At first, Bi2WO6 and barium-doped Bi2WO6 were synthesized with different weight percentages of barium oxide through a hydrothermal process. The as-synthesized nanostructures were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS) and Raman spectroscopy (RS). After that, some shields were generated with undoped and barium-doped Bi2WO6:Ba2+ nanostructure particles incorporated into polyvinyl chloride (PVC) polymer with different thicknesses and 15% weight of the nanostructure. Finally, the prepared samples were exposed to an X-ray tube at 40, 80, and 120 kV voltages, 10 mAs and, 44.5 cm SID (i.e. the distance from the X-ray beam source to the specimen). Linear and mass attenuation coefficients were also calculated for different samples. The results indicated that, among the samples, the one with 7.5 mmol barium-doped Bi2WO6 had the most attenuation at the voltage of 40kV, and the attenuation coefficients would increase with an increase in the amount of barium. The samples with 15 and 17.5 mmol barium-doped Bi2WO6 had higher attenuation than the others at 80 and 120 kV. Moreover, the half-value layer (HVL), tenth-value layer (TVL) and 0.25 mm lead equivalent thickness were calculated for all the samples. The lowest HVL value was for the sample with 7.5 mmol barium-doped Bi2WO6. As the result clearly show, an increment in the barium-doping content leads to a decrease in both HVL and TVL. In every three voltages, 0.25 mm lead equivalent thickness of the barium-doped composites (7.5 mmol and 15 mmol) had less than the other composites. The lowest value of 0.25 mm lead equivalent thickness was 7.5 barium-doped in 40 kV voltage and 15 mmol barium-doped in 80 kV and 120 kV voltages. These results were obtained only for 15% weight of the nanostructure.

Recent Progress on Sodium Vanadium Fluorophosphates for High Voltage Sodium-Ion Battery Application

  • Yuvaraj, Subramanian;Oh, Woong;Yoon, Won-Sub
    • Journal of Electrochemical Science and Technology
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    • v.10 no.1
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    • pp.1-13
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    • 2019
  • Na-ion batteries are being considered as promising cost-effective energy storage devices for the future compared to Li-ion batteries owing to the crustal abundance of Na-ion. However, the large radius of the Na ion result in sluggish electrode kinetics that leads to poor electrochemical performance, which prohibits the use of these batteries in real time application. Therefore, identification and optimization of the anode, cathode, and electrolyte are essential for achieving high-performance Na-ion batteries. In this context, the current review discusses the suitable high-voltage cathode materials for Na-ion batteries. According to a recent research survey, sodium vanadium fluorophosphate (NVPF) compounds have been emphasized for use as a high-voltage Na-ion cathode material. Among the fluorophosphate groups, $Na_3V_2(PO_4)_2F_3$ exhibited the high theoretical capacity ($128mAh\;g^{-1}$) and working voltage (~3.9 V vs. $Na/Na^+$) compared to the other fluorophosphates and $Na_3V_2(PO_4)_3$. Here, we have also highlighted the classification of Fluorophosphates, NVPF composite with carbonaceous materials, the appropriate synthesis methods and how these methods can enhance the electrochemical performance. Finally, the recent developments in NVPF for the application in energy storage devices and its outlook are summarized.

Removal of NOx using electron beam process with NaOH spraying

  • Shin, Jae Kyeong;Jo, Sang-Hee;Kim, Tae-Hun;Oh, Yong-Hwan;Yu, Seungho;Son, Youn-Suk;Kim, Tak-Hyun
    • Nuclear Engineering and Technology
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    • v.54 no.2
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    • pp.486-492
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    • 2022
  • Nitrogen oxides (NOx; NO and NO2) are major air pollutants and can cause harmful effects on the human body. Electron Beam Flue Gas Treatment (EBFGT) is a technology that generates electrons with an energy of 0.5-1 MeV using electron accelerators and effectively processes exhaust gases. In this study, NOx was removed using an electron beam accelerator with spraying additives (NaOH and NH4OH). NO and NO2 were 100% and more than 94% removed, respectively, at an electron beam absorbed dose of 20 kGy and an additive concentration of 0.02 M (mol/L). In most cases, NOx was removed better with lower initial NOx concentrations and higher electron beam absorbed doses. As the irradiation strength (mA) of the electron beam increases, the probability of electron impact on the material accordingly rises, which may lead to increase removal efficiency. The results of the present study show that the continuous electron beam process using additives achieved more effective removal efficiency than either individual process (wet-scrubbing or EB irradiation only).

Double Layer Anti-reflection Coating for Crystalline Si Solar Cell (결정질 실리콘 태양전지를 위한 이층 반사방지막 구조)

  • Park, Je Jun;Jeong, Myeong Sang;Kim, Jin Kuk;Lee, Hi-Deok;Kang, Min Gu;Song, Hee-eun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.1
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    • pp.73-79
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    • 2013
  • Crystalline silicon solar cells with $SiN_x/SiN_x$ and $SiN_x/SiO_x$ double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of $SiN_x$ and $SiO_x$ layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9~2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of $1,370{\mu}m$. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300~1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with $SiN_x$ single layer. With the completed solar cell with $SiN_x/SiN_x$ of n= 2.2/1.9 and $SiN_x/SiO_x$ of n= 2.2/1.46, the electrical characteristics was improved as ${\Delta}V_{oc}$= 3.7 mV, ${\Delta}_{sc}=0.11mA/cm^2$ and ${\Delta}V_{oc}$=5.2 mV, ${\Delta}J_{sc}=0.23mA/cm^2$, respectively. It led to the efficiency improvement as 0.1% and 0.23%.

Effect of Niobium on the Electronic Properties of Passive Films on Zirconium Alloys

  • Kim, Bo Young;Kwon, Hyuk Sang
    • Corrosion Science and Technology
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    • v.2 no.2
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    • pp.68-74
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    • 2003
  • The effects of Niobium on the structure and properties(especially electric properties) of passive film of Zirconium alloys in pH 8.5 buffer solution are examined by the photo-electrochemical analysis. For Zr-xNb alloys (x = 0, 0.45, 1.5, 2.5 wt%), photocurrent began to increase at the incident energy of 3.5 ~ 3.7 eV and exhibited the $1^{st}$ peak at 4.3 eV and the $2^{nd}$ peak at 5.7 eV. From $(i_{ph}hv)^{1/2}$ vs. hv plot, indirect band gap energies $E_g{^1}$= 3.01~3.47 eV, $E_g{^2}$= 4.44~4.91 eV were obtained. With increasing Nb content, the relative photocurrent intensity of $1^{st}$ peak significantly increased. Compared with photocurrent spectrum of thermal oxide of Zr-2.5Nb, It was revealed that $1^{st}$ peak in photocurrent spectrum for the passive film formed on Zr-Nb alloy was generated by two types of electron transitions; the one caused by hydrous $ZrO_2$ and the other created by Nb. Two electron transition sources were overlapped over the same range of incident photon energy. In the photocurrent spectrum for passive film formed on Zr-2.5Nb alloy in which Nb is dissolved into matrix by quenching, the relative photocurrent intensity of $1^{st}$ peak increased, which implies that dissolved Nb act as another electron transition source.

Sensing Characteristics of $SnO_{2}$ type CO sensors for combustion exhaust gases monitoring (연소배가스 모니터링을 위한 $SnO_{2}$계 CO센서의 검지특성)

  • Kim, I.J.;Han, S.D.;Lim, H.J.;Son, Y.M.
    • Journal of Sensor Science and Technology
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    • v.6 no.5
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    • pp.369-375
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    • 1997
  • $V_{2}O_{5}/ThO_{2}/Pd$-doped $SnO_{2}$ sensor has a good selectivity and stability to CO at high sensor temperature of about $500^{\circ}C$, and shows rapid response. In particular, many kinds of interference gases, such as $NO_{x}$, $C_{3}H_{8}$, $CH_{4}$ and $SO_{2}$ have been found to give only a slight influence on the sensor selectivity to CO gas sensitivity by doped $V_{2}O_{5}$ (3.0 wt.%). For the sensor we used well-known thick film technological route with $V_{2}O_{5}$(3.0 wt.%), Pd(1.0 wt.%) and $ThO_{2}$(l.5 wt.%) as catalytic materials. In the case of mixed $NO_{x}$-CO gases, as combustion exhaust gas, only CO detection by $SnO_{2}$ type semiconductor sensor is generally very difficult because of $NO_{x}$ interference. The developed sensors can use to measure the exhausting gas of the automobile or the boiler for the Air-to-Fuel ratio control.

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X-ray Sensitivity of Hybrid-type Sensor based on CaWO4-Selenium for Digital X-ray Imager

  • Park, Ji-Koon;Park, Jang-Yong;Kang, Sang-Sik;Lee, Dong-Gil;Kim, Jae-Hyung;Nam, Sang-Hee
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.4
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    • pp.133-137
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    • 2004
  • The development of digital x-ray detector has been extensively progressed for the application of various medical modalities. In this study, we introduce a new hybrid-type x-ray detector to improve problems of a conventional direct or indirect digital x-ray image technology, which composed of multi-layer structure using a CaWO$_4$ phosphor and amorphous selenium (a-Se) photoconductor. The leakage current of our detector was found to be ∼180 pA/cm$^2$ at 10 V/m, which was significantly reduced than that of a single a-Se detector. The x-ray sensitivity was measured as the value of 4230 pC/cm$^2$/mR at 10 V/m. We found that the parylene thin film between a CaWO$_4$ phosphor and an a-Se layer acts as an insulator to prevent charge injection from indium thin oxide (ITO) electrode into an a-Se layer under applied bias.

Comparison of Quality of Bologna Sausage Manufactured by Electron Beam or X-Ray Irradiated Ground Pork

  • Shin, Mee-Hye;Lee, Ju-Woon;Yoon, Young-Min;Kim, Jong Heon;Moon, Byeong-Geum;Kim, Jae-Hun;Song, Beom-Suk
    • Food Science of Animal Resources
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    • v.34 no.4
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    • pp.464-471
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    • 2014
  • Ground lean pork was irradiated by an electron beam or X-rays to compare the effects of two types of radiation generated by a linear accelerator on the quality of Bologna sausage as a model meat product. Raw ground lean pork was vacuum packaged at a thickness of 1.5 cm and irradiated at doses of 2, 4, 6, 8, or 10 kGy by an electron beam (2.5 MeV) or X-rays (5 MeV). Solubility of myofibrillar proteins, bacterial counts, and thiobarbituric acid reactive substance (TBARS) values were determined for raw meat samples. Bologna sausage was manufactured using the irradiated lean pork, and total bacterial counts, TBARS values, and quality properties (color differences, cooking yield, texture, and palatability) were determined. Irradiation increased the solubility of myofibrillar proteins in a dose-dependent manner (p<0.05). Bacterial contamination of the raw meat was reduced as the absorbed dose increased, and the reduction was the same for both radiation types. Differences were observed only between irradiated and non-irradiated samples (p<0.05). X-ray irradiation may serve as an alternative to gamma irradiation and electron beam irradiation.

Stacked Emissive 구조를 이용한 2-파장 방식의 백색 유기 발광다이오드

  • Jang, Ji-Geun;Kim, Hui-Won;Gang, Ui-Jeong;Sin, Se-Jin;An, Jong-Myeong;Sin, Hyeon-Gwan;Jang, Ho-Jeong
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2006.10a
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    • pp.190-197
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    • 2006
  • 2파장 백색 발광층의 구성에서 청색 재료로 GDI602 또는 GDI602: GDI691(2%)을, 황색 재료로 Alq3:Rubrene(10%)를 사용하여 새로운 백색 유기발광다이오드를 제작하고 이들의 특성을 분석하였다. 제작된 소자들은 12V의 구동전압에서 GDI602/A1q3:Rubrene(10%) 발광층을 갖는 경우 약 $950\;Cd/m^2$의 휘도와 0.8 lm/W의 효율을, GDI602:GDI691(2%)/Alq3:Rubrene 발광층을 갖는 경우 약 $1800\;Cd/m^2$의 휘도와 1.2 lm/W의 효율을 나타내었다. 또한 발광 스펙트럼의 특성으로는 인가전압에 따라 중심파장의 위치는 일정하나 2파장 사이의 상대적 세기가 변화되었으며, 인가전압이 증가할 경우 CIE 색좌표가 청색 방향으로 다소 이동되었다. GDI602/ Alq3:Rubrene(10%) 발광층을 갖는 소자의 경우 9V에서 x=0.33, y=0.32로, GDI602:GDI691(2%)/Alq3:Rubrene 발광층을 갖는 소자의 경우 6V에서 x=0.32, y=0.33으로 순수 백색광에 가까운 특성이 얻어졌다.

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The distribution of the molecular hydrogen in the Milky way

  • Jo, Young-Soo;Seon, Kwang-Il;Min, Kyoung-wook
    • The Bulletin of The Korean Astronomical Society
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    • v.41 no.2
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    • pp.40.1-40.1
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    • 2016
  • We present the far-ultraviolet fluorescent molecular hydrogen ($H_2$) emission map observed with FIMS/SPEAR for ~76% of the sky. The fluorescent $H_2$ emission is found to be saturated by strong dust extinction at the optically thick, Galactic plane region. However, the extinction-corrected intensity of fluorescent $H_2$ emission is found to have strong linear correlations with the well-known tracers of the cold interstellar medium, such as the E(B-V) color excess, neutral hydrogen column density N(HI), $H{\alpha}$ emission, and CO $J=1{\rightarrow}0$ emission. The all-sky molecular hydrogen column density map is also obtained using a photodissociation region model. We also derive the gas-to-dust ratio, hydrogen molecular fraction ($f_{H2}$), and $CO-to-H_2$ conversion factor ($X_{CO}$) of the diffuse interstellar medium. The gas-to-dust ratio is consistent with the standard value $5.8{\times}10^{21}atoms\;cm^{-2}mag^{-1}$, and the $X_{CO}$ tends to increase with E(B-V), but converges to the Galactic mean value $1.8{\times}10^{20}cm^{-2}K^{-1}km^{-1}s$ at optically thick regions with E(B-V)>2.0.

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