• 한국통신학회논문지
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• 제40권3호
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• pp.595-601
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• 2015

These days, research related to Intelligent Transportation System (ITS) technology is being widely considered. ITS is inevitable for future transportation systems to reduce accidents, congestion, and offer a smooth flow of traffic. The use of Visible Light Communication (VLC) in ITS systems has been considered widely because of its EMC/EMI free and LED infrastructure reusable properties. Among the VLC schemes, this study analyzed the performance of the Color Shift Keying (CSK) scheme under a Vehicle-to-Infrastructure (V2I) downlink scenario to verify the capability of CSK as a communication tool for ITS. By modeling daylight noise using the modified Blackbody radiation model, this study examined the performance of V2I VLC under daytime conditions. The relationship between BER, the communication distance, and the amount of ambient-light noises under the pre-described V2I scenario were determined by simulations.

• 한국결정성장학회지
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• 제13권3호
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• pp.105-110
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• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, $I_{2}$ ($D^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3 meV, The exciton peak, $I_{1}^{d}$ at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The $I_{1}^{d}$ peak was dominantly observed in the ZnSe/GaAs : Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs : Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a $(V_{se}-V_{zn})-V_{zn}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.120-123
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• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, $I_2$ ($D^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3 meV. The exciton peak, $I_1^d$, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The $I_1^d$ peak was dominantly observed in the ZnSe/GaAs:Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs:Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a $(V_{Se}-V_{Zn})-V_{Zn}$.

• 대한화학회지
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• 제29권4호
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• pp.372-381
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• 1985

치환 8-퀴놀린올의 옥소몰리브덴(V)착물을 합성하고 착물의 원소분석, 자외선스펙트럼, 전자스펙트럼 및 전도도를 측정하였고 옥소몰리브덴(VI)착물과 함께 질량분석을 행하여 비교 검토하였다. 옥소몰리브덴(V) 착물은 비전해질이고 몰리브덴-산소의 신축진동은 $940cm^{-1}$ 부근에서 강한 흡수띠가 나타나고 결정장전이와 전하이동 전이가 일어났다. 질량분석 결과로 Mo(V, VI)착물에서 몰리브덴과 리간드의 조성이 1:2임을 확인할 수 있었고 옥소몰리브덴(VI)착물에서는 1:1조성의 착물의 질량수가 나타나지만 옥소몰리브덴(V)에서는 일부만 확인되었다.

• 한국정보처리학회:학술대회논문집
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• 한국정보처리학회 2011년도 추계학술발표대회
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• pp.917-920
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• 2011

VANET은 V2V, V2I 통신을 통해 다양한 서비스를 제공하며, 차량은 여러 가지 서비스를 제공받아 안전하고 효율적인 운행을 할 수 있다. 다양한 서비스를 제공하고 이용하기 위해 안전하고 신뢰성 있는 V2V, V2I 통신이 보장되어야 하며, 이를 위해 많은 연구들이 진행되었다. 기존의 대부분의 연구들은 공개키 기반 암호시스템을 이용하였다. 하지만 VANET의 DSRC 프로토콜에 의하면 한 차량에서 짧은 순간에 매우 많은 메시지를 확인해야 하며, 따라서 매우 큰 연산량이 발생하게 된다. 또한 DSRC를 사용할 경우 서버와의 통신을 항상 보장할 수 없다. 본 논문에서는 이를 해결하기 위해 다른 통신 메커니즘의 사용을 고려한 대칭키 기반 인증 프로토콜을 제안한다.

• 제어로봇시스템학회지
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• 제18권2호
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• pp.21-29
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• 2012

최근 자동차 연구개발에 있어 내연기관을 대체하는 친환경 자동차기술과 더불어 무인자동차, 자율주행기술이 많은 부분에서 시도되고 실현되어가고 있다. 지능형 자동차라는 개념에서 적용되었던 운전자안전보조시스템, 편의지원과 사고경감 시스템 등이 하나로 통합되어 무인자동차 기술로 발전하고 있다. 또 차량에 고가의 센서를 장착하여 주변환경이나 운전자를 모니터링하는 방식에서 IT 융합기술을 이용한 네트워크기술 (V2I, V2V, V2N & V2X)을 접목시키는 방안을 통하여 개개의 차량은 물론 교통체계의 전체적인 변화를 추구하고 있다. 이러한 첨단차량기술은 새로운 교통문화(차량공유시스템, 군집주행)의 개발과 또다른 교통체계의 연구로 확장되어가고 있다.

• 공업화학
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• 제5권2호
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• pp.189-198
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• 1994

초고진공하에서 열탈착 실험에 의하여 오산화바나듐 촉매상에서 일산화탄소와 메탄올의 홉착특성을 연구하였다. 일산화탄소는 오산화바나듐 촉매표면의 격자산소 결함을 갖는 바나듐이온이나 바나듐이온에 결합된 이중결합성 산소에 흡착하였다. 격자산소 결함을 갖는 바나듐이온에 흡착한 일산화탄소는 380K에서 탈착되었으며, 바나듐이온에 결합된 이중결합성 산소에 흡착한 일산화탄소는 격자산소와 결합하여 탄산기의 형태를 형성한 후 이산화탄소로 탈착되면서 촉매 표면을 환원시켰다. 선흡착되거나 후흡착되는 산소에 의하여, 탄산기의 형태로 흡착하는 일산화탄소의 흡착량은 증가하였다. 오산화바나듐 촉매상에서 메탄올을 흡착시킨 후 메탄올, 포름알데히드, 일산화탄소, 수소 등의 열탈착실험에 의하여 메탄올의 흡착특성을 연구하였다. 메탄올은 298 K에서 오산화바나듐 촉매상에 methoxy와 hydroxyl기를 형성하면서 분해흡착하였다.

• ETRI Journal
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• 제11권2호
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• pp.109-119
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• 1989

Based on the 2-dimensional charge-control simulation[4], a purely analytical model for MODFET's is proposed. In this model, proper treatment of the diffusion effect in the 2-DEG transport due to the gradual channel opening along the 2-DEG channel was made to explain the enhanced mobility and increased thershold voltage. The channel thickness and gate capacitance are experssed as functions of gate vlotage including subthreshold characteristics of the MODFET's analytically. By introducing the finite channel opening and an effective channel-length modulation, the slope of the saturation region of the I-V curves was modeled. The smooth transition of the I-V curves from linear-to-saturation region of the I-V curves was possible using the continuous Troffimenkoff-type of field-dependent mobility. Furthermore, a correction factor f was introduced to account for the finite transtition section forming between the GCA and the saturated section. This factor removes the large discrepanicies in the saturation region fo the I-V curves presicted by existing 1-dimensional models. The fitting parameters chosen in our model were found to be predictable and vary over relatively small range of values.

• Kyungpook Mathematical Journal
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• 제45권1호
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• pp.67-71
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• 2005

We call K a (1, 1)-knot in M if M is a union of two solid tori $V_1\;and\;V_2$ glued along their boundary tori ${\partial}V_1\;and\;{\partial}V_2$ and if K intersects each solid torus $V_i$ in a trivial arc $t_i$ for i = 1 and 2. Note that every (1, 1)-knot is a tunnel number one knot. In this article, we determine when a tunnel number one knot is a (1, 1)-knot. In other words, we show that any tunnel number one knot with bridge number 3 is a (1, 1)-knot.

• E2M - 전기 전자와 첨단 소재
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• 제8권2호
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• pp.176-183
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• 1995

The present work is concerned with the switching conduction characteristics of PI LB films in metal insulator metal sandwiches. By applying various DC voltage bias to MIM junctions, conduction characteristics of junctions can be changed between the high-voltage low-current(off) condition, the low-voltage high-current (on) condition and the medium(mid) condition. Switching conduction characteristics can be also observed in MIM junctions employing some aromatic compounds as insulators. Switching conduction characteristics is assumed to be owing to the existence of aromatic rings, space charge in films, impurities on metal-insulator interface, and difference in work functions of base and top electrodes metal. To study the conduction process of on, off, and mid conductions, we measured I-V, d$^{2}$V/d I$^{2}$-V characteristics of junctions with several different top electrodes under various temperatures. Small conductance changes of junctions can be measured by observing the second derivative, d$^{2}$V/dI$^{2}$, of I-V curve. A dynamical technique is used to get the second derivatives. That is, a finite modulation of the current is applied to the junctions and the second harmonic of the voltage is detected.