• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.112-112
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• 2009

Temperature dependence of the ferroelectric properties of poly(vinylidefluoride-trifluoroethylene) copolymer thin films are studied with various insulators such as $SrTa_2O_6$ and $La_2O_3$. Thin films of poly(vinylidene fluoridetrifluoroethylene) 75/25 copolymer were prepared by chemical solution deposition on p-Si substrate. Capacitance-voltage (C-V) and current density (J-V) behavior of the Au/P(VDF-TrFE)/Insulator/p-Si structures were studied at ($150-200\;^{\circ}C$) and dielectric constant of the each insulators were measured to be about 15 at $850\;^{\circ}C$ for 10 minutes. Memory window width at 5 V bias the MFIS(metal-ferroelectric-insulator-semiconductor) structure with as deposited films was about 0.5 V at high temperature ($200\;^{\circ}C$). And the memory window width increased as voltage increased from 1 V to 5 V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.245-245
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• 2012

차세대 디스플레이로 각광받고 있는 AMOLED에 대한 관심이 높아짐에 따라 구동 소자의 연구가 활발히 이루어지고 있다. 산화물 반도체 박막 트랜지스터는 비정질 실리콘 박막 트랜지스터에 비해 100 $cm^2$/Vs 이하의 높은 이동도와 우수한 전기적 특성으로 AMOLED 구동 소자로서 학계에서 입증되어왔고, 현재 여러 기업에서 산화물 반도체를 이용한 박막 트랜지스터 제작 연구가 활발히 이루어지고 있다. 본 연구는 열처리 조건을 가변하여 제작한 산화물 반도체 박막 트랜지스터의 전기적 특성 분석을 목적으로 한다. 실리콘 기판에 oxidation 공정을 이용하여 SiO2 100 nm, DC스퍼터링을 이용하여 ITZO (Indium-Tin-Zinc Oxide) 산화물 반도체 박막 50 nm, 증착된 산화물 반도체 박막의 열처리 후, evaporation을 이용하여 source/drain 전극 Ag 150 nm 증착하여 박막 트랜지스터를 제작하였다. 12 sccm의 산소유량, 1시간의 열처리 시간에서 열처리 온도 $400^{\circ}C$, $200^{\circ}C$의 샘플은 각각 이동도 $29.52cm^2/V{\cdot}s$, $16.15cm^2/V{\cdot}s$, 문턱전압 2.61 V, 6.14 V, $S{\cdot}S$ 0.37 V/decade, 0.85 V/decade, on-off ratio 5.21 E+07, 1.10 E+07이었다. 30 sccm의 산소유량, 열처리 온도 $200^{\circ}C$에서 열처리 시간 1시간, 1시간 30분 샘플은 각각 이동도 $12.27cm^2/V{\cdot}s$, $10.15cm^2/V{\cdot}s$, 문턱전압 8.07 V, 4.21 V, $S{\cdot}S$ 0.89 V/decade, 0.71 V/decade, on-off ratio 4.31 E+06, 1.05 E+07이었다. 산화물 반도체의 열처리 효과 분석을 통하여 높은 열처리 온도, 적은 산소의 유량, 열처리 시간이 길수록 이동도, 문턱전압, $S{\cdot}S$의 산화물 박막 트랜지스터 소자의 전기적 특성이 개선되었다.

• 한국전기전자재료학회논문지
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• 제14권5호
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• pp.362-369
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• 2001

The electrical properties of varistors consisting of Zn-Pr-Co-Cr-Er oxides were investigated in the Er$_2$O$_3$content range of 0.0 to 2.0 mol%. the varistors without Er$_2$O$_3$ exhibited a relatively low nonlinearity, which was 14.24 in the nonlinear exponent and 21.47 $\mu$A in the leakage current. However, the varistors with Er$_2$O$_3$ sintered at 1335$^{\circ}C$ for 1h exhibited very high nonlinear exponent of 70, in particular, reaching a maximum value of 78.05 in 2.0 mol% Er$_2$O$_3$, and those sintered at 1335$^{\circ}C$ for 2h exhibited the nonlinear exponent close to 50, in particular, reaching a maximum value of52.76 in 0.5 mol% Er$_2$O$_3$. The others except for 0.5 mol% Er$_2$O$_3$-added varistors exhibited very high instability resulting in a thermal runaway within a short time, even a weak DC stress. Increasing soaking time decreased the nonlinearity, but increased the stability. The varistors containing 0.5mol% Er$_2$O$_3$ sintered for 2h exhibited excellent stability, in which the variation rate of the varistor voltage and nonlinear exponent was -1.70% and -7.15%, respectively, under more severe DC stress such as (0.80 V$_{1mA}$/9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$/115$^{\circ}C$/12h)+(0.90 V$_{1mA}$/12$0^{\circ}C$/12h)+(0.95 V$_{1mA}$/1$25^{\circ}C$/12h)+(0.95 V$_{1mA}$/15$0^{\circ}C$/12h).TEX>/12h).

• 한국세라믹학회지
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• 제29권8호
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• pp.587-592
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• 1992

Sheets of SiC-SiC whisker maxed matrix were prepared from the mixed slurry of SiC whisker and SiC matrix by the rolling method. With the increase of SiC whisker, the pore size, the porosity and the phosphoric acid absorbency of the matrix were increased, while the bubble pressure was decreased. The activation energy for the transfer of H+ ion was decreased with the increase of mixing ratio of SiC whisker to the SiC matrix from the measurement of hydrogen ion conductivity. The activation energy was evaluated as 0.25 eV when the mixing ratio of SiC whisker to the SiC matrix was 1 : 2 and the activation energy was 0.16 eV for the 2 : 1 matrix. It means that SiC whisker matrix contributes to attain a better microstructure for the diffusion of hydrogen ion. From the measurement of single cell performance of matrix with various mixing ratio, it is concluded that if SiC-SiC whisker maxed matrix has a sufficient bubble pressure to prevent the crossover of H2 gas, the current density of a fuel cell is increased with the increase of acid absorbency of the matrix. Current density was improved from 140 mA/$\textrm{cm}^2$ for 0.25 mm thickness of matrix to 170 mA/$\textrm{cm}^2$ for the 0.20 mm one at 700 mV.

• Journal of applied mathematics & informatics
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• 제35권1_2호
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• pp.121-130
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• 2017

This study is concerned with the existence of positive solution for the following nonlinear elliptic system $$\{-M_1(\int_{\Omega}{\mid}x{\mid}^{-ap}{\mid}{\nabla}u{\mid}^pdx)div({\mid}x{\mid}^{-ap}{\mid}{\nabla}u{\mid}^{p-2}{\nabla}u)\\{\hfill{120}}={\mid}x{\mid}^{-(a+1)p+c_1}\({\alpha}_1A_1(x)f(v)+{\beta}_1B_1(x)h(u)\),\;x{\in}{\Omega},\\-M_2(\int_{\Omega}{\mid}x{\mid}^{-bq}{\mid}{\nabla}v{\mid}^qdx)div({\mid}x{\mid}^{-bq}{\mid}{\nabla}v{\mid}^{q-2}{\nabla}v)\\{\hfill{120}}={\mid}x{\mid}^{-(b+1)q+c_2}\({\alpha}_2A_2(x)g(u)+{\beta}_2B_2(x)k(v)\),\;x{\in}{\Omega},\\{u=v=0,\;x{\in}{\partial}{\Omega},$$ where ${\Omega}$ is a bounded smooth domain of ${\mathbb{R}}^N$ with $0{\in}{\Omega}$, 1 < p, q < N, $0{\leq}a$ < $\frac{N-p}{p}$, $0{\leq}b$ < $\frac{N-q}{q}$ and ${\alpha}_i,{\beta}_i,c_i$ are positive parameters. Here $M_i,A_i,B_i,f,g,h,k$ are continuous functions and we discuss the existence of positive solution when they satisfy certain additional conditions. Our approach is based on the sub and super solutions method.

• Journal of applied mathematics & informatics
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• 제24권1_2호
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• pp.261-271
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• 2007

The symbol C($m_1^{n_1}m_2^{n_2}{\cdots}m_s^{n_s}$) denotes a 2-regular graph consisting of $n_i$ cycles of length $m_i,\;i=1,\;2,\;{\cdots},\;s$. In this paper, we give some construction methods of cyclic($K_v$, G)-designs, and prove that there exists a cyclic($K_v$, G)-design when $G=C((4m_1)^{n_1}(4m_2)^{n_2}{\cdots}(4m_s)^{n_s}\;and\;v{\equiv}1(mod\;2|G|)$.

• Advanced Composite Materials
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• 제18권4호
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• pp.339-350
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• 2009

Al-Fe-V-Si alloys reinforced with SiC particles were prepared by multi-layer spray deposition technique. Both microstructures and mechanical properties including hardness and tensile properties development during hot exposure process of Al-8.5Fe-1.3V-1.7Si, Al-8.5Fe-1.3V-1.7Si/15 vol% $SiC_P$ and Al-10.0Fe-1.3V-2Si/15 vol% $SiC_P$ were investigated. The experimental results showed that an amorphous interface of about 3 nm in thickness formed between SiC particles and the matrix. SiC particles injected silicon into the matrix; thus an elevated silicon concentration was found around $\alpha-Al_{12}(Fe,\;V)_3Si$ dispersoids, which subsequently inhibited the coarsening and decomposition of $\alpha-Al_{12}(Fe,\;V)_3Si$ dispersoids and enhanced the thermostability of the alloy matrix. Moreover, the thermostability of microstructure and mechanical properties of Al-10.0Fe-1.3V-2Si/15 vol% $SiC_P$ are of higher quality than those of Al-8.5Fe-1.3V-1.7Si/15 vol% $SiC_P$.

• 마이크로전자및패키징학회지
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• 제10권2호
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• pp.7-12
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• 2003

졸-겔(Sol-Gel)법으로 $SiO_2/Si$ 기판 위에 $Bi_{3.3}La_{0.7}O_{12}$(BLT) 강유전체 박막을 스핀코팅하여 Metal-Ferroelectric-Insulator-Silicon 구조의 캐패시터 소자를 제작하였다. 열처리하지 않은 BLT 박막시료를 $650^{\circ}C$와 $700^{\circ}C$의 온도에서 열처리함으로서 임의 배향을 가지는 퍼롭스카이트 결정구조를 나타내었다. 열처리 온도를 $650^{\circ}C$에서 $700^{\circ}C$로 증가시킴에 따라서 (117) 주피크의 full width at half maximum(FWHM)값이 약 $0.65^{\circ}$에서 $0.53^{\circ}$로 감소하여 결정성이 개선되었으며 결정립 크기와 $R_rms$ 값이 증가하면서 박막표면이 거칠어지는 경향을 보여주었다. $700^{\circ}C$에서 열처리한 BLT 박막시료에 대해 인가 전압에 따른 정전용량(C-V)값을 측정한 결과 5V의 인가전압에서 메모리 원도우 값이 약 0.7V를 보여주었으며, 3V의 인가전압에서 누설전류 값이 약 $3.1{\times}10^{-8}A/cm^2$을 나타내었다.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.662-666
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• 2006

Microstructure and electrical properties of ZnO varistors as a function of sintering temperature and times were investigated. Sintering temperature and times greatly affected electrical properties and Bi-rich liquid phase of the microstructure. The varistor which were sintered at $1125^{\circ}C\sim1150^{\circ}C$, for 2 hr exhibited the varistor voltage$(V_c)$, nonlinear coefficient $(V_{10mA}/V_{1mA})$, leakage current$(I_L)$ dielectric constant and dissipation factor as $225\sim250V/mm,\;0.89\sim0.92,\;0.8\sim1.1{\mu}A,\;720\sim740\;and\;1.8\sim2.0%$, respectively.

• 한국미생물·생명공학회지
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• 제24권3호
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• pp.380-383
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• 1996

Adenosine deaminase inhibitor was extracted from culture broth of Streptomyces sp. strain V-8 with ethylacetate. The ethylacetate extract showed the characteristic UV absorption spectrum of actinomycins at 440-450 nm. The ethylacetate extract was compared with respect to inhibitory behavior against adenosine deaminase from calf intestinal mucosa with actinomycin D, -C complex and actinomycin V. The Ki values for actnomycin D, -C complex, and actinomycin V against adenosine deaminase were determined to be 9.9 $\times$ 10$^{-6}$ M, 9.6 $\times$ 10$^{-6}$ M and 9.3 $\times$ 10$^{-6}$ M, respectively. The Ki value for the ethylacetate extract of culture broth against adenosine deaminase was determined to be 5.7 $\times$ 10$^{-6}$ M. The kinetic parameters of actinomycin D, -C complex, -V and ethylacetate extract of culture broth for adenosine deaminase were as follows:I$_{50}$ = 1.5 $\times$ 10$^{-5}$ M (actinomycin D), 2.7 $\times$ 10$^{-5}$ M (actinomycin C complex), 3.5 $\times$ 10$^{-5}$ M (actinomycin V), 8.9 $\times$ 10$^{-6}$ M (ethylacetate extract of culture broth). The adenosine deaminase was inhibited noncompetitively by ethylacetate extract of culture broth as well as by actinomycin D, -C complex and actinomycin V.