• Title/Summary/Keyword: V.O.F.

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삼천포 화력발전소 3, 4호기 건설 345kV O.F. 케이블 지중 송전선로 공사

  • 최창수;김태욱
    • JOURNAL OF ELECTRICAL WORLD
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    • no.1 s.193
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    • pp.36-44
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    • 1993
  • 국내에서도 345kV O.F. 지중케이블의 실용화의 문이 열렸다. 한국전력공사에서 건설하는 삼천포 화력 3, 4호기 증설공사에는 국내 최초로 최고전압계통인 345kV 1×2000㎟ 및 1×1200㎟ 알루미늄 피 Oil-Filed 케이블을 사용하였으며, 대한 전선(주)에서 이를 설계, 제작납품 및 시공을 완료(Unit /sup #/3, /sup #/4 및 Tie Line)하였다. 본고에서는 케이블 및 부속재의 설계부터 현장 시공에 이르기까지를 소개한다.

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Effect of Oxygen Partial Pressure on the Structural, Optical and Electrical Properties of Sputter-deposited Vanadium Oxide Thin Films (스퍼터링으로 증착된 바나듐 산화막의 구조적, 광학적, 전기적 특성에 미치는 산소 분압의 효과)

  • 최복길;최창규;권광호;김성진;이규대
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.12
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    • pp.1008-1015
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    • 2001
  • Thin films of vanadium oxide(VO$\_$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition, bonding, optical and electrical properties of films sputter-deposited under different oxygen gas pressures are characterized through XPS, AES, RBS, FTIR, optical absorption and electrical conductivity measurements. V$_2$O$\_$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\_$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. With increasing oxygen gas pressure indirect and direct optical band gaps are increased, but thermal activation energies are decreased.

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Structure evolution of Pt doped amorphous $V_{2}O_{5}$ cathode film for thin film battery (Pt이 도핑된 박막 전지용 비정질 산화바나듐 박막의 구조적 변화)

  • 김한기;전은정;옥영우;성태연;조원일;윤영수
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.889-892
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    • 2000
  • We have investigated the Pt doping effect on structural and electrochemical properties of amorphous vanadium oxide film, grown by radio frequency magnetron sputtering. Room temperature charge-discharge measurements based on a half-cell with a constant current clearly indicated that the Pt doping could improve the cyclibility of V$_2$O$_{5}$ cathode film. Using glancing angle x-ray diffraction (GXRD) and high resolution transmission electron microscopy (HRTEM) analysis, we found that the Pt doping with l0W r.f. power induce more random amorphous structure than undoped V$_2$O$_{5}$ film. As the r.f. power of Pt increases, large amount of Pt incorporates into amorphous V$_2$O$_{5}$ and makes PtOx microcrystalline phase in amorphous matrix. This result suggests that the semicondcuting PtOx microcrystalline phase in amorphous matrix lead to a drastically faded cyclibility of 50W Pt doped V$_2$O$_{5}$ cathode film. Possible explanations are given to describe the Pt doping effect on cyclibility of vanadium oxide cathode film.de film.

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Improved Cycle Life and Storage Performance in High-Voltage Operated Li2MnO3-LiMO2(M=Ni, Co, Mn)/Graphite Cell System by Fluorine Compounds as Main Electrolyte Solvent (고전압 구동 Li2MnO3-LiMO2(M=Ni, Co, Mn)/graphite 시스템에서의 전지 수명 및 고온 방치 특성 향상에 효과적인 플루오로 화합물계 전해액에 대한 연구)

  • Yu, Jung-Yi;Shin, Woocheol;Lee, Byong-Gon
    • Journal of the Korean Electrochemical Society
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    • v.16 no.3
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    • pp.162-168
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    • 2013
  • $Li_2MnO_3-LiMO_2$(M=Ni, Co, Mn) nano-composite is a promising cathode material for xEV application due to its high theoretic capacity. However high voltage operating system of $Li_2MnO_3-LiMO_2$(M=Ni, Co, Mn) has worked as a hurdle in its application because of the inherent demerits, such as cycle life degradation and gas evolution. In order to enhance cell performance of $Li_2MnO_3-LiMO_2$(M=Ni, Co, Mn)/graphite cell, we examined electrolyte mainly composed of FEC, fluroalkyl ether and $LiPF_6$ (F-based EL). F-based EL showed much better discharging retention ratio than 1.3 M $LiPF_6$ EC/EMC/DMC (3/4/3, v/v/v) (STD). Furthermore gas evolution, especially CO and $CO_2$ during $60^{\circ}C$ storage for 30 days was dramatically reduced owing to thermal stable SEI formation effect of F-based EL.

Changes of Chemical Composition in Hybrid Seed during Germination and Seedling Growth of Hybrid Rice (1대잡종 벼의 발아시 종실내 성분함량의 변화와 발아율 및 초기생육)

  • 이덕배;권태오;박석홍
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.39 no.5
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    • pp.412-419
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    • 1994
  • This study was carried out to investigate changes of chemical composition in seed, germination percentage, and seedling growth of two F$_1$ hybrid rices(V20A/Cheongcheongbyeo, IR62829A/Cheongcheongbyeo) during germination compared with their parents (V20B, IR62829B and Cheongcheongbyeo) and check variety(Samgangbyeo). F$_1$ hybrid rice showed higher content of free amino acid, inorganic elements, ($P_2O_5$, $K_2$O, MgO) and total sugar, and higher a-amylase activity in brown rice than those of their parents and check variety during germination. Therefore$F_1$hybrid rices showed hybrid vigor in germination percentage at 33 hour and 48 hour after sowing. $F_1$ Hybrid rices also showed /heterosis in seedling growth was different between V20A/Cheongcheongbyeo and IR 62829A/Cheongcheongbyeo. There were positive significant correlation between a-amylase activity and germination percentage, and seedling growth.

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Supercapacitive Properties of RuO2 and Ru-Co Mixed Oxide Deposited on Single-Walled Carbon Nanotube (단일벽 탄소나노튜브 상에 석출된 산화루테늄과 루테늄-코발트 혼합산화물의 수퍼커패시터 특성)

  • Ko, Jang Myoun;Kim, Kwang Man
    • Korean Chemical Engineering Research
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    • v.47 no.1
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    • pp.11-16
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    • 2009
  • Composite electrodes for redox supercapacitor were prepared potentiodynamically by the deposition of $RuO_2$ and the co-deposition of Ru-Co mixed oxide on the surface of single-walled carbon nanotube. Electrode of Ru-Co mixed oxide, in which Ru(13.13 wt%) and Co(2.89 wt%) were deposited on the carbon nanotube, exhibited a similar specific capacitance(${\sim}620\;F\;g^{-1}$) with $RuO_2$ electrode at a low potential scan rate($10\;mV\;s^{-1}$), but showed a superior one ($570\;F\;g^{-1}$) at a high scan rate($500\;mV\;s^{-1}$) than that of $RuO_2$($475\;F\;g^{-1}$). Such increase in the specific capacitance at high scan rate by the co-deposition of Ru and Co species was due to the structural support of Co species to provide the electronic conduction through Ru species.

Studies on LiF-${Li_2}O-{B_2}{O_3}-{P_2}{O_5}$ based Glassy Solid Electrolytes (LiF-${Li_2}O-{B_2}{O_3}-{P_2}{O_5}$계 유리고체전해질에 관한 연구)

  • Park, Gang-Seok;Gang, Eun-Tae;Kim, Gi-Won;Han, Sang-Mok
    • Korean Journal of Materials Research
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    • v.3 no.6
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    • pp.614-623
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    • 1993
  • Electrical characteristics of LiF-$Li_{2}O-B_{2}O_{3}-P_{2}O_5$ glasses with fixed $Li_2O$ content have been investigated by using AC impedance spectroscopy. Part of the total lithium ions present in these glasses contributes to conduction, and the changes in electrical conductivity with composition was inconsistent with the weak electrolyte model. The power law could not be used to determine the hopping ion concentration in these glasses. Both mobile carrier density and mobility have been modified as Li were added in the form of LiF. The formation of $(B-O-P)^-,di^-$, and metaborate group gave additional available sites for Li+ diffusion causing the enhancement of conductivity. The observed maximum conductivity was $2.43 \times 10^{-4}$S/cm at $150^{\circ}C$ at the composition containing 8mol% LiF. The decomposion potential amounted to 5.94V. The Li/glass electrolyte/$TiS_2$ solid-state cell showed open circuit voltage of 3.14V and energy density of 22 Wh/Kg at $150^{\circ}C$.

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Dielectric properties of $BiNbO_4$ dielectric ceramics for multilayer microwave device (적층형 마이크로파 소자용 $BiNbO_4$ 유전체 세라믹스의 유전특성)

  • 박정흠;장낙원;윤광희;최형욱;박창엽
    • Electrical & Electronic Materials
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    • v.9 no.9
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    • pp.900-905
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    • 1996
  • We have investigated dielectric properties of low fired ceramics BiNbO$_{4}$ containing 0.05[wt%] V$_{2}$O$_{5}$ and x[wt%l Cr$_{2}$O$_{3}$ (x=0, 0.2, 0.4, 0.8, 1.2). By substituting Cr for Bi, dielectric constant .epsilon.$_{r}$ and quality factor Q.f increased and temperature coefficient of resonant frecquency .tau.$_{f}$ changed to positive value. In the composition of BiNbO$_{4}$+0.05 [Wt%] V$_{2}$O$_{5}$+0.8[wt%]Cr$_{2}$O$_{3}$ sintered at 960[.deg. C], we could obtain microwave dielectric properties of .epsilon.$_{r}$=49, Q.f.simeq.3000[GHz](at 4.8[GHz]), .tau.$_{f}$.simeq.0[ppm/.deg. C]. As the above ceramics can be sintered near 960[.deg. C], it is applicable to multilayer microwave device with Ag conductor.tor.tor.tor.

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EXISTENCE AND NON-EXISTENCE FOR SCHRÖDINGER EQUATIONS INVOLVING CRITICAL SOBOLEV EXPONENTS

  • Zou, Henghui
    • Journal of the Korean Mathematical Society
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    • v.47 no.3
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    • pp.547-572
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    • 2010
  • We study existence of positive solutions of the classical nonlinear Schr$\ddot{o}$dinger equation $-{\Delta}u\;+\;V(x)u\;-\;f(x,\;u)\;-\;H(x)u^{2*-1}\;=\;0$, u > 0 in $\mathbb{R}^n$ $u\;{\rightarrow}\;0\;as\;|x|\;{\rightarrow}\;{\infty}$. In fact, we consider the following more general quasi-linear Schr$\ddot{o}$odinger equation $-div(|{\nabla}u|^{m-2}{\nabla}u)\;+\;V(x)u^{m-1}$ $-f(x,\;u)\;-\;H(x)u^{m^*-1}\;=\;0$, u > 0 in $\mathbb{R}^n$ $u\;{\rightarrow}\;0\;as\;|x|\;{\rightarrow}\;{\infty}$, where m $\in$ (1, n) is a positive number and $m^*\;:=\;\frac{mn}{n-m}\;>\;0$, is the corresponding critical Sobolev embedding number in $\mathbb{R}^n$. Under appropriate conditions on the functions V(x), f(x, u) and H(x), existence and non-existence results of positive solutions have been established.

Structure of $\alpha$,$\beta$-Diphenylsuccinic Acid ($\alpha$,$\beta$-Diphenylsuccinic Acid의 구조)

  • 서일환;윤민중
    • Korean Journal of Crystallography
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    • v.5 no.2
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    • pp.108-112
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    • 1994
  • C19H20O5, Mr=314.337, triclinic,PI, a=10.291(2)A, b=11.218(3)A, c=3.059(1)A, α=74.54(2)°, β=1148.84(1)°, r=109.84(2)°, V=883.283(2)A3, λ(Mo Kα)=0.71069A, μ=0.47 mm-1, F(000)=324, 296K, Z=2, Dx=1.18Mgm-3. Final R=0.0580 for 1637[F>3σ(F)]unique refledtions. α,β-diphenylsuccinic acid, C16H14O4, are connedted with the solvent actone by hydrogen bond O(4)-H˙˙˙O(5), forming a dimer related by related by centrosymmentry thorough intermolecualr carboxylic hydrogen bond O(1)-H˙˙˙O(2)(-x,-y,-z). The nearest distance 3.288A[O(2)˙˙˙O(2)(-x,-y,-z)] between the dimers shows that the packing of the dimer is govermed by van der Waals'force.

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