• Journal of the Korean Chemical Society
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• v.31 no.2
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• pp.178-183
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• 1987

The kinetics of the reaction of $[Mo_3O_4(H_2O)_9]^{4+}$ with $VO_2^+$have been studied at $25^{\circ}C$ by spectrophotometric method. With$VO_2^+$ in excess, the $[Mo_3O_4(H_2O)_9]^{4+}$ reaction can be expressed as $Mo^{IV}_3+6V^V{\rightleftarrows}3Mo^{IV}+6V^IV}$. Observed rate constants for the reaction are dependent on [$H^+$] and [$VO_2^+$]. Mechanism for the redox of $[Mo_3O_4(H_2O)_9]^{4+}$and $VO_2^+$ is proposed and discussed.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.333-340
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• 1996

The properties of TiN as a barrier against Cu diffusion ere studied by sheet resistance measurement, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and capacitance-voltage(C-V) measurement. The sensitivities of the various methods were compared. Specimens with Cu/TiN/Ti/SiO2/Si structure were prepared by various deposition techniques and annealed at various temperatures ranging from $500^{\circ}C$ to $800^{\circ}C$ in 10%H2/90%Ar ambient for hours. As the effectiveness of the barrier property of TiN against Cu diffusion was vanished, the irregular-shaped sports were observed and outdiffused Si were detected on the surface of the Cu thin film. The C-V characteristics of the MOS capacitors varied drastically with annealing temperatures. In C-V measurement, the inversion capacitance decreased at annealing temperature range from $500^{\circ}C$ to $700^{\circ}C$ and increased remarkably at $800^{\circ}C$. These variations may be due to the Cu diffusion through TiN into $SiO_2$ and Si.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.3
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• pp.106-110
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• 2014

The passivation property of $Al_2O_3$ thin film formed using atomic layer deposition (ALD) for the application of crystalline Si solar cells was investigated using microwave photoconductance decay (${\mu}$-PCD). After post-annealing at $400^{\circ}C$ for 5 min, $Al_2O_3$ thin film exhibited the structural stability having amorphous nature without the interfacial reaction between $Al_2O_3$ and Si. The post-annealing at $400^{\circ}C$ for 5 min led to an increase in the relative effective lifetime of $Al_2O_3$ thin film. This could be associated with the field effective passivation combined with surface passivation of textured Si. The capacitance-voltage (C-V) characteristics of the metal-oxide-semiconductor (MOS) with $Al_2O_3$ thin film post-annealed at $400^{\circ}C$ for 5 min was carried out to evaluate the negative fixed charge of $Al_2O_3$ thin film. From the relationship between flatband voltage ($V_{FB}$) and equivalent oxide thickness (EOT), which were extracted from C-V characteristics, the negative fixed charge of $Al_2O_3$ thin film was calculated to be $2.5{\times}10^{12}cm^{-2}$, of which value was applicable to the passivation layer of n-type crystalline Si solar cells.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.44-55
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• 1996

Emerald (3BeO{\cdot}Al$_{2}$O_{3}{\cdot}6SiO_2 : Cr^{3+}$) single crystals were grown by flux method of $Li_2O-MoO_3 - V_2O_5$ system. The composition of starting materials were 1, 3, 5 mole ratio of $MoO_3 - V_2O_5/$Li_2O$, 20 - 15% of emerald content to flux composition and 1% of $Cr_2O_3$ colordopant to emerald composition. After mixing those were melted at $1100^{\circ}C$ in Pt crucible of electric furnace. Single crystal growth was cooled down slowly rate of $3^{\circ}C$/hr from $1100^{\circ}C$ to $650^{\circ}C$, for the cooling period it was controlled and prevented the nucleation of microcrystallite from variation of each thermal fluctuation range. Specially it has been obtained plenty of large emerald single crystal when thermal fluctuation was treated for cooling period at $1050 ~ 950^{\circ}C$, in 3 mole ratio of $V_2O_5 - MoO_3/Li_2O$ flux. Emerald single crystal growing effect and $Cr_{+3}$ ion of substitutional solid solution effect for $Al_{+3}$ ion was good than mole ratio of 5. Emerald single crystals were c (0001) hexagonal rystal face of preferencial direction and m (1010) post side. Emerald was hexagonal columnar greenish transparent and 2.65 ~ 2.66 of specific gravity.

• Korean Journal of Crystallography
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• v.5 no.1
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• pp.1-6
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• 1994

Two possible space groups of the comfound, VP6N3018C24H:60, are: P 1, a=14.022(1), b=12.644(2), c= 12.640(1)A, a=8038(1), B=102.12(1), r=102.16(1), V=2124.1A3, Z=2, μ=0.47cm-1, d=1.46g/cm3, R=0.083 for 3350 independent reflections with Fo>4o IFI, and C2/c, a=19.32(2), b=16.32(2), c=14.02(1)A, B=105.98(5), β=105.98(5), V=4248.2A3, Z=4 R=0.083 for 1590 independent reflections with Fo>4c IFoI . In the space group P T, there are two monlecules in a unit cell. Vanadium atoms in the two monlecules occupy the two different special positions such that the complete monlecules are accomplished by the two independent center of symmetry. Therefore two different half molecules of bis(trimetaphosphate)vanadate and three molecules of tetraethylammonium are the asymmetric unit in a unit cell. In the space group C2/c, however, the vanadium atom is located at a special position with centrosymmetry, and a two-fold symmetry axis passes through C2/c, N2 and C25 atoms. Therefore the asymmrtic unit in a unit cell consists of a half molecule of bis(trimetaphosphate)vanadate and one and a half molecules of tetraethylammonium. All the molecular conformations in both space groups are very similar: six oxygen atoms coordinated to a vanadium atom in the bi s(trimetaphosphate)vanadate molecule form an octahedron and the four carbon atoms bonded to a nitrogen atom in the tetraethylammonium molecule are disordered so that the eight carbon atoms around nitrogen atom exhibit an irregular dodecahedral form.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.179-184
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• 2000

The I-V characteristics of $ZnO-Pr_6O_{11}-CoO-Dy_2O_3$ based varistors were investigated in the $Pr_6O_{11}/CoO$ composition ratio range of 0.5/0.5 to 1.0/1.0 and sintering temperature range of 1300 to $1350^{\circ}C$ as the basic study to develop the advanced $Pr_6O_{11}$-based ZnO varistors. All varistors except for $Pr_6O_{11}$/CoO = 0.5/1.0 exhibited the best I-V characteristics at $1350^{\circ}C$. However, the varistors with $Pr_6O_{11}$/CoO= 0.5/1.0 exhibited the best I-V characteristics at $1350^{\circ}C$. The varistors with $Pr_6O_{11}$/CoO= 0.5/1.0 of all varistors exhibited the best I-V characteristics, which the nonlinear exponent is 36.9 and the leakage current is 7.6 ${\mu}A$ Therefore, it was estimated that ZnO-$Pr_6O_{11}-CoO-Dy_2O_3$ ceramics with $Pr_6O_{11}$/CoO= 0.5/1.0 will be usefully used as varistor materials in the future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.415-418
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• 2001

The I-V characteristics and its stability of ZPCCL-based ceramic varistors doped with La$_2$O$_3$in the range of 0.0~4.0 mol% were investigated. The density of ceramics was increased in the range of 4.7~5.8 g/cm$^3$ with increasing La$_2$O$_3$content. As La$_2$O$_3$content is increased, the varistor voltage was decreased in the range of 503.49-9.42 V/mm up to 2.0 mol%, whereas increasing La$_2$O$_3$content further caused it to increase. The ZPCCL-based varistors were characterized by nonlinearity, in which the nonlinear exponent is in the range of 3.05~82.43 and leakage current is in the range of 0.24-100.22 $\mu$A. Among ZPCCL-based varistors, 0.5 mol% added-varistors exhibited an excellent nonlinearity, in which the nonlinear exponent is 82.43 and the leakage current is 0.24 $\mu$A. Furthermore, they exhibited a high stability, in which the variation rate of the varistor voltage and the nonlinear exponent was -1.11% and -6.72%, respectively, under DC stress, such as (0.80 V$_{1mA}$9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$//12h) +(0.90 V$_{1mA}$12$0^{\circ}C$//12h)+(0.95 V$_{1mA}$1$25^{\circ}C$//12h)+(0.95 V$_{1mA}$15$0^{\circ}C$//12h). Consequently, it was estimated that ZPCCL-based ceramics will be applied to development of Pr$_{6}$O$_{11}$ based ZnO varistors having a high performance.e.rformance.e.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.7
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• pp.16-19
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• 2019

A thinner film has superior electrical properties and a better amorphous structure. Amorphous structures can be effective in improving conductivity through a depletion effect. Research is needed on the Schottky contact, where potential barriers are formed, as a way to identify these characteristics. $SiO_2/SnO_2$ thin films were prepared to examine the amorphous structure and Schottky contact, $SiO_2$ thin films were prepared using Ar = 20 sccm. $SnO_2$ thin films were deposited using mixed gas with a flow rate of argon and oxygen at 20 sccm, and $SnO_2$ thin films were added by magnetron sputtering and treated at $100^{\circ}C$ and $150^{\circ}C$. To identify the conditions under which the amorphous structure was constructed, the XRD patterns were investigated and C-V and I-V measurements were taken to make Al electrodes and perform electrical analysis. The depletion layer was formed by the recombination of electrons and holes through the heat treatment process. $SiO_2/SnO_2$ thin films confirmed that the pores were well formed when heat treated at $100^{\circ}C$ and an electric current was applied over the micro area. An amorphous $SiO_2/SnO_2$ thin film with heat treatment at $100^{\circ}C$ showed no reflection at $33^{\circ}\;2{\theta}$ in the XRD pattern, and a reflection at $44^{\circ}2\;{\theta}$. The macroscopic view (-30 V

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1096-1099
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• 2004

The principal problems in development of dielectric paste materials for PDP(plasma display panel)are PbO free paste and low melting temperature. We prepared PbO free paste from glasses in the system BaO-ZnO-$B_2O_3$-$V_2O_5$. DTA, and XRD were used to characterize BaO-ZnO-$B_2O_3$-$V_2O_5$ glasses. In this present study, PbO free paste had thermal expansion of $74\times10^{-7}/^{\circ}C$, DTA softening point of $460^{\circ}C$, and firing condition of $520^{\circ}C$, 20min

• Journal of the Korean Chemical Society
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• v.46 no.1
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• pp.26-36
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• 2002

A solid-state reaction of $MoO_3$ with as-synthesized H-SAPO-34 generated paramagnetic Mo(V) species. The dehydration resulted in weak Mo(V) species, and subsequent activation resulted in the formation of Mo(V) species such as $Mo(V)_{5c}$ and $Mo(V)_{6c}$ that are characterized by ESR. The data of ESR and ESEM show the oxomolybdenum species, to be $(MoO_2)^+$ or $(MoO)^{3+}$. The $(MoO_2)^+$ species seems to be more probable. Since H-SAPO-34 has a low framework negative charge, $(MoO)^{3+}$ with a high positive charge can not be easily stabilized. A solution reaction between the solution of silico-molybdic acid and calcined H-SAPO-34 resulted in only $(MoO_2)^+$ species. A rhombic ESR signal is observed on adsorption of $D_2O$, $CD_3OH$, $CH_3Ch_2OD$ and $ND_3$. The Location and coordination structure of Mo(V) species has been determined by three-pulse electron spin-echo modulation data and their simulations. After the adsorption of methanol, ethylene, ammonia, and water for MoH-SAPO-34, three molecules, one molecule, one and one molecule, respectively, are directly coordinated to $(MoO_2)^+)$.