• Title/Summary/Keyword: V-sim

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A Simulation Study on the Structural Optimization of a 800 V 4H-SiC Power DMOSFET (800 V급 4H-SiC DMOSFET 전력 소자 구조 최적화 시뮬레이션)

  • Choi, Chang-Yong;Kang, Min-Seok;Bahng, Wook;Kim, Sang-Cheol;Kim, Nam-Kyun;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.8
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    • pp.637-640
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    • 2009
  • In this work, we demonstrate 800 V 4H-SiC power DMOSFETs with several structural alterations to obtain a low threshold voltage ($V_{TH}$) and a high figure of merit ($V_B\;^2/R_{SP,ON}$), To optimize the device performance, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. These parameters are optimized using 2D numerical simulation and the 4H-SiC DMOSFET structure results in a threshold voltage ($V_{TH}$) below $^{\sim}$3.8 V, and high figure of merit ($V_B\;^2/R_{SP,ON}$>$^{\sim}$200 $MW/cm^2$) for a power MOSFET in $V_B\;^{\sim}$800 V range.

Study on Folded TEM Horn Antennas for 70 kV Impulse (70 kV 임펄스용 접힌 TEM 혼 안테나에 관한 연구)

  • Lee, Jin-Seong;Byun, Joon-Ho;Ahn, Young-Joon;Lee, Byung-Je
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.6 no.3
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    • pp.95-100
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    • 2007
  • In this paper, a twice folded TEM horn antenna for 70 kV impulse high power system is proposed. The length reduction of 50 % is achieved by folding a conventional TEM horn antenna twice. The array elements are fed by the stripline power divider using the Chebyshev transformer. The power divider feeds four TEM horn antenna elements with an in-phased uniform power, and it covers a wide bandwidth ($150\;MHz\;{\sim}\;768\;MHz$, VSWR<2.0). Considering the air breakdown at peak 70 kV impulse, the proposed antenna maintains the 25 mm gaps between conducting plates. The dimension of the twice folded horn antenna is $1730\;{\times}\;1600\;{\times}\;300$ (mm3), and the operating frequency is from 152 MHz to 750 MHz under 10 dB return loss. The peak gains are measured from 6.77 dBi to 10.70 dBi at $400\;MHz\;{\sim}\;750\;MHz$.

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Consolidation Behavior of Soft Ground by Prefabricated Vertical Drains (페이퍼드레인 공법에 의한 연약지반의 압밀거동)

  • Lee, Dal Won;Kang, Yea Mook;Kim, Seong Wan;Chee, In Taeg
    • Korean Journal of Agricultural Science
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    • v.24 no.2
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    • pp.145-155
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    • 1997
  • The large scaled field test by prefabricated vertical drains was performed to evaluate the superiority of vertical discharge capacity for drain materials through compare and analyze the time-settlement behavior with drain spacing and the compression index and consolidation coefficient obtained by laboratory experiments and field monitoring system. 1. The relation of measurement settlement($S_m$) versus design settlement($S_t$) and measurement consolidation ratio($U_m$) versus design consolidation ratio($U_t$) were shown $S_m=(1.0{\sim}1.1)S_t$, $U_m=(1.13{\sim}1.17)U_t$ at 1.0m drain spacing and $S_m=(0.7{\sim}0.8)S_t$, $U_m=(0.92{\sim}0.99)U_t$ at l.5m drain spacing, respectively. 2. The relation of field compressing index($C_{cfield}$) and virgin compression index($V_{cclab.}$) was shown $C_{cfield}=(1.0{\sim}1.2)V_{cclab.}$, But it was nearly same value when considered the error with determination method of virgin compression index and prediction method of total settlement. 3. Field consolidation coefficient was larger than laboratory consolidation coefficient, and the consolidation coefficient ratio($C_h/C_v$) were $C_h=(2.4{\sim}3.0)C_v$. $C_h=(3.5{\sim}4.3)C_v$ at 1.0m and 1.5m drain spacing and increased with increasing of drain spacing. 4. The evaluation of vertical discharge capacity with drain spacing from the results of the consolidation coefficient ratio showed largely superior in case the Mebra drain and Amer drain than other drain materials at 1.0m and 1.5m drain spacing, while the values showed nearly same value in case same drain spacing.

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Effects of the Quantities of Substrate on the Yield of Oyster mushroom Pleurotus ostreatus (느타리버섯 재배에 있어서 배지량이 자실체 수량에 미치는 영향)

  • Yun, Young-Seok;Rew, Young-Hyun;Park, Sun-Do;Choi, Boo-Sull
    • The Korean Journal of Mycology
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    • v.24 no.2 s.77
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    • pp.89-92
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    • 1996
  • This study were carried out to evaluate the effect of quantities of substrate on the yields for 2 years $(1993{\sim}1994)$. The substrates are cotton waste, rice straw and rice hull. It were revealed that cotton waste mixed rice straw was the best yield of fruit body. It gave more increased $(10{\sim}22%)$ than other substrates $(7{\sim}15%)$ when increasing the quantities of substrate. And cotton waste mixed with rice hull was most fast for first pinhead formation.

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THE C-M DIAGRAM OF THE GLOBULAR CLUSTER, NGC 6752

  • Lee, See-Woo;Cannon, R.D.
    • Journal of The Korean Astronomical Society
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    • v.13 no.1
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    • pp.15-26
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    • 1980
  • The BV-photographic photometry was made for 1714 stars (V<19.5) in NGC 6752. The C-M diagram of this cluster shows an unusually extended blue horizontal branch $(V=13.5{\sim}17.8)$ with a wide gap $(V=16{\sim}16.7)$ and the well defined giant branch with gaps at V=13.85 and 16.2. The turnoff point is defined at $V=17.25{\pm}0.15$ and (B-V) = $0.46{\pm}0.02$. If we take $V_{HB}=13.85$ for NGC 6752, then ${\Delta}V=2.80,\;(B-V)_{0,g}=0.76\;and\;{\Delta}V_{TO}=3.40$ and the chemical abundance is estimated to be [Fe/H]=-1.67 or $Z=4.3{\times}10^{-4}\;and\;Y=0.26$. Some other physical parameters of this cluster are derived and compared with those for the well observed clusters M 3, M 13, M 15 and M 92.

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Characterization of interfacial electrical properties in InSb MIS structure (InSb MIS구조에서의 계면의 전기적 특성 평가)

  • Lee, Jae-Gon;Choi, Sie-Young
    • Journal of Sensor Science and Technology
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    • v.5 no.6
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    • pp.60-67
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    • 1996
  • The interfacial electrical properties of InSb MIS structure with low temperature remote PECVD $SiO_{2}$ have been characterized. The interlace-state density at mid-bandgap of the MIS structure was about $1{\sim}2{\times}10^{11}\;cm^{-2}eV^{-1}$, when the $SiO_{2}$ film was deposited at $105^{\circ}C$. However, large amount of interlace states and trap states were observed in the MIS structure fabricated at temperatures above $105^{\circ}C$. The time constant of $10^{-4}{\sim}10^{-5}\;sec$ of interface states was extracted from G- V measurement. As the deposition temperature increased, the hysteresis of C- V curves were increased due to the high trap density.

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The Effect of Vanadium(V) Oxide Content of V2O5-WO3/TiO2 Catalyst on the Nitrogen Oxides Reduction and N2O Formation (질소산화물 환원과 N2O 생성에 있어서 V2O5-WO3/TiO2 촉매의 V2O5 함량 영향)

  • Kim, Jin-Hyung;Choi, Joo-Hong
    • Korean Chemical Engineering Research
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    • v.51 no.3
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    • pp.313-318
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    • 2013
  • In order to investigate the effect of $V_2O_5$ loading of $V_2O_5-WO_3/TiO_2$ catalyst on the NO reduction and the formation of $N_2O$, the experimental study was carried out in a differential reactor using the powder catalyst. The NO reduction and the ammonia oxidation were, respectively, investigated over the catalysts compose of $V_2O_5$ content (1~8 wt%) based on the fixed composition of $WO_3$ (9 wt%) on $TiO_2$ powder. $V_2O_5-WO_3/TiO_2$ catalysts had the NO reduction activity even under the temperature of $200^{\circ}C$. However, the lowest temperature for NO reduction activity more than 99.9% to treat NO concentration of 700 ppm appeared at 340 with very limited temperature window in the case of 1 wt% $V_2O_5$ catalyst. And the temperature shifted to lower one as well as the temperature window was widen as the $V_2O_5$ content of the catalyst increased, and finally reached at the activation temperature ranged $220{\sim}340^{\circ}C$ in the case of 6 wt% $V_2O_5$ catalyst. The catalyst of 8 wt% $V_2O_5$ content presented lower activity than that of 8 wt% $V_2O_5$ content over the full temperature range. NO reduction activity decreased as the $V_2O_5$ content of the catalyst increased above $340^{\circ}C$. The active site for NO reduction over $V_2O_5-WO_3/TiO_2$ catalysts was mainly related with $V_2O_5$ particles sustained as the bare surface with relevant size which should be not so large to stimulate $N_2O$ formation at high temperature over $320^{\circ}C$ according to the ammonia oxidation. Currently, $V_2O_5-WO_3/TiO_2$ catalysts were operated in the temperature ranged $350{\sim}450^{\circ}C$ to treat NOx in the effluent gas of industrial plants. However, in order to save the energy and to reduce the secondary pollutant $N_2O$ in the high temperature process, the using of $V_2O_5-WO_3/TiO_2$ catalyst of content $V_2O_5$ was recommended as the low temperature catalyst which was suitable for low temperature operation ranged $250{\sim}320^{\circ}C$.

The Synthesis of Carbamoylsulfenyl Chloride and its Derivatives (염화카바모일술페닐과 그 유도체의 합성)

  • Surk Sik Moon;Dong Young Oh
    • Journal of the Korean Chemical Society
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    • v.27 no.2
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    • pp.157-164
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    • 1983
  • N-Methylidene-2,6-diethylaniline (III) was prepared by the reaction of 2,6-diethylaniline (II) with an excess paraformaldehyde. The protons of N=$CH_2$in the compound III exhibited a second order NMR spectrum. The compound III reacted with bifunctional chlorocarbonylsulfenyl chloride(IV) to give N-(chloromethyl)-N-(2,6-diethylphenyl)-carbamoylsulfenyl chloride(V). The reaction of the compound V with various alcohols resulted in the formation of Alkyl N-(chloromethyl)-N-(2,6-diethylphenyl)-carbamoylsulfenate esters(VI${\sim}$XVI) in 71${\sim}$95% yields. The compound VI${\sim}$XVI decomposed gradually, but the thermal rearrangement of S-O bonding to S=O bonding was not found. The nucleophilic attack of an excess alcohol to the compound Ⅴ was made on both divalent sulfur and ${\alpha}$-carbon of N-chloromethyl group. The corresponding substituted products(XVII, XVIII) had considerable stability.

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The Effect of $MnO_2$ Addition on the $V_2O_5/TiO_2$ Catalytic Filters for NO Reduction (NO 환원반응을 위한 $V_2O_5/TiO_2$계 촉매필터의 $MnO_2$ 조촉매 효과)

  • Shin, Hae-Joong;Choi, Jae-Ho;Song, Young-Hwan;Lee, Ju-Young;Jang, Sung-Cheol;Choi, Joo-Hong
    • Proceedings of the SAREK Conference
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    • 2008.11a
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    • pp.363-368
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    • 2008
  • Nitrogen oxides (NO, $NO_2$ and $N_2O$) have been controlled effectively by the SCR catalysts coated on monolith or honeycomb in commercial sites with ammonia as reductant at high temperature range $300{\sim}400^{\circ}C$. However, the catalytic filter has much merit on the point of controlling the particles and nitrogen oxides simultaneously. It will be more advanced-system if the catalytic working temperature is reduced to the normal filtration temperature of under $200^{\circ}C$. This study has focus on the development of the catalytic filter working at the low temperature. So the additive effect of the components such as Pt and Mn (which are known the catalytic component of $V_2O_5/TiO_2$ was investigated. The $V_2O_5-WO_3$ catalytic filter exhibited high activity and selectivity at $250{\sim}320^{\circ}C$ showing more than 95% NO conversion for the treatment of 600 ppm NO at face velocity 2 cm/s. The Pt-$V_2O_5-WO_3$ catalytic filter shifted the optimum working temperature towards the lower temperature ($170{\sim}200^{\circ}C$). And NO conversion was 100% and higher than that of $V_2O_5-WO_3$ catalyst at $250{\sim}320^{\circ}C$. The $MnO_X-V_2O_5-WO_3$ catalytic filter showed the wide temperature range of $220{\sim}330^{\circ}C$ for more than 95% NO conversion. This is a remarkable advantage when considered the $MnO_X$ catalytic filter presents the maximum activity at $150{\sim}250^{\circ}C$ and $V_2O_5-WO_3$ catalytic filter shows the maximum activity at $250{\sim}320^{\circ}C$.

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Sintering Temperature Effect on Electrical and Dielectric Stability of ZPCCL-Based Varistors (소결온도가 ZPCCL계 바리스터의 전기적, 유전적 안정성에 미치는 영향)

  • Nahm, Choon-Woo
    • Korean Journal of Materials Research
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    • v.16 no.8
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    • pp.466-472
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    • 2006
  • The electrical, dielectric properties, and its stability of ZPCCL-based varistors were investigated for different sintering temperatures in the range of $1230{\sim}1300^{\circ}C$. As the sintering temperatures increased, the varistor voltage decreased in the range of $777.9{\sim}108$ V/mm, the nonlinear coefficient decreased in the range of $77.9{\sim}7.1$, and the leakage current increased in the range of $0.3{\sim}50.6\;{\mu}A$. The stability of electrical and dielectric characteristics was obtained from sintering temperature of $1260^{\circ}C$. the varistors sintered at $1260^{\circ}C$ marked the high electrical and dielectric stability, with $%{\Delta}{V_{1mA}=+1.9%,\;%{\Delta}{\alpha}=-10.6%,\;%{\Delta}I_L=+20%\;and\;%{\Delta}tan\;{\delta}=+9.9%$ for DC accelerated aging stress state of $0.95V_{1mA}/150^{\circ}C$/24 h.