• Title/Summary/Keyword: V-ERAM

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A Comparative Study on the Museum Visitor Circulation with Spatial Analysis Theory base on Visual Perception (시지각 기반의 공간분석이론에 따른 관람동선 비교 연구)

  • Jung, Su-Yuong;Lim, Che-Zinn;Yoon, Sung-Kyu
    • Korean Institute of Interior Design Journal
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    • v.20 no.3
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    • pp.198-205
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    • 2011
  • The study on how visitors of a museum view exhibition is necessary for providing quality experience to the visitors. Previous studies on the movement of visitors of a museum focused on qualitative analysis after the follow-up survey. Therefore, the purpose of this study is to find out various ways to use quantitative analysis methods on the movement of visitors in the museum. Quantitative analysis of the exhibition place and movement of visitors was conducted using programs to produce quantitative results from the space analysis including VAE, VGA, V-ERAM and ESA. VAE and VGA helped to understand the spatial structure and ESA was helpful to predict how the flow of human traffic would be in the museum. If the programs are used all together, it would be easier to quantitatively predict how the How of human traffic would be in an exhibition room. However, this study is in its infancy, so following studies are necessary based on more data and results of analysis in the future.

Characteristics of $Pt/SrBi_2Ta_2O_9/ZrO_2/Si$ structures for NDRO ERAM (NDRO FRAM 소자를 위한 $Pt/SrBi_2Ta_2O_9/ZrO_2/Si$ 구조의 특성에 관한 연구)

  • 김은홍;최훈상;최인훈
    • Journal of the Korean Vacuum Society
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    • v.9 no.4
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    • pp.315-320
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    • 2000
  • We have investigated the crystal structure and electrical properties of Pt/SBT/$ZrO_2$/Si (MFIS) and Pt/SBT/Si (MFS) structures for the gate oxide of ferroelectric memory. XRD spectra and SEM showed that the SBT film of SBT/$ZrO_2$/Si structure had larger grain than that of SBT/Si structure. $ZrO_2$ film between SBT film and Si substrate is confirmed as a good candidate for a diffusion barrier by the analysis of AES. The remanent polarization decreased and coercive voltage increased in Pt/SBT/$ZrO_2$/Pt/$SiO_2$/Si structure. This effect may increase memory window of MFIS structure directly related to the coercive voltage. From the capacitance-volt-age characteristics, the memory windows of Pt/SBT (210 nm)/$ZrO_2$ (28 nm)/Si structure were in the range of 1~l.5 V at the applied voltage of 4~6 V. The current densities of Pt/SBT/ZrO$_2$/Si with as -deposited Pt electrode and annealed at $800^{\circ}C$ in $O_2$ambient were $8\times10^{-8} A/\textrm{cm}^2$ and $4\times10^{-8}A/\textrm{cm}^2$ , respectively.

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