• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.3
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• pp.240-249
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• 1995

Rutile type of $TiO_{2}$ single crystal was grown by floating zone method in order to obtain the highly transparent and contamination-free single crystal. The linear refractive index of perpendicular and parallel to c-axis was measured as a function o f wavelength from 500 to 1000nm. The optical energy band gap was estimated as 2.99 eV from the absorption spectrum. The theoretical $\chi^{(3)}$} value of $TiO_{2}$ was discussed in comparison with that of $SiO_{2}$ quartz single crystal on the basis of semiempirical model. On the other hand, the second-hyperpolarizability, ${\gamma}({Ti}^{4+})$ was calculated in order to describe the effect of $Ti_{4}$ ion on the third order nonlinear optical properties.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.8
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• pp.678-684
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• 2008

A general treatment is to restore abfraction lesions with dental filler materials to reduce stress concentration. A material should be selected from various dental products based on long term experiences of dentist or personal preference concerning filler methods. A quantitative criterion is necessary to make an evaluation of the results as dentists decide treatment methods and dental materials relying on their clinical experiences. The purpose of this study is to find an optimal restoration method and material for noncarious cervical lesions using the finite element method. An objective function was defined to minimize the sum of tension or compression stress. Trial-and-error and approximation were used to find an optimal restoration method. An optimal solution was to fill TetricFlow inside the lesion and Z100 in the remaining region. The most desirable thickness ratio of the two filler materials was 0.125 with trial-and-error and it was similar to the results of approximation, 0.121 and 0.132.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.36 no.9
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• pp.867-873
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• 2008

Model based virtual Flight Control System construction is essential for Fly-by-Wire Flight Control System verification & validation(V&V) of concurrent engineering base. We researched the concept of dual-architecture system for virtual system construction, and analyzed Flight Control System that is applied to high altitude long endurance(HAE) UAS. Finally, we constructed the model based virtual Flight Control System with system analysis and achieved system verification about flight critical failure modes. Analysis target is RQ-4A.

• Journal of Biosystems Engineering
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• v.15 no.4
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• pp.339-345
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• 1990

공기통풍 건조시 공기흐름(airflow)에 대한 곡물저항(grain resistance)은 송풍시스템에서 fan의 선정시 매우 중요하다. 지금까지는 공기흐름에 대한 곡물저항은 주로 Shedd의 curve에 준하여 정해졌다. 그러나 실제의 경우 곡물수확 또는 건조시 기계적 원인에 의하여 미세립자(fine material)가 생성된다. 이에 본 연구에서 밀(red hard winter wheat)을 대상으로 송풍량, 함수율, 미세립자량이 정압강하(static pressure drop)에 미치는 영향을 규명하였고, 이러한 변수가 포함된 수학적 모델을 개발하였다. 독립변수는 0.051로부터 $0.203m^3/m^2.sec$에 이르는 7단계의 각각 다른 송풍량과 3단계의 함수율 (11, 13, 15%w.b), 4단계의 미세립자량(0, 2, 4, 8%)이고, 종속변수는 정압강하이다. 정압강하와 test bed에서의 송풍량은 micromanometer를 사용하여 측정하였다. 결과는 독립변수(송풍량, 함수율, 미세립자량)는 모두 정압강하에 significant하게 영향을 미치는 것으로 나타났다. 규정된 범위내에서 함수율이 증가함에 따라 정압강하는 최고 45% 까지 감소되었고, 반면 미세립자량이 증가함에 따라 정압강하는 최고 195%까지 증가되었다. 수집된 data로서 다음과 같은 regression equation이 개발되었다($P=AV+BV^2+C(MO)V+D(FM)V$). 본 연구의 결과는 공기송풍시스팀에서 송풍량, 함수율, 미세립자량이 정압강하에 미치는 영향을 규명하였고, 에너지 절약적 송풍시스템을 설계하는 데 도움이 될 수 있을 것이다.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2011.11a
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• pp.116-121
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• 2011

Performance of Secondary Injection Thrust Vector Control system is investigated under various secondary injection operating conditions. 3-dimensional converging-diverging nozzle having 8 secondary injection nozzles is used in this numerical study. Total pressure of flow inside the nozzle is about 70bars, and total temperature set to 300K for cold flow simulation. Effect of secondary injection flow rate and injection nozzle configuration is considered in this research. Simulation is conducted with commercial CFD code Ansys Fluent v13. Spalart-Allmaras(1-equation)model is used for turbulence modeling with AUSM+ scheme. Various performance factors as Axial thrust, side force, system specific impulse ratio are considered and explained for system performance evaluation.

• The Journal of the Korea Contents Association
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• v.17 no.1
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• pp.137-144
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• 2017

Face detection is still a challenging task under severe face pose variations in complex background. This paper proposes an effective algorithm which can detect single or multiple faces based on skin color detection and depth information. We introduce Gaussian mixture model(GMM) for skin color detection in a color image. The depth information is from three dimensional depth sensor of Kinect V2 device, and is useful in segmenting a human body from the background. Then, a labeling process successfully removes non-face region using several features. Experimental results show that the proposed face detection algorithm can provide robust detection performance even under variable conditions and complex background.

• The Transactions of the Korean Institute of Power Electronics
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• v.7 no.4
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• pp.322-331
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• 2002

In this paper, a single-phase to three-phase PWM converter topology using a single-phase half-bridge PWM rectifier and a 2-leg inverter for low cost three-phase induction motor drives is proposed. In addition, the source voltage sensor is eliminated with a state observer which controls the deviation between the model current and the system current to be zero. The converter topology is of lower cost than the conventional one, which gives sinusoidal input current, unity power factor, dc output voltage control, bidirectional power flow and VVVF output voltage. The experimental results for V/F control of 3Hp induction motor drives have been shown.

• Journal of Radiation Protection and Research
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• v.11 no.1
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• pp.29-36
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• 1986

GESS-a computer code for simulation of energy spectra for gamma-ray in NaI(T1) scintillator has been developed. The Monte Carlo method was employed to simulate physical behaviours of particle transport in a medium. In the processes of simulation, all the interaction processes such as Rayleigh and Compton scattering, photoelectric effect and pair production were considered. The resulting electron slowing down spectrum was also considered with the CSDA model. For the purpose of verification of the code, a measurement gamma spectrum for incident gamma energy of 1.33 MeV was performed. The measured values appeared to be slightly higher than the theoretically calculated values.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.100-106
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• 1994

A bilayer film consisting of a layer of a-Se$_{75}$ Ge$_{25}$ with a surface layer of silver -100[.angs.] thick and a monolayer film of a-Se$_{75}$ Ge$_{25}$ are irradiated with 9[keV] Ga$^{+}$ ion beam. The Ga$^{+}$ ion (10$^{16}$ [ions/cm$^{2}$] exposed a-Se$_{75}$ Ge$_{25}$ and Ag/a-Se$_{75}$ Ge$_{25}$ thin films show an increase in optical absorption, and the absorption edge on irradiation with shifts toward longer wavelength. The shift toward longer wavelength called a "darkening effect" is observed also in film exposure to optical radiation(4.5*10$^{20}$ [photons/cm$^{2}$]). The 0.3[eV] edge shift for ion irradiation films is about twice to that obtained on irradiation with photons. These large changes are primarily due to structural changes, which lead to high etch selectivity and high sensitivity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.889-895
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• 2008

This paper presents a comprehensive mathematical analysis and simulation of trench IGBT with the help of PIN-PNP combinational model. Since trench IGBT is characteristically influenced by PIN diode, it may be almost impossible to analyze the trench IGBT using PNP-MOS modeling methods, even PIN-MOS techniques which neglect the hole current components coming into p-base region. A new PIN-PNP complementary cooperational model is developed in order to make up the drawbacks of existing models. It would allow us to make qualitative analysis as well as simulation about switching and on-state characteristics of 1,700 V trench IGBT. Moreover, if we improve the PIN diode effects through the optimization of trench structure, trench IGBT is expected to be one of the most promising devices in the not only high-voltage but also high speed switching device field.