• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.341.1-341.1
• /
• 2014

In the advanced material for the next generation display device, transparent amorphous oxide semiconductors (TAOS) are promising materials as a channel layer in thin film transistor (TFT). The TAOS have many advantages for large-area application compared with hydrogenated amorphous silicon TFT (a-Si:H) and organic semiconductor TFT. For the reasonable characteristics of TAOS, The a-IGZO has the excellent performances such as low temperature fabrication (R.T~), high mobility, visible region transparent, and reasonable on-off ratio. In this study, we investigated how the electric characteristics and physical properties are changed as various oxygen ratio when magnetron sputtering. we analysis a-IGZO film by AFM, EDS and I-V measurement. decreasing the oxygen ratio, the threshold voltage is shifted negatively and mobility is increasing. Through this correlation, we confirm the effect of oxygen ratio. We fabricated the bottom-gate a-IGZO TFTs. The gate insulator, SiO2 film was grown on heavily doped silicon wafer by thermal oxidation method. a-IGZO channel layer was deposited by RF magnetron sputtering. and the annealing condition is $350^{\circ}C$. Electrode were patterned Al deposition through a shadow mask(160/1000 um).

• Applied Chemistry for Engineering
• /
• v.2 no.4
• /
• pp.330-339
• /
• 1991

The acid properties of $V_2O_5-TiO_2/SiO_2$ catalysts and the partial oxidation of o-xylene into phthalic anhydride had been investigated in order to relate the acid property of catalyst to the catalytic activity. $V_2O_5$ had both weak (V=O) and strong (V-O-V) acid sites which gave pyridine desorption peaks at $230^{\circ}C$ and $300^{\circ}C$, respectively, and the amount of weak acid sites at $230^{\circ}C$ decreased with the increase of calcination temperature. On the other hand, the amount of weak acid sites increased considerably by increasing the amount of $TiO_2$ to the $V_2O_5-TiO_2/SiO_5$, and the maximum value was shown at 20 and higher mole % of $TiO_2$ with respect to $SiO_2$. In the oxidation of o-xylene, $V_2O_5-TiO_2/SiO_2$ enhandced more the total conversion and the selectivity to phthalic anhydride than $V_2O_5/SiO_2$, and the higher $TiO_2$ ratio to $V_2O_5$ increased the total conversion but could not change the selectivity to phthalic anhydride. Weak acid sites (V=O) led o-xylene to partial oxidation producing phthalic anhydride by adsorbing o-xylene weakly, while acid sites (V-O-V) led it to total oxidation producing CO and $CO_2$ by adsorbing it strongly.

• Journal of rehabilitation welfare engineering & assistive technology
• /
• v.8 no.1
• /
• pp.1-7
• /
• 2014

In this study, the effect of the automotive haptic-seat technology which can transmit the driving information by the vibro-stimulus from the seat was investigated to overcome previous system's limitation relied on the visual and audial method and to help handicap driving. A prototype haptic seat covers with 30 coin-type motors and driver module were developed for this sake. A driving simulator on the 6-DOF motion-base was used for driving situation and we executed the seat vibro-stimulus test with 10 young participants who have normal tactile sense. The haptic recognition ratio by 30 locations was measured and analyzed in the result. The intensity of vibro-stimulus was adjusted by input voltage of motors (1.5V,2.5V,3.5V). All vibro-stimulus locations at 2.5V and 3.5V could be recognized by all participants and even in the lowest recognition ratio of 1.5V. The results showed that the seat vibration stimulus could be useful to transfer the drivers' information while driving.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.14 no.1
• /
• pp.207-213
• /
• 1990

Natural convection heat transfer in rectangular air enclosure was studied interferometrically and numerically for the use of adiabatic and constant temperature horizontal boundary conditions. In the isothermal horizontal boundary case with the temperature difference ratio, .DELTA. $T_{v/}$.DELTA. $T_{H}$ .simeq. 1 temperature distribution in the enclosure is strongly stratified and the average Nusselt Number is higher than that of adiabatic horizontal boundary case.ase.

• Asia-Pacific Journal of Business Venturing and Entrepreneurship
• /
• v.7 no.2
• /
• pp.101-111
• /
• 2012

In the ALC(Autoclaved lightweight concrete) manufacturing process, if the pre-cured semi-cake is removed after proper time is passed, it will be hard to retain the moisture and be easily cracked. Therefore, in this research, we took the research by multiple regression analysis to find relationship between variables for the prediction the hardness that is the control standard of the removal time. We study the relationship between Independent variables such as the V/T(Vibration Time), V/T movement, expansion height, curing time, placing temperature, Rising and C/S ratio and the Dependent variables, the hardness by multiple regression analysis. In this study, first, we calculated regression equation by the regression analysis, then we tried phased regression analysis, best subset regression analysis and residual analysis. At last, we could verify curing time, placing temperature, Rising and C/S ratio influence to the hardness by the estimated regression equation.

• Bulletin of the Korean Chemical Society
• /
• v.25 no.2
• /
• pp.263-266
• /
• 2004

A sensitive, selective and rapid method has been developed for the determination ${\mu}$g/L level of vanadium ion based on the rapid reaction of vanadium(V) with 2-(2-quinolylazo)-5-diethylaminophenol (QADEAP) and the solid phase extraction of the colored chelate with $C_{18}$ cartridge. The QADEAP reacts with V(V) in the presence of citric acid-sodium hydroxide buffer solution (pH = 3.5) and cetyl trimethylammonium bromide (CTMAB) medium to form a violet chelate of a molar ratio 1 : 2 (V(V) to QADEAP). This chelate was enriched by solid phase extraction with $C_{18}$cartridge and the enrichment factor of 50 was obtained by elution of the chelates from the cartridge with ethanol. The molar absorptivity of the chelate is $1.28 {\times}10^5L\;mol^{-1}cm^{-1}$ at 590 nm in the measured solution. Beer's law is obeyed in the range of 0.01-0.6 ${\mu}$g/mL. The detection limit is 0.04 ${\mu}$g/L in the original samples. This method was applied to the determination of vanadium(V) in water and biological samples with good results.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2005.05a
• /
• pp.295-298
• /
• 2005

High temperature deformation behavior of $\alpha\;and\;\beta$ phase of Ti-6Al-4V was investigated within the framework of a self-consistent approach at various temperature ranges. To examine the flow behavior of u-phase, Ti-7.0Al-1.5V alloy was used, whose chemical composition is close to that of the $\alpha$ phase in Ti-6Al-4V at hot working temperatures. The flow stress of $\beta$ phase was predicted by using self-consistent approach. The flow stress of $\alpha$ phase was higher than that of $\beta$ phase above $750^{\circ}C$, while the $\beta$ phase revealed higher flow stress than a phase at $650^{\circ}C$. It was found that the relative strength and strain rate ratio between $\alpha\;and\;\beta$ phase significantly varied with temperature. From this approach, the mode for grain matrix deformation was proposed as a mixed type of both iso-stress and iso-strain rate modes.

• Journal of the Korea institute for structural maintenance and inspection
• /
• v.15 no.5
• /
• pp.82-91
• /
• 2011

In this study, 24 prototype specimens were tested to find out the shear behavior and strength of large anchorage system exceeding 50mm(2") in anchor bolt diameter($d_0$) and 635mm(25") in effective embedment depth($h_{ef}$) not addressed by ACI349-06 Appendix B. Test variables are anchor bolt diameter($d_0$ = 63.5, 76.2, 88.9mm), effective embedment depth($h_{ef}$=635, 762mm), and edge distance($c_1$=381, 508, 762mm). Concrete compressive strength is constant($f_{ck}$=38MPa). Test results ($V_{test}$) were overestimated by $V_{aci06}$(shear strength by ACI 349-06) and $V_{ccd}$(shear strength by CCD method). In large anchorage system exceeding 50mm(2") of anchor bolt diameter($d_0$) and 635mm(25") of anchor bolt effective embedment depth($h_{ef}$), the bolt diameter variation and effective embedment depth($h_{ef}$) has no influence on the shear strenth, But, according to the analysis results of the feature ratio on edge distance($c_1$) and anchor bolt diameter, the feature ratio become smaller, which means anchor bolt diameter is bigger, predicted ratio of test results and predicted equation is larger. It was found that anchor bolt diameter is immediate cause of deterioration in the shear capacity of large anchorage system. To improve and extend the validity of current design recommendations further theoretical and numerical work is needed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.353-353
• /
• 2012

InAs nanowires (NWs)는 나노소자스케일의 전자소자나 광전자소자를 위한 기본 단위(building block)로 사용될 수 있고, 1차원적 나노구조를 가지면서 나타나는 특별한 전기적, 광학적 특성으로 인해 전계효과 트랜지스터, 레이저, 광발광 다이오드, 가스 검출 센서 등의 많은 응용소자로 활용을 위한 연구가 진행되 있으며 주로 실리콘, 갈륨비소 기판 위에 금속유기기상 증착(MOCVD) 또는 분자선 증착 (MBE)을 이용하여 선택적 수직배열 성장 조절을 위한 연구와 특성 평가 연구가 주로 이뤄지고 있다. 본 연구에서는 InAs NWs를 MBE 장치를 이용하여 Si(111) 기판 위에 Au와 같은 촉매를 사용하지 않고 Si과 InAs의 큰 격자 불일치로 인하여 성장되는 Volmer-weber 성장 모드를 이용 하였다. InAs NW 성장모드는 Si ($5.4309{\AA}$)과 InAs ($6.0584{\AA}$) 사이에 큰 격자상수 차이를 이용하게 되는데 촉매를 사용하여 성장하는 일반적인 이종 화합물 반도체 성장 모드와 달리 액상상태가 존재하지 않고 바로 In과 As이 Si 기판 위를 이동하여 수직방향으로 성장이 이루어지는 vaporsolid(VS) 모드이다. InAs NW V-S 성장 모드는 Si 기판과의 격자 상수차에 의한 스트레스를 이용해야 하므로 Si기판 위에 존재하는 native oxide는 완벽히 제거되어야 한다. InAs NW 최적 성장 조건을 찾기위해 V/III raitio, 성장 온도, 기판표면처리 등의 성장 변수를 변화 시켜가며 실험을 수행하였다. Native oxide를 제거하기 위하여 HF와 buffered oxide etchant (BOE)를 사용하였다. InAs NWs 성장조건은 Indium flux를 고정 시키고 V/III ratio는 50~400까지 변화를 주었다. V/III ratio를 200으로 고정을 시키고 성장온도를 $375{\sim}470^{\circ}C$에서 성장 하였다. 이 때 InAs NWs는 $430^{\circ}C$에서 가장 높은 밀도와 aspect ratio를 얻을 수 있었다. Arsenic flux에 대해서는 많을 수록 좋은 aspect ratio를 얻을 수 있었다. 하지만 InAs 구조의 절대 부피는 거의 같다는 것을 확인 할 수 있었고 이는 온도와 V/III ratio가 Indium adatom의 surface migration length에 대하여 중요한 요소로 작용되는 것을 알 수 있었다.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.5
• /
• pp.117-124
• /
• 1996

The .mu.c-Si:H films have been deposited by PeCVD at the various conditions such as hydrogen dilution ratio, substrate temperature and RF power density. Then, we studied their electrical and optical properties. Top gate hydrogenated micro-crystalline silicon thin film transistors($\mu$c-Si:H TFTs) using $\mu$-Si:H and a-SiN:H films have been fabricated by FECVD. The electrical characteristics of the devices have been investigated by semiconductor parameter analyzer and compared with amorphous silicon thin film transistors (a-Si:H TFTs). In this study, on/off current ratio, threshold voltage and the field effect mobility of the $\mu$c-Si:H TFT were $3{\times}10^{4}$, 5.06V and 0.94cm$^{2}$Vs, respectively.