• Journal of the Korean Ceramic Society
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• v.40 no.11
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• pp.1113-1119
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• 2003

We used isopropanol which has low boiling point to prepare thin films at low temperature and changed mole concentration of zinc acetate from 0.3 to 1.3 mol/l. The structural, optical and electrical properties of ZnO thin films with Zn content were investigated. ZnO thin films highly oriented along the c-axis were obtained at Zn concentration of 0.7 mol/l. ZnO thin films with Zn concentration of 0.7 mol/l showed a homogeneous surface layer of nano structure. The transmittance of ZnO thin films by UV-vis. measurement was about 87% under the Zn concentration of 0.7 mol/l, but rapidly decreased over the 1.0 mol/l. The optical band gap energy was obtained from 3.07 to 3.22 eV which is very close to the band gap of bulk ZnO (3.2 eV). The electrical resistivity of ZnO thin films was about 150 $\Omega$-cm that shows little difference with Zn concentration. I-V curves of ZnO thin films exhibited typical ohmic contact properties.

• Korean Chemical Engineering Research
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• v.54 no.1
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• pp.127-134
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• 2016

A series of Ce-doped ZnO (Ce/ZnO) nanostructures were fabricated using the co-precipitation method, then a simply nontoxic hydrothermal approach was proposed for preparation of reduced graphene oxide (rGO)-Ce/ZnO composites. The synthesized composites were investigated by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT-IR), photoluminescence spectroscopy (PL), electrochemical impedance spectroscopy (EIS), UV-vis diffuse reflectance spectroscopy (DRS) techniques and Raman pattern. The as-synthesized rGO-Ce/ZnO composites showed high photodecomposition efficiency in comparison with the rGO-ZnO, Ce/ZnO, pure ZnO under UV, visible-light and sunlight irradiation. The degradation of methylene blue (MB) (10 mg/L, 100ml) by 95.8% within 60 min by using rGO-2 (10 mg) under sunlight irradiation was observed. The repeated use of the rGO-2 was investigated, and the results showed almost no decay in the catalytic activity.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.3
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• pp.97-101
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• 2005

ZnO thin films were grown at different plume-substrate (P-S) angles of 90$^{\circ}$ (on-axis PLD), 45$^{\circ}$ and 0$^{\circ}$ (off-axis PLD) using pulsed laser deposition. The x-ray diffraction pattern exhibiting a dominant (002) and a minor (101) peak of ZnO indicates all films were strongly c-axis oriented. By observing of (002) peak, the FWHMs of ZnO (002) peaks decreased and c-axis lattice constant approached the value of bulk ZnO as P-S angle decreased. Whereas the carrier concentration of ZnO thin film deposited at P-S angle of 90$^{\circ}$ was ~ 10$^{19}$ /cm$^{3}$, the Hall measurement of ZnO thin films deposited at P-S angles of 0$^{\circ}$ and 45$^{\circ}$ was impossible due to the decrease of the carrier concentration by the improvement of stoichiometry and crystalline quality. By decreasing P-S angle, the grain size of the films and the UV intensity investigated by photoluminescence (PL) increased and UV peak position showed red shift. The improvement of properties in ZnO thin films deposited by off-axis technique was due to the decrease of repulsive force between a substrate and the particle in plume and the relaxation of supersaturation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.445-448
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• 2016

Transparent UV photodetector was achieved by using wide bandgap metal oxide materials. In order to realize transparent heterojunction UV photodetector, n-type ZnO and p-type NiO metal oxide materials were employed. High light-absorbing SnS layer was inserted into the n-ZnO and p-NiO layers. High-performing UV photodetector was realized by ZnO/SnS/NiO/ITO structures to provide extremely fast response times (Fall time: $7{\mu}s$ and rise time: $13{\mu}s$) and high rectifying ratio. The use of functional SnS-embedded photodetector would provide a route for high functional photoelectric devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.285-285
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• 2010

Zinc oxide (ZnO) is a direct band gap semiconductor with 3.37 eV, which has in a hexagonal wurtzite structure. ZnO is a good candidate for a photocatalyst because it has physical and chemical stability, high oxidative properties, and absorbs of ultraviolet light. During ZnO is irradiated by UV light, redox (reduction and oxidation) reactions will occur on the ZnO surface, generating the radicals O2- and OH. These two powerful oxidizing agents have been proven to be effective in decomposition of harmful organic materials, converting them into CO2 and H2O. Therefore, we assume that oxygen on the surface of ZnO is a very important factor in the photocatalytic activities of ZnO nanoparticles. Recently, ZnO nanoparticles are studied in various application fields by many researchers. Photocatalyst research is progressing much in various application fields. But the ZnO nanoparticles have disadvantage that is unstable in water in comparison titanium dioxide (TiO2). The Zn(OH)2 was formed at the ZnO surface and ZnO become inactive as a photocatalyst when ZnO is present in the solution. Therefore, we prepared synthesized ZnO nanoaprticles that were immersed in the water and dried in the oven. After that, we measured photocatalytic activities of prepared samples and find the cause of their phtocatalytic activity changes. The characterization of ZnO nanoparticles were analyzed by Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) and BET test. Also we defined the photocatalytic activity of ZnO nanoparticles using UV-VIS Spectroscopy. And we explained changing of photocatalytic activity after the water treatment using X-ray Photoelectron Spectroscopy (XPS).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.182-182
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• 2010

본 연구에서는 Pt 배면전극에 다양한 조건에서의 ZnO를 성장하여 Schottky 구조를 제작, 접합 특성 및 자외선 검출 특성을 연구하였다. $Al_2O_3$ 기판에 Mirror-like하며 고결정성을 갖는 Pt(111) 배면전극을 형성 후, ZnO 박막의 성장 조건에 따른 접합 특성을 확인하기 위하여 기판온도와 산소분압을 각각 $400{\sim}600^{\circ}C$ ($50^{\circ}C$ 단계), 0~60 sccm (15 sccm 단계)로 성장하였다. 이에 따른 구조적 특성변화를 확인하기 위하여 주사전자현미경 및 X선 회절 특성을 분석하였으며, 전류-전압 특성 곡선을 분석을 통하여 최적의 Schottky contact 형성을 위한 ZnO 성장조건을 규명하고자 하였다. $H_2O_2$를 이용한 표면처리와 Rapid Thermal Annealing (RTA)를 이용한 열처리 과정을 통하여 표면 처리 전 후의 전기적 특성과 광학적 특성의 변화를 비교 분석하였다. 또한 Ohmic 접촉으로 상부전극을 형성, ZnO Schottky photodiode 구조를 제작하여 UV-A, B, C 영역에 따른 UV반응 특성을 분석하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.164-164
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• 2003

UV 발광소자 재료로서 유망한 ZnO film을 ALE법으로 증착하고 photoluminescence특성을 조사하였다. Zn소스로서 DEZn(Diethylzinc)를, 산소 소스로서 DI water를 사용하였고 $N_2$ gas로서 챔버내에 주입된 소스물질을 purge하였다. ALE 공정온도 범위인 17$0^{\circ}C$와 CVD 반응온도 범위인 40$0^{\circ}C$로 ZnO 박막을 증착하고 이 시편을 산소 분위기에서 600-100$0^{\circ}C$의 온도로 1시간 동안 열처리하였다. 그리고 He-Cd laser를 사용하여 photoluminescence를 측정하였다. 17$0^{\circ}C$와 40$0^{\circ}C$ 에서 증착된 시편 모두 as-grown 상태에서는 거의 발광특성을 나타내지 못하였으나 후열처리를 거치면서 발광특성을 나타내었고 열처리 온도가 높을수록 발광강도가 증가하였다. 40$0^{\circ}C$에서의 증착된 시편의 경우는CVD반응이 발생하여 Zn-Zn결합이 많이 생성되어 열처리 온도가 증가하여도 발광강도가 약하였고 가시광 영역의 발광 또한 크게 증가하였으며 17$0^{\circ}C$에서 증착된 시편의 경우는 열처리 온도가 증가할수록 UV영역의 발광강도만이 크게 증가하였으며 가시광 영역의 발광은 거의 증가하지 않았다.

• Applied Chemistry for Engineering
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• v.17 no.3
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• pp.274-279
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• 2006

To synthesize ZnO colloidal solution by a sol-gel process, zinc acetate ($C_{4}H_{6}O_{4}Zn{\cdot}2H_{2}O{\cdot}0.2\;mol$) and lithium hydroxide ($LiOH{\cdot}H_{2}O{\cdot}0.14\;mol$) in the ethanol were added to the solution containing a dispersing agent, hydroxypropyl cellulose (HPC). The nanosize and physical shape of the synthesized ZnO particles were determined by HPC acting as the dispersing agent. Nanosized ZnO particles were also obtained by a precipitation method based on zinc-2-ethylhexagonate. The precipitates were characterized by DLS, XRD, FE-SEM, and UV-vis. As the results, the ZnO colloids tend to self-assemble into a well-ordered hexagonal close-packed structure. The ZnO nanoparticles have an average diameter of nearly 40 nm with a narrow size distribution.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.173-176
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• 2011

The characteristic changes in ZnO thin film according to H- and O- plasma treatments have been studied by Photoluminescence (PL) spectroscopy at room temperature. The red shift of UV peak by 20-30 meV in PL spectra after plasma treatments is identified, which indicates that there are changes in the binding energy of bound exciton and/or the movement of energy levels of lattice defects and impurities. The width of UV peak is decreased after plasma treatments, which is believed to be closely related to the crystal quality of ZnO film. The increase of UV peak intensity after H-plasma treatment is also observed, and this could mean that the radiative recombination is strengthened because the hydrogen atoms in the plasma diffuse into the film where they passivate and neutralize the defects and the impurities.

• Journal of environmental and Sanitary engineering
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• v.10 no.3
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• pp.105-114
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• 1995

There has been increasing awareness on the importance of not only removal of organic materials but also sterilization of microbial cell in the drinking water purification research, so there has been many researches on that area. This study has been designed to analyze the effects of $TiO_{2}$ and ZnO coated on activated carbon on Escherichia coli. In this study, the sterilization power was analyzed by (1) variation of $TiO_{2}$ and ZnO concentration coated on activated carbon (2) variation of UV intensity. In addition, the kinetics between exposure time and sterilization velocity was viewed by the method of Chick. The results are as follows. 1. Survival ratio of E. coli decreased as time goes on in application of $TiO_{2}$, ZnO and $TiO_{2}{\cdot}ZnO$. In $TiO_{2}$ and ZnO, the effect increased upto certain concentration, but decreased there-after. In $TiO_{2}{\cdot}ZnO$, the effect of sterilization was in similar way among 3 combinations. 2. Survival ratio of E. coli decreased proportionately to an increase of light intensity in ZnO and $TiO_{2}{\cdit}ZnO$. In $TiO_{2}$, the survival ratio differed over extent of irradiation but the difference over the light intensity was not significant. 3. When Chick's law of sterilization was applied, m values of three concentrations of $TiO_{2}$ were 1.57,0.98, 1.96 respectively. M values of three concentration of ZnO were 1.10, 1.18,0. 11 respectively and those of three combination of $TiO_{2}{\cdot}ZnO$ were 1.17, 1.24, 1.74 respectively.