• Transactions of the Korean Society of Automotive Engineers
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• v.21 no.5
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• pp.59-66
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• 2013

Lack of the space in many diesel vehicles make it difficult to design and install the catalytic muffler to reduce emissions. For this reason, inlet part of the catalytic muffler is made of L-type which has lower flow uniformity than conventional I-type, and catalytic muffler has complex internal structure by various insertions, which affect the flow uniformity and pressure drop of the systems. In this work, the flow characteristics such as flow uniformity and pressure drop have been numerically investigated by changing such various geometries as inlet shape, porosity, and outlet shape inside the muffler with the three-dimensional turbulent incompressible flow solver. Total 4 different cases are considered in order to find optimal configurations of the catalytic muffler in view of high flow uniformity and low pressure drop. The results show that Case 2 which has no induction cone and outlet perforated pipe has higher uniformity index and lower pressure drop than others considered in this work.

• Journal of The Korean Society of Agricultural Engineers
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• v.54 no.3
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• pp.19-28
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• 2012

Greenhouse cultivation has been increasing for high quality and four season crop production in South Korea. For the cultivation in a greenhouse, maintaining adequate soil moisture at each crop growth stage is quite important for yield stability and quality while the behavior of moisture movement in the soil has complexity and adequate moisture conditions for crops are vary. Drip irrigation systems have been disseminated in the greenhouse cultivation due to advantages including irrigation convenience and efficiency without savvy consideration of the soil moisture redistribution. This study aims to evaluate soil moisture movement of drip irrigation according to the soil moisture uniformity assessment. Richards equation and finite difference scheme were adapted to simulate soil moisture behavior in soil. Soil container experiment was conducted and the model was validated using the data from the experiment. Two discharge rate (1 ${\ell}/hr$ and 2 ${\ell}/hr$) and three spaces between the emitters (10 cm, 20 cm, and 30 cm) were used for irrigation system evaluation. Christiansen uniformity coefficient was also calculated to assess soil moisture redistribution uniformity. The results would propose design guidelines for drip irrigation system installation in the greenhouse cultivation.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.6
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• pp.3714-3721
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• 2015

Although sheath-type heating line is generally used for susceptor heater, performance deterioration problems in temperature uniformity occurs in the case of large scale and high temperature condition. We developed new design and prototype of the susceptor using sheet metal to provide performance improvement in temperature uniformity. Temperature uniformity below 1.4% in the surface temperature condition of $450^{\circ}C$ was verified in the susceptor prototype. Also we developed Kernel regression algorithm to estimate measured temperature using temperature learning data. The reliability of the measured temperature uniformity was confirmed by comparative analysis between predicted data and measured data.

• Journal of ILASS-Korea
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• v.24 no.2
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• pp.51-57
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• 2019

In this study, the spray atomization characteristics of urea injector used in SCR system for construction machinery was analyzed, and the uniformity index at the front of mixer and NOx conversion efficiency were evaluated through numerical analysis. Spray visualization and droplet size/velocity measurement were performed and the measured results were used to verify the spray analysis model to calculate the uniformity index in the exhaust gas after-treatment system. For the flow analysis, STAR-CCM, a three-dimensional CFD, was used and the uniformity index of the SCR system at the front of the mixer was calculated using the droplet dissociation model and the wall collision model. Finally, the DeNOx performance for the average condition of the NRTC driving mode was calculated to understand the NOx conversion efficiency reflecting the exhaust gas temperature. The simulation results show that the uniformity index at the front of mixer was calculated as 0.862 and DeNOx efficiency was 75.9%.

• Transactions of the Korean hydrogen and new energy society
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• v.31 no.6
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• pp.614-621
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• 2020

Recently, as the fine dust is increased and the emission regulations of diesel engines are strengthened, interest in diesel soot filtration devices is rapidly increased. In particular, there is a demand for technology development for higher efficiency of diesel exhaust gas after-treatment devices. As part of this, many studies conducted to increase the exhaust gas treatment efficiency by improving the flow uniformity of the exhaust gas in the DPF and reducing the pressure drop between the inlet and outlet of disel particle filter (DPF). In this study, computational fluid dynamics (CFD) simulation was performed when exhaust gas flows into the canning reduction device equipped with a 13" asymmetric DPF in order to maintain the flow uniformity in the diesel exhaust system and reduce the pressure. In particular, a study was conducted to find the geometry with the smallest pressure drop and the highest flow uniformity by simulating the DPF I/O ratio, exhaust gas temperature, inlet-outlet pressure and flow uniformity according to the geometry and hole size of distributor.

• International Journal of Advanced Culture Technology
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• v.10 no.3
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• pp.295-306
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• 2022

The NOx removal performance of the SCR process depends on various factors such as catalytic factors (catalyst composition, shape, space velocity, etc.), temperature and flow rate distribution of the exhaust gas. Among them, the uniformity of the flow flowing into the catalyst bed plays the most important role. In this study, the flow characteristics in the SCR reactor in the design stage were simulated using a three-dimensional numerical analysis technique to confirm the uniformity of the airflow. Due to the limitation of the installation space, the shape of the inlet duct was compared with the two types of inlet duct shape because there were many curved sections of the inlet duct and the duct size margin was not large. The effect of inlet duct shape, guide vane or mixer installation, and venturi shape change on SCR reactor internal flow, airflow uniformity, and space utilization rate of ammonia concentration were studied. It was found that the uniformity of the airflow reaching the catalyst layer was greatly improved when an inlet duct with a shape that could suppress drift was applied and guide vanes were installed in the curved part of the inlet duct to properly distribute the process gas. In addition, the space utilization rate was greatly improved when the duct at the rear of the nozzle was applied as a venturi type rather than a mixer for uniform distribution of ammonia gas.

• Progress in Superconductivity and Cryogenics
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• v.25 no.4
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• pp.24-27
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• 2023

Until now, many research activities have been conducted to commercialize high-temperature superconducting (HTS) wires for electric applications. Most of all researchers have focused on enhancing the piece length, critical current density, mechanical strength, and throughput of HTS wires. Recently, HTS magnet for generating high magnetic field shows degraded performance due to the deformation of HTS wire by high electro-magnetic force. The deformation can be derived from widthwise thickness non-uniformity of HTS wire mainly caused by wet processes such as electro-polishing of metal substrate and electro-plating of copper. Gradient sputtering process is designed to improve the thickness uniformity of HTS wire along the width direction. Copper stabilizing layer is deposited on HTS wire covered with specially designed mask. In order to evaluate the thickness uniformity of HTS wire after gradient sputtering process, the thickness distribution across the width is measured by using the optical microscope. The results show that the gradient deposition process is an effective method for improving the thickness uniformity of HTS wire.

• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.87-91
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• 2024

SiO₂, renowned for its excellent insulating properties, has been used in the semiconductor industry as a valuable dielectric material. High-quality SiO₂ films find applications in gate spacers and interlayer insulation gap-fill oxides, among other uses. One of the prevalent methods for depositing these SiO₂ films is plasma enhanced chemical vapor deposition (PECVD) favored for its relatively low processing costs and ability to operate at low temperatures. However, compared to the increasingly utilized atomic layer deposition (ALD) method, PECVD exhibits inferior film characteristics such as uniformity. This study aims to produce SiO₂ films with uniformity as close as possible to those achieved by ALD through the adjustment of PECVD process parameters. we conducted a total of nine PECVD processes, varying the process time and gas flow rates, which were identified as the most influential factors on the PECVD process. Furthermore, ellipsometry analysis was employed to examine the uniformity variations of each process. The experimental results enabled us to elucidate the relationship between uniformity and deposition rate, as well as the impact of gas flow rate and deposition time on the process outcomes. Additionally, thickness measurements obtained through ellipsometer facilitate the identification of optimal process parameters for PECVD.

• Journal of Korean Ophthalmic Optics Society
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• v.7 no.2
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• pp.175-180
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• 2002

Use spctrophotometer to estimate thin film uniformity of lens, Compare, and analyze thin film uniformity availability selecting two peaks of Reflectance(R%) measuring on spectrum. Wavelength dependence's Reflectance in position of center, middle and edge of lens etc... obtain thin film's thickness (t) from Wavelength region (${\lambda}_1,{\lambda}_2$) of two peaks of Reflectance. $$t=\frac{1}{2(n^2-\sin^2{\theta})^{1/2}}{\times}\frac{{\lambda}_1{\lambda}_2}{{\lambda}_2-{\lambda}_1}$$ If Reflectance pattern is uniformity value in position of center middle of lens, edge etc... thin film has uniformity. Applied thin film uniformity estimation method to 1st layer $MgF_2$(n=1.38) coating lens. It was about thin film's thickness difference 360nm. Can analyze coating lens' thin film uniformity easily from Reflectance relationship measurement about Wavelength dependence.

• Journal of Korean Institute of Industrial Engineers
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• v.29 no.2
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• pp.179-189
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• 2003

Gate poly-silicon critical dimension is a prime characteristic of a metal-oxide-semiconductor field effect transistor. It is important to achieve the uniformity of gate poly-silicon critical dimension in order that a semiconductor device has acceptable electrical test characteristics as well as a semiconductor wafer fabrication process has a competitive net-die-per-wafer yield. However, on gate poly-silicon critical dimension, the complexity associated with a semiconductor wafer fabrication process entails hierarchical variance components according to run-to-run, wafer-to-wafer and even die-to-die production unit changes. Specifically, estimates of the hierarchical variance components are required not only for disclosing dominant sources of the variation but also for testing the wafer-level uniformity. In this paper, two experimental designs, a two-stage nested design and a randomized complete block design are considered in order to estimate the hierarchical variance components. Since gate poly-silicon critical dimensions are collected from fixed die positions within wafers, a factor representing die positions can be regarded as fixed in linear statistical models for the designs. In this context, the two-stage nested design also checks the wafer-level uniformity taking all sampled runs into account. In more detail, using variance estimates derived from randomized complete block designs, Duncan's multiple range test examines the wafer-level uniformity for each run. Consequently, a framework presented in this study could provide guidelines to practitioners on estimating the hierarchical variance components and testing the wafer-level uniformity in parallel for any characteristics concerned in semiconductor wafer fabrication processes. Statistical analysis is illustrated for an experimental dataset from a real pilot semiconductor wafer fabrication process.