• Interaction and multiscale mechanics
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• v.1 no.1
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• pp.123-142
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• 2008

Current methodologies used for the inference of thin film stresses through curvature measurements are strictly restricted to stress and curvature states which are assumed to remain uniform over the entire film/substrate system. These methodologies have recently been extended to non-uniform stress and curvature states for the thin film subject to non-uniform, isotropic misfit strains. In this paper we study the same thin film/substrate system but subject to non-uniform, anisotropic misfit strains. The film stresses and system curvatures are both obtained in terms of the non-uniform, anisotropic misfit strains. For arbitrarily non-uniform, anisotropic misfit strains, it is shown that a direct relation between film stresses and system curvatures cannot be established. However, such a relation exists for uniform or linear anisotropic misfit strains, or for the average film stresses and average system curvatures when the anisotropic misfit strains are arbitrarily non-uniform.

• International Journal of Industrial Entomology and Biomaterials
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• v.27 no.2
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• pp.312-316
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• 2013

Caffeine is a thermogenic agent that can be used in weight loss products. In order to achieve a sustained release of caffeine, silk fibroin (SF) film was uses as carrier. It has been shown that the loading method of caffeine into SF film affected the uniform distribution of caffeine in the SF film. When caffeine was added directly into SF solution, gelation has been occurred immediately and prevented the uniform distribution of caffeine. On the other hand, caffeine was dissolved in methanol in order to load the caffeine in SF film and crystallize the SF film at the same time. However, due to the fast evaporation of methanol, caffeine was recrystallized on the surface of SF film rather than penetrating into the film. Finally, caffeine was loaded into pre-crystallized SF film and uniform distribution of caffeine could be achieved. There was an initial burst of caffeine during the first 15 min, but after that a sustained release was achieved.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.90-96
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• 2003

Numerical analyses have been performed to obtain the absorption heat and mass transfer coefficients and the absorption mass flux from a falling film of LiBr solution. In the present study, the behavior of laminar-wavy falling film in the vertical absorber was studied analytically and experimentally. The change of absorption performance on mean film thickness, wave amplitude, wave celerity was analysed. The heat and mass transfer equations are solved simultaneously to give the temperature and concentration variations at the LiBr solution/refrigeration vapor interface and at the wall. Effects of uniform film, wavy film and film Reynolds number on the heat and mass transfer coefficients have been estimated. The analytical results of the uniform and wavy falling film in the bare tube was higher than experimental result for $Rd_{t}<100$. The absorption performance showed the maximum at the wavy film by the insert device(spring).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.411-414
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• 2009

It has been investigated for the film uniformity and deposition rate of a-C:H films on glass substrate and polymeric materials in the presence of the modulated crossed magnetic field. We used Plasma CVD, i.e, using a crossed electromagnetic field, for uniform depositing thin film. The optimum discharge condition has been discussed for the gas pressure, the magnetic flux density and the distance between substrate and electrodes, As a result, it is found that the optimum discharge conditions are $CH_4$ concentration $CH_4$=10 %, modulated magnetic flux density B=48 Gauss, pressure P=100 mTorr, discharge power supply voltage V=l kV under these experimental conditions. By using these experimental condition, it is possible to prepare the most uniform film extends over about 160 mm of the film width. In this study, we deposited a-C:H thin film on glass substrate, and have a plan that using this condition, study depositing a-C:H thin film on polymeric substrate in next studies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.431-431
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• 2007

In this paper, the LC alignment characteristics of the NDLC thin film deposited by PECVD and sputtering were reported respectively. The NDLC thin film deposited using sputter showed uniform LC alignment at the 1200 eV of the ion beam intensity and pretilt angle was about $2^{\circ}$ while the NDLC thin film deposited using the PECVD showed uniform LC alignment and high pretilt angle at the 1800 eV of the ion beam intensity. Concerning the ion beam intensity, uniform LC alignment of the NDLC thin film deposited by the sputtering was achieved at the lower intensity. And the pretilt angle of the NDLC thin film deposited by sputter was higher than those of NDLC thin film that was deposited using the PECVD. The uppermost of the thermal stability of NDLC thin film was $200^{\circ}C$, respectively. However, NDLC thin film deposited by the PECVD showed stability at high temperature without defects, compared to NDLC thin film deposited by the sputter.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.39-40
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• 2000

STN LCDs on Plastic Film substrates for mobile communication devices have been researched and developed at KETI in KOREA. The Plastic Film substrate is so weak to heat and pressure that its fabrication process is limited to $110^{\circ}C(Tg)$. In order to maintain uniform pressure on Plastic Film substrate we used newly designed jig and fabrication process. Electro-optical characteristics are better than or equivalent to those of typical glass LCD though it is thinner, lighter-weight, and more robust than glass LCD.

• Corrosion Science and Technology
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• v.5 no.4
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• pp.137-140
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• 2006

The effect of pre-existing barrier-type film on porous aluminum oxide film formation during anodization was investigated to control the uniform film growth rate. Initial potential fluctuations during anodization indicated that the breakdown of barrier-film is preceded before the porous formation and the induction time for the porous film growth increases with the increases of pre-existing film thickness. The porous film growth mechanism is lot affected by the presence of barrier film on aluminum surface. In parallel, uniform growth of barrier film underneath the porous structure was attained by two-step anodization processes.

• Structural Engineering and Mechanics
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• v.74 no.2
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• pp.215-225
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• 2020

Thin films easily wrinkle under compressive loading due to their small bending stiffness resulting from their tiny thickness. For a thin film deposited on a functionally graded substrate with non-uniform stiffness exponentially changes along the length span in this paper, the uniaxial wrinkling problem is solved analytically in terms of hyper-Bessel functions. For infinite, semi-infinite and finite length systems the wrinkling load and wrinkling wavenumber are determined and compared with those in literature. In comparison with a homogeneous substrate-bounded film in which the wrinkling pattern is uniform along the length span, for a functionally graded substrate-film system the wrinkles accumulate around the softer location of the functionally graded substrate. Therefore, the effective length of the film influenced by the wrinkles decreases, the amplitude of the wrinkles on softer regions of the functionally graded substrate grows and the wrinkling load of the functionally graded substrates with higher softening rate decreases more. The results of the current research are expected to be useful in science and technology of thin films and wrinkling of the structures especially living tissues.

• Journal of Magnetics
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• v.4 no.1
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• pp.22-25
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• 1999

Recently we reported the evolutionary transition from the positive magnetoresistance to the negative was discovered in the transverse configuration as the thickness of permalloy film increases. The discovered peculiarities of positive magnetoresistance phenomenal were explained in the framework of the uniform rotation model of the film magnetization reversal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.250-250
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• 2009

Thin film of $SnO_2$ was fabricated from plasma enhanced atomic layer deposition technology with bubbler type injector system by using TEMASn (tetrakisethylmethylamino tin) precursor. Mostly crystalline of $SnO_2$ films can be obtained with oxygen plasma and with water at relatively low temperature of $150^{\circ}C$. $SnO_2$ was deposited as an uniform rate of $1.0A^{\circ}$/cycle. In order to obtain uniform film, a seed oxide material was used before TEMASn deposition in ALD process. The process parameters were controlled to obtain dense thin film by atomic deposition methodology. The morphology and characterization of thin film with optimized process condition will be discussed.