• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.387-391
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• 2011

A uncooled infrared ray sensor used in an infrared thermal imaging detector has many advantages. But because the uncooled infrared ray sensor is made by MEMS (micro-electro-mechanical system) process variation of offset is large. In this paper, to solve process variation of offset a ROIC for uncooled infrared ray sensor that has process variation of offset compensation technique using differential delta sampling and reference signal compensation circuit was proposed. As a result of simulation that uses the proposed ROIC, it was possible to acquire compensated output characteristics without process variation of offsets.

• IEMEK Journal of Embedded Systems and Applications
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• v.12 no.2
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• pp.97-103
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• 2017

Thermal imaging is mainly used in military equipment required for night observation. In particular, technologies of uncooled thermal imaging detectors are being developed as applied to low-cost night observation system. Many system integrators require different specifications of the uncooled thermal imaging camera but their development time is short. In this approach, EOSYSTEM has developed a small size, TEC-less uncooled thermal imaging camera module with $32{\times}32mm$ size and low power consumption. Both domestic detector and import detector are applied to the EOSYSTEM's thermal imaging camera module. The camera module contains efficient infrared image processing algorithms including : Temperature compensation non-uniformity correction, Bad/Dead pixel replacement, Column noise removal, Contrast/Edge enhancement algorithms providing stable and low residual non-uniformity infrared image.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.115-118
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• 2000

Uncooled pyroelectric infrared detectors based on BST(B $a_{-x}$S $r_{x}$Ti $O_3$) thin films have been fabricated by RF magnetron sputtering and surface Micromachining technology. The detectors form BST thin film ferroelectric capacitors grown by RF magnetron sputtering on N/O/N(S $i_3$ $N_4$/ $SiO_2$/S $i_3$ $N_4$) membrane. The sputtered BST thin film exhibits highly c-axis oriented crystal structure that no poling treatment for sensing applications is required. This is an essential factor to increase the yield for realization of an infrared image sensor. surface-Micromachining technology is used to lower the thermal mass of the detector by giving maximum sensor efficiency Gold-black is evaporated on top of the sensing elements used the thermal evaporator. fabricated uncooled pyroelectric infrared detectors is highly output voltage at the low temperature(1$^{\circ}C$).).).

• Journal of Institute of Control, Robotics and Systems
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• v.13 no.2
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• pp.128-132
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• 2007

Thermal Imaging systems are reported to be crucial for fire fighting and beginning to be used by fire fighters. The performance of thermal imaging system is determined by both the radiation of infrared from the target and the attenuation of infrared signal in the optical path by the absorption, scattering, diffraction and reflection. In the scene of fire, water drops with various sizes such as vaporized water, wafer mist from sprinkler, and wafer to suppress the fire reside with various gas generated by burning. To measure the transmission of infrared radiation in the scene of fire, fire simulating system and thermal imagers with cooled detector which detects $3{\sim}5{\mu}m$ infrared and uncooled detector fabricated by the MEMS technology which detects $8{\sim}12{\mu}m$ infrared. are made. With thermal imagers and Ire simulating system, the change of thermal image with respect to the change of visibility controlled with the burned fas was measured. It was found that the transmission of infrared was not reduced by the burned gas, which could be explained by the long wavelength of infrared ray compared with visible ray. However, the transmission of infrared ray was largely reduced by the combination of burned gas and water mist supplied by sprinkler. This is contrary to the results of calculated transmission through the pure water mist and shows that the transmission of infrared ray is mostly affected by the compounds of water mist and burned gas. In this case, it was found that the uncooled detector which detects $8{\sim}12{\mu}m$ infrared ray is better than cooled detector which detects $3{\sim}5{\mu}m$ infrared ray for fire fighting.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.464-467
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• 2004

An uncooled infrared sensor has been prepared with sputtering, plasma ash, ICP, and PECVD on a Si wafer In order to analyze the resistance characteristics with the bridge length in the infrared sensor, three samples were prepared with lengths of 0 (no bridge), 15 (short bridge), and 29 urn (long bridge), respectively. I-V curves were measured for their resistance characteristics and EPMA for the dopping concentration of the amorphous Si. The phosphorus concentration was about 4 % and the resistance was increased with the bridge length. The bridge length of cantilever is very important factor for improvement of the efficiency in an infrared sensor.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.4 no.4
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• pp.34-38
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• 2005

This is a widespread requirement for low cost lightweight thermal imaging sensors for both military and civilian applications. Today, a large number of uncooled infrared detector developments are under progress due to the availability of silicon technology that enables realization of low cost IR sensor. System prices are continuing to drop, and swelling production volume will soon drive process substantially lower. The feasibility of micromechanical optical and infrared (IR) detection using microcantilevers is demonstrated. Microcantilevers provide a simple Structurefor developing single- and multi-element sensors for visible and infrared radiation that are smaller, more sensitive and lower in cost than quantum or thermal detectors. Microcantilevers coated with a heat absorbing layer undergo bending due to the differential stress originating from the bimetallic effect. This paper reports a micromachined silicon uncooled thermal imager intended for applications in automated process control. This paper presents the design, fabrication, and the behavior of cantilever for thermomechanical sensing.

• Journal of the Korea Society of Computer and Information
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• v.22 no.11
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• pp.31-37
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• 2017

In this paper, we propose efficient design and construction of an infrared wide angle optical system with low distortion utilizing a high resolution detector for automobile application. The operational convenience and the recognition ability have been improved significantly by applying the high resolution uncooled thermal detector with wide angle optical design. The active ahtermalization mechanism is implemented so that the adjustment of the optical component of the system is to be made automatically according to the temperature change by motorized control. The modulation transfer function (MTF) is about 50% at the Nyquist frequency close the diffraction limit. The distortion is less than 5% at the edge field. As a result, a high-resolution uncooled thermal optical system with wide field of view (FOV) is assembled, aligned and its performance is tested successfully.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.366-371
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• 2012

In this paper, fabricated by MEMS uncooled micro-bolometer detector for the study in the infrared sensitivity enhancement. Absorption layer SiOx-Metal series MDTF (metal-dielectric thin film) by high absorption rate and has a high thermal coefficient of resistance, low noise characteristics were implemented. Then MDTF were made in a vacuum deposition method. And MDTF for the analysis of the physical properties of silicon wafers were fabricated, TCR (temperature coefficient of resistance) value was made in order to measure the glass wafer and FT-IR (Fourier Transform Infrared spectroscopy) values were made in order to measure the germanium window. The analyzed results of MDTF -3 [%/K] has more characteristics of the TCR. And 8~12 um wavelength region close to 70% in the absorption characteristic.

• Journal of Sensor Science and Technology
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• v.27 no.5
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• pp.300-305
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• 2018

The uncooled microbolometer thermal sensor for low cost and mass volume was designed to target the new infrared market that includes smart device, automotive, energy management, and so on. The microbolometer sensor features 80x60 pixels low-resolution format and enables the use of wafer-level vacuum packaging (WLVP) technology. Read-out IC (ROIC) implements infrared signal detection and offset correction for fixed pattern noise (FPN) using an internal digital to analog convertor (DAC) value control function. A reliable WLVP thermal sensor was obtained with the design of lid wafer, the formation of Au80%wtSn20% eutectic solder, outgassing control and wafer to wafer bonding condition. The measurement of thermal conductance enables us to inspect the internal atmosphere condition of WLVP microbolometer sensor. The difference between the measurement value and design one is $3.6{\times}10-9$ [W/K] which indicates that thermal loss is mainly on account of floating legs. The mean time to failure (MTTF) of a WLVP thermal sensor is estimated to be about 10.2 years with a confidence level of 95 %. Reliability tests such as high temperature/low temperature, bump, vibration, etc. were also conducted. Devices were found to work properly after accelerated stress tests. A thermal camera with visible camera was developed. The thermal camera is available for non-contact temperature measurement providing an image that merged the thermal image and the visible image.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.180-182
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• 2005

비냉각형 적외선 검출 회로 설계 시 공정상 변화에 의해 발생하는 센서의 저항값 변동이 크다. 본 논문에서는 이것을 해결하기 위해 차동적 입력 수신 구조를 이용한 방법을 제시하였다. 볼로미터 타입 비냉각형 적외선 영상 센서 회로는 입사된 적외선 에너지 양에 따라 센서의 저항값이 변하는 특성을 이용하며 그에 따른 전압 또는 전류의 변화를 측정하여 적외선의 파장을 알아내는 방식으로 검출회로 설계 시 가장 큰 문제점인 공정상의 변화 등으로 인한 신호검출 회로의 오동작을 개선하기 위하여 검출회로의 입력단을 차동적으로 받아들이도록 설계하였다.