• Title/Summary/Keyword: Ultra-high

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Resource Management Scheme for Improvement of Reliability and Connectivity in wireless USB System (무선 USB 시스템에서 신뢰성과 연결성 향상을 위한 자원 관리 기법)

  • Kim, Jin-Woo;Jeong, Min-A;Lee, Seong Ro
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.39C no.11
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    • pp.1159-1166
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    • 2014
  • In this paper, a resource management scheme for enhancing the network connectivity and reliability in wireless USB system is proposed. Wireless USB protocol is suitable for the application that supports the real-time multimedia service in Ship Area Network since it supports high speed data transfer. However, the device's mobility is caused the dramatic change of link state and network topology, and is occurred the degradation of network performance. Therefore, a resource management scheme for wireless USB system is proposed in this paper. The proposed technique can intelligently treat the change of link state, and solve the degradation of network performance. The simulation results show that proposed protocol can enhance the throughput and delay performance by selecting relay device with better link state.

UHF-HF Dual-Band RFID Tag Antenna Design for Boxes (박스용 UHF-HF 이중대역 RFID 태그 설계)

  • Nam, Seahyeon;Kang, Juwon;Chung, Youchung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.2
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    • pp.93-98
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    • 2018
  • This paper introduces the development of HF(NFC) and UHF band(13.56 MHz, 920 MHz) tag antennas, imbedded in a box. In dual band antennas, the HF band tag can be used to inspect the box using NFC, and the UHF band tag can be used for logistics. The dielectric constant of the box material is measured and used for simulation. The Ntag213 chip manufactured by NXP is used in HF loop antennas, since NFC is possible with Ntag213. For the UHF band, the Higgs-3 chip manufactured by Alien is used. The HF tag antenna is located at the center of the UHF tag antenna, and the location of the HF tag antenna is calculated while considering coupling effects. The designed tag can be used by both the bands for the purposes of logistics and authentication.

Effects of Heat Treatment on the Nutritional Quality of Milk. IV. Effects of Heat Treatment on the Physical and Nutritional Properties of Milk Protein (우유의 열처리가 우유품질과 영양가에 미치는 영향: IV. 우유의 열처리가 우유단백질의 이화학적 성질과 영양에 미치는 영향)

  • Jung, Jong-Wook;Jung, Jiyoon;Mim, Tae Sun;Oh, Sejong
    • Journal of Dairy Science and Biotechnology
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    • v.35 no.4
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    • pp.270-285
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    • 2017
  • Among milk proteins, caseins are not subjected to chemical changes during heat treatment of milk; however, whey proteins are partially denatured following heat treatment. The degree of whey protein denaturation by heat treatment is decreased in the order of high temperature short time (HTST) > low temperature long time (LTLT) > direct-ultra-high temperature (UHT) > indirect-UHT. As a result of heat treatment, several changes, including variations in milk nitrogen, interactions between beta-lactoglobulin and k-casein, variations in calcium sulfate and casein micelle size, and delay of milk coagulation by chymosin action, were observed. Lysine, an important essential amino acid found in milk, was partially inactivated during heat treatment. Therefore, the available amount of lysine decreased slightly (1~4% decrease) after heat treatment, However, the influence of heat treatment on the nutritional value of milk was negligible. Nutritional value and nitrogen balance did not differ significantly between UHT and LTLT in milk. In conclusion, our results showed that heat treatment of milk did not alter protein quality. Whey proteins denatured to a limited extent during the heat treatment process, and the nutritional value and protein quality were unaffected by heat treatment.

Collimator Selection in $^{124}Te$ generated $^{123}I$ SPECT imaging ($^{124}Te$ Target로 생산된 $^{123}I$ SPECT 영상에서의 조준기 선택)

  • Kim, H.J.;Son, H.K.;Bong, J.K.;Nam, K.P.;Lee, H.K.
    • Proceedings of the KOSOMBE Conference
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    • v.1996 no.05
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    • pp.45-48
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    • 1996
  • In the case of $^{123}I$ from the $^{124}Te$ (p,2n)reaction, the radionuclidic impurity is the high-energy gamma-emitting $^{124}I$, which interferes greatly with nuclear medicine images. The choice of a collimator can affect the quality of clinical SPECT images of [I-123]MIBG or [I-123]TPT. The tradeoffs that two different collimators make among spatial resolution, sensitivity, and scatter were studied by imaging a line source at 5cm, 10cm, 15cm distance using a number of plexiglass sheets between source and collimator, petri dist two-dimensional Hoffman brain phantom, and Jaszczak phantom after filling with $^{123}I$ (FWHM, FWTM, Sensitivity) for low energy ultra high resolution parallel hole(LEUHRP) collimator and medium energy general purpose (MEGP) collimator were measured as (9.27mm, 61.27mm $129CPM/[\mu}$ Ci) and (10.53m 23.17mm $105CPM/{\mu}$ Ci), respectively. The image quality of two-dimensional Hoffman brain Phantom with LEUHRP looked better than the one with MEGP. However, the image quality of Jasgczak phantom with LEUHRP looked much worse than the one with MEGP, The results suggest that the MEGP is preferable to LEUHRP for SPECT studies of [I-123]MIBG or [I-123]IPT.

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Implementation of Service Architecture for Hierarchical UHD Broadcasting over Heterogeneous Networks (이기종망에서 계층 부호화된 UHD 방송을 위한 서비스 아키텍처 구현)

  • Seo, Minjae;Paik, Jong Ho
    • Journal of Satellite, Information and Communications
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    • v.9 no.4
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    • pp.38-41
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    • 2014
  • Due to the diversity of device performances and the possibility of providing multimedia service through many networks, media consumption environment has been changed in various ways. In recent, mobile services and broadcasting services started to provided through IP network. According to this flow changes, there was great demand for various multimedia services through heterogenous networks. To solve this problem, MMT was suggested as a standard of multimedia transport which replaces MPEG-2 TS(Transport Stream) which is used for HD(High Definition) transport. MMT can be provided various broadcasting based on IP through terrestrial, satellite, cable broadcasting networks, and also deliver multimedia through many networks at the same time. MMT was risen as a method of servicing UHD broadcasting. In this paper, we present an implementation of service architecture for hierarchical UHD broadcasting over heterogenous networks using MMT.

Investigation on Oil-paper Degradation Subjected to Partial Discharge Using Chaos Theory

  • Gao, Jun;Wang, Youyuan;Liao, Ruijin;Wang, Ke;Yuan, Lei;Zhang, Yiyi
    • Journal of Electrical Engineering and Technology
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    • v.9 no.5
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    • pp.1686-1693
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    • 2014
  • In this paper, oil-paper samples composed of transformer windings were used to investigate the insulation degradation process subjected to partial discharge (PD), with artificial defects inside to simulate the PD induced insulation degradation. To determine appropriate test voltages, the breakdown time obtained through a group of accelerated electrical degradation tests under high voltages was firstly fitted by two-parameter Weibull model to acquire the average breakdown time, which was then applied to establish the inverse power law life model to choose advisable test voltages. During the electrical degradation process, PD signals were synchronously detected by an ultra-high frequency (UHF) sensor from inception to breakdown. For PD analysis, the whole degradation process was divided into ten stages, and chaos theory was introduced to analyze the variation of three chaotic parameters with the development of electrical degradation, namely the largest Lyapunov exponent, correlation dimension and Komogorov entropy of PD amplitude time series. It is shown that deterministic chaos of PD is confirmed during the oil-paper degradation process, and the obtained results provide a new effective tool for the diagnosis of degradation of oil-paper insulation subjected to PD.

Comparison of SPECT Images with $^{99m}Tc$ Collimators ($^{99m}Tc$용 콜리메타의 성능과 SPECT 화상의 영향)

  • Lee, Man-Koo;Lee, Jeong-Ok;Park, Soung-Ock
    • Journal of radiological science and technology
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    • v.24 no.2
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    • pp.35-40
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    • 2001
  • Performance of SPECT imaging systems which use a rotating gamma camera, are affected by characteristics of the detector-collimator assembly, the data acquisition method, and the filter used in imaging reconstruction. The purpose of this study Is to examine image qualifies of SPECT with different types of low energy collimators. The SPECT imaging system in this study is a digital gamma camera system GCA-901A(Toshiba) and a data processing unit Scintipac-700(Shimadzu). The four types of collimators compared are UHR(ultra high resolution), LEHR(low energy high resolution), LEGP(low energy general purpose), and I-123 PAR(Parallel), with 0.27, 0.66, 1.00, and 2.06 relative sensitivity, respectively. In this case of the same collimators, the spatial resolutions measured in the slice plane showed a slight difference in the FWHM values(mean values of UHR, LEHR, LEGP, and I-123 PAR were 11.3 mm, 13.6 mm, 15.8 mm, and 20.4 mm, respectively) between the center and the circumference of the field of view, in the radial direction, but a large difference in the tangential direction, with lower FWHM values(values of UHR, LEHR, LEGP, and I-123 PAR were 8.4 mm, 8.7 mm, 9.3 mm, and 10.8 mm at 12 cm from the center, respectively). In comparison of SPECT images with the four types of collimators, except for the I-123 PAR collimator, image qualities of UHR, LEHR, and LEGP collimators showed only a slight difference. From the point of for, it is expected that the LEGP collimator would be suitable for SPECT imaging with $^{99m}Tc$.

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Optimization of the deposition condition on hetero-epitaxial As-doped ZnO thin films by pulsed laser deposition (PLD를 이용한 hetero-epitaxial As-doped ZnO 박막 증착 조건의 최적화)

  • Lee, Hong-Chan;Jung, Youn-Sik;Choi, Won-Kook;Park, Hun;Shim, Kwang-Bo;Oh, Young-Jei
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.207-210
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    • 2005
  • In order to investigate the influence of the homo buffer layer on the microstructure of the ZnO thin film, undoped ZnO buffer layer were deposited on sapphire (0001) substrates by ultra high vaccum pulsed laser deposition (UHV-PLD) and molecular beam eiptaxy (MBE). After high temperature annealing at $600^{\circ}C$ for 30min, undoped ZnO buffer layer was deposited with various oxygen pressure (35~350mtorr). On the grown layer of undoped ZnO, Arsenic-doped(l, 3wt%) ZnO layers were deposited by UHV-PLD. The optical property of the ZnO was analyzed by the photoluminescence (PL) measurement. From $\Theta-2\Theta$ XRD analysis, all the films showed strong (0002) diffraction peak, and this indicates that the grains grew uniformly with the c-axis perpendicular to the substrate surface. Field emission scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO were varied with oxygen pressure, arsenic doping level, and the deposition method of undoped ZnO buffer layers. The films became denser and smoother in the cases of introducing MBE-buffer layer and lower oxygen pressure during As-doped ZnO deposition. Higher As-doping concentration enhanced the columnar-character of the films.

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The effect of thermal anneal on luminescence and photovoltaic characteristics of B doped silicon-rich silicon-nitride thin films on n-type Si substrate

  • Seo, Se-Young;Kim, In-Yong;Hong, Seung-Hui;Kim, Kyung-Joong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.141-141
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    • 2010
  • The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

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Memory Effect of $In_2O_3$ Quantum Dots and Graphene in $SiO_2$ thin Film

  • Lee, Dong Uk;Sim, Seong Min;So, Joon Sub;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.240.2-240.2
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    • 2013
  • The device scale of flash memory was confronted with quantum mechanical limitation. The next generation memory device will be required a break-through for the device scaling problem. Especially, graphene is one of important materials to overcome scaling and operation problem for the memory device, because ofthe high carrier mobility, the mechanicalflexibility, the one atomic layer thick and versatile chemistry. We demonstrate the hybrid memory consisted with the metal-oxide quantum dots and the mono-layered graphene which was transferred to $SiO_2$ (5 nm)/Si substrate. The 5-nm thick secondary $SiO_2$ layer was deposited on the mono-layered graphene by using ultra-high vacuum sputtering system which base pressure is about $1{\times}10^{-10}$ Torr. The $In_2O_3$ quantum dots were distributed on the secondary $SiO_2$2 layer after chemical reaction between deposited In layer and polyamic acid layer through soft baking at $125^{\circ}C$ for 30 min and curing process at $400^{\circ}C$ for 1 hr by using the furnace in $N_2$ ambient. The memory devices with the $In_2O_3$ quantum dots on graphene monolayer between $SiO_2$ thin films have demonstrated and evaluated for the application of next generation nonvolatile memory device. We will discuss the electrical properties to understating memory effect related with quantum mechanical transport between the $In_2O_3$ quantum dots and the Fermi level of graphene layer.

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