• 한국레이저가공학회지
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• 제15권1호
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• pp.20-22
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• 2012

This papers show new technology of thin disk type resonator lasers which are well kwon technology by TRUMPF.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.569-572
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• 2005

Technological feasibility of using recently-available femtosecond ultra short pulse lasers for advanced precision length metrology is investigated with emphasis on absolute distance measurements with $10{\mu}m$ ??resolution over extensive ranges. The idea of using femtosecond lasers for the measurement of absolute distances is based on the fact that a short pulse train is a mode-locked combination of discrete monochromatic light components spanning a wide spectral bandwidth. The synthetic wavelength is created from the repetition frequency, $f_r$ of the femtosecond laser and for more precise resolution, higher-order harmonics of the repetition frequency may be selected as the synthetic wavelength by using appropriate electronic filters.

• Journal of Mechanical Science and Technology
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• 제19권6호
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• pp.1378-1389
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• 2005

This work provides the fundamental knowledge of energy transport characteristics during very short-pulse laser heating of semiconductors from a microscopic viewpoint. Based on the self-consistent hydrodynamic equations, in-situ interactions between carriers, optical phonons, and acoustic phonons are simulated to figure out energy transport mechanism during ultrafast pulse laser heating of a silicon substrate through the detailed information on the time and spatial evolutions of each temperature for carriers, longitudinal optical (LO) phonons, acoustic phonons. It is found that nonequilibrium between LO phonons and acoustic phonons should be considered for ultrafast pulse laser heating problem, two-peak structures become apparently present for the subpicosecond pulses because of the Auger heating. A substantial increase in carrier temperature is observed for lasers with a few picosecond pulse duration, whereas the temperature rise of acoustic and phonon temperatures is relatively small with decreasing laser pulse widths. A slight lagging behavior is observed due to the differences in relaxation times and heat capacities between two different phonons. Moreover, the laser fluence has a significant effect on the decaying rate of the Auger recombination.

• 한국정밀공학회지
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• 제27권6호
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• pp.7-16
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• 2010

Physical fundamentals of ultrashort femtosecond lasers are addressed along with emerging applications for precision manufacturing and metrology. Femtosecond lasers emit short pulses whose temporal width is in the range of less than a picosecond to a few femtoseconds, thereby enabling extremely high peak-power machining with less thermal damages. Besides, the broad spectral bandwidth of femtosecond lasers constructed in the form of frequency comb permits absolute distance measurements leading to ultraprecision positioning control and dimensional metrology.

• Journal of Mechanical Science and Technology
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• 제20권8호
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• pp.1292-1301
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• 2006

This article investigates numerically the carrier-phonon interactions in thin gallium arsenide (GaAs) film structures irradiated by subpicosecond laser pulses to figure out the role of several recombination processes on the energy transport during laser pulses and to examine the effects of laser fluences and pulses on non-equilibrium energy transfer characteristics in thin film structures. The self-consistent hydrodynamic equations derived from the Boltzmann transport equations are established for carriers and two different types of phonons, i.e., acoustic phonons and longitudinal optical (LO) phonons. From the results, it is found that the two-peak structure of carrier temperatures depends mainly on the pulse durations, laser fluences, and nonradiative recombination processes, two different phonons are in nonequilibrium state within such lagging times, and this lagging effect can be neglected for longer pulses. Finally, at the initial stage of laser irradiation, SRH recombination rates increases sufficiently because the abrupt increase in carrier number density no longer permits Auger recombination to be activated. For thin GaAs film structures, it is thus seen that Auger recombination is negligible even at high temperature during laser irradiation.