• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.339-341
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• 2004

We obtained ultra-short single pulse with an energy of 80 of from self Q-switched Distributed Feedback Dye Laser. Using three stages of amplifiers constructed by two stages of dye amplifiers and one bethune cell amplifier, we obtained high power pulse and second harmonic generation with BBO in ultraviolet region.

• Korean Journal of Optics and Photonics
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• v.10 no.6
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• pp.512-517
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• 1999

Quenched dye laser (QDL), which operates with relaxation oscillation mode, is one of the most powerful source for ultra-short pulse light. In this paper, the output characteristics of QDL is theoretically analyzed by a computer simulation. The QDL is assumed that the laser dye is Rhodamine 6G which has the oscillation wavelength of 590 nrn and that the active length is 5 mm and that the pumping source is XeCllaser which has oscillation wavelength of 308 nm. It is revealed ilim the pulse width of short cavity dye laser reduced less than 1/100 than pumping pulse duration and has the linear relationship with spatial width of pumping beam approximately. In addition, it is revealed that the short cavity dye laser is a powerful candidate of pulse width variable light source, which is adjusted by spatial size of pumping beam_ beam_

• Laser Solutions
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• v.15 no.1
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• pp.20-22
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• 2012

This papers show new technology of thin disk type resonator lasers which are well kwon technology by TRUMPF.

• Journal of Welding and Joining
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• v.26 no.4
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• pp.38-40
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• 2008

• 전기의세계
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• v.29 no.5
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• pp.321-328
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• 1980

The Q-switching oscillator of TE $M_{00}$ mode was constructed in order to improve the properties of energy focusing and amplification, and prevent laser materials from breakdown. The Q-switching was done by means of electro-optical effect using Glan prism and KDP Pockels cell. Sharp laser pulse of risetime-1 ns and variable pulse width 2-10 ns was obtained from Q-switching laser pulse by PTM method using a laser triggered spark gap (LTSG), Glan prism and Pockels cell. A single ultra-short pulse (picosec order in pulse width) was obtained from mode-locked pulse train in combination of a mode-locked oscillator using saturable dye cell with pulse shaping system using PTM method.d.

• Korean Journal of Optics and Photonics
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• v.15 no.5
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• pp.455-460
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• 2004

We have developed a mode-locked ultra-short pulse C $r^{4+}$:YAG laser, as well as a continuous wave C $r^{4+}$:YAG laser. The laser was pumped by a Nd:YAG laser and its characteristics were investigated. In continuous wave mode, we obtained as much as 600 mW at 1.436 ${\mu}{\textrm}{m}$ with pumping power of 6 W, by using an output coupler with a reflectivity of 98%. The power slope efficiency was 10%, when the gain medium was cooled to 19$^{\circ}C$. The tuning range was varied from 1.39 ${\mu}{\textrm}{m}$ to 1.55 ${\mu}{\textrm}{m}$ and the maximum power was 400 mW at 1.492 ${\mu}{\textrm}{m}$ with a 3-plate birefringent filter. The C $r^{4+}$:YAG laser was mode-locked by a Kerr lens mode locking method. Mode locking at 1.436 ${\mu}{\textrm}{m}$was initiated by slightly rocking a mirror mount. But the pulses were very unstable because of the strong water absorption at this region. So we shifted the lasing wavelength to 1.492 ${\mu}{\textrm}{m}$ by using a 3-plate birefringent filter. Then we obtained stable state mode-locking with the maximum average power of 280 mW for a pumping power of 6 W. The pulse width of 43 fs was measured using an autocorrelator and the repetition rate was 104.5 MHz.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.569-572
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• 2005

Technological feasibility of using recently-available femtosecond ultra short pulse lasers for advanced precision length metrology is investigated with emphasis on absolute distance measurements with $10{\mu}m$ ??resolution over extensive ranges. The idea of using femtosecond lasers for the measurement of absolute distances is based on the fact that a short pulse train is a mode-locked combination of discrete monochromatic light components spanning a wide spectral bandwidth. The synthetic wavelength is created from the repetition frequency, $f_r$ of the femtosecond laser and for more precise resolution, higher-order harmonics of the repetition frequency may be selected as the synthetic wavelength by using appropriate electronic filters.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.149-150
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• 2006

We describe a novel method of scanning probe nanofabrication using a AFM(atomic force microscopy) tip with assistance of Femtosecond laser pulses to enhance fabrication capability. Illumination of the AFM tip with ultra-short light pulses induces a strong electric field between the tip and the metal surface, which allows removing metal atoms from the surface by means of field evaporation. Quantum simulation reveals that the field evaporation is triggered even en air when the induced electric field reaches the level of a few volts per angstrom, which is low enough to avoid unwanted thermal damages on most metal surfaces. For experimental validation, a Ti: sapphire Femtosecond pulse laser with 10 fs pulse duration at 800 nm center wavelength was used with a tip coated with gold to fabricate nanostructures on a thin film gold surface. Experimental results demonstrate that fine structures with critical dimensions less than ${\sim}10nm$ can be successfully made with precise control of the repetition rate of Femtosecond laser pulses.

• Journal of Mechanical Science and Technology
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• v.20 no.8
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• pp.1292-1301
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• 2006

This article investigates numerically the carrier-phonon interactions in thin gallium arsenide (GaAs) film structures irradiated by subpicosecond laser pulses to figure out the role of several recombination processes on the energy transport during laser pulses and to examine the effects of laser fluences and pulses on non-equilibrium energy transfer characteristics in thin film structures. The self-consistent hydrodynamic equations derived from the Boltzmann transport equations are established for carriers and two different types of phonons, i.e., acoustic phonons and longitudinal optical (LO) phonons. From the results, it is found that the two-peak structure of carrier temperatures depends mainly on the pulse durations, laser fluences, and nonradiative recombination processes, two different phonons are in nonequilibrium state within such lagging times, and this lagging effect can be neglected for longer pulses. Finally, at the initial stage of laser irradiation, SRH recombination rates increases sufficiently because the abrupt increase in carrier number density no longer permits Auger recombination to be activated. For thin GaAs film structures, it is thus seen that Auger recombination is negligible even at high temperature during laser irradiation.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.9
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• pp.931-942
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• 2013

In this study, we analyzed and compared the ultrasonic welding with the laser welding for the pure aluminium thin plates in a series of secondary lithium-ion batteries which are currently being produced by the ultrasonic welding; and performed the experiment for the purpose of the preceding study to replace the ultrasonic welding method with the laser welding method. As a result, the weld width of ultrasonic welding was 5mm, but that of laser welding was about 1~1.5 mm. As a result of tension test, the tensile strength was high when the pulse duration hour was short at the low peak power, while the high tensile strength was achieved when the pulse duration hour was long at the high peak power. The value of tensile strength was higher in the ultrasonic welding while the laser welding showed a maximum 45% better result as for the welding width.