• 제목/요약/키워드: UV lamp

검색결과 276건 처리시간 0.024초

Development of a Photoemission-assisted Plasma-enhanced CVD Process and Its Application to Synthesis of Carbon Thin Films: Diamond, Graphite, Graphene and Diamond-like Carbon

  • Takakuwa, Yuji
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.105-105
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    • 2012
  • We have developed a photoemission-assisted plasma-enhanced chemical vapor deposition (PAPE-CVD) [1,2], in which photoelectrons emitting from the substrate surface irradiated with UV light ($h{\nu}$=7.2 eV) from a Xe excimer lamp are utilized as a trigger for generating DC discharge plasma as depicted in Fig. 1. As a result, photoemission-assisted plasma can appear just above the substrate surface with a limited interval between the substrate and the electrode (~10 mm), enabling us to suppress effectively the unintended deposition of soot on the chamber walls, to increase the deposition rate, and to decrease drastically the electric power consumption. In case of the deposition of DLC gate insulator films for the top-gate graphene channel FET, plasma discharge power is reduced down to as low as 0.01W, giving rise to decrease significantly the plasma-induced damage on the graphene channel [3]. In addition, DLC thickness can be precisely controlled in an atomic scale and dielectric constant is also changed from low ${\kappa}$ for the passivation layer to high ${\kappa}$ for the gate insulator. On the other hand, negative electron affinity (NEA) of a hydrogen-terminated diamond surface is attractive and of practical importance for PAPECVD, because the diamond surface under PAPE-CVD with H2-diluted (about 1%) CH4 gas is exposed to a lot of hydrogen radicals and therefore can perform as a high-efficiency electron emitter due to NEA. In fact, we observed a large change of discharge current between with and without hydrogen termination. It is noted that photoelectrons are emitted from the SiO2 (350 nm)/Si interface with 7.2-eV UV light, making it possible to grow few-layer graphene on the thick SiO2 surface with no transition layer of amorphous carbon by means of PAPE-CVD without any metal catalyst.

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극세섬유와 광촉매를 이용한 포름알데히드의 광분해 특성 (Photodecomposition Properties of Formaldehyde Using PS Nanofiber and Photocatalyst)

  • 안형환
    • 한국가스학회지
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    • 제10권2호
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    • pp.1-6
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    • 2006
  • 본 연구에서는 실내 오염물질인 포름알데히드가스를 제거하기위하여 $Pd/TiO_2$로 코팅한 극세 섬유에 광분해 효과를 제안하였다 광촉매 반응기는 사각박스(부피 2 l)내에 UV램프와 $Pd/TiO_2$로 코팅한 극세 섬유와 함께 장착하였다. 이 때 Langmuir-Heinshelwood의 반응속도와 흡착상수, 온도 및 농도 변화에 따른 전환을 그리고 습도변화와 오염가스($SO_2$) 혼합으로 인한 전환율의 영향을 조사하였다. 결과로서 속도상수(k)와 흡착상수($\beta$) 각각 114.94 ppmv/min, $0.0036ppmv^{-1}$을 얻었다. 또한 온도증가($40^{\circ}C{\sim}80^{\circ}C$)에 따른 포름알데히드가스 전환율이 약 20%로 감소하고 습도변화에 따른 전환율에서는 습도가 증가할수록 감소하는 경향을 보였다. 이외에 $SO_2$가스 혼입되어 있는 상태에서 전환율은 $SO_2$ 가스가 수분에 의한 이온의 영향으로 방해인자로 작용하는 것을 알 수 있었다.

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플라즈마 발생용 전원장치의 LCD 패널 세정효과에 관한 연구 (A Study of LCD Panel Cleaning Effect of Plasma Generation Power Source)

  • 김규식
    • 전자공학회논문지SC
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    • 제45권5호
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    • pp.44-51
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    • 2008
  • UV 램프 시스템은 오랫동안 TFT LCD 나 PDP 의 패널 세정에 사용되어 왔으나, 저렴한 가격의 고성능 세정에 대한 필요성 때문에 고전압 플라즈마 세정에 대한 기술이 개발되고 그 성능이 향상되어 왔다. 장벽방전 (barrier discharge) 혹은 무성방전 (silent discharge)으로 불리는 유전체 장벽 방전 (Dielectric-Barrier Discharges, DBDs) 는 오존 발생기에 주로 이용되어 왔다. 본 논문에서는 LCD 세정용으로 6kW 급 고전압 플라즈마 발생장치를 구현하였다. 3상 입력전압을 직류로 정류한 뒤, 인버터 시스템에 의해 고주파 펄스로 바꾸고 고압 트랜스퍼머를 거쳐 다이오드로 정류한다. 마지막으로, 고압 플라즈마를 발생시키기 위해 양방향 고전압 펄스 스위칭회로가 사용되었다. 실험을 통해 상압 플라즈마가 LCD 패널 세정에 크게 유용함을 보였다.

Application of Light-emitting-diodes to Annular-type Photocatalytic Reactor for Removal of Indoor-level Benzene and Toluene

  • Jo, Wan-Kuen;Kang, Hyun-Jung;Kim, Kun-Hwan
    • 한국환경과학회지
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    • 제21권5호
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    • pp.563-572
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    • 2012
  • Unlike water applications, the photocatalytic technique utilizing light-emitting-diodes as an alternative light source to conventional lamp has rarely been applied for low-level indoor air purification. Accordingly, this study investigated the applicability of UV-LED to annular-type photocatalytic reactor for removal of indoor-level benzene and toluene at a low concentration range associated with indoor air quality issues. The characteristics of photocatalyst was determined using an X-ray diffraction meter and a scanning electron microscope. The photocatalyst baked at $350^{\circ}C$ exhibited the highest photocatalytic degradation efficiencies(PDEs) for both benzene and toluene, and the photocatalysts baked at three higher temperatures(450, 550, and $650^{\circ}C$) did similar PDEs for these compounds. The average PDEs over a 3-h period were 81% for benzene and close to 100% for toluene regarding the photocatalyst baked at $350^{\circ}C$, whereas they were 61 and 74% for benzene and toluene, respectively, regarding the photocatalyst baked at $650^{\circ}C$. As the light intensity increased from 2.4 to 3.5 MW $cm^{-1}$, the average PDE increased from 36 to 81% and from 44% to close to 100% for benzene and toluene, respectively. In addition, as the flow rate increased from 0.1 to 0.5 L $min^{-1}$, the average PDE decreased from 81% to close to zero and from close to 100% to 7% for benzene and toluene, respectively. It was found that the annular-type photocatalytic reactor inner-inserted with UV-LEDs can effectively be applied for the decomposition of low-level benzene and toluene under the operational conditions used in this study.

Tio2 나노튜브의 열처리 온도에 따른 Anatase 상의 분포와 그에 따른 광 촉매 효율 (Distribution of Anatase Phase Depending on the Thermal Treatment Temperature of Tio2 Nanotubes and Its Effects on the Photocatalytic Efficiency)

  • 김세임;황지훈;이승욱;김락경;손수민;;양준모;양비룡
    • 한국세라믹학회지
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    • 제45권6호
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    • pp.331-335
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    • 2008
  • The purpose of this study is to characterize the photo-catalytic efficiency of $TiO_2$ nanotube with respect to the distribution of anatase phase which can be changed by the annealing temperature of $TiO_2$ nanotube. $TiO_2$ nanotube was fabricated by the anodization method in the 0.5 wt% HF electrolyte. And then the $TiO_2$ nanotube was annealed at temperatures ranging from $380^{\circ}C$ to $780^{\circ}C$ in dry oxygen ambient for 2 h. For the photo-catalytic water-splitting tests, the photocurrent density was measured as a function of applied potential with a potentiostat using a Ag/AgCl reference, Pt counter electrode, and 1 M KOH electrolyte under illumination of UV by a Xe arc lamp of 1 KW. According to the UV photo-catalytic water-splitting tests, the nanotube annealed at $560^{\circ}C$ was found to show the highest photocurrent density.

$Er^{3+}$를 첨가한 $CaZrO_3$ 축광성 형광체의 합성 및 발광 특성 분석 (Synthesis and luminescent properties of $Er^{3+}$ doped $CaZrO_3$ long persistent phosphors)

  • 박병석;최종건
    • 한국결정성장학회지
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    • 제18권1호
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    • pp.27-32
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    • 2008
  • 새로운 $CaZrO_3:Er^{3+}$ 축광성 형광체를 전통적인 고상반응법으로 제조하였으며, 분쇄한 축광성 형광체를 X 선 회절 분석, 광발광 분석, 열발광 분석과 휘도계를 통하여 장잔광 특성을 분석하였다. X 선 회절 분석 결과 순수한 $CaZrO_3$ 결정상을 확인 하였으며, 고온의 질소 분위기에서 합성한 경우 446 nm 와 550 nm의 넓은 발광 피크가 나타났다. 합성한 장잔광 특성의 형광체의 발광 지속시간은 254 nm UV lamp로 여기 시킨 후 어두운 곳에서 6시간 이상 스스로 발광 하였다. 발광 피크는 $Er^{3+}$ 이온의 $^5D_{5/2}{\rightarrow}^4F_{9/2},\;^2H_{12/2},\;^4S_{3/2}{\rightarrow}^4I_{13/2}$ 그리고 $^2G_{9/2}{\rightarrow}^4I_{13/2}$ 전이에 의한 것이며, 잔광 특성은 $CaZrO_3$ 격자 내에 적당한 trap center가 형성 된 것으로 판단된다.

ZnO 나노입자의 광전류 특성 (Photocurrent Characteristics of ZnO Nanoparticles)

  • 전진형;성호준;조경아;김상식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.207-207
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    • 2008
  • ZnO is one of the widely utilized n-type semiconducting oxide materials in the field of optoelectronic devices. For its application to the fabrication of promising ultraviolet (UV) photodetectors, ZnO with various structures has been extensively studied. However, study on the photodetectors using zero-dimensional (0-D) ZnO nanoparticle is scarce while the 0-D nanoparticle structure has many advantages compared to the other dimensional structures for absorption of light. In this study, the photocurrent characteristics of ZnO nanoparticles were investigated through a simply pasting of the nanoparticles across the pre-patterned electrodes. Then the photoluminescence (PL) characteristic, photocurrent response spectrum, photo- and dark-current and photoresponse spectrum were investigated with a He-Cd laser and an Xe lamp. An dominant PL peak of the ZnO nanoparticles was located at the wavelength of 380 nm under the illumination of 325-nm wavelength light. The ratio of photocurrent to dark current (on/off ratio) is as high as 106 which is considerable value for promising photodetectors. On the other hand, the time constants in photoresponse were relatively slow. The reasons of the high on/off ratio and relatively slow photoresponse characteristic will be discussed.

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광증감제에 의한 Acrylonitrile의 광중합 속도 (I) (Kinetics of Pholopolymerization of Acrylonitrile Using Sensitizer)

  • 설수덕
    • Elastomers and Composites
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    • 제34권1호
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    • pp.3-10
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    • 1999
  • 아크릴로니트릴(AN) 단일중합체를 항온장치가 부착된 광중합반응기내에서 합성하여 최적반응조건하에서 중합속도모델식을 구하였다. AN의 농도($1.8{\sim}7.58mo1/1$), 증감제의 종류($NaSCN,\;KSCN,\;Ba(SCN)_2,\;NH_4SCN,\;ZnCl_2,\;Na_2SeO_3$) 및 농도($10{\sim}60%$), 반응온도($10{\sim}70^{\circ}C$), 에너지 세기($1,000{\sim}9,900{\mu}J/cm^2$)를 변화시켰다. 광증감제의 농도에 관계없이 반응온도 $50^{\circ}C$, 반응시간 3시간에서 균일한 분자량분포를 얻고, 이중 광증감제로 50%의 NaSCN의 경우 다음과 같은 중합속도 모델식을 구하였다. $R_p=0.0142[M]^{0.82}[I]^{0.49}[S]^{0.52}$ exp(-1.33/RT).

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Saccharomyces cerevisiae D-71과 Zygosaccharomyces rouxii SR-S로부터 조제한 원형질체의 안정성 (Stability of Spheroplasts from Saccharomyces cerevisiae D-71 and Zygosaccharomyces rouxii SR-S)

  • 정창기;김찬조;이종수
    • 한국미생물·생명공학회지
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    • 제16권4호
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    • pp.293-296
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    • 1988
  • 고온발효성인 Sacch. cerevisiae D-71과 내삼투압 성인 Zygosacch. rouxii SR-S의 원형질체를 조제하고 분리하여 그의 안정성을 검토하였다. Sacch. cerevisiae D-71의 원형질체는 0.8M KCI 과 1.0M sorbitol에서, Zygosacch. rouxii SR-S의 원형질체는 0.4M KCI과 mannitol에서 가장 안정하였고 두 효모의 원형질체들을 20Kc로 60초간 초음파 처리하였을 때 90% 이상이 파괴되었다. 또한 10000$\times$g로 10분간 처리하였을 때 Sacch. cerevisiae D-71의 원형질체는 93%, Zygosacch. rouxii SR-S의 원형질체는 84%의 안정성을 보였고 이들 원형질체들을 15W의 자외선 등으로 20cm에서 60분간 처리하였을 때 Sacch. cerevisiae의 원형질체는 99%, Zygosacch. rouxii SR-S의 원형질체는 55%가 파괴되었다.

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제조사업장 식당 종사자의 홍반 등 건강장해 원인 규명 및 예방 방안 (Identification of Causes and Prevention Measures for Health Disorders Such as Erythema of Restaurant Workers in Manufacturing Company)

  • 정지연;이광용;박승현
    • 한국산업보건학회지
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    • 제34권3호
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    • pp.238-246
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    • 2024
  • Objectives: A collective of workers in the company's cafeteria encountered symptoms such as stinging and watering in and around the eyes, a sensation of sand in the eyes, erythema, swelling, and peeling of the skin on the face and neck. The objective of this study is to pinpoint the causes of these symptoms and propose preventive measures. Methods: Following preliminary on-site investigations, worker interviews, and literature research, it was determined that the most probable cause of the symptoms was ultraviolet rays emitted from a UV sterilizer. Consequently, the study measured and assessed the effective amount of ultraviolet radiation emitted by the sterilizer. Results: When operating with the curtain-type door of the ultraviolet sterilizer open, it was observed to surpass the 0.1 μW/cm2 8-hour work exposure standard recommended by ACGIH TLV in most kitchen workspaces. The evaluation of the maximum allowable exposure time based on the distance from the ultraviolet sterilizer indicated only 4.2 seconds at a distance of 0.2 m with the curtain door open, and merely 1.7 minutes at a distance of 1 m. Conclusions: This study confirmed that the symptoms among restaurant workers emerged immediately after the installation of the ultraviolet sterilizer, and these symptoms were consistent with those associated with exposure to ultraviolet rays. Furthermore, the assessment revealed that the exposure level to ultraviolet rays could be exceeded established exposure standards. It was recommended that the existing ultraviolet sterilizer be replaced with one featuring a glass door, and facility improvements should be made, such as implementing an automatic mechanism to turn off the ultraviolet lamp when the door is opened.