• 한국인쇄학회지
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• 제29권3호
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• pp.17-30
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• 2011

The polarizer is an important optical element used in a variety of applications. Nano-wire grid polarizers in the form of sub-wavelength metallic gratings are an attractive alternative to conventional polarizers, because they provide high extinction ratio. This study has been carried out to fabrication of the 17inch area size nano-wire grid polarizer(NWGP) The master for NWGPs with a pitch of 200nm and the area size $730mm{\times}450mm$ were fabricated using laser interference lithography and aluminum sputtering and wet etching. And The NWGP fabrication process was using by the Roll to-Roll UV imprinting and was applied to flexible PET film. The results were a transmission of light (Tp) 46.7%, reflectance (Rs) 40.1% and Extinction ratio of above 16 for the visible light range.

• 한국의류학회지
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• 제29권3_4호
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• pp.561-568
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• 2005

The irradiation of Ultra-Violet (UV) is an efficient treatment for polymer to improve hydrophilic properties. 4-Channel PET knit fabrics were treated with UVA and UVC to develop functional and environment-friendly fabric. The fabric was treated with various treatment times and distances from UV lamps having different wavelength. FT-IR and XPS investigated the chemical changes. To confirm the change of surface properties, contact angle, surface energy and SEM were examined. The study of UV as a treatment for PET knit fabric shows significant changes in chemical and surface properties, which is proved by analyses. FT-IR and XPS analyses prove the augmentation of carboxylic, Hydrophilic groups on the surfaces treated by UV. The increase of water contact angle and surface energy means more water wettable and surface energy of PET film was substantially increased by UV irradiation time. The ageing after surface treatment had little influence on the surface energy of the irradiated PET film. SEM proves the surface modification of PET such as etching, bubble and crack. The negative effects are increased in accordance with increasing treatment time.

• 복식문화연구
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• 제11권1호
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• pp.66-74
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• 2003

This study is to improve the worst lightfastness of a natural dye. To modify the fiber surface, low temperature oxygen plasma was carried out on silk fabric. The result is followed below after the examination of surface shape, dyeability, color change, UV absorbent influence and lightfastness. 1. When electric discharge outputs are 60W, 80W and 100w, and processing times are 10minutes, 20minutes and 40minutes, the etching effect of surface increased as electric discharge outputs and processing times increased. 2. When examined UV absorbent for 5hours, 10hours, 20hours, 40hours and 80hours, the value changes of E are 1.47, 2.51, 2.91, 3.71, 4.51 and 5.31 in case of Al pre-mordanting/ prasma 80W, 20min./ UVabsorbent 5% (100:1), 2.31, 2.47, 3.84, 3.90, 3.61 and 4.42 in case of Al pre-mordanting/prasma 80W, 20min.1 UV absorbent 5% (o.w.f.). The lightfastness decreased when UV absorbent increased. 3. Dyeability of the samples pre-treated with five different methods was in the following order: plasma processing for 20minutes at 60W/Al pre-mordanting > Al pre-mordanting > plasma processing for 20minutes at 60W > Al after-mordanting. non mordanting Plasma treatment had superior effect on dyeability. 4. When UV absorbent was applied in fabric, the sample under higher electric discharge out puts showed more effective in improving lightfastness.

• 한국재료학회지
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• 제6권11호
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• pp.1127-1135
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• 1996

반도체 소자가 고집적화 됨에 따라 단위공정의 수가 증가하게 되었고 동시에 실리콘 기판의 오염에 대한 문제가 증가하였다. 실리콘 기판의 주 오염물로는 유기물, 파티클, 금속분순물 등이 있으며 특히, Cu와 Fe과 같은 금속불순물은 이온주입 공정, reactive ion etching, photoresist ashing과 같은 실 공정 중에 1011-1013atoms/㎤정도로 오염이 되고 있다. 그러나 금속불순물 중 Cu와 같은 전기음성도가 실리콘 보다 큰 오염물질은 일반적인 습석세정방법으로는 제거하기 힘들다. 따라서 본 연구에서는 Cu와 Fe과 같은 금속불순물을 제거할 목적을 건식과 습식 세정방법을 혼합한 UV/ozone과 HF세정을 제안하여 실시하였다. CuCI2와 FeCI2 표준용액으로 실리콘 기판을 인위적 오염한 후 split 1(HF-only), split 2 (UV/ozone+HF), split 3 (UV/ozone + HF 2번 반복), split 4(UV/ozone-HF 3번 반복)를 실시하였고 TXRF(Total Reflection X-Ray Fluorescence)와 AFM(Atomic Force Microscope)으로 금속불순물 제거량과 표면거칠기를 각각 측정하였다. 또한 contact angle 측정으로 세정에 따른 표면상태도 측정하였다. TXRF 측정결과 split 4가 가장 적은 양의 금속불순물 잔류량을 보였으며 AFM 분석을 통한 표면거칠기도 가장 작은 RMS 값을 나타내었다. Contact angle 측정 결과 UV/ozone 처리는 친수성 표면을 형성하였고 HF처리는 소수성 표면을 형성하였다.

• 마이크로전자및패키징학회지
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• 제12권4호통권37호
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• pp.275-280
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• 2005

나노 임프린트 (NIL)와 포토 리소그라피를 접목시킨 combined nanoimprint and photolithography (CNP) 기술을 이용하여 나노 미세 패턴을 형성하였다. 일반적인 UV-NIL 스탬프의 양각 패턴 위에 Cr 금속막을 입힌 hybrid mask mold (HMM)을 E-beam writing과 plasma etching으로 제작하였다. HMM 전면에는 친수성 물질인 $SiO_2$를 코팅하여 점착방지막 역할의 self-assembled monolayer(SAM) 형성을 용이하게 함으로써 HMM과 transfer layer의 분리를 용이하게 하여 패턴 손상을 억제하였다. 또한, transfer layer에는 일반적인 monomer resin 대신에 건식 에칭에 대한 저항력이 높은 negative PR을 사용하였다. Photo-mask 역할을 하는 HMM의 Cr 금속막이 UV를 차단하여 잔류하게 되는 PR의 비경화층(unexpected residual layer)은 간단한 현상 공정으로 제거하여 PR 잔류층이 없는 나노 미세 패턴을 transfer layer에 형성하였다.

• 소성∙가공
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• 제18권4호
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• pp.310-316
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• 2009

Micro lens array(MLA) is widely used in information technology(IT) industry fields for various applications such as a projection display, an optical power regulator, a micro mass spectrometer and for medical appliances. Recently, MLA have been fabricated and developed by using a reflow method having the processes of micro etching, electroplating, micro machining and laser local heating. Laser thermal relaxation method is introduced in marking of microdots on the surface of densified glass. In this paper, we have proposed a new direct fabrication process using UV laser local thermal-expansion(UV-LLTE) and investigated the optimal processing conditions of MLA on the surface of negative photo-resist material. We have also studied the 3D shape of the micro lens obtained by UV laser irradiation and the optimal process conditions. And then, we made chrome mold by electroplating. After that, we made MLA using chrome mold by hot embossing processing. Finally, we have measured the opto-physical properties of micro lens and then have also tested the possibility of MLA applications.

• 한국정밀공학회지
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• 제24권5호
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• pp.97-103
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• 2007

A novel selective metallization process to fabricate the fine conductive line based on inkjet printing has been investigated. Recently, Inkjet printing has been widely used in flat panel display, electronic circuits, biochips and bioMEMS because direct inkjet printing is an alternative and cost-effective technology for patterning and fabricating objects directly from design without masks. The photosensitive etching resist used in this process is an organic polymer which becomes solidified when exposed to ultraviolet lights and has high viscosity at ambient temperature. A piezoelectric-driven inkjet printhead is used to dispense 20-30 ${\mu}m$ diameter droplets onto the copper substrate to prevent subsequent etching. Repeatability of circuitry fabrication is closely related to the formation of steady droplets, adhesion between etching resist and copper substrate. Therefore, the ability to form small and stable droplets and surface topography of the copper surface and chemical attack must be taken into consideration for fine and precise patterns. In this study, factors affecting the pattern formation such as adhesion strength, etching mechanism, UV curing have been investigated. As a result, microscale copper patterns with tens of urn high have been fabricated.

• 정보저장시스템학회논문집
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• 제1권2호
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• pp.182-187
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• 2005

A large area micro mirror is an optical element that functions as changing an optical path by reflection in integrated optical system. We fabricated the large area silicon mirror by anisotropic etching using MEMS for implementation of integrated optical pickup. In this work, we report the optimum conditions to better fabricate and design, greatly improve mirror surface quality. To obtain mirror surface of $45^{\circ},\;9.74^{\circ}$ off-axis silicon wafer from (100) plane was used in etching condition of $80^{\circ}C$ with 40wt.% KOH solution. After wet etching, polishing process by MR fluid was applied to mirror surface for reduction of roughness. In the next step, after polymer coating on the polished Si wafer, the Si mirror was fabricated by UV curing using a trapezoid bar-type way structure. Finally, we obtained peak to valley roughness about 50 nm in large area of $mm^2$ and it is applicable to optical pickup using blu-ray wavelength as well as infrared wavelength.

• 대한금속재료학회지
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• 제46권12호
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• pp.835-840
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• 2008

Texturing for crystalline silicon solar cells is one of the important techniques to increase conversion efficiency by effective photon trapping. Generally, incoming wafers or alkali etched wafers are used for texturing. From this conventional etching process, $7{\sim}10{\mu}m$-sized random pyramids are formed. In this study, acid etching for removal of saw damages was practiced before texturing. This improved the resulting surface morphology, which consisted of $2{\sim}4{\mu}m$-sized pyramids. Because these pyramids covered the surface much more extensively, we obtained reduction of optical losses on the surface. In order to compare with conventional texturing, FE-SEM is used for observing surface morphology and reflectance data is analyzed by UV-VIS spectrophotometer.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권3호
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• pp.199-205
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• 2006

Patterned sapphire substrates (PSS) were fabricated by a simple wet etching process with $SiO_2$ stripe masks and a mixed solution of $H_2SO_4$ and $H_3PO_4$. GaN layers were epitaxially grown on the PSS under the optimized 2-step growth condition of metalorganic vapor deposition. During the 1st growth step, GaN layers with triangular cross sections were grown on the selected area of the surface of the PSS, and in the 2nd growth step, the GaN layers were laterally grown and coalesced with neighboring GaN layers. The density of threading dislocations on the surface of the coalesced GaN layer was $2{\sim}4\;{\times}\;10^7\;cm^{-2}$ over the entire region. The epitaxial structure of near-UV light emitting diode (LED) was grown over the GaN layers on the PSS. The internal quantum efficiency and the extraction efficiency of the LED structure grown on the PSS were remarkably increased when compared to the conventional LED structure grown on the flat sapphire substrate. The reduction in TD density and the decrease in the number of times of total internal reflections of the light flux are mainly attributed due to high level of scattering on the PSS.