• Environmental Engineering Research
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• v.17 no.4
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• pp.179-184
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• 2012

The light absorbance of photocatalysts and reaction kinetics of environmental pollutants at the liquid-solid and gas-solid interfaces differ from each other. Nevertheless, many previous photocatalytic studies have applied the science to aqueopus applications without due consideration of the environment. As such, this work reports the surface and morphological characteristics and photocatalytic activities of carbon-embedded (C-$TiO_2$) photocatalysts for control of gas-phase methyl tertiary-butyl ether (MTBE) under a range of different operational conditions. The C-$TiO_2$ photocatalysts were prepared by oxidizing titanium carbide powders at $350^{\circ}C$. The characteristics of the C-$TiO_2$ photocatalysts, along with pure TiC and the reference pure $TiO_2$, were then determined by X-ray diffraction, scanning emission microscope, diffuse reflectance ultraviolet-visible-near infrared (UV-VIS-NIR), and Fourier transform infrared spectroscopy. The C-$TiO_2$ powders showed a clear shift in the absorbance spectrum towards the visible region, which indicated that the C-$TiO_2$ photocatalyst could be activated effectively by visible-light irradiation. The MTBE decomposition efficiency depended on operational parameters, including the air flow rate (AFR), input concentration (IC), and relative humidity (RH). As the AFRs decreased from 1.5 to 0.1 L/min, the average efficiencies for MTBE increased from 11% to 77%. The average decomposition efficiencies for the ICs of 0.1, 0.5, 1.0, and 2.0 ppm were 77%, 77%, 54%, and 38%, respectively. In addition, the decomposition efficiencies for RHs of 20%, 45%, 70%, and 95% were 92%, 76%, 50%, and 32%, respectively. These findings indicate that the prepared photocatalysts could be effectively applied to control airborne MTBE if their operational conditions were optimized.

• The Korean Journal of Physiology and Pharmacology
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• v.19 no.4
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• pp.373-382
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• 2015

Fura-2 analogs are ratiometric fluoroprobes that are widely used for the quantitative measurement of [$Ca^{2+}$]. However, the dye usage is intrinsically limited, as the dyes require ultraviolet (UV) excitation, which can also generate great interference, mainly from nicotinamide adenine dinucleotide (NADH) autofluorescence. Specifically, this limitation causes serious problems for the quantitative measurement of mitochondrial [$Ca^{2+}$], as no available ratiometric dyes are excited in the visible range. Thus, NADH interference cannot be avoided during quantitative measurement of [$Ca^{2+}$] because the majority of NADH is located in the mitochondria. The emission intensity ratio of two different excitation wavelengths must be constant when the fluorescent dye concentration is the same. In accordance with this principle, we developed a novel online method that corrected NADH and Fura-2-FF interference. We simultaneously measured multiple parameters, including NADH, [$Ca^{2+}$], and pH/mitochondrial membrane potential; Fura-2-FF for mitochondrial [$Ca^{2+}$] and TMRE for ${\Psi}_m$ or carboxy-SNARF-1 for pH were used. With this novel method, we found that the resting mitochondrial [$Ca^{2+}$] concentration was $1.03{\mu}M$. This $1{\mu}M$ cytosolic $Ca^{2+}$ could theoretically increase to more than 100 mM in mitochondria. However, the mitochondrial [$Ca^{2+}$] increase was limited to ${\sim}30{\mu}M$ in the presence of $1{\mu}M$ cytosolic $Ca^{2+}$. Our method solved the problem of NADH signal contamination during the use of Fura-2 analogs, and therefore the method may be useful when NADH interference is expected.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.820-824
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• 2014

TiNOx multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. 4 multi-layers of $TiO_2$/TiNOx(LMVF)/TiNOx(HMVF)/Ti/substrate have been prepared with ratio of Ar and ($N_2+O_2$) gas mixture. $TiO_2$ of top layer is anti-reflection layer on double TiNOx(LMVF)/TiNOx(HMVF) layers and Ti metal of infrared reflection layer. In this study, the crystallinity and surface properties of TiNOx thin films were estimated by X-ray diffraction(XRD) and field emission scanning electron microscopy(FE-SEM), respectively. The grain size of TiNOx thin films shows to increase with increasing sputtering power. The composition of thin films has been investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 200~1,500 nm. The TiNOx multi-layer films show the excellent optical performance beyond 9% of reflectance in those ranges wavelength.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.230-230
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• 2010

유기물 반도체 화합물인 Cu-Pc(copper(II)-phthalocyanine)는 우수한 전기적 광학적 특성을 가지며, OLED, MISFET등 소자로서의 활용도가 높다. Cu-Pc 화합물은 $\alpha$-phase, $\beta$-phase, $\gamma$-phase를 포함하는 여러 가지 다결정 polymer로 존재할 수 있다. 가장 잘 알려진 구조로는 열적으로 준안정적인 $\alpha$-phase와 열적으로 안정적인 $\beta$-phase가 있다. Cu-Pc 박막의 구조 및 흡수 특성과 전기적 특성에 대한 기술이 확실히 규명되지 않아 본 연구에서는 두께와 열처리 조건에 따른 결정성 및 방향성을 조사하기 위하여 $\alpha$-phase와 $\beta$-phase의 phase transition 현상 및 전기적 광학적 특성을 규명 하고자 한다. 진공증착 방법 중 하나인 PVD 방법의 thermal evaporation deposition을 이용하여 glass, ITO 기판위에 두께와 열처리에 따른 전기적?광학적 특성을 연구하였다. Cu-Pc 박막의 성장두께는 5nm~50nm 이내로 fluxmeter 및 thickness monitor를 이용하여 제어하였다. 5nm~50nm의 두께에 따른 기판온도를 $200^{\circ}C$로 고정하여 전열 처리 및 후열 처리하여 온도에 따른 박막을 성장한 후, 결정 구조 및 특성 변화와 phase transition 분석하였다. 제작된 Cu-Pc의 박막은 $\alpha$-phase와 $\beta$-phase로 구분할 수 있으며, 열처리에 따른 phase transition 현상이 뚜렷함을 알 수 있다. XRD(X-ray diffraction)를 통하여 박막에 대한 결정 구조 분석 및 FE-SEM(field emission scanning electron microscopy)와 AFM(atomic force microscopy)을 이용하여 Cu-Pc 박막의 구조적 결정성과 방향성 등, 표면 상태와 형상구조에 대해 표면의 특성을 측정하며, 광 흡수도(UV-visible absorption spectra)을 이용하여 phase transition 현상에 따른 I-V 특성을 비교분석 하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.189-189
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• 2010

ZnO nanorods 구조는 광소자 및 태양광 소자의 성능을 향상시키기 위해서 무반사계수, 광추출효율, 전기적, 열적 전도도를 개선시킬 수 있어, 매우 큰 관심을 가지고 왔다. 또한 Ag 나노입자는 표면 플라즈몬 효과를 이용하여 LED나 태양전지에 응용하여 소자의 성능이 향상됨을 이론적, 실험적으로 증명되어 왔으며, 현재에도 활발한 연구가 진행되고 있다. 이러한 ZnO nanorods 특성과 Ag 나노입자의 표면 플라즈몬 효과를 이용하기 위해서, 본 연구에서는 Ag 나노 입자를 형성된 ZnO seed층에 ZnO nanorods를 성장시켰다. 시료를 제작을 위해서 비교적 성장이 간단하고 저온성장이 가능한 화학적 합성방법을 이용하였다. Ag 나노입자가 형성된 ZnO seed층 제작을 위해서 먼저 Si 기판위에 RF magnetron 스퍼터를 이용하여 고진공, $N_2$ 분위기에서 일정한 두께로 증착을 하였으며, 이후 Ag 박막을 thermal evaporator로 10 nm 두께로 증착하였다. 그 다음, 크기가 다른 Ag 나노입자를 형성을 위해서 rapid thermal annealing (RTA)을 여러 가지 온도에서 수행하였다. 그리고 이러한 시료들를 이용하여, ZnO nanorods를 성장하기 위하여, $90-95^{\circ}$의 온도에서 zinc nitrate $Zn(NO_3)_2{\cdot}6H_2O$과 hexamethylentetramines (HMT)으로 혼합된 용액에 담가두어 ZnO nanorods를 성장시켰다. Ag 나노입자의 크기에 따라 ZnO nanorods의 구조와 형태에 대하여 어떠한 영향을 주는지를 관찰하기 위해 field emission scanning electron microscopy (FE-SEM)을 이용하여 측정하였으며, Ag와 ZnO의 성분분석과 결정성을 조사하기 위해 X-ray diffraction (XRD)을 이용하여 분석하였다. 그리고 표면 플라즈몬에 의한 영향에 대하여 조사하기 위해, ZnO nanorods와 Ag 나노입자가 형성된 ZnO nanorods를 UV-Vis-NIR spectrophotometer을 이용하여 흡수계수와 반사계수를 비교하여 측정하였으며. 태양전지의 성능향상을 수 있음을 이론적으로 계산하였다. 그리고 또한 photoluminescence (PL) 분석을 수행하여 ZnO nanorods의 구조에 대하여 Ag 나노입자의 영향에 대한 광특성을 측정하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.203.1-203.1
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• 2013

Zinc oxide (ZnO) nanocrystalline thin films on various growth temperatures for active layer and different buffer layer thickness were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on Si substrates. The ZnO active layer were grown with various growth temperature from 500 to $800^{\circ}C$ and the ZnO buffer layer were grown for different time from 5 to 40 minutes. To investigate the structural and optical properties of the ZnO thin films, scanning electron microscope (SEM), X-ray diffractometer (XRD), and photoluminescence (PL) spectroscopy were used, respectively. In the SEM images, the ZnO thin films have high densification of grains and good roughness and uniformity at $800^{\circ}C$ for active layer growth temperature and 20 minutes for buffer layer growth time, respectively. The PL spectra of ZnO buffer layers and active layers display sharp near band edge (NBE) emissions in UV range and broad deep level emissions (DLE) in visible range. The intensity of NBE peaks for the ZnO thin films significantly increase with increase in the active layer growth temperature. In addition, the NBE peak at 20 minutes for buffer layer growth time has the largest emission intensity and the intensity of DLE peaks decrease with increase in the growth time.

• Journal of Korean Society on Water Environment
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• v.23 no.4
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• pp.482-489
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• 2007

Fluorescence properties and carbohydrate content were investigated using ultrafiltrated size fractions of dissolved organic matters (DOM) originated from different sources. The materials included a treated sewage, an algal organic matter, and a soil leachate, all of which are major constituents of dissolved organic matter in a typical urban river. Four different size fractions were separated from the three sources of each DOM. The size distribution demonstrated that a higher molecular weight fraction was more present in soil leachate compared to two other source DOMs. A higher content of carbohydrates was observed in the following order - algal DOM > treated sewage > soil leachate. A wide range of specific UV absorbance was observed from size fractions of a single source DOM, indicating that aromatic carbon structures are heterogeneously distributed within one source of DOM. The structural heterogeneity was the most pronounced for the soil leachate. The fluorescence index ($F_{450}/F_{500}$) of the treated sewage was similar to that (2.0) typically obtained from autochthonous DOM, suggesting that the treated sewage exhibited autochthonous organic matter-like properties. No protein-like fluorescence intensities were observed for all of the soil leachate size fractions whereas they were observed with two other source DOMs. Based upon the fluorescence peak ratios from fluorescence excitation-emission matrix (EEM), two discrimination indices could be suggested to distinguish three different source DOMs. It is expected that the suggested discrimination indices will be useful to predict the sources of DOM in a typical urban river affected by treated sewage.

• Korean Journal of Materials Research
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• v.16 no.12
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• pp.761-765
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• 2006

[ $II-III_2-(S,Se)_4$ ] structured of phosphor has been used at various field because those have high luminescent efficiency and broad emission band. Among these phosphors, the europium doped $BaGa_2S_4$ was prepared by solid-state method and had high potential application due to an emissive property of UV region. Also, the common sulfide phosphors were synthesized by using injurious $H_2S\;or\;CS_2$ gas. However, in this study $BaGa_2S_4:Eu^{2+}$ phosphor in addition to excess sulfur was prepared under at 5% $H_2/95%\;N_2$ reduction atmosphere. Thus, this process could be considered as large scale synthesis because of non-harmfulness and simplification. The photoluminescence efficiency of the prepared $BaGa_2S_4:Eu^{2+}$ phosphor increased 20% than that of commercial $SrGa_2S_4:Eu^{2+}$ phosphor. The prepared $BaGa_2S_4:Eu^{2+}$ could be applied to green phosphor for white LED of three wavelengths.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.125-131
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• 2015

Fluorine-doped $SnO_2$ (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of $300^{\circ}C$, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (${\sim}14.9{\Omega}/{\Box}$), high optical transmittance (~88.6 %), the best FOM (${\sim}19.9{\times}10^{-3}{\Omega}^{-1}$), and excellent thermal stability at an annealing temperature of $300^{\circ}C$ owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.