• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.506-509
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• 2004

We have investigated the generation of pretilt angle for a nematic liquid crystal (NLC) alignment with in-situ photoalignment method on polyimide (PI) surfaces using thin plastic substrates. The LC aligning capabilities and pretilt angle of the thin plastic substrates by in-situ photoalignment method were better than that of the glass substrate by general photoalignment. Also, the LC pretilt angle increased with increasing heating temperature and exposure time. And EO characteristics of photoaligned TN-LCDs using in-situ photodissociation method on glass substrate and on plastic substrate are also excellent.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.969-972
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• 2004

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. In this paper the effect of doping amounts of $Al_2O_3$ on the electrical, optical and morphological properties were investigated experimentally, The results show that the structural and electrical properties of the film are highly affected by the doping. The optimum growth conditions were obtained for films doped with 2 wt% of Al203 which exhibit a resistivity of $8.5{\times}10^{-4}{\Omega}-cm$ associated with a transmittance of 91.7 % for 840 nm in film thickness in the wavelength range of the visible spectrum.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.146-148
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• 2006

The quench characteristics of flux-lock type high-Tc superconducting fault current limiters(SFCL) was investigated, $YBa_2Cu_3O_{7-x}$(YBCO) thin film was used as the current limiting elements of the flux-lock type SFCL. The quench characteristics of current limiting elements consisting of the flux-lock type SFCL was more improved than that of the resistive type SFCL.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.875-876
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• 2006

Superconducting fault currents(SFCLs) are expected to improve not only reliability but also stability of power systems. The analysis on current limiting operations of the flux-lock type SFCL, which consists of a flux-lock reactor wound an iron core and a YBCO thin film, was compared the open-loop with the closed-loop iron core of the subtractive polarity winding. In the SFCL, operation characteristics could be controlled by adjusting the inductances and the winding directions of the coils, then magnetic field induced in the iron core. The current limiting characteristics under the same experimental conditions were generated regardless of the iron core conditions. We confirmed that capacity of the SFCL was increased effectively by the closed-loop iron core. However, the power burden of the system could be lowered by the open-loop iron core.

• Proceedings of the KIEE Conference
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• summer
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• pp.1130-1132
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• 2004

In this paper, we investigated the operational characteristics of the fault current limiting in the The flux-lock type high-Tc superconducting fault current limiter. The flux-lock type high-Tc superconducting fault current limiter was consisted of primary and secondary copper coils that flux was locked on iron core and YBCO thin film. The operational characteristic of a flux-lock type SFCL dependent on winding direction of coil 1 and coil 2, and the number of turns of coil 1 and coil 2, inductances of the coils, saturation in iron core, the properties of superconducting element etc. In this cases, we investigated the fault currents limiting characteristics of the flux-lock type SFCL when winding direction of coil 1 and coil 2 was subtractive polarity winding.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1499-1501
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• 2003

The A $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT)thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The electrical properties of SBT capacitors with top electrodes were studied. In the XRD pattern, the SBT thin films in all annealing temperatures had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized at $750^{\circ}C$ and grains largely grew in oxygen annealing atmosphere. The electrical properties of SBT capacitor with top electrodes represents a favorable properties in Pt electrode. The maxim urn remanent polarization and the coercive electric field with Pt electrode are $12.40C/cm^2$and 30kV/cm respectively. The dielectric constant and leakage current density with Pt electrode is 340 and $6.8110^{-10}A/cm^2$ respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.357-360
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• 2004

Al doped ZnO thin films have been were properties of excellent optical transmittance, low resistivity and wide bandgap where be widely used transparent electrode on solar cell. In this paper, ZnO:Al thin films on PC substrate were prepared by RF magnetron sputtering method using ceramic taget with diffrent deposition conditions. In addition, the electrical, structural, optical properties were investigated. we investigated sample properties of Sputter powers and pressures change in $25{\sim}125W,\;2{\times}10^{-2}{\sim}2{\times}10^{-3}Torr$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.547-550
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• 2004

Superconducting fault current limiter(SFCL) is expected to be introduced into electric power system in future as an effective countermeasure for the increase of the short-circuit current due to the growth of the electric power system. SFCL has a merit that the fault current can be limited by the resistance generated when a superconductor transits from a superconducting state to a normal state without additional detecting device. In this paper, we investigated the resistance variance of resistive type SFCL and the fault current limiting characteristics due to the amplitude of source voltage. We could obtain the more effective fault current limiting characteristics of SFCL as the source voltage increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.498-501
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• 2004

In this study, the threshold voltage and the response time of thermal stressed TN-LCDs showed the same performances on no thermal stressed TN-LCDs. There was little change of value in TN cells. Also, the transmittances of TN-LCDs on the rubbed PI surface were almost same while increasing thermal stress time. However, the thermal stability of TN cell was decreased by the high thermal stress for the long duration. Residual DC was decreased as the thermal stress increases. Especially, when TN cell was stressed more and more by heating, residual DC was changed a lot. As a result, the residual DC property of LCD in projection TV is affected very much by heating.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.939-942
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• 2004

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors were Prepared by using the capacitively coupled RF magnetron sputtering method. In this paper the effect of RF discharge power on the electrical, optical and structural properties were investigated experimentally. The results show that the structural and electrical properties of the film are highly affected by the variation of RF discharge power. The optimum growth conditions were obtained for films doped with 2 wt% of $Al_2O_3$ and 200 W in RF discharge power, which exhibit a resistivity of $10.4{\times}10^{-4}{\Omega}-cm$ associated with a transmittance of 89.66 % for 1000nm in films thickness in the wavelength range of the visible spectrum.