• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 A
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• pp.467-469
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• 2003

IEC(International Electrotechnical Commission) 62271-100 has been adopted for the design test of circuit breaker which is used as the main protecting device of power system. But, it is also necessary to separately receive the testing certificate in accordance with ANSI/IEEE standard for getting into the american market. Up to now, several domestic companies have completed the ANSI/IEEE testing in medium circuit breaker of distribution system, but they recently started the ANSI/IEEE testing in ultra high-voltage class of transmission and substation system. This paper introduces the testing techniques and its results for the making and breaking performance of 145kV, 40kA $SF_6$ gas circuit breaker which was firstly performed in KERI(Korea Electrotechnology Institute) by the ANSI/IEEE standard.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1513-1514
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• 2006

In this paper, there have been brief review about the important consideration in laboratory planning and construction of the artificial pollution testing facilities including 300 kV, 1800 kVA AC test system, which enable to lest and evaluate the UHV dielectric performance of power insulators up to transmission class. Also it is described simply about its trial running of the whole test system. To evaluate the performance characteristics against contamination for various power installation, especially for the insulators and kinds of bushings, brief investigation and an analysis of test objects and related international codes and standards have been conducted.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.180-183
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• 2003

The monolayer of oxygen atoms sandwitched between the adjacent nanocrystalline silicon layers was formed by ultra high vacuum-chemical vapor deposition (UHV-CVD). This multi-layer Si-O structure forms a new type of superlattice, semiconductor-atomic superattice (SAS). According to the experimental results, high-resolution cross-sectional transmission electron microscopy (HRTEM) shows epitaxial system. Also, the current-voltage (I-V) measurement results show the stable and good insulating behavior with high breakdown voltage. It is apparent that the system may form an epitaxially grown insulating layer as possible replacement of silicon-on-insulator (SOI), a scheme investigated as future generation of high efficient and high density CMOS on SOI.

• Journal of Electrical Engineering and Technology
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• 제10권3호
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• pp.1144-1153
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• 2015

The resonant mechanism of reradiation interference (RRI) over 1.7MHz from power transmission lines cannot be obtained from IEEE standards, which are based on researches of field intensity. Hence, the resonance is ignored in National Standards of protecting distance between UHV power lines and radio stations in China, which would result in an excessive redundancy of protecting distance. Therefore, based on the generalized resonance theory, we proposed the idea of applying model-based parameter estimation (MBPE) to estimate the generalized resonance frequency of electrically large scattering objects. We also deduced equation expressions of the generalized resonance frequency and its quality factor Q in a lossy open electromagnetic system, i.e. an antenna-transmission line system in this paper. Taking the frequency band studied by IEEE and the frequency band over 1.7 MHz as object, we established three models of the RRI from transmission lines, namely the simplified line model, the tower line model considering cross arms and the line-surface mixed model. With the models, we calculated the scattering field of sampling points with equal intervals using method of moments, and then inferred expressions of Padé rational function. After calculating the zero-pole points of the Padé rational function, we eventually got the estimation of the RRI’s generalized resonant frequency. Our case studies indicate that the proposed estimation method is effective for predicting the generalized resonant frequency of RRI in medium frequency (MF, 0.3~3 MHz) band over 1.7 MHz, which expands the frequency band studied by IEEE.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1851-1853
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• 2004

The important consideration in laboratory designing and construction of the artificial pollution testing facilities including 300kV, 1800kVA AC test system, which enable to test and evaluate the UHV dielectric performance of power insulators up to transmission class, has been dealt in this paper. To evaluate the performance characteristics against contamination for various power installation, especially for the insulators and kinds of bushings, brief investigation and an analysis of test objects and related international codes and standards have been conducted. With the special consideration concerning other matters in designing of these testing facilities have been described with the fixed ratings and references.

• 전자공학회논문지A
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• 제31A권4호
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• pp.63-69
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• 1994

The Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition(UHV-ECRCVD) system whose base pressure is 1${\times}10^{9}$ torr has been constructed. In-situ cleaning prior to the epitaxial growth was carried out at 56$0^{\circ}C$ by ECR generated uniform hydrogen plasma whose density is $10^{10}/cm{3}$. The natural oxide was effectively removed without damage by applying positive DC bias(+10V) to the substrate. RHEED(Reflection High Energy Electron Diffraction) analysis has been used to confirm the removal of the surgace oxide and the streaky 2$\times$1 reconstruction of the Si surface, and the suppression of the substrate damage is anaylized by X-TEM(cross-sectional Transmission Electron Microscopy). Surface cleaning technique by ECR hydrogen plasma confirmed good quality epitaxial growth at low temperature.

• 한국표면공학회지
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• 제29권6호
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.