• Korean Journal of Optics and Photonics
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• v.1 no.2
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• pp.210-216
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• 1990

This study was performed to obtain fundamental data on temperature increases in the dental tissues irradiated by IO.opm laser radiation. For this purpose a experimental facility was established. which was composed of a CO2 laser. a shutter unit and a temperature sensing device. The temperature changes in the pulp chamber of extracted molars. during and after the laser irradiation. were measured as function of laser power. the time of irradration and the thickness of the sample. An empirical formula for the maximum temperature increases, $\DeltaT_m$ was derived from the measured data as follows; $\DeltaT_m=\alphaP\Delta\tauexp(-\betad)$$ where P. $\Delta\tau$ and d are the laser power(W). irradiation time{sec) and the thickness(mm) between pulp chamber and occlusal surface. respectively. Also a theoretical calculation model based on simplified assumptions were established and the results from the calculation were compared with the measured temperature data. A fairly good agreement was obtained.obtained.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.179-179
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• 2010

1차원 나노구조를 갖는 ZnO를 성장하기 위해 Laser ablation, Chemical vapor deposition (CVD), Chemical transport method, Molecular beam epitaxy, Sputtering 등의 다양한 형성법들이 이용되어지고 있다. 특히 대량생산과 경제성 측면에서 많은 장점을 가지고 있는 CVD를 이용한 ZnO 성장 및 응용 연구가 활발하게 수행되고 있다. 본 연구에서는 Thermal CVD를 이용하여 반응물질과 기판 사이의 거리, 기판온도, $O_2$/Zn 비율 등의 성장변수를 변화시켜 ZnO 나노구조를 성장하고 구조 및 광학적 특성을 연구하였다. Scanning electron microscope를 통한 구조 특성평가 결과 반응물질과 기판 사이의 거리가 13 cm 이하의 조건에서 ZnO 나노구조들은 나노판(Nanosheet)과 나노선(Nanowire)이 혼재하여 성장된 것을 보였다. 그리고 반응물질과 기판사이의 거리가 15 cm 이상부터 나노판이 없어지고 수직한 ZnO 나노막대(Nanorod)가 형성되었다. 상온 Photoluminescence 스펙트럼에서 반응물질과 기판사이의 거리가 5에서 15 cm로 증가할수록 결함 (Defect)에 의해 발생된 515 nm 파장의 최대세기 (Maximum intensity)가 10배 이상 감소한 반면, ZnO 나노구조에 의한 378 nm 파장의 NBE발광 (Near band edge emission)은 8배 이상 증가하였다. 이러한 구조 및 광학적 결과로부터, 질서 없이 성장된 것보다 수직 성장된 ZnO 나노구조의 결정질(Crystal quality)이 좋은 것을 확인하였다. 이를 바탕으로 성장변수에 따른 ZnO 나노구조의 형성 메커니즘을 Zn와 O 원자의 성장거동을 기반으로 한 모델을 이용하여 해석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.261-261
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• 2010

본 연구에서는 PBMS (Particle Beam Mass Spectrometer)와 ISPM (In-Situ Particle Monitor)을 연계하여 BPSG (Borophosphosilicate Glass) 및 PSG (Phosphosilicate Glass) 박막 증착을 위한 CVD (chemical vapor deposition) 공정 중 발생하는 오염입자 발생특성에 대해 비교 평가하였다. 소스는 TEB (Triethylborate), TEPO (Triethylphosphate) 및 TEOS (Tetraethoxysilane)를 사용하였고, 운반가스 및 반응가스로 He과 $O_2$ 및 $O_3$를 사용하였다. 증착온도와 압력은 각각 $450^{\circ}C$, 200 Torr 이었다. 반응기의 배기라인에 PBMS와 ISPM을 설치하고 500 nm 이하의 입자에 대해 공정단계별 시간에 따른 모니터링 결과 전 공정에 걸쳐 동일한 패턴의 입자발생분포를 보였으며, 특히 PBMS의 경우 ISPM의 입자측정한계인 260 nm 이하의 입자크기도 측정할 수 있었다. 입자발생이 안정적으로 일어나는 증착공정 중 PBMS를 통하여 입자크기를 측정한 결과 BPSG의 경우 약 110 nm, PSG의 경우 약 80 nm의 분포를 나타내었다. 이를 통해 TEB 소스가 배제된 PSG의 경우 BPSG의 경우보다 입자의 성장이 지체됨을 확인하였다. 측정에 대한 신뢰성을 확보하기 위해 PBMS 내의 TEM (Transmission Electron Microscopy) grid를 이용하여 입자를 샘플링 하였고, TEM 분석을 실시한 결과 PBMS 측정결과와 잘 일치하였다. 또한 EDS (Energy Dispersive Spectroscopy) 분석을 통하여 입자성분에 대해 검증하였다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.506-508
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• 2005

In general, organic TFTs are comprised of four components: gate electrode, gate dielectric, organic active semiconductor layer, and source and drain contacts. The TFT current, in turn, is typically determined by channel length and width, carrier field effect mobility, gate dielectric thickness and permittivity, contact resistance, and biasing conditions. More recently, a number of techniques and processes have been introduced to the fabrication of OTFT circuits and displays that aim specifically at reduced fabrication cost. These include microcontact printing for the patterning of metals and dielectrics, the use of photochemically patterned insulating and conducting films, and inkjet printing for the selective deposition of contacts and interconnect pattern. In the fabrication of organic TFTs, microcontact printing has been used to pattern gate electrodes, gate dielectrics, and source and drain contacts with sufficient yield to allow the fabrication of transistors. We were fabricated a pentacene OTFTs on flexible PEN film. Au/Cr was used for the gate electrode, parylene-c was deposited as the gate dielectric, and Au/Cr was chosen for the source and drain contacts; were all deposited by ion-beam sputtering and patterned by microcontact printing and lift-off process. Prior to the deposition of the organic active layer, the gate dielectric surface was treated with octadecyltrichlorosilane(OTS) from the vapor phase. To complete the device, pentacene was deposited by thermal evaporation and patterned using a parylene-c layer. The device was shown that the carrier field effect mobility, the threshold voltage, the subthreshold slope, and the on/off current ratio were improved.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.17-17
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• 1998

Synchrotron radiation is produced when charged particles moving with relativistic velocities a are accelerated - for example, deflected by the bending magnets which guide the electron or p positrons in circular accelerators or storage rings. By using special focusing magnetic lattices i in the particle accelerators it is possible to make the dimensions of the particle beam very small with a hi맹 charge density which results in a light source with high b디lIiance. Synchrotron light h has important properties which make it ideal for a wide range of investigations in surface s science. The fact that the spectrum of electromagnetic radiation emitted in a bending magnet e extends in a continuum from the 얹r infra red region to hard x-rays means that it is id않I for a v variety of spectroscopic studies. Since there are no convenient lasers, or other really bright l light sources, in the vacuum ultraviolet and soft x-ray re.밍ons the development of synchrotron r radiation has enabled enormous advances to be made in this di펌C비t spectr따 re밍on. P Polarization-dependent measurements, for ex없nple ellipsometry or circular dichroism studies a are possible because the radiation has a well-defined polarization - linear in the plane of orbit w with additional right-circular, or left-circular, components for emission an생es above, or below, t the horizontal, respectively. Since the synchrotron light is emitted from a bunch of charge c circulating in a ring the light is emitted with a well-defined time structure with a short flash of l light every time a bunch passes an exit port. The time structure depends on the size of the ring a and the number and sequence of filling of the bunches. A pulsed light source enables time¬r resolved studies to be performed which provide direct information on the lifetimes and decay m modes of excited states and in addition opens up the possibility of using time of flight t techniques for spectroscopic studies. The fact that synchrotron radiation is produced in a clean u ultrahi야 vacuum environment is of gr않t importance for surce science studies. The current t비rd generation synchrotron light sources provide exceptionally high baliance and stability a and open up possibilities for experiments which would have been inconceivable only a short time ago.

• Imaging Science in Dentistry
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• v.53 no.4
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• pp.355-363
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• 2023

Purpose: Sonographic elastography can be used to evaluate the hardness of muscle tissue through the application of compression. Strain elastography gauges hardness through the comparison of echo sets before and after compression. This study utilized ultrasonography to measure the thickness and hardness of the masseter muscle in individuals with temporomandibular joint(TMJ) osteoarthritis. Materials and Methods: This study included 40 patients who presented with joint pain and were diagnosed with TMJ osteoarthritis via diagnostic cone-beam computed tomography, along with 40 healthy individuals. The thickness and hardness of each individual's masseter muscle were evaluated both at rest and at maximum bite using ultrasonography. The Mann-Whitney U test and the chi-square test were employed for statistical analysis, with the significance level set at P<0.05. Results: The mean thickness of the resting masseter muscle was 0.91 cm in patients with osteoarthritis, versus 1.00 cm in healthy individuals. The mean thickness of the masseter muscle at maximum bite was 1.28 cm in osteoarthritis patients and 1.36 cm in healthy individuals. The mean masseter elasticity index ratio at maximum bite was 4.51 in patients with osteoarthritis and 3.16 in healthy controls. Significant differences were observed between patients with osteoarthritis and healthy controls in both the masseter muscle thickness and the masseter elasticity index ratio, at rest and at maximum bite (P<0.05). Conclusion: The thickness of the masseter muscle in patients with TMJ osteoarthritis was less than that in healthy controls. Additionally, the hardness of the masseter muscle was greater in patients with TMJ osteoarthritis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.715-722
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• 1994

Thermochromic $Vo_{2}$ thin films for "smart windows" were prepared by electron beam evaporationmethod on a glass substrate and spectral transmittances were examined by spectrophotometer. Substratetemperature of $300^{\circ}C$ and annealing temperature of $400^{\circ}C$ were found to be effective to give athermochromism on $Vo_{2}$ thin film due to the crystallization of the thin film. Furthermore, annealing of$Vo_{2}$ thin film affected the spectral transmittance and reduced the transmittance significantly at wavelengthbelow 500nm.$V_{0.95}W_{0.05}O_{2}$ thin film doped by 5 atomic percent of W showed semiconductor-metal transition around 0$0^{\circ}V_{0.995}W_{0.005}O_{2}$thin film which contains 0.5 atomic percent Sn showed therrnochrornisrn when it was depositedat substrate temperature of $300^{\circ}C$ and annealed at $450^{\circ}C$ for 5 hours in argon gas. The transitiontemperature of the $V_{0.995}W_{0.005}O_{2}$ thin film was found to be about $25^{\circ}C$ and showed some hysterisis. and showed some hysterisis.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.306-307
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• 2011

Franz Keldysh Oscillation (FKO)은 p-n 접합 구조의 공핍층(depletion zone)에서 전기장(electric field)에 의해 발생되며, Photoreflectance (PR) spectroscopy를 통하여 관측된다. InAs/GaAs 양자점 태양전지(Quantum Dot Solar Cells, QDSCs)에서 PR 신호에 대한 Fast Fourier Transform (FFT)을 통하여 FKO 주파수들을 관측할 수 있고, 각각의 FKO 주파수들은 태양전지 구조에 대응하는 표면 및 내부전기장(internal electric field) 들로 분류할 수 있다. InAs/GaAs 양자점 태양전지에서 AlGaAs potential barrier의 두께에 따른 내부전기장의 변화를 조사하기 위해, GaAs-matrix에 8주기의 InAs 양자점 층이 삽입된 태양전지를 molecular beam epitaxy (MBE) 방법으로 성장하였다. 양자점의 크기는 2.0 monolayer (ML)이며, 각 양자점 층은 1.6 nm에서 6.0 nm의 AlGaAs potential barrier들로 분리되어 있다. 또한 양자점 층의 위치에 따라 내부전기장 변화를 조사하기 위해, p-i-n 구조에서 양자점 층이 공핍층 내에 위치한 경우와 p+-n-n+ 구조에서 양자점 층이 공핍 층으로부터 멀리 떨어진 n-base 영역에 삽입하여 실험결과를 비교분석하였다. PR 실험결과로부터, p-i-n 구조에서 InAs 양자점 태양전지의 내부전기장 변화는 potential barrier 두께에 따라 다소 복잡한 변화를 보였으며, 이는 양자점 층이 공핍층 내에 위치함으로써 격자 불일치(lattice mismatch)로 발생된 응력(strain)의 영향으로 설명할 수 있다. 이러한 결과들을 각각의 태양전지 구조에서 표면 및 내부전기장에 대해 계산된 값들에 근거하여, p+-n-n+ 구조에서 양자점 층이 공핍 층으로부터 멀리 떨어진 영역에 삽입된 경우의 결과와 비교해 보면 내부전기장의 변화는 더욱 분명해진다. 즉, 양자점 층의 potential barrier의 두께를 조절하거나, 양자점 층의 위치를 변화시킴으로써 양자점 태양전지의 내부전기장을 조작할 수 있으며, 이는 PR 실험을 통해 FKO를 관측함으로써 확인할 수 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.293-294
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• 2011

It is known that semiconductor quantum-dot (QD) heterostructures have superior zero-dimensional quantum confinement, and they have been successfully applied to semiconductor laser diodes (QDLDs) for optical communication and infrared photodetectors (QDIPs) for thermal images [1]. The self-assembled QDs are normally formed at Stranski-Krastanov (S-K) growth mode utilizing the accumulated strain due to lattice-mismatch existing at heterointerfaces between QDs and cap layers. In order to increase the areal density and the number of stacks of QDs, recently, sub-monolayer (SML)-thick QDs (SQDs) with reduced strain were tried by equivalent thicknesses thinner than a wetting layer (WL) existing in conventional QDs (CQDs) by S-K mode. Despite that it is very different from CQDs with a well-defined WL, the SQD structure has been successfully applied to QDIP[2]. In this study, optical characteristics are investigated by using photoluminescence (PL) spectra taken from self-assembled InAs/GaAs QDs whose coverage are changing from submonolayer to a few monolayers. The QD structures were grown by using molecular beam epitaxy (MBE) on semi-insulating GaAs (100) substrates, and formed at a substrate temperature of 480$^{\circ}C$ followed by covering GaAs cap layer at 590$^{\circ}C$. We prepared six 10-period-stacked QD samples with different InAs coverages and thicknesses of GaAs spacer layers. In the QD coverage below WL thickness (~1.7 ML), the majority of SQDs with no WL coexisted with a small amount of CQDs with a WL, and multi-peak spectra changed to a single peak profile. A transition from SQDs to CQDs was found before and after a WL formation, and the sublevel of SQDs peaking at (1.32${\pm}$0.1) eV was much closer to the GaAs bandedge than that of CQDs (~1.2 eV). These revealed that QDs with no WL could be formed by near-ML coverage in InAs/GaAs system, and single-mode SQDs could be achieved by 1.5 ML just below WL that a strain field was entirely uniform.