• Title/Summary/Keyword: U-band

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The LDA+U Effect on the Electronic Structure and Magnetism of Bulk, Monolayer, and Linear Chain of Iron (덩어리, 단층 및 사슬 구조 철의 전자구조와 자성에 대한 LDA+U 효과)

  • Landge, Kalpana K.;Bialek, Beata;Lee, Jae-Il
    • Journal of the Korean Magnetics Society
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    • v.19 no.3
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    • pp.81-84
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    • 2009
  • We examine the effect of U term (U = 3 eV) describing the Coulomb interactions between electrons on the results of electronic band structure calculations carried out for bcc Fe bulk, monolayer, and chain. We investigated the properties of the three Fe structures by using the all-electron total-energy full-potential linearized augmented plane wave method. The U term was included in the exchange - correlation functionals constructed on the basis of local density approximation (LDA) and general gradient approximation (GGA). We found that in the case of bcc Fe bulk structure inclusion of the U term leads to the overestimated values of magnetic moment on Fe atom. The values of magnetic moment calculated for Fe in monolayer and chain are in accordance with calculations in which the U term was not included. In general, for each system the calculated values of magnetic moment on Fe sites were larger when the U term was incorporated in the energy functional. In Fe bulk, the value of magnetic moment $2.54{\mu}_B$ for LDA+U larger than $2.25{\mu}_B$ for LDA.

High redshift galaxy clusters in ELAIS-N1/N2 fields with a new color selection technique

  • Hyun, Minhee;Im, Myungshin;Kim, Jae-Woo;Lee, Seong-Kook
    • The Bulletin of The Korean Astronomical Society
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    • v.39 no.1
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    • pp.48.1-48.1
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    • 2014
  • Galaxy clusters, the largest gravitationally bound systems, are an important means to place constraints on cosmological models. Moreover, they are excellent places to test galaxy evolution models in connection to the environments. To this day, massive clusters have been found unexpectedly(Kang & Im 2009, Durret et al. 2011, Tashikawa et al. 2012) and evolution of galaxies in cluster have been still controversial (Elbaz et al. 2007, Cooper et al. 2008, Tran et al. 2009). Finding galaxy cluster candidates at z>1 in a wide, deep imaging survey data will enable us to solve the such issues of modern extragalactic astronomy. We report new candidates of galaxy clusters and their physical properties in one of the wide and deep survey fields, European Large Area ISO Survey North1(ELAIS-N1) and North2(ELAIS-N2) fields, covering sky area of and each. We also suggest a new useful color selection technique to separate 1 < z < 2 galaxies from low-z galaxies by combining multi-wavelength data from the UKIRT Infrared Deep Sky Survey Deep Extragalactic Survey (UKIDSS DXS/J and K band), Spitzer Wise-area InfraRed Extragalactic survey (SWIRE/two mid-infrared bands), Canada France Hawaii Telescope (CFHT/z band), Issac Newton Telescope(INT/ u, g, r, i, z band) and Infrared Medium-deep Survey(IMS/J band).

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Technological Trends of C-/X-/Ku-band GaN Monolithic Microwave Integrated Circuit for Next-Generation Radar Applications (차세대 레이더용 C-/X-/Ku-대역 GaN 집적회로 기술 동향)

  • Ahn, H.K.;Lee, S.H.;Kim, S.I.;Noh, Y.S.;Chang, S.J.;Jung, H.U.;Lim, J.W.
    • Electronics and Telecommunications Trends
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    • v.37 no.5
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    • pp.11-21
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    • 2022
  • GaN (Gallium-Nitride) is a promising candidate material in various radio frequency applications due to its inherent properties including wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. Notably, AlGaN/GaN heterostructure field effect transistor exhibits high operating voltage and high power-density/power at high frequency. In next-generation radar systems, GaN power transistors and monolithic microwave integrated circuits (MMICs) are significant components of transmitting and receiving modules. In this paper, we introduce technological trends for C-/X-/Ku-band GaN MMICs including power amplifiers, low noise amplifiers and switch MMICs, focusing on the status of GaN MMIC fabrication technology and GaN foundry service. Additionally, we review the research for the localization of C-/X-/Ku-band GaN MMICs using in-house GaN transistor and MMIC fabrication technology. We also discuss the results of C-/X-/Ku-band GaN MMICs developed at Defense Materials and Components Convergence Research Department in ETRI.

Studies on the Exo-maltotetraohydrolase of Pseudomonas stutzeri IAM 12097 -Part I. Purification of Exo-maltotetraohydrolase- (Pseudomonas stutzeri IAM 12097의 Exo-maltotetraohydrolase에 관한 연구(硏究) -제일보(第一報). Exo-maltotetraohydrolase의 정제(精製)-)

  • Lee, Mi-Ja;Chung, Man-Jae
    • Applied Biological Chemistry
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    • v.27 no.2
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    • pp.73-78
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    • 1984
  • The optimum culture time and initial pH, for the production of exo-maltotetraohydrolase from Pseudomonas stutzeri IAM 12097, in the trypticase medium were 36 hrs and pH 6.3, respectively. Exo-maltotetraohydrolase was purified by $(NH_4)_{2}SO_4$ and two times of column chromatography on DEAE-cellulose. Specific activity of the purified enzyme was 108.6U/mg protein and yield of the enzyme activity was 9.4%. The purified enzyme showed a single band on polyacrylamide gel electrophoresis and SDS-polyacrylamide gel electrophoresis.

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