• Korean Journal of Applied Biomechanics
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• v.13 no.3
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• pp.47-65
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• 2003

The purpose of this study was to investigate the differences of the kinematical and the kinetical factors that calculated from preflight to postflight of salto forward straight 3/2 turn motion between skitters and less-skitters. four S-VHS video cameras operating at 60Hz were used to record the performances. five elite male gymnasts were participated in this study as subjects. three-dimensional coordinates of 20 body landmarks during each trial were collected using a Direct Linear Transformation method. The digitized body landmarks were smoothed using a Butterworth second order with low pass digital filter and a cutoff frequency of 10Hz. 1. A skitter, got a high score for performance, showed shorter time and faster horizontal velocity than a less-skitter at the board contact. also, a skitter extended quickly his knee and hip joint after contacting board for preflight phase. 2. A skitter revealed faster time and horizontal velocity the vault from taking off board than a less-skiller. A skitter took a long time and high distance to get the vertical peak compared with a less-skiller. 3. For the second phase, a skitter, who executes the most optimal motions among the subjects, displayed a long flight time, a high height, and a far flight distance as well as maintaining consistent horizontal speed even at the peak of post flight. On the other side, a less-scorer displayed a slow vertical velocity, distance and a short time at the point of take-off from vault as well as low height at the peak of post flight.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.131-131
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility ($\sim900cm^2/Vs$). These electronic properties allow high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances, the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. This paper studies different channel dimensons ($L_{CH}$ : $0.5{\mu}m$, $1\;{\mu}m$, $1.5\;{\mu}m$) and their effect on the the device transient characteristics. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship. with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. We observe an increase in the turn-on and turn-off time with increasing the channel length. The switching time in 4H-SiC DMOSFETs have been found to be seriously affected by the various intrinsic parasitic components, such as gate-source capacitance and channel resistance. The intrinsic parasitic components relate to the delay time required for the carrier transit from source to drain. Therefore, improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance.

• Journal of Satellite, Information and Communications
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• v.7 no.3
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• pp.145-148
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• 2012

In applying LCD to TV application, one of the most significant factors to be improved is image sticking on the moving picture. LCD is different from CRT in the sense that it's continuous passive device, which holds images in entire frame period, while impulse type device generate image in very short time. To reduce image sticking problem related to hold typedisplay mode, we made an experiment to drive TN-LCD like CRT. We made articulate images by turn on-off backlight, and we realized the ratio of Back Light on-off time by counting between on time and off time for video signal input during 1 frame (16.7ms). Conventional CCFL (cold cathode fluorescent lamp) cannot follow fast on-off speed, so we evaluated new fluorescent substances of light source to improve residual light characteristic of CCFL. We realized articulate image generation similar to CRT by CCFL blinking drive and TN-LCD overdriving. As a result, reduced image sticking phenomenon was validated by naked eye and response time measurement.

• Journal of Electrical Engineering and Technology
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• v.9 no.2
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• pp.686-694
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• 2014

A power semiconductor device, usually used as a switch or rectifier, is very significant in the modern power industry. The power semiconductor, in terms of its physical properties, requires a high breakdown voltage to turn off, a low on-state resistance to reduce static loss, and a fast switching speed to reduce dynamic loss. Among those parameters, the breakdown voltage and on-state resistance rely on the doping concentration of the drift region in the power semiconductor, this effect can be more important for a higher voltage device. Although the low doping concentration in the drift region increases the breakdown voltage, the on-state resistance that is increased along with it makes the static loss characteristic deteriorate. On the other hand, although the high doping concentration in the drift region reduces on-state resistance, the breakdown voltage is decreased, which limits the scope of its applications. This addresses the fact that breakdown voltage and on-state resistance are in a trade-off relationship with a parameter of the doping concentration in the drift region. Such a trade-off relationship is a hindrance to the development of power semiconductor devices that have idealistic characteristics. In this study, a novel structure is proposed for the Insulated Gate Bipolar Transistor (IGBT) device that uses conductivity modulation, which makes it possible to increase the breakdown voltage without changing the on-state resistance through use of a P-floating layer. More specifically in the proposed IGBT structure, a P-floating layer was inserted into the drift region, which results in an alleviation of the trade-off relationship between the on-state resistance and the breakdown voltage. The increase of breakdown voltage in the proposed IGBT structure has been analyzed both theoretically and through simulations, and it is verified through measurement of actual samples.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.703-707
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• 2001

The demand for protection of power electronic applications has during the last couple of years increased regarding the high-power IGBT modules. Even with an active protection, a high power IGBT still has a risk of exhibiting a violent rupture in the case of a fault if IGBT Fuses do not protect it. By introducing fuses into the circuit this will increase the circuit inductance and slight increase the over-voltage during the turn-off of the diode and the IGBT. It is therefore vital when using fuses that the added inductance is kept at a minimum. This paper discuss three issues regarding the IGBT Fuse protection. First, the problem of adding inductance of existing High-Speed and new Typower fuses in DC-link circuit is treated, second a short discussion of the protection of the IGBT module is done, and finally, the impact of the high frequency loading on the current carrying capability of the fuses is presented.

• Proceedings of the KIEE Conference
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• 2001.07b
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• pp.977-979
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• 2001

The application of SRM(Switched Reluctance Motor) is dramatically increasing due to a simple mechanical structure, high efficiency and a good high speed characteristics. Generally, turn-off angle of power switch must be limited the demagnetization period. To control high conduction ratio in motor operation and regenerative voltage in the generator operation in the SRM, multi-level voltage control is effective. This paper proposes multi-level inverter to have a maximum conduction ratio of SRM. The proposed method is verified by experiment.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.22 no.6
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• pp.353-360
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• 2010

Recently H1N1(swine flu) and SARS has been infected widely in the world; we have to care about germs and virus in indoor air environment. The air sterilization system investigated in this study allows occupants to turn on/off and to control the incoming air speed and direction. To predict the performance of air sterilization system without real experiment, a simulation is considered to compare and analyze the performance of the air sterilization systems in a typical office space. Multiple system parameters including volume flow rate and velocity of supply air were varied and investigated during the simulation. The investigation result shows that difference (between simulation and experiment) was about 3.5% in case of minimum air flow rate and about 0.2% in case of maximum air flow rate. The results indicate that multi-zone simulation technique can be used to predict the performance of a sterilization system in personalized office.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.36 no.1
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• pp.3-8
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• 1987

The conventional autosequentially commutated current-fed inverter (ASCI) is widely employed with the induction motor drives for speed control. Howener, this inverter has a limit of high power and high frequency indution motor drives. One of the limitations is to be found in the commutation capacitors in the main circuit of this inverter. A new current-fed gate turn-off thyristor (GTO) inverter is developed. This inverter is composed of the main GTO bridge configuration and the improved energy rebound circuit (ERC)without the commutation capacitor. This inverter works stable at high frequency from light load to heavy one. The improved ERC is used not only to rebound the load reactive power to the dc link, but also to return the power in the load to the ac source. The new GTO inverter circuit and the characteristics of the inverter induction motor drives are explained and analyzed.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.16-19
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• 2000

Power transistors to be used in Power Integrated Circuits(PIC) are required to have low on resistance, fast switching speed, and high breakdown voltage. The lateral IGBTs(LIGBTs)are promising power devices for high voltage PIC applications, because of its superior device characteristics. In this paper, dual cathode LIGBT(DCIGBT) for high voltage is presented. We have verified the effectiveness of high blocking voltage in the new device by using two dimensional devices simulator. We have analyzed the forward blocking characteristics , the latch up performance and turn off characteristics of the proposed structure. Specially, we have focused forward blocking of LIGBT. The forward blocking voltage of conventional LIGBT and the proposed LIGBT are 120V and 165V, respectively. . The forward blocking characteristics of the proposed LIGBT is better than that of the conventional LIGBT. This forward blocking comparison exhibits a 1.5 times improvement in the proposed LIGBT.

• Journal of Power Electronics
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• v.6 no.2
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• pp.163-171
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• 2006

In this paper, a Switched Reluctance Motor (SRM) employed in an electric vehicle (EV) is designed using the finite element method (FEM). The static torque of the SRM is estimated through magnetic field analysis. The SRM temperature rise over operation time is estimated through heat transfer analysis. First, static torque and temperature rise over the time of 600W SRM is included in the experiment set, and are compared with the calculated results using the FEM under the same conditions. The validity of the magnetic field analysis and heat transfer analysis is verified by the comparisons. In addition, a 60 [kW] SRM employed in an EV, whose output characteristics are equal to a 1500 [cc] gasoline engine, is designed under magnetic field analysis and heat transfer analysis.