• Title/Summary/Keyword: Tunneling spectroscopy

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STM investigation of as-cleaved and annealed single crystalline GeTe (111) surface

  • Kim, Ji-ho;Choi, Hoon-hee;Chung, In;Lyo, In-Whan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.140.2-140.2
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    • 2016
  • Despite the growing interest in GeTe as a archetypal displacive ferroelectric material as well as the basis of related materials used in data-storage applications, atom-resolved study of single crystalline GeTe surface been lacking. Using low temperature scanning tunneling microscopy (STM) and spectroscopy (STS), we investigated as-cleaved and annealed surfaces of GeTe. We found that as-cleaved GeTe(111) surface is composed of at least two kinds of terraces at 78 K. While two terraces show metallic characteristics, they also exhibit distinctive I-V spectra and imaging conditions, with each being attributed to Ge-terminated, and Te-terminated surfaces respectively. GeTe(111) surfaces annealed at moderately elevated temperature introduces intricate networks of extended defect structures. We will present these data and discuss the role of vacancies in the formation of these structures.

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Mixed-Island Formation and Electronic Structure of Metallo-Porphyrin Molecules on Au(111)

  • Kim, Ho-Won;Jeong, Gyeong-Hun;Gang, Se-Jong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.303-303
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    • 2011
  • Orderings and electronic structures of organic molecules on metal substrates have been studied due to possible applications in electronic devices. In molecular systems, delocalized pi-electrons play important roles in the adsorption behaviors and electronic structures. We studied the adsorption and electronic structures of Co-Porphyrin molecules on Au(111) using scanning tunneling microscopy (STM) and spectroscopy (STS) at low temperature. Molecules form closely packed two-dimensional islands on Au(111) surface with two different types, having different shape evolutions in our energy-dependent STM observations. The Kondo resonance state, occurred by spin exchange interaction between the Co center atom and conduction electrons in the metal substrate, was observed in one type, while it was absent in the other type in scanning tunneling spectroscopy measurements. Possible origins of two molecular shapes will be discussed.

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Atomic-scale investigation of Epitaxial Graphene Grown on 6H-SiC(0001) Using Scanning Tunneling Microscopy and Spectroscopy

  • Lee, Han-Gil;Choe, Jeong-Heon;Kim, Se-Hun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.125-125
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    • 2012
  • Graphene was epitaxially grown on a 6H-SiC(0001) substrate by thermal decomposition of SiC under ultrahigh vacuum conditions. Using scanning tunneling microscopy (STM), we monitored the evolution of the graphene growth as a function of the temperature. We found that the evaporation of Si occurred dominantly from the corner of the step rather than on the terrace. A carbon-rich $(6{\sqrt{3}}{\times}6{\sqrt{3}})R30^{\circ}$ layer, monolayer graphene, and bilayer graphene were identified by measuring the roughness, step height, and atomic structures. Defect structures such as nanotubes and scattering defects on the monolayer graphene are also discussed. Furthermore, we confirmed that the Dirac points (ED) of the monolayer and bilayer graphene were clearly resolved by scanning tunneling spectroscopy (STS).

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Recent Development of MRAM Technology

  • Miyazaki, T.;Ando, Y.;Kubota, H.
    • Journal of Magnetics
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    • v.8 no.1
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    • pp.36-44
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    • 2003
  • Three topics which are related to technologies for developing of large capacity MRAM over Gbits are reviewed. First, it is stressed that inelastic-electron-tunnel-tunneling spectroscopy(IETS) is a powerfull method to investigate the interface state between magnetic electrodes and insulator. Second, magnetic tunnel junctions with small bias voltage dependence are introduced. Finally, fabrication method of carbon masks for very small magnetic tunnel junctions is demonstrated. These three topics were presented at 47^{th} MMM 2002 conference and each paper will appear in the proceedings.

Controlling Spin State of Magnetic Molecules by Oxygen Binding Studied Using Scanning Tunneling Microscopy

  • Lee, Soon-hyeong;Chang, Yun Hee;Kim, Howon;Kim, Kyung Min;Kim, Yong-Hyun;Kahng, Se-Jong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.145.1-145.1
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    • 2016
  • Binding and unbinding between molecular oxygen and metallo-porphyrin is a key process for oxygen delivery in respiration. It can be also used to control spin state of magnetic metallo-porphyrin molecules. Controlling and sensing spin states of magnetic molecules in such reactions at the single molecule level is essential for spintronic molecular device applications. Here, we demonstrate that spin states of metallo-porphyrin on surfaces can be controlled over by binding and unbinding of oxygen molecule, and be sensed using scanning tunneling microscopy and spectroscopy. Kondo localized state of metallo-porphyrin showed significant modification by the binding of oxygen molecule, implying that the spin state was changed. Our density functional theory calculation results explain the observations with the hybridization of unpaired spins in d and ${\pi}^*$ orbitals of metallo-porphyrin and oxygen, respectively. Our study opens up ways to control molecular spin state and Kondo effect by means of molecular binding and unbinding reactions on surfaces.

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Epitaxial Growth of Ge on Si(100) and Si(111) Surfaces (Si(100)와 Si(111) 표면의 Ge 에피 성장 연구)

  • Khang, Yun-Ho;Kuk, Young
    • Journal of the Korean Vacuum Society
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    • v.2 no.2
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    • pp.161-165
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    • 1993
  • The geometrical and electronic structure of epitaxially grown Ge on Si(100) and Si(111) surfaces has been studied by scanning tunneling microscopy. Since Ge atoms could be distinguished from Si atoms by scanning tunneling spectroscopy and voltage dependent STM images, the growth mode of the added layer could be studied. On the (100) surface with a (2${\times}$1) reconstruction, Ge overlayer grow preferentially on the B type step edges at 720K. On the (111) surface, Ge overlayer also grow on the step edges with (7${\times}$7) and (5${\times}$5) structure depending on their coverage and annealing temperature.

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Adsorptions and Dissociations of Nitric Oxides at Metalloporphyrin Molecules on Metal Surfaces: Scanning Tunneling Microscopy and Spectroscopy Study

  • Kim, Ho-Won;Chung, Kyung-Hoon;Kahng, Se-Jong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.108-108
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    • 2011
  • Organometallic complexes containing unpaired spins, such as metalloporphyrin or metallophthalocyanine, have extensively studied with increasing interests of their promising model systems in spintronic applications. Additionally, the use of these complexes as an acceptor molecule in chemical sensors has recently received great attentions. In this presentation, we have investigated adsorption of nitric oxide (NO) molecules at Co-porphyrin molecules on Au(111) surfaces with scanning tunneling microscopy and spectroscopy at low temperature. At the location of Co atom in Co-porphyrin molecules, we could observe a Kondo resonance state near Fermi energy in density of states (DOS) before exposing NO molecules and the Kondo resonance state was disappeared after NO exposing because the electronic spin structure of Co-porphyrin were modified by forming a cobalt-NO bonding. Furthermore, we could locally control the chemical reaction of NO dissociations from NO-CoTPP by electron injections via STM probe. After dissociation of NO molecules, the Kondo resonance state was recovered in density of state. With a help of density functional theory (DFT) calculations, we could understand that the modified electronic structures for NO-Co-porphyrin could be occurred by metal-ligand hybridization and the dissociation mechanisms of NO can be explained in terms of the resonant tunneling process via molecular orbitals.

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Geometrical and Electronic Structure of Epitaxial Graphene on SiC(0001) : A Scanning Tunneling Microscopy Study

  • Ha, Jeong-Hoon;Yang, Hee-Jun;Baek, Hong-Woo;Chae, Jung-Seok;Hwang, Beom-Yong;Kuk, Y.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.368-368
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    • 2010
  • Monolayers of graphite can be grown by fine controlled surface graphitization on the surfaces of various metallic and semiconducting materials. Epitaxial graphene grown on polished silicon carbide crystal surfaces has drawn much attention due to well known vacuum annealing procedures from surface analysis methods, especially scanning tunneling microscopy(STM) and scanning tunneling spectroscopy(STS). In this study, we have grown single layer and few layer graphene on silicon terminated 6H-SiC(0001) crystals. The growth of graphene layers were observed by low energy electron diffraction(LEED) patterns. Scanning tunneling microscopy and spectroscopy measurements were performed to illustrate the electronic structure which may display some clue on the influence of the underlying structure. Spatially resolved STS results acquired at the edges of epitaxial graphene show in detail the electron density of states, which is compared to theoretical calculations. STM measurements were also done on graphene films grown by chemical vapor deposition(CVD) and transferred onto a SiC(0001) crystal. These observations may provide a hint for the understanding of carrier scattering at the edges.

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