• Electrical & Electronic Materials
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• v.7 no.6
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• pp.473-480
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• 1994

The electron tunnel effect in polvimide LB films sandwiched between metal electrodes has been investigated in the present work by a study of both the elastic and inelastic tunneling components. By the results of elastic tunneling experiments in Au/Pl/Au tunneling junction, we can judge the height and thickness of tunnel barrier. The inelastic current in Inelastic Electron Tunneling Spectroscopy(IETS) is due to the interaction of the tunneling electron with the vibrational modes of the molecular species in the barrier. Measurements are done on Au/PI/Pb tunneling junctions. The spectra obtained are the second derivatives of the current-voltage characteristics of these junctions : specifically, d$^{2}$1/dV$^{2}$ as a function of voltage V. Because the energies measured by IETS can be directly compared to those measured by infrared and Raman spectroscopy, IR-RAS spectroscopy also measured for reference.

• 한국초전도학회:학술대회논문집
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• v.16
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• pp.58-58
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.307-307
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• 2011

Graphene is the hottest topic in condensed-matter physics due to its unusual electronic structures such as Dirac cones and massless linear dispersions. Graphene can be epitaxially grown on various metal surfaces with chemical vapor deposition processes. Such epitaxial graphene shows modified electronic structures caused by substrates. Here, local geometric and electronic structures of graphene grown on Ru(0001) will be presented. Scanning tunneling microscopy (STM) and spectroscopy (STS) was used to reveal energy dependent atomic level topography and position-dependent differential conductance spectra. Both topography and spectra show variations from three different locations in rippled structures caused by lattice mismatch between graphene and substrate. Based on the observed results, structural models for graphene on Ru(0001) system were considered.

• 한국초전도학회:학술대회논문집
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• 2007.07a
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• pp.42-42
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• 2007

• 한국초전도학회:학술대회논문집
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• v.15
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• pp.13-13
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• 2005

• Progress in Superconductivity
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• v.9 no.1
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• pp.18-22
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• 2007

For interlayer tunneling spectroscopy using a small stack of $Bi_2Sr_2CaCu_2O_{8+x}$ (Bi-2212) intrinsic junctions in a high-bias range, large self-heating takes place due to the poor thermal conductivity of Bi-2212. In this study, we numerically estimate the self-heating around a Bi-2212 sample stack for I-V or dI/dV-V measurements. Our results show that the temperature discrepancy between the Bi-2212 sample stack and top Au electrodes due to bias-induced self-heating is small enough along the c-axis direction of Bi-2212. On the other hand, the lateral temperature discrepancy between the sample stack and the Bi-2212 on-chip thermometer stack can be as large as ${\sim}20\;K$ for the highest bias required to observe the pseudogap hump structure. We thus suggest a new in-situ ac thermometry, employing the Au current-bias electrode itself deposited on top of the sample stack as the resistive thermometer layer, which is supposed to allow safe temperature measurements for the interlayer tunneling spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.181-181
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• 2011

The adsorption structure and the electronic property of azidotrimethyltin (ATMT) on monolayer graphene was investigated using scanning tunneling microscopy and core-level photoemission spectroscopy. We also confirmed the n-type doping effect by scanning tunneling spectroscopy and work function measurements. We will systematically demonstrate the variation of characteristic of graphene induced by the chemical functionalized molecule as we confirmed the results using scanning tunneling microscopy in conjunction with core-level photoemission spectroscopy.

• Progress in Superconductivity
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• v.7 no.1
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• pp.1-5
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• 2005

A pseudogap in the normal-state quasiparticle density of states of $high-T_c$ superconductors has been revealed in many different kinds of experiments. The existence of the pseudogap and the superconducting gap, and the correlation between them has attracted considerable attention because they are believed to be a key to understanding the mechanism of the $high-T_c$ superconductivity. The interlayer tunneling spectroscopy, excluding the surface-dependent effect, is one of the most accurate means to examine the electron spectral characteristics both in the superconducting and the normal states. In this study, a new constant-temperature intrinsic tunneling spectroscopic technique, excluding the overheating effect using the in-situ temperature monitoring combined with the digital proportional-integral-derivative control, is introduced. The implication on the $high-T_c$ superconductivity of the detailed temperature dependencies of the observed spectral weight in $Bi_{2}Sr_{2}CaCu_{2}O_{8+x}\;high-T_c$ material for overdoped and underdoped levels is discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.390-390
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• 2010

Superconducting proximity effects of Nb/Si(111) were investigated with scanning tunneling microscopy(STM) and scanning tunneling spectroscopy(STS). A highly-doped($0.002\;{\omega}{\diamondsuit}cm$) Si wafer pieces were used as substrate and Nb source was thermally evaporated onto the atomically clean silicon substrate. The temperature of the silicon sample was held at $600^{\circ}C$ during the niobium deposition. And the sample was annealed at $600^{\circ}C$ for 30 minutes additionally. Volmer-Weber growth mode is preferred in Nb/Si(111) at the sample temperature of $600^{\circ}C$. With proper temperature and annealing time, we can obtain Nb islands of lateral size larger than Nb coherence length(~38nm). And outside of the islands, bare Si($7{\times}7$) reconstructed surface is exposed due to the Volmer-Weber Growth mode. STS measurement at 5.6K showed that Nb island have BCS-like superconducting gap of about 2mV around the Fermi level and the critical temperature is calculated to be as low as 6.1K, which is lower than that of bulk niobium, 9.5K. This reduced value of superconducting energy gap indicates suppression of superconductivity in nanostructures. Moreover, the superconducting state is extended out of the Nb island, over to bare Si surface, due to the superconducting proximity effect. Spatially-resolved scanning tunneling spectroscopy(SR-STS) data taken over the inside and outside of the niobium island shows gradually reduced superconducting gap.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.13-13
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• 2010

Switching an elementary excitation by injecting a single carrier would offer the exciting opportunity for the ultra-high data storage technologies. However, there has been no methodology available to investigate the interaction of low energy discrete carriers with nano-structures. In order to map out the spatial dependency of such single carrier level interactions, we developed a pulse-and-probe algorithm, combining with low temperature scanning tunneling microscopy. The new tool, which we call single carrier spectroscopy, allows us to track the interaction with the target macrostructure with tunneling carriers on a single carrier basis. Using this tool, we demonstrate that it is possible not only to locally write and erase individual bi-solitons, reliably and reversibly, but also to track of creation yields of single and multiple bi-solitons. Bi-solitons are pairs of solitons that are elementary out-of-phase excitations on anti-ferromagnetically ordered pseudo-spin system of Si dimers on Si(001)-c(42) surfaces. We found that at low energy tunneling the single bisoliton creation mechanism is not correlated with the number of carriers tunneling, but with the production of a potential hole under the tip. An electric field at the surface determines the density of the local charge density under the tip, and band-bending. However a rapid, dynamic change of a field produces a potential hole that can be filled by energetic carriers, and the amount of energy released during filling process is responsible for the creation of bi-solitons. Our model based on the field-induced local hole gives excellent explanation for bi-soliton yield behaviors. Scanning tunneling spectroscopy data supports the existence of such a potential hole. The mechanism also explains the site-dependency of bi-soliton yields, which is highest at the trough, not on the dimer rows. Our study demonstrates that we can manipulate not just single atoms and molecules, but also single pseudo-spin excitations as well.