• 한국재료학회지
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• 제25권3호
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• pp.119-124
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• 2015

This paper investigates the change of the percolation threshold in the carbon powder-filled polystyrene matrix composites based on the experimental results of changes in the resistivity and relative permittivity of the carbon powder filling, the electric field dependence of the current, and the critical exponent of conductivity. In this research, the percolation behavior, the critical exponent of resistivity, and electrical conduction mechanism of the carbon powder-filled polystyrene matrix composites are discussed based on a study of the overall change in the resistivity. It was found that the formation of infinite clusters is interrupted by a tunneling gap in the volume fraction of the carbon powder filling, where the change in the resistivity is extremely large. In addition, it was found that the critical exponent of conductivity for the universal law of conductivity is satisfied if the percolation threshold is estimated at the volume fraction of carbon powder where non-ohmic current behavior becomes ohmic. It was considered that the mechanism for changing the gaps between the carbon powder aggregates into ohmic contacts is identical to that of the connecting conducting phases above the percolation threshold in a random resister network system. The electric field dependence is discussed with a tunneling mechanism. It is concluded that the percolation threshold should be defined at this volume fraction (the second transition of resistivity for the carbon powder-filled polystyrene matrix composites) of carbon powder.

• 대한토목학회논문집
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• 제26권1C호
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• pp.53-61
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• 2006

본 논문은 미고결 층상 지반에서 터널을 굴착함으로써 발생하는 응력 재분배 메커니즘을 모형 실험을 통해 규명한 것이다. 미고결 층상 지반을 모사하기 위해서는, 지반재료 자체만으로 자립이 가능케 하여 모형토조와의 마찰을 배제시킬수 있는 알루미늄 봉과 블록을 이용한 2차원 모형 실험을 실시하였다. 지층이 경사진 모형 지반에 대하여 터널 굴착에 따른 지반 변형과 응력 재분배 현상을 계측기를 통하여 각각 측정하였다. 지반변형에 대해서는, 지표면의 침하형상을 측정하여 굴착에 따른 변형 특성을 살펴보았다. 응력 재분배 현상에 대해서는, 터널 작용 토압과 터널 주변부 작용 토압의 변화를 각각 측정하여 상호 검토를 실시하였다. 이러한 실험 결과를 토대로 미고결 층상 지반에서 터널 굴착에 따른 지반의 변형 및 응력 재분배 메커니즘에 대한 상세한 검토를 수행하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.198-201
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• 2002

We have studied the temperature dependence of current-voltage and luminance-voltage characteristics of Organic Light Emitting Diodes(OLEDs). The OLEDS are based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as a hole transport, tris(8-hydroxyquinolinoline) aluminum(III) (Alq$_3$) as an electron transport, and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as a buffer layer. The current-voltage and luminance-voltage characteristics were measured in the temperature range of 10[K] and 300[K]. A conduction mechanism in OLEDs has been interpreted in terms of space-charge-limited current(SCLC) and tunneling mechanism.

• Journal of information and communication convergence engineering
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• 제5권1호
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• pp.45-49
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• 2007

The analytical transport model in subthreshold regime for double gate MOSFET has been presented to analyze the short channel effects such as subthreshold swing, threshold voltage roll-off and drain induced barrier lowering. The present approach includes the quantum tunneling of carriers through the source-drain barrier. Poisson equation is used for modeling thermionic emission current, and Wentzel-Kramers-Brillouin approximations are applied for modeling quantum tunneling current. This model has been used to investigate the subthreshold operations of double gate MOSFET having the gate length of the nanometer range with ultra thin gate oxide and channel thickness under sub-20nm. Compared with results of two dimensional numerical simulations, the results in this study show good agreements with those for subthreshold swing and threshold voltage roll-off. Note the short channel effects degrade due to quantum tunneling, especially in the gate length of below 10nm, and DGMOSFETs have to be very strictly designed in the regime of below 10nm gate length since quantum tunneling becomes the main transport mechanism in the subthreshold region.

• 한국산업정보학회논문지
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• 제12권3호
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• pp.47-59
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• 2007

IPv6 보급을 지연시키는 요소 중의 하나가 가정이나 SOHO 환경에서 많이 사용하는 IPv4 NAT이다. IPv4 NAT는 IPv6-in-IPv4 터널링 형태로 동작하는 전환기법인 ISATAP이나 6to4 환경에서는 제대로 동작하지 못하기 때문에 Microsoft에서는 이런 문제를 해결하기 위한 방안으로 Teredo를 제안하였다. 그러나 Teredo와 같은 터널링 기반의 전환 기법에서는 터널링 패킷의 이중 헤더 때문에 일반적인 방화벽의 패킷 필터링 방식에서는 내부 패킷 헤더에 대한 필터링이 전혀 수행되지 않는 보안 문제가 발생한다. 또한 Teredo에서는 등록되지 않은 서버와 릴레이를 이용한 공격이 발생할 수 있다. 본 논문에서는 Teredo 터널링에서 발생하는 이중 헤더 문제와 서버와 릴레이 공격을 해결하는 Teredo 전용 필터링 메커니즘을 제안하였다. 제안된 패킷 필터링 메커니즘은 리눅스 시스템의 넷필터(netfilter)와 ip6tables를 이용하여 설계 구현하였으며, 테스트베드 터널링 환경에서 기능 시험과 성능 평가를 통해 패킷 필터링 기능이 방화벽의 큰 성능 저하 없이 Teredo 전환 기법의 패킷 필터링 문제를 해결할 수 있음을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.13-13
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• 2010

Switching an elementary excitation by injecting a single carrier would offer the exciting opportunity for the ultra-high data storage technologies. However, there has been no methodology available to investigate the interaction of low energy discrete carriers with nano-structures. In order to map out the spatial dependency of such single carrier level interactions, we developed a pulse-and-probe algorithm, combining with low temperature scanning tunneling microscopy. The new tool, which we call single carrier spectroscopy, allows us to track the interaction with the target macrostructure with tunneling carriers on a single carrier basis. Using this tool, we demonstrate that it is possible not only to locally write and erase individual bi-solitons, reliably and reversibly, but also to track of creation yields of single and multiple bi-solitons. Bi-solitons are pairs of solitons that are elementary out-of-phase excitations on anti-ferromagnetically ordered pseudo-spin system of Si dimers on Si(001)-c(42) surfaces. We found that at low energy tunneling the single bisoliton creation mechanism is not correlated with the number of carriers tunneling, but with the production of a potential hole under the tip. An electric field at the surface determines the density of the local charge density under the tip, and band-bending. However a rapid, dynamic change of a field produces a potential hole that can be filled by energetic carriers, and the amount of energy released during filling process is responsible for the creation of bi-solitons. Our model based on the field-induced local hole gives excellent explanation for bi-soliton yield behaviors. Scanning tunneling spectroscopy data supports the existence of such a potential hole. The mechanism also explains the site-dependency of bi-soliton yields, which is highest at the trough, not on the dimer rows. Our study demonstrates that we can manipulate not just single atoms and molecules, but also single pseudo-spin excitations as well.

• 정보처리학회논문지C
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• 제10C권4호
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• pp.519-524
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• 2003

본 논문은 방화벽에 독립적인 IPv6 터널링 기법의 연구에 관한 것이다. IPv4망의 인프라를 유지하면서 점진적으로 IPv6망을 확대해 나가고 있는 철재, IPv6망간의 연동을 위해서 터널링을 널리 사용하고 있으나 방화벽에 의해 IPv4로 캡슐화된 패킷이 방화벽을 통과하지 못하는 문제점이 확인되었다. 즉, 방화벽 내부의 사용자들은 IPv6망의 접속에 제한을 받게 되며 방화벽 없이 IPv6망을 구축해야 한다. 본 논문에서는 방화벽에 의해 캡슐화된 패킷이 차단되는 것을 해결하기 위한 방법으로 Double-encapsulation 방식과 HTTP 터널링 기법을 응용한 방식을 제안하였으며 실험결과 패킷 차단없이 IPv6망간의 연동이 이루어짐을 확인하였다.

• 한국지반공학회논문집
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• 제22권10호
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• pp.5-20
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• 2006

본 논문에서는 지하수위 하에서 터널이 시공되는 조건을 대상으로 응력-간극수압 연계 유한요소해석 수행시 모델링 측면에서 중요하게 다뤄져야 하는 내용을 고찰하였다. 먼저 연계해석 수행시 요구되는 지하수위 저하와 지반거동과의 관계에 대한 배경 이론을 알아보았으며, 이를 토대로 모델링 측면에서 해석결과에 영향을 미칠 수 있는 다양한 인자들을 선정하고, 선정된 영향인자에 대한 매개변수 연구를 수행하였다. 지하수위 저하가 동반되는 터널 시공조건에서의 유한요소석 모델링 결과는 지반의 불포화특성 고려여부가 가장 큰 영향을 미치는 것으로 나타났으며 본 고에서는 결과를 종합하여 연계해석 모델링시 중요하게 검토되어야 고려사항을 제시하였다.

• 한국전기전자재료학회논문지
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• 제21권7호
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• pp.615-619
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• 2008

A molecular memory device which has a structure of Al/$Al_2O_3$/ASA-15 LB monolayer/Ti/Al device, was fabricated. To study a charge transfer mechanism of molecular memory devices, current density-voltage (J-V) characteristics were measured at an increasing temperature range from 10 K to 300 K with an interval of 30 K. Strong temperature-dependent electrical property and tunneling through organic monolayer at low bias (below 0.5 V) were appeared. These experimental data were fitted by using a theoretical formula such as the Simmons model. In comparison between the theoretical and the experimental results, it was verified that the fitting results using the Simmons model about direct tunneling was fairly fitted below 0.5 V at both 300 K and 10 K. Hopping conduction was also dominant at all voltage range above 200 K due to charges trapped by defects located within the dielectric stack, including the $Al_2O_3$, organic monolayer and Ti interfaces.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2017년도 추계학술대회
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• pp.241-242
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• 2017

Part of the channel in L-shaped tunnel field-effect transistor (LTFET) is very thin and suffers from quantum confinement effect. Role of quantum confinement effect on band-to-band-tunneling (BTBT) of LTFET was investigated using numerical simulation and band diagram analysis. It was found that quantum confinement effect significantly affects the BTBT mechanism of LTFET devices.