• Explosives and Blasting
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• v.26 no.2
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• pp.38-44
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• 2008

Recently, planning road construction in South Korea is focused on upgrading of the existing road by rerouting or restructuring. For this, roads under current construction in Korea go for more straight in its alignments and routing. Straight routing makes it all the more required to construct many mountain tunnels and bridges in Korea where mountains are so widely spread. Some portal of mountain tunnel is not rarely planed at high steep slope of mountain valley where it is not easy to secure working space for tunnel excavation. Reverse excavation is an alternative measure for excavation of tunnel portal at high steep slope. Construction in reverse excavation method has three important points requiring careful consideration: 1)planning of pilot tunnel in proper width, height, and length etc., 2)measure against the effect of one-side earth pressure to the direction of tunnel portal, 3)securing tunnel safety against shallow ground condition at portal zone. This paper intends to suggest applicable range of pilot tunnel for reverse excavation at the portal zone located at high steep slope, and shows result of study on the appropriateness of a reverse excavation by means of 3D numerical analysis. Result of 3D numerical analysis for reverse excavation at high steep slope shows that pilot tunneling will be applicable to start from the point $20{\sim}25m$ before the portal from inside the tunnel.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.490.2-490.2
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• 2014

Since the general solar cells accept sun light at the front side, excluding the electrode area, electrons move from the emitter to the front electrode and start to collect at the grid edge. Thus the edge of gridline can be important for electrical properties of screen-printed silicon solar cells. In this study, the improvement of electrical properties in screen-printed crystalline silicon solar cells by contact treatment of grid edge was investigated. The samples with $60{\Omega}/{\square}$ and $70{\Omega}/{\square}$ emitter were prepared. After front side of samples was deposited by SiNx commercial Ag paste and Al paste were printed at front side and rear side respectively. Each sample was co-fired between $670^{\circ}C$ and $780^{\circ}C$ in the rapid thermal processing (RTP). After the firing process, the cells were dipped in 2.5% hydrofluoric acid (HF) at room temperature for various times under 60 seconds and then rinsed in deionized water. (This is called "contact treatment") After dipping in HF for a certain period, the samples from each firing condition were compared by measurement. Cell performances were measured by Suns-Voc, solar simulator, the transfer length method and a field emission scanning electron microscope. According to HF treatment, once the thin glass layer at the grid edge was etched, the current transport was changed from tunneling via Ag colloids in the glass layer to direct transport via Ag colloids between the Ag bulk and the emitter. Thus, the transfer length as well as the specific contact resistance decreased. For more details a model of the current path was proposed to explain the effect of HF treatment at the edge of the Ag grid. It is expected that HF treatment may help to improve the contact of high sheet-resistance emitter as well as the contact of a high specific contact resistance.

• Journal of the Korean Magnetics Society
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• v.16 no.6
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• pp.279-282
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• 2006

Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic NiFeSiB free layers, were investigated. The NiFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with the emphasis being given to obtaining an understanding of the effect of the amorphous free layer on the switching characteristics of the MTJs. $Ni_{16}Fe_{62}Si_{8}B_{14}$ has a lower saturation magnetization ($M_{s}:\;800\;emu/cm^{3}$) than $Co_{90}Fe_{10}$ and a higher anisotropy constant ($K_{u}:\;2700\;erg/cm^{3}$) than $Ni_{80}Fe_{20}$. The $Si/SiO_{2}/Ta$ 45/Ru 9.5/IrMn 10/CoFe $7/AlO_{x}/CoFeSiB\;(t)/Ru\;60\;(in\;nanometers)$structure was found to be beneficial for the switching characteristics of the MTJ, leading to a reduction in the coercivity ($H_{c}$) and an increase in the sensitivity resulted from its lower saturation magnetization and higher uniaxial anisotropy. Furthermore, by inserting a very thin CoFe layer at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were improved more with the increase of NiFeSiB layer thickness up to 11 nm.

• The Journal of Engineering Geology
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• v.14 no.1
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• pp.81-91
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• 2004

The objective of this study is the evaluation of the tunneling effect on the goundwater-surface water interaction. The designed tunnel line is laid beneath the Hapo-cheon, which runs throughout the study area. And, the pre-evaluation of the tunnel-influence on the Gapo-cheon is urgently needed. However, it is very difficult to find out the similar domestic and/or foreign cases. In this study, the numerical modeling technique was not considered because of the insufficient data. Instead of the numerical modeling, the measurement and analysis of the stream flow rates 5 different points were adopted to evaluate the influence of the tunnel construction on the Gapo-cheon. Based on the analysis of flow monitoring data, it can be concluded that 39% of flow rate in Gapo-cheon is contributed by the groundwater discharge, as baseflow and the construction of tunnel can seriously decrease the flow rate in Gapo-cheon.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.406-406
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• 2010

일반적으로, 나노스케일의 MOS 소자에서는 게이트 절연체 두께가 감소함에 따라 tunneling effect의 증가로 인해 PID (plasma induced damage)로 인한 소자 특성 저하 현상을 감소하는 추세로 알려져 있다. 하지만 요즘 많이 사용되고 있는 high-k 게이트 절연체의 경우에는 오히려 더 많은 charge들이 trapping 되면서 PID가 오히려 더 심각해지는 현상이 나타나고 있다. 이러한 high-k 게이트 식각 시 현재는 주로 Hf-based wet etch나 dry etch가 사용되고 있지만 gate edge 영역에서 high-k 게이트 절연체의 undercut 현상이나 PID에 의한 소자특성 저하가 보고되고 있다. 본 연구에서는 이에 차세대 MOS 소자의 gate stack 구조중 issue화 되고 있는 metal gate 층과 gate dielectric 층의 식각공정에 각각 중성빔 식각과 중성빔 원자층 식각을 적용하여 전기적 손상 없이 원자레벨의 정확한 식각 조절을 해줄 수 있는 새로운 two step 식각 공정에 대한 연구를 진행하였다. 먼저 TiN metal gate 층의 식각을 위해 HBr과 $Cl_2$ 혼합가스를 사용한 중성빔 식각기술을 적용하여 100 eV 이하의 에너지 조건에서 하부층인 $HfO_2$와 거의 무한대의 식각 선택비를 얻었다. 하지만 100 eV 조건에서는 낮은 에너지에 의한 빔 스케터링으로 실제 패턴 식각시 etch foot이 발생되는 현상이 관찰되었으며, 이를 해결하기 위하여 먼저 높은 에너지로 식각을 진행하고 $HfO_2$와의 계면 근처에서 100 eV로 식각을 해주는 two step 방법을 사용하였다. 그 결과 anistropic 하고 하부층에 etch stop된 식각 형상을 관찰할 수 있었다. 다음으로 3.5nm의 매우 얇은 $HfO_2$ gate dielectric 층의 정확한 식각 깊이 조절을 위해 $BCl_3$와 Ar 가스를 이용한 중성빔 원자층 식각기술을 적용하여 $1.2\;{\AA}$/cycle의 단일막 식각 조건을 확립하고 약 30 cycle 공정시 3.5nm 두께의 $HfO_2$ 층이 완벽히 제거됨을 관찰할 수 있었다. 뿐만 아니라, vertical 한 식각 형상 및 향상된 표면 roughness를 transmission electron microscope(TEM)과 atomic force microscope (AFM)으로 관찰할 수 있었다. 이러한 중성빔 식각과 중성빔 원자층 식각기술이 결합된 새로운 gate recess 공정을 실제 MOSFET 소자에 적용하여 기존 식각 방법으로 제작된 소자 결과를 비교해 본 결과 gate leakage current가 약 one order 정도 개선되었음을 확인할 수 있었다.

• Geomechanics and Engineering
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• v.35 no.1
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• pp.29-39
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• 2023

As the intensity of urban underground space development increases, more and more tunnels are planned and constructed, and sometimes it is inevitable to encounter situations where tunnels have to underpass the river embankments. Most previous studies involved tunnels passing river embankments perpendicularly or with large intersection angle. In this study, a project case where two EPB shield tunnels with 8.82 m diameter run parallelly underneath a river embankment was reported. The parallel length is 380 m and tunnel were mainly buried in the moderate / slightly weathered clastic rock layer. The field monitoring result was presented and discussed. Three-dimensional back-analysis were then carried out to gain a better understanding the interaction mechanisms between shield tunnel and embankment and further to predict the ultimate settlement of embankment due to twin-tunnel excavation. Parametrical studies considering effect of tunnel face pressure, tail grouting pressure and volume loss were also conducted. The measured embankment settlement after the single tunnel excavation was 4.53 mm ~ 7.43 mm. Neither new crack on the pavement or cavity under the roadbed was observed. It is found that the more degree of weathering of the rock around the tunnel, the greater the embankment settlement and wider the settlement trough. Besides, the latter tunnel excavation might cause larger deformation than the former tunnel excavation if the mobilized plastic zone overlapped. With given geometry and stratigraphic condition in this study, the safety or serviceability of the river embankment would hardly be affected since the ultimate settlement of the embankment after the twin-tunnel excavation is within the allowable limit. Reasonable tunnel face pressure and tail grouting pressure can to some extent suppress the settlement of the embankment. The recommended tunnel face pressure and tail grouting pressure are 300 kPa and 550 kPa in this study, respectively. However, the volume loss plays the crucial role in the tunnel-embankment interaction. Controlling and compensating the tunneling induced volume loss is the most effective measure for river embankment protection. Additionally, reinforcing the embankment with cement mixing pile in advance is an alternative option in case the predicted settlement exceeds allowable limit.

• Journal of Korean Tunnelling and Underground Space Association
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• v.25 no.6
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• pp.403-421
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• 2023

As the number of underground structures has increased in recent decades, it has become crucial to predict geological hazards ahead of a tunnel face during tunnel construction. Consequently, this study developed a finite element (FE) numerical model to simulate electrical resistivity surveys in tunnel boring machine (TBM) operations for predicting mixed ground conditions in front of tunnel faces. The accuracy of the developed model was verified by comparing the numerical results not only with an analytical solution but also with experimental results. Using the developed model, a series of parametric studies were carried out to estimate the effect of geological conditions and sensor geometric configurations on electrical resistivity measurements. The results of these studies showed that both the interface slope and the difference in electrical resistivity between two different ground formations affect the patterns and variations in electrical resistivity observed during TBM excavation. Furthermore, it was revealed that selecting appropriate sensor spacing and optimizing the location of the electrode array were essential for enhancing the efficiency and accuracy of predictions related to mixed ground conditions. In conclusion, the developed model can serve as a powerful and reliable tool for predicting mixed ground conditions during TBM tunneling.

• Journal of Korean Tunnelling and Underground Space Association
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• v.20 no.5
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• pp.855-867
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• 2018

When a weak zone exists ahead of tunnel face, the stress in the adjacent area would increase due to the longitudinal arching effect and the stability of the tunnel is affected. Therefore, it is critical to prepare a countermeasure through the investigation of the frontal weakness zone of the excavated face. Although there are several researches to predict the existence of weak zone ahead of tunnel face, such as geophysical exploration, numerical analysis and tunnel support, lack of studies on the relaxation zone depending on the width or distance from the vulnerable area. In this study, the impact of the weak zone on the formation of the relaxation zone was investigated. For this purpose, a series of laboratory test were carried out varying the width of the weak zone and the separation distance between tunnel face and weak zone. In the model test, sand with a water content of 3.8% was used to form a model ground. The model weak zone was constructed with dry sand curtains. The tunnel face was adjusted to allow a sequential excavation of upper and lower half part. load cells were installed on the bottom of the foundation and the tunnel face and measuring instruments for displacement were installed on the surface of the model ground to measure the vertical stress and surface displacements due to tunnel excavation respectively. The test results show that the width of weak zone did not affect the ground settlement while the ground subsidence drastically increased within 0.25D. The vertical stress and horizontal stress increased from 0.5D or less. In addition, the longitudinal arching effect is likely within the 1.0D zone ahead of the tunnel face, which may reduce the vertical stress in the ground following tunneling direction.