• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.1A
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• pp.134-141
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• 2007

This paper presents a frequency synthesizer(FS) for 5.2GHz/2.4GHz dual band wireless applications which is designed in a standard $0.18{\mu}m$ CMOS1P6M process. The 2.4GHz frequency is obtained from the 5.2GHz output frequency of Voltage Controlled Oscillator (VCO) by using the Switched Capacitor (SC) and the divider-by-2. Power dissipations of the proposed FS and VCO are 25mW and 3.6mW, respectively. The tuning range of VCO is 700MHz and the locking time is $4{\mu}s$. The simulated phase noise of PLL is -101.36dBc/Hz at 200kHz offset frequency from 5.0GHz with SCA circuit on.

• Journal of Magnetics
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• v.10 no.3
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• pp.122-127
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• 2005

New classes of LC resonators for micro magnetic sensor device were proposed and fabricated. The first type LC resonator (Type I) consists of a small piece of microwire and two cylindrical electrodes at the end of the microwire without direct contact to its ferromagnetic core. In type I resonator the ferromagnetic core of the microwire and cylindrical electrodes act as an inductor and two capacitors respectively to form a LC circuit. The second type LC resonator (Type II) consists of a solenoidal micro-inductor with a bundle of soft magnetic microwires as a core. The solenoidal micro-inductors fabricated by MEMS technique were $500\sim1,000\;\mu{m}$ in length with $10\sim20$ turns. A capacitor is connected in parallel to the micro-inductor to form a LC circuit. A tiny glass coated $CO_{83.2}B_{3.3}Si_{5.9}Mn_{7.6}$ microwire was fabricated by a glass-coated melt spinning technique. A supergiant magneto-impedance effect was found in a type I resonator as much as 400,000% by precise tuning frequency at around 518.51 MHz. In type II resonator the changes of inductance as a function of external magnetic field in micro-inductors with properly annealed microwire cores were varied as much as 370%. The phase angle between current and voltage was also strongly dependent on the magnetic field. The drastic increments of magnetoimpedance at near the resonance frequency were observed in both types of LC resonators. Accordingly, the sudden change of the phase angle, as large as $180^{\circ}C$, evidenced the occurrence of the resonance at a given external magnetic field.

• Korean Journal of Materials Research
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• v.31 no.3
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• pp.115-121
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• 2021

MnO2 can be potentially utilized as an electrode material for redox capacitors. The deposition of MnO2 with poor electrical conductivity onto porous carbons supplies them with additional conductive paths; as a result, the capacitance of the electrical double layer formed on the porous carbon surface can be utilized together with the redox capacitance of MnO2. However, the obtained composites are not generally suitable for industrial production because they require the use of expensive porous carbons and/or inefficient fabrication methods. Thus, to develop an effective preparation procedure of the composite, a suitable structure of porous carbons must be determined. In this study, MnO2/C composites have been prepared from activated carbon gels with various pore sizes, and their electrical properties are investigated via cyclic voltammetry. In particular, mesoporous carbons with a pore size of around 20 nm form a composite with a relatively low capacitance (98 F/g-composite) and poor rate performance despite the moderate redox capacitance obtained for MnO2 (313 F/g-MnO2). On the other hand, using macro-porous carbons with a pore size of around 60 nm increases the MnO2 redox capacitance (399 F/g-MnO2) as well as the capacitance and rate performance of the entire material (203 F/g-composite). The obtained results can be used in the industrial manufacturing of MnO2/C composites for supercapacitor electrodes from the commercially available porous carbons.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.12
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• pp.1069-1077
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• 2011

In this paper, a design and fabrication of a miniaturized 2.5 GHz 8 W power amplifier using selectively anodized aluminum oxide(SAAO) substrate are presented. The process of SAAO substrate is recently proposed and patented by Wavenics Inc. which uses aluminum as wafer. The selected active device is a commercially available GaN HEMT chip of TriQuint company, which is recently released. The optimum impedances for power amplifier design were extracted using the custom tuning jig composed of tunable passive components. The class-F power amplifier are designed based on EM co-simulation of impedance matching circuit. The matching circuit is realized in SAAO substrate. For integration and matching in the small package module, spiral inductors and single layer capacitors are used. The fabricated power amplifier with $4.4{\times}4.4\;mm^2$ shows the efficiency above 40 % and harmonic suppression above 30 dBc for the second(2nd) and the third(3rd) harmonic at the output power of 8 W.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.1
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• pp.114-124
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• 2011

In this paper, we present a 2 GHz compact analog phase shifter with linear phase-tune characteristic. The compact phase shifter was designed base on a lumped all pass network and implemented using a ceramic substrate fabricated with thin-film technique. For a linear phase-tune characteristic, a capacitance of the varactor diode for a tuning voltage was linearized by connecting series capacitor and subsequently produced an almost linear capacitance change. The inductor and bias circuit in the all pass network was implemented using a spiral inductors for small size, which results in the size reduction to $4\;mm{\times}4\;mm$. In order to measure the phase shifter using the probe station, two CPW pads are included at the input and output. The fabricated phase shifter showed an insertion loss of about 4.2~4.7 dB at 2 GHz band and a total $79^{\circ}$ phase change for DC control voltage from 0 to 5 V, and showed linear phase-tune characteristic as expected in the design.

• Journal of Adhesion and Interface
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• v.23 no.2
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• pp.53-58
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• 2022

Here, the surface characteristics of the dielectric were controlled by introducing the self-assembled monolayers (SAMs) as the intermediate layers on the surface of the AlOx dielectric, and the electrical performances of the organic charge modulated transistor (OCMFET) were significantly improved. The organic intermediate layer was applied to control the surface energy of the AlOx gate dielectric acting as a capacitor plate between the control gate (CG) and the floating gate (FG). By applying the intermediate layers on the gate dielectric surface, and the field-effect mobility (μ_OCMFET) of the OCMFET devices could be efficiently controlled. We used the four kinds of SAM materials, octadecylphosphonic acid (ODPA), butylphosphonic acid (BPA), (3-bromopropyl)phosphonic acid (BPPA), and (3-aminopropyl)phosphonic acid (APPA), and each μ_OCMFET was measured at 0.73, 0.41, 0.34, and 0.15 cm2V-1s-1, respectively. The results could be suggested that the characteristics of each organic SAM intermediate layer, such as the length of the alkyl chain and the type of functionalized end-group, can control the electrical performances of OCMFET devices and be supported to find the optimized fabrication conditions, as an efficient sensing platform device.