• 한국재료학회지
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• 제29권4호
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• pp.241-251
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• 2019

There are several manufacturing techniques for developing thermionic cathodes for vacuum ultraviolet(VUV) ionizers. The triple alkaline earth metal emitters(Ca-Sr-Ba) are formulated as efficient and reliable thermo-electron sources with a great many different compositions for the ionizing devices. We prepare two basic suspensions with different compositions: calcium, strontium and barium. After evaluating the electron-emitting performance for europium, gadolinium, and yttrium-based cathodes mixed with these suspensions, we selected the yttrium for its better performance. Next, another transition metal indium and a lanthanide metal neodymium salt is introduced to two base emitters. These final composite metal emitters are coated on the tungsten filament and then activated to the oxide cathodes by an intentionally programmed calcination process under an ultra-high vacuum(${\sim}10^{-6}torr$). The performance of electron emission of the cathodes is characterized by their anode currents with respect to the addition of each element, In and Nd, and their concentration of cathodes. Compared to both the base cathodes, the electron emission performance of the cathodes containing indium and neodymium decreases. The anode current of the Nd cathode is more markedly degraded than that with In.

• 한국광학회지
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• 제26권3호
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• pp.162-167
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• 2015

본 논문에서는 적외선 파장대에서 렌즈의 변조전달함수(MTF)를 칼날 주사방식으로 측정하는 적외선 MTF 측정장치를 구성하고 평가하였다. 측정장치는 물체부, 평행광을 만들어주는 시준부, 형성된 상을 분석하는 분석부로 나뉜다. 광원으로는 텅스텐 필라멘트 광원을 사용하였으며 중적외선 영상을 검출하기 위해 MCT를 사용하였다. 이 장치를 사용하여 ZnSe 재질의 f 수가 5인 표준렌즈의 MTF를 중적외선 파장대인 $3{\sim}5{\mu}m$에서 측정하고 Zemax 프로그램을 통해 계산한 이론값과 측정값 차이를 비교하여 차단주파수(Cut-off frequency)인 50 1/mm까지 전구간에서 ${\pm}0.035$이내임을 확인하였다. 또한 측정값의 신뢰도를 확인하기 위한 A형 측정불확도를 계산한 결과 MTF의 대표 공간 주파수인 20 1/mm에서 0.002으로 동일한 조건 하에서 측정 시 측정값의 변화가 거의 없음을 알 수 있었다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2005년도 제17회 워크샵 및 추계학술대회
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• pp.561-566
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• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.