• 한국분말재료학회지
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• 제9권3호
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• pp.174-181
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• 2002

Nanosized tungsten carbide powders were synthesized by the chemical vapor condensation(CVC) process using the pyrolysis of tungsten hexacarbonyl($W(CO)_6$). The effect of CVC parameters on the formation and the microstructural change of as-prepared powders were studied by XRD, BET and TEM. The loosely agglomerated nanosized tungsten-carbide($WC_{1-x}$) particles having the smooth rounded tetragonal shape could be obtained below $1000^{\circ}C$ in argon and air atmosphere respectively. The grain size of powders was decreased from 53 nm to 28 nm with increasing reaction temperature. The increase of particle size with reaction temperature represented that the condensation of precursor vapor dominated the powder formation in CVC reactor. The powder prepared at $1000^{\circ}C$ was consisted of the pure W and cubic tungsten-carbide ($WC_{1-x}$), and their surfaces had irregular shape because the pure W was formed on the $WC_{1-x}$ powders. The $WC_{1-x}$ and W powders having the average particles size of about 5 nm were produced in vacuum.

• 한국분말재료학회지
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• 제11권2호
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• pp.124-129
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• 2004

Nanosized WC and WC-Co powders were synthesised by chemical vapor condensation(CVC) process using the pyrolysis of tungsten hexacarbonyl(W(CO)$_6$) and cobalt octacarbonyl(Co$_2$(CO)$_8$). The microstructural changes and phase evolution of the CVC powders during post heat-treatment were studied using the XRD, FE-SEM, TEM, and ICP-MS. CVC powders were consisted of the loosely agglomerated sub-stoichimetric WC$_{1-x}$ and the long-chain Co nanopowders. The sub-stochiometric CVC WC and WC-Co powders were carburized using the mixture gas of CH$_4$-H$_2$ in the temperature range of 730-85$0^{\circ}C$. Carbon content of CVC powder controlled by the gas phase carburization at 85$0^{\circ}C$ was well matched with the theoretical carbon sioichiometry of WC, 6.13 wt％. During the gas phase carburization, the particle size of WC increased from 20 nm to 40 nm and the long chain structure of Co powders disappeared.

• Korean Chemical Engineering Research
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• 제49권4호
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• pp.405-410
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• 2011

본 연구에서는 화학 증착법을 이용하여 텅스텐 산화물을 제조한 후 기판 온도에 따른 성막 특성을 분석하고, 성막 된 텅스텐 산화물을 전기 변색 소자 제조에 응용하여 소자 특성을 살펴보았다. 증착 온도 $300^{\circ}C$ 이상에서 최대 성막속도($8{\mu}m/min$)를 얻을 수 있었으며, $275^{\circ}C$ 이하에서는 표면 반응 율속 특성을 보였고 이때 겉보기 활성화 에너지 값은 45.9 kJ/mol이였다. 성막 된 텅스텐 산화물은 $275^{\circ}C$ 이하에서는 비정질막이, 그 이상 온도에서는 결정질 막이 형성되었다. 전기 변색 소자 적용시 유리한 비정질막이 성막되는 조건에서 증착 온도 및 두께 변화에 따른 전기 변색 특성을 평가하였다. 증착 온도가 동일한 경우 두께가 두꺼울수록 그리고 두께가 일정한 경우는 증착 온도가 낮을수록 변색 효율 측면에서 유리한 결과를 얻었다.