• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.6
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• pp.1196-1200
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• 2009

This paper proposed a tunable band pass filter. It is two-poles direct capacitive coupled resonator band pass filter which the capacitors of parallel resonators are changed by varactor diodes. The DC bias controls to change the value of capacitance in the parallel resonator for tunning the pass band. To validate the proposed design method, we fabricated the band pass filter which has tunable center frequency from 200MHz to 245MHz.

• 한국정보통신설비학회:학술대회논문집
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• 2004.08a
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• pp.11-14
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• 2004

In this paper, a novel tunable bandpass filter using tunable series inductors and MEMS switches for wireless LAN applications was proposed. The proposed tunable filter was fabricated using a micromachining technology and performances of the fabricated filter were estimated. The filter consists of spiral inductors, MIM capacitors and direct-contact type MEMS switches, and its frequency tunability is achieved by changing the inductance that is induced by ON/OFF actuations of the MEMS switches. The actuation voltage of the MEMS switches was 58 V, and the measured center frequencies were 2.55 GHz and 5.1 GHz, respectively. The passband insertion loss and 3-dB bandwidth were 4.2 dB and 22.5 % at 2.55 GHz, and 5.2 dB and 23.5 % at 5.1 GHz, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.3
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• pp.262-268
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• 2010

In this paper, a high power active tunable bandpass filter made of dielectric resonators and varactor diodes is designed using the active capacitance circuit generating negative resistance for tuning cellular TX, RX band. An active capacitance circuit's series feedback circuit using GaAs HFET whose $P_{1dB}$ is 32 dBm is used for compensating the losses from the varactor diodes of the tunable bandpass filter. The tuning elements, the varactor diodes are used as the back-to-back configuration to achieve the high power performance, The designed active capacitance circuit improves the insertion loss characteristics. The designed 2-stage active tunable dielectric bandpass filter at cellular band can cover from 800 MHz to 900 MHz. The insertion losses at 836 MHz and 881.5 MHz with 25 MHz bandwidth are 0.48 dB and 0.39 dB, respectively. The $P_{1dB}$ of the designed bandpass filter at TX and RX band are measured as 19.5 dBm and 23 dBm, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.4
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• pp.300-306
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• 2004

This paper reports a novel tunable bandpass filter using two-state switched inductor with direct-contact MEMS switches for wireless LAN applications. In our filter configuration, the switched inductor is implemented to obtain more stable and much larger frequency tuning ratio compared with variable capacitor-based tunable filter. The proposed tunable filter was fabricated using a micromachining technology and electrical performances of the fabricated filter were measured. The filter consists of spiral inductors, MIM capacitors and direct-contact type MEMS switches, and its frequency tunability is achieved by changing the inductance that is induced by ON/OFF actuations of the MEMS switches. The actuation voltage of the MEMS switches was measured of 58 V, and they showed the insertion loss of 0.1 dB and isolation of 26.3 dB at 2 GHz, respectively. The measured center frequencies of the fabricated filter were 2.55 GHz and 5.1 GHz, respectively. The passband insertion loss and 3-dB bandwidth were 4.2 dB and 22.5 % at 2.55 GHz, and 5.2 dB and 23.5 % at 5.1 GHz, respectively.

• Journal of electromagnetic engineering and science
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• v.1 no.2
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• pp.166-172
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• 2001

A novel RF tunable bandpass filter structure using dielectric resonators and varactor diodes is considered for the optimization to achieve constant bandwidth with minimum passband insertion loss. The coupling between resonators is realized by coupling windows and series lumped L, C elements are used to realize the input/output stage couplings. A 5 poles, 0.01 dB ripple Chebyshev type filter tuned from 800 MHz~900 MHz is designed and presented in this paper. The passband bandwidth for the design is 10 MHz (fractional bandwidth = 1.2 %). Experimental results show that the 3 dB passband bandwidth variation is 12.04 MHz~12.16 MHz (less than 1 %) and passband insertion loss is 15 dB~7 dB depending on the tuning voltages.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.523-526
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• 2002

This paper presents the simulation of Au / $Ba_{x}$S $r_{1-x}$ Ti $O_3$(BSTO) / Magnesium oxide (MgO) multi-layered and electrically tunable band-pass filters (BPFs) by using high frequency structure simulator (HFSS). This model is a two-pole microstrip edge coupled filter. The filter was designed fur a center frequency about 5.8 GHz. The tunabillity of the filter is achieved using the nonlinear dc electric-field dependence on the relative dielectric constant of BSTO frroelectric thin film. This work seems very promising for future wireless communication systems....

• Korean Journal of Optics and Photonics
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• v.14 no.6
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• pp.674-679
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• 2003

We fabricated erbium-doped fiber ring laser with a new structure that can operate in C- & L-band wavelength region. The wave-length of the laser can be tuned continuously over 102 nm between 1510.4-1612.6 nm by insertion of the fiber Fabry-Perot tunable filter (FFP-TF) in the ring cavity. By use of the wavelength tunable characteristics of our fiber laser, we measured absorption spectra of more than fifty transition lines of the acetylene ($^{13}$ C$_2$H$_2$) molecule with high signal to noise ratio (SNR).

• Korean Journal of Optics and Photonics
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• v.28 no.6
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• pp.346-350
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• 2017

A tunable filter incorporating an apodized grating with a high-refractive-index polymer layer is demonstrated. In the apodized tunable filter, the reflectivity is decreased compared to that of a uniform grating, because of the gradually decreased grating depth. To increase the reflectivity of the apodized grating, a polymer of high refractive index is adopted for the apodized grating, and then high reflectivity is obtained while maintaining a narrow bandwidth. The apodized tunable filter exhibits a 3-dB bandwidth of 0.51 nm and a 20-dB bandwidth of 1.05 nm, with 98.5% reflection.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.166-176
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• 2007

Radio frequency (RF) microelectromechanical systems (MEMS) have been pursued for more than a decade as a solution of high-performance on-chip fixed, tunable and reconfigurable circuits. This paper reviews our research work on RF MEMS switches and switching circuits in the past five years. The research work first concentrates on the development of lateral DC-contact switches and capacitive shunt switches. Low insertion loss, high isolation and wide frequency band have been achieved for the two types of switches; then the switches have been integrated with transmission lines to achieve different switching circuits, such as single-pole-multi-throw (SPMT) switching circuits, tunable band-pass filter, tunable band-stop filter and reconfigurable filter circuits. Substrate transfer process and surface planarization process are used to fabricate the above mentioned devices and circuits. The advantages of these two fabrication processes provide great flexibility in developing different types of RF MEMS switches and circuits. The ultimate target is to produce more powerful and sophisticated wireless appliances operating in handsets, base stations, and satellites with low power consumption and cost.

• Journal of IKEEE
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• v.28 no.1
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• pp.72-77
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• 2024

In this paper, a triple-mode frequency-tunable filter is proposed to meet the recent demands of various frequency bands of mobile communication services. This filter has a tunable structure that can adjust the resonance frequency using a variable capacitor. To improve the quality factor, a SIW(Substrate Integrated Waveguide) structure was introduced and a structure that induces three resonance modes was implemented through a circular hole located in the center. The change in electric field distribution and resonance frequency by the variable capacitor was simulated using HFSS, and the change in electric field distribution and resonance frequency of Triple Mode mode was confirmed.