• Title/Summary/Keyword: Tunability

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The Effect of Perimeter on Characteristics of Frequency-Agile Tunable Capacitors

  • Lee, Young Chul
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.10a
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    • pp.561-563
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    • 2012
  • In this work, tunable capacitors using a finger-type electrode are designed and characterized for frequency-agile RF circuit applications. Their top electrodes with different area and line width are designed in types of the finger for a long conducting perimeter which results in enhanced fringing-electric fields in order to improve their tunability. The tunable varactors were fabricated on a quartz substrate employing a multi-layer dielectric of a para/ferro/para-electric thin film. Compared to the conventional capacitor, finger-type capacitors are characterized in terms of effective capacitance and tunablility. Their effective capacitance and tunability with the long perimeter increase 24~40% and 7~12%, respectively, due to enhanced fringing electric fields from 1 to 2.5 GHz, compared to the conventional ones.

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A Novel Inter-Digital Tunable Capacitor for Low-Operation Voltage Applications

  • Lee, Young Chul
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.10a
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    • pp.586-589
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    • 2012
  • In this paper, a tunable capacitor like an interdigital one is presented for low-voltage applications. In order to reduce operation voltage by enhancing fringing electric fields, two finger-patterned electrodes are vertically separated by employing a multi-layer thin film dielectric of a para-/ferro-/para-electrics without spacing between electrodes. The proposed tunable capacitor was fabricated on a quartz wafer and its characteristics are analyzed in terms of effective capacitance and tunability with a function of applied voltages, compared to the conventional interdigital capacitor (IDC). At 8V and 2 GHz, the proposed tunable capacitor shows the tunability of 18 % that is 10.3 % higher than that of the compared one.

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Dielectric Properties of $Al_{2}O_{3}-Doped$ BSCT Thick Films ($Al_{2}O_{3}$가 첨가된 BSCT 후막의 유전특성)

  • Lee, Sung-Gap;Kim, Chang-Il;Kim, Jeong-Phil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.338-341
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    • 2002
  • $(Ba_{1-x}Sr_{0.4}Ca_x)TiO_{3}$ (x=0.10, 0.15, 0.20) powders were prepared by the sol-gel method and BSCT thick films were fabricated by the screen-printing method. Their structural and dielectric properties were investigated with variation of composition ratio and $Al_{2}O_{3}$ doping contents. As results of the X-ray diffraction and microstructure analysis, the grain size of BSCT thick films was decreased with increasing $Al_{2}O_{3}$ amount. The thickness of BSCT thick films by 4-coating/drying is about $110{\sim}120{\mu}m$. The tunability increased with decreasing Ca content, and the BSCT(50/40/10) specimen doped with 1.0wt% $Al_{2}O_{3}$ showed the highest value of 12.94% at 5kV /cm.

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A Real-time Tinnitus Treatment System Using Tinnitus Frequency Removal and Adjacent Frequency Amplification on Mobile Device

  • Park, Dae-Hyun;Kim, Yoon
    • Journal of the Korea Society of Computer and Information
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    • v.20 no.11
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    • pp.111-118
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    • 2015
  • In this paper, we propose a new tinnitus treatment system that removes the frequency band where the ear noises is generated and amplifies the around frequency bands in order to treat a nonstop buzzing in the ears, that is one among the disease commonly generated in modern people. Mostly the tinnitus is generated by the tunability with the neighboring nerves while the part of the cerebral cortex which is unable to react to the stimuli by the sound of the specific frequency band reacts to other frequency band. Therefore, the excitability activity by the tunability of the cerebral cortex is suppressed and the remedial value is gotten by removing the tinnitus frequency band, and the around frequency bands are amplified to strengthen the remedial value. Experimental results show that the tinnitus can be treated conveniently if the patients use the android application which the proposed technique is applied to.

Fabrications and properties of Bismuth Zinc Niobate Thin Films by Sputtering (스퍼터링법을 이용한 Bismuth Zinc Niobate 박막의 제작 및 특성)

  • Kim, Jae-Hyun;Jeong, Sang-Hyun;Jung, Soon-Won;Choi, Haeng-Chul;Kim, Kwang-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.18-19
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    • 2006
  • The bismuth zinc niobate(BZN) pyrochlore thin films were fabricated on Pt(111)/Ti/$SiO_2$/p-Si(100) substrates using a reactive rf magnetron sputtering method at the conditions of working gas ratio Ar:$O_2$=90:10, substrate temperate $R.T{\sim}600^{\circ}C$, rf power 50 W. The dielectric constant, tunability, leakage current density and crystallinity of thin films changed with a substrate temperate. The BZN pyrochlore thin films sputtered with a substrate temperature of $600^{\circ}C$ and RTA at $800^{\circ}C$ showed a leakage current density lower than $10^{-8}\;A/cm^2$ at the range of ${\pm}300\;kV/cm$.

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Dielectric properties of (100)-oriented $Ba_{0.6}Sr_{0.4}TiO_3$ Thin Films grown on MgO (100) thin films for phase-shifters (Phase-shifters 응용을 위한 MgO 박막위에 성장된 BST(100) 박막의 유전적 특성)

  • Lee, Byeong-Ki;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.663-666
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    • 2004
  • In this paper, we have investigated the structure and dielectric properties of the $(Ba_{0.6}Sr_{0.4})TiO_3$ (BST) thin films film fabricatedon MgO(100)/Si substrate by an alkoxide-based sol-gel method. Both the structure and morphology of films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). For the MgO(100)/Si substrates, the BST thin films exhibited highly (100) orientation. The highly (100)-oriented BST thin films showed high dielectric constant, tunability, and figure of merit (FOM). The dielectric constants, dielectric loss and tunability of the BST thin films annealed at 700 C deposited on the MgO(100)/Si substrates measured at 10 kHz were 515.9, 0.0082, and 54.3 %, respectively.

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Characterization of a Tunable Flattened-Pass-band Fiber Comb Filter

  • Lee, Yong Wook;Jung, Jaehoon
    • Current Optics and Photonics
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    • v.3 no.2
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    • pp.111-118
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    • 2019
  • The optical characteristics of a tunable flattened-pass-band fiber comb filter, based on the polarization-diversified loop configuration, are investigated using the $Poincar{\acute{e}}$-sphere representation. In the design process, the spectral flatness is checked quantitatively, and the tunability of the pass band is demonstrated experimentally. Theoretical calculations show that the filter also exhibits desirable dispersion and polarization properties. The orientation angles of rotatable wave plates for the wavelength tunability of the filter are obtained. Furthermore, we elaborate on the multiple angle loci produced by degeneracies through the combination of optical elements within the loop of the filter.

A High Tunable Capacitor Embedding Its Electrodes in Tunable Thin Film Dielectrics (가변형 박막 유전체에 전극을 임베디드 시킨 고가 변형 커패시터)

  • Lee Young-Chul;Hong Young-Pyo;Ko Kyung-Hyun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.9 s.112
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    • pp.860-865
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    • 2006
  • In this paper, a novel tunable inter-digital capacitor using dielectric tunable $Bi_2O_3-ZnO-Nb_2O_5(BZN)$ pyrochlore thin films is proposed. In order to improve the tunability and reduce DC bias voltage using the fringing electric field, the electrodes of the inter-digital capacitor are embedded in the thin film. Designed results using a 2.5 D simulator show that the tunability of the proposed inter-digital capacitor improves by 10 %, compared to the conventional inter-digital capacitor. The proposed IDC, which is based on the simulation results, was fabricated, using the BZN thin film deposited by a reactive RF magnetron sputtering on the on the silicon substrate. The fabricated inter-digital capacitor shows the maximum tunability of 50 % at 5.8 GHz and 18 V DC applied.

Microwave Properties and Microstructures of (Ba,Sr)TiO3 Thin Films on Various Substrates with Annealing Temperature (다양한 기판위에 증착된 BST 박막의 열처리 온도에 따른 마이크로파 유전성질과 미세구조 변화)

  • Cho, Kwang-Hwan;Kang, Chong-Yun;Yoon, Seok-Jin;Kim, Hyun-Jai
    • Korean Journal of Materials Research
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    • v.17 no.7
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    • pp.386-389
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    • 2007
  • The dielectric properties of $(Ba_{0.5}Sr_{0.5})TiO_3$ ferroelectric thin films have been investigated according to the substrates in order to optimize the their properties. MgO, r-plane sapphire, and poly-crystalline sapphire (Alumina) substrates have been used to deposite $(Ba_{0.5}Sr_{0.5})TiO_3$ ferroelectric thin films by RF magnetron sputtering. The BST thin films deposited on the single crystal (100)MgO substrates have high tunability and low dielectric loss. These results are caused by a low misfit between the lattice parameters of the BST films and the substrate. The BST films deposited on r-plane sapphire have relatively high misfit, and the tunability of 17% and dielectric loss of 0.0007. To improve the dielectric properties of the BST films, the post-annealing methods has been introduced. The BST films deposited on (100)MgO, (1102)r-plane sapphire, and poly-crystalline sapphire substrates have best properties in post-annealing conditions of $1050^{\circ}C$, $1100^{\circ}C$, and $1150^{\circ}C$, respectively. The different optimal post-annealing conditions have been found according to the different misfits between the films and substrates, and thermal expansion coefficients. Moreover, the films deposited on alumina substrate which is relatively cheap have a good tunability properties of 23% by the post-annealing.

The Effect of Top-electrode Perimeter on the Tunability of Tunable Varactors Based on a BZN/BST/BZN Thin Film (BZN/BST/BZN 박막에 기초한 가변 바렉터의 상부전극 가장자리 길이에 대한 가변성 영향)

  • Lee, Young Chul;Lee, Baek Ju;Ko, Kyung Hyun
    • Journal of Advanced Navigation Technology
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    • v.17 no.6
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    • pp.720-725
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    • 2013
  • This paper has presented that fringing-electric fields enhanced by a finger-type electrode can improve the tunability of the tunable capacitor. Its top electrodes with different area and line width are designed in types of the finger for a long conducting perimeter. The tunable varactors were fabricated on a quartz substrate employing a multi-layer dielectric of a para/ferro/para-electric thin film. Compared to the conventional capacitor, finger-type capacitors are analyzed in terms of effective capacitance and tunablility. Their effective capacitance and tunability of the varactors with the long perimeter increase 24~40 % and 7~12 %, respectively, due to enhanced fringing electric fields from 1 to 2.5 GHz.