• 제목/요약/키워드: Triple Layer

검색결과 166건 처리시간 0.024초

박막 Si태양전지 응용을 위한 유리기판 위의 AZO-Ag 이중구조 배면전극의 전기광학적 특성 (Electrical and optical properties of back reflecting layer with AZO-Ag bilayer structure on a glass substrate for thin film Si solar cell applications)

  • 박재철;홍창우;최용성;이종호;김태원
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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    • pp.124.2-124.2
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    • 2011
  • 현재 박막형 태양전지는 실리콘계가 주류를 이루고 있으며, 유리기판 또는 유연성 기판에 비정질 실리콘 박막을 형성시킨 태양전지와 실리콘 기판 양면에 태양전지를 형성하는 방법 등 효율을 극대화시킨 이종접합 태양전지 등이 연구되고 있다. 예컨대 밴드갭이 서로 다른 박막들 간의 이종접합을 이용한 tandem 구조 및 triple 구조의 Si 박막 태양전지의 경우 13%대 변환효율을 나타낸다고 보고된 바 있다. 본 연구에서는 비정질 Si 박막 태양전지 내 흡수층의 효율을 최대화하기 위하여 AZO/Ag 이중구조 박막의 특성에 관한 연구를 수행하고자 한다. combinatorial sputtering system을 이용하여 AZO/Ag 이중구조 박막을 제작하였으며 타겟으로는 4-inch target(Ag, 2wt% Al2O3 doped ZnO)이 사용되었다. 유리기판 상에 combinatorial sputter system으로 상온에서 제작된 Ag 박막의 두께는 25nm로 성장시켰으며 연속공정으로 AZO 박막을 제작하였고, AZO 박막은 100~500nm의 두께경사를 나타내었다. 이 때 유리기판상에 성장된 Ag/AZO 박막의 면저항은 약 $2{\Omega}/{\Box}$ 값을 나타내었다. 본 발표에서는 AZO/Ag 이중 구조 박막의 우수한 전기적 특성을 기반으로 표면 거칠기 및 반사도 특성 등에 관하여 추가적으로 토론한다.

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Triple Layer Passivation for Organic Thin-Film Transistors

  • Ryoo, Ki-Hyun;Lee, Cheon-An;Jin, Sung-Hun;Jung, Keum-Dong;Park, Chang-Bum;Lee, Jong-Duk;Shin, Hyung-Cheol;Park, Byung-Gook
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1310-1312
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    • 2005
  • Passivation of organic thin-film transistors (OTFTs) using organic and metal thin-film was presented. Parylene-C and titanium were used as an organic and metal layer, respectively. With the proposed passivation method the degradation of electric parameters of OTFTs was relieved compared with non-passivated devices. Several electric parameters such as on/off current, field-effect mobility, and threshold voltage were shown.

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Si 기판에서의 광소자 응용을 위한 Ge 박막의 Transfer 기술개발 (Ge thin layer transfer on Si substrate for the photovoltaic applications)

  • 안창근;조원주;임기주;오지훈;양종헌;백인복;이성재
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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    • pp.743-746
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    • 2003
  • We have successfully used hydrophobic direct-wafer bonding, along with H-induced layer splitting of Ge, to transfer 700nm think, single-crystal Ge films to Si substrates. Optical and electrical properties have been also observed on these samples. Triple-junction solar cell structures gown on these Ge/Si heterostructure templates show comparable photoluminescence intensity and minority carrier lifetime to a control structure grown on bulk Ge. When heavily doped p$^{+}$Ge/p$^{+}$Si wafer bonded heterostructures were bonded, ohmic interfacial properties with less than 0.3Ω$\textrm{cm}^2$ specific resistance were observed indicating low loss thermal emission and tunneling processes over and through the potential barrier. Current-voltage (I-V) characteristics in p$^{+}$Ge/pSi structures show rectifying properties for room temperature bonded structures. After annealing at 40$0^{\circ}C$, the potential barrier was reduced and the barrier height no longer blocks current flow under bias. From these observations, interfacial atomic bonding structures of hydrophobically wafer bonded Ge/Si heterostructures are suggested.ested.

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Flexible Hydrogen Sensor Using Ni-Zr Alloy Thin Film

  • Yun, Deok-Whan;Park, Sung Bum;Park, Yong-il
    • 한국재료학회지
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    • 제29권5호
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    • pp.297-303
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    • 2019
  • A triple-layered $PMMA/Ni_{64}Zr_{36}/PDMS$ hydrogen gas sensor using hydrogen permeable alloy and flexible polymer layers is fabricated through spin coating and DC-magnetron sputtering. PDMS(polydimethylsiloxane) is used as a flexible substrate and PMMA(polymethylmethacrylate) thin film is deposited onto the $Ni_{64}Zr_{36}$ alloy layer to give a high hydrogen-selectivity to the sensor. The measured hydrogen sensing ability and response time of the fabricated sensor at high hydrogen concentration of 99.9 % show a 20 % change in electrical resistance, which is superior to conventional Pd-based hydrogen sensors, which are difficult to use in high hydrogen concentration environments. At a hydrogen concentration of 5 %, the resistance of electricity is about 1.4 %, which is an electrical resistance similar to that of the $Pd_{77}Ag_{23}$ sensor. Despite using low cost $Ni_{64}Zr_{36}$ alloy as the main sensing element, performance similar to that of existing Pd sensors is obtained in a highly concentrated hydrogen atmosphere. By improving the sensitivity of the hydrogen detection through optimization including of the thickness of each layer and the composition of Ni-Zr alloy thin film, the proposed Ni-Zr-based hydrogen sensor can replace Pd-based hydrogen sensors.

다층 심지층처분장 열해석에 미치는 암반손상대의 영향 (Effects of Excavation Damaged Zone on Thermal Analysis of Multi-layer Geological Repository)

  • 조원진;김진섭;김건영
    • 방사성폐기물학회지
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    • 제17권1호
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    • pp.75-94
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    • 2019
  • 현재 고려되고 있는 단층 심지층처분장 개념은 부지 소요면적이 지나치게 크기 때문에, 처분밀도를 향상시키기 위한 다층 심지층처분장 개념이 제안되고 있다. 심부암반에 건설된 다층 심지층처분장 주위에 형성된 암반손상대가 심지층처분장의 온도 분포에 미치는 영향이 분석되었다. 다층 심지층처분장의 열해석에는 완충재, 뒤채움재 및 암반에서 일어나는 재포화 현상을 고려한 열-수리 모델이 사용되었다. 암반손상대의 존재는 심지층처분장의 온도 분포에 큰 영향을 미치는 것으로 나타났으며, 손상대의 크기와 열전도도 저하 정도에 따라 복층 및 삼층 심지층처분장의 최고첨두온도를 각각 최대 $7^{\circ}C$$12^{\circ}C$까지 증가시킬 수 있다. 다층 심지층처분장의 첨두온도에 영향을 크게 미치는 인자는 암반손상대에서의 열전도도 저하이며, 처분공 주위에 형성된 암반손상대가 처분터널 주변에 형성된 암반손상대보다 첨두온도에 더 큰 영향을 미친다.

An Efficient Hardware Architecture of Intra Prediction and TQ/IQIT Module for H.264 Encoder

  • Suh, Ki-Bum;Park, Seong-Mo;Cho, Han-Jin
    • ETRI Journal
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    • 제27권5호
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    • pp.511-524
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    • 2005
  • In this paper, we propose a novel hardware architecture for an intra-prediction, integer transform, quantization, inverse integer transform, inverse quantization, and mode decision module for the macroblock engine of a new video coding standard, H.264. To reduce the cycle of intra prediction, transform/quantization, and inverse quantization/inverse transform of H.264, a reduction method for cycle overhead in the case of I16MB mode is proposed. This method can process one macroblock for 927 cycles for all cases of macroblock type by processing $4{\times}4$ Hadamard transform and quantization during $16{\times}16$ prediction. This module was designed using Verilog Hardware Description Language (HDL) and operates with a 54 MHz clock using the Hynix $0.35 {\mu}m$ TLM (triple layer metal) library.

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PRODUCTION AND MACHINABILITY OF SiCp-REINFORCED AL-2014 ALLOY MATRIX COMPOSITES

  • Ciftci, I.;Sahin, Y.
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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    • pp.313-314
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    • 2002
  • SiCp-reinforced metal matrix composites (MMCs) containing 8 wt % and 16 wt % of $SiC_p-reinforced$ with 30 and $45\;{\mu}m$ in sizes were prepared by a melt stirring-squeeze casting technique. Microstructural observation showed that particle distributions were reasonably well. Turning experiments were carried out on the composites using uncoated and triple-layer coated carbide tools at various cutting speeds under a constant feed rate and depth of cut. Coated tools indicated better performance than uncoated tools for all the materials while the poor surface finish was obtained for coated tools.

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Nanoparticle plasmonics: from single molecule chemistry to materials science

  • 김지환
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.76.2-76.2
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    • 2015
  • I will present my research group's recent investigation on how the localized plasmon of a nanoparticle interacts with another plasmon, and with nearby molecules. First, I will demonstrate the use of scattering-type scanning near-field microscopy (s-SNOM) to directly visualize the capacitive / conductive coupling in dimeric nanoparticles and heterometallic nanorods. Second, I will talk about the use of gap-plasmons to locally induce photochemical reactions, and to follow chemical kinetics of individual organic molecules using the gap-plasmons. As a last topic, I will talk about the use of near-field coupling between a scanning probe and graphenes to visualize / identify the stacking domains (e. g., ABA versus ABC-type stacking in triple layer) hidden in multilayer graphenes.

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진공 증착법에 의한 Terbium Complex 박막의 제작 및 특성 연구 (Preparation of Terbium Complex Films by Vacuum Evaporation Method and Their Characterization)

  • 표상우;김영관;손병청
    • 한국응용과학기술학회지
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    • 제15권3호
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    • pp.85-90
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    • 1998
  • In this study, organic electroluminescent devices(OELD) with a structure of a glass $substrate/ITO/TPD/Tb(ACAC)_3(Phen-Cl)/Alq_3/Al$ was fabricated by vacuum evaporation method, where Tb complex was known to have green light emitting property. Electroluminescent(EL) and I-V characteristics of this structure were investigated. This triple-layer structure shows the green EL spectrum at the wavelwngth of 546nm, which is almost the same as the PL spectrum of $Pb(ACAC)_3(Phen_Cl)$. It was found in current-voltage(I-V) characteristics of the devices that the operating voltage was about 12V.

32비트 RISC/DSP CPU를 위한 고속 3포트 레지스터 파일의 설계 (High Speed Triple-port Register File for 32-bit RISC/DSP Processors)

  • 고재명;유동렬
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1998년도 추계종합학술대회 논문집
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    • pp.1165-1168
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    • 1998
  • This paper describes a 72-word by 32-bit 2-read/1-write multi-port register file, which is suitable for 32-bit RISC/DSP microprocessors. To minimize area and achieve high speed, advanced single-ended sense amplifiers are used. Each part of circuit is optimized at transistor level. The verification of functionality and timing is performed using HSPICE simulations. After modeling and validating the circuit at transistor level, it was laid out in a 0.6um 1-poly 3-metal layer CMOS technology. The simulation results show maximum operating frequency is 179MHz in worst case conditions. It contains 27,326 transistors and the size is 3.02mm by 2.20mm.

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