• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.124.2-124.2
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• 2011

현재 박막형 태양전지는 실리콘계가 주류를 이루고 있으며, 유리기판 또는 유연성 기판에 비정질 실리콘 박막을 형성시킨 태양전지와 실리콘 기판 양면에 태양전지를 형성하는 방법 등 효율을 극대화시킨 이종접합 태양전지 등이 연구되고 있다. 예컨대 밴드갭이 서로 다른 박막들 간의 이종접합을 이용한 tandem 구조 및 triple 구조의 Si 박막 태양전지의 경우 13%대 변환효율을 나타낸다고 보고된 바 있다. 본 연구에서는 비정질 Si 박막 태양전지 내 흡수층의 효율을 최대화하기 위하여 AZO/Ag 이중구조 박막의 특성에 관한 연구를 수행하고자 한다. combinatorial sputtering system을 이용하여 AZO/Ag 이중구조 박막을 제작하였으며 타겟으로는 4-inch target(Ag, 2wt% Al2O3 doped ZnO)이 사용되었다. 유리기판 상에 combinatorial sputter system으로 상온에서 제작된 Ag 박막의 두께는 25nm로 성장시켰으며 연속공정으로 AZO 박막을 제작하였고, AZO 박막은 100~500nm의 두께경사를 나타내었다. 이 때 유리기판상에 성장된 Ag/AZO 박막의 면저항은 약 $2{\Omega}/{\Box}$ 값을 나타내었다. 본 발표에서는 AZO/Ag 이중 구조 박막의 우수한 전기적 특성을 기반으로 표면 거칠기 및 반사도 특성 등에 관하여 추가적으로 토론한다.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1310-1312
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• 2005

Passivation of organic thin-film transistors (OTFTs) using organic and metal thin-film was presented. Parylene-C and titanium were used as an organic and metal layer, respectively. With the proposed passivation method the degradation of electric parameters of OTFTs was relieved compared with non-passivated devices. Several electric parameters such as on/off current, field-effect mobility, and threshold voltage were shown.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.743-746
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• 2003

We have successfully used hydrophobic direct-wafer bonding, along with H-induced layer splitting of Ge, to transfer 700nm think, single-crystal Ge films to Si substrates. Optical and electrical properties have been also observed on these samples. Triple-junction solar cell structures gown on these Ge/Si heterostructure templates show comparable photoluminescence intensity and minority carrier lifetime to a control structure grown on bulk Ge. When heavily doped p$^{+}$Ge/p$^{+}$Si wafer bonded heterostructures were bonded, ohmic interfacial properties with less than 0.3Ω$\textrm{cm}^2$ specific resistance were observed indicating low loss thermal emission and tunneling processes over and through the potential barrier. Current-voltage (I-V) characteristics in p$^{+}$Ge/pSi structures show rectifying properties for room temperature bonded structures. After annealing at 40$0^{\circ}C$, the potential barrier was reduced and the barrier height no longer blocks current flow under bias. From these observations, interfacial atomic bonding structures of hydrophobically wafer bonded Ge/Si heterostructures are suggested.ested.

• Korean Journal of Materials Research
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• v.29 no.5
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• pp.297-303
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• 2019

A triple-layered $PMMA/Ni_{64}Zr_{36}/PDMS$ hydrogen gas sensor using hydrogen permeable alloy and flexible polymer layers is fabricated through spin coating and DC-magnetron sputtering. PDMS(polydimethylsiloxane) is used as a flexible substrate and PMMA(polymethylmethacrylate) thin film is deposited onto the $Ni_{64}Zr_{36}$ alloy layer to give a high hydrogen-selectivity to the sensor. The measured hydrogen sensing ability and response time of the fabricated sensor at high hydrogen concentration of 99.9 % show a 20 % change in electrical resistance, which is superior to conventional Pd-based hydrogen sensors, which are difficult to use in high hydrogen concentration environments. At a hydrogen concentration of 5 %, the resistance of electricity is about 1.4 %, which is an electrical resistance similar to that of the $Pd_{77}Ag_{23}$ sensor. Despite using low cost $Ni_{64}Zr_{36}$ alloy as the main sensing element, performance similar to that of existing Pd sensors is obtained in a highly concentrated hydrogen atmosphere. By improving the sensitivity of the hydrogen detection through optimization including of the thickness of each layer and the composition of Ni-Zr alloy thin film, the proposed Ni-Zr-based hydrogen sensor can replace Pd-based hydrogen sensors.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.17 no.1
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• pp.75-94
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• 2019

As the present single-layer repository concept requires too large an area for the site of the repository, a multi-layer repository concept has been suggested to improve the disposal density. The effects of the excavation damaged zone around the multi-layer repository constructed in the deep host rock on the temperature distribution in the repository were analyzed. For the thermal analysis of the multi-layer repository, the hydrothermal model was used to consider the resaturation process occurring in the buffer, backfill and rock. The existence of an excavation damaged zone has a significant effect on the temperature distribution in the repository, and the maximum peak temperatures of double-layer and triple-layer repositories can rise to $7^{\circ}C$ and $12^{\circ}C$, respectively depending on the size of the excavation damaged zone and the degree of decrease of the thermal conductivity. The dominant factor affecting the peak temperature in the multi-layer repository is the decrease of thermal conductivity in the excavation damaged zone, and the excavation damaged zone formed around the deposition hole has more significant effects on the peak temperature than does the excavation damaged zone formed around the disposal tunnel.

• ETRI Journal
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• v.27 no.5
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• pp.511-524
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• 2005

In this paper, we propose a novel hardware architecture for an intra-prediction, integer transform, quantization, inverse integer transform, inverse quantization, and mode decision module for the macroblock engine of a new video coding standard, H.264. To reduce the cycle of intra prediction, transform/quantization, and inverse quantization/inverse transform of H.264, a reduction method for cycle overhead in the case of I16MB mode is proposed. This method can process one macroblock for 927 cycles for all cases of macroblock type by processing $4{\times}4$ Hadamard transform and quantization during $16{\times}16$ prediction. This module was designed using Verilog Hardware Description Language (HDL) and operates with a 54 MHz clock using the Hynix $0.35 {\mu}m$ TLM (triple layer metal) library.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.313-314
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• 2002

SiCp-reinforced metal matrix composites (MMCs) containing 8 wt % and 16 wt % of $SiC_p-reinforced$ with 30 and $45\;{\mu}m$ in sizes were prepared by a melt stirring-squeeze casting technique. Microstructural observation showed that particle distributions were reasonably well. Turning experiments were carried out on the composites using uncoated and triple-layer coated carbide tools at various cutting speeds under a constant feed rate and depth of cut. Coated tools indicated better performance than uncoated tools for all the materials while the poor surface finish was obtained for coated tools.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.76.2-76.2
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• 2015

I will present my research group's recent investigation on how the localized plasmon of a nanoparticle interacts with another plasmon, and with nearby molecules. First, I will demonstrate the use of scattering-type scanning near-field microscopy (s-SNOM) to directly visualize the capacitive / conductive coupling in dimeric nanoparticles and heterometallic nanorods. Second, I will talk about the use of gap-plasmons to locally induce photochemical reactions, and to follow chemical kinetics of individual organic molecules using the gap-plasmons. As a last topic, I will talk about the use of near-field coupling between a scanning probe and graphenes to visualize / identify the stacking domains (e. g., ABA versus ABC-type stacking in triple layer) hidden in multilayer graphenes.

• Journal of the Korean Applied Science and Technology
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• v.15 no.3
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• pp.85-90
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• 1998

In this study, organic electroluminescent devices(OELD) with a structure of a glass $substrate/ITO/TPD/Tb(ACAC)_3(Phen-Cl)/Alq_3/Al$ was fabricated by vacuum evaporation method, where Tb complex was known to have green light emitting property. Electroluminescent(EL) and I-V characteristics of this structure were investigated. This triple-layer structure shows the green EL spectrum at the wavelwngth of 546nm, which is almost the same as the PL spectrum of $Pb(ACAC)_3(Phen_Cl)$. It was found in current-voltage(I-V) characteristics of the devices that the operating voltage was about 12V.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.1165-1168
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• 1998

This paper describes a 72-word by 32-bit 2-read/1-write multi-port register file, which is suitable for 32-bit RISC/DSP microprocessors. To minimize area and achieve high speed, advanced single-ended sense amplifiers are used. Each part of circuit is optimized at transistor level. The verification of functionality and timing is performed using HSPICE simulations. After modeling and validating the circuit at transistor level, it was laid out in a 0.6um 1-poly 3-metal layer CMOS technology. The simulation results show maximum operating frequency is 179MHz in worst case conditions. It contains 27,326 transistors and the size is 3.02mm by 2.20mm.