• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.243-246
• /
• 2001

In this paper, we have proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. A new power BRTs have shown superior electrical characteristics including snab-back effict and forward blocking voltage more than the conventional BRT. Especially, the trench electrode BRT with intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of BRT is avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develope super high voltage power devices and applicate to another power devices including IGBT, EST and etc.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.243-246
• /
• 2001

In this paper, we have proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. A new power BRTs have shown superior electrical characteristics including snab-back effect and forward blocking voltage more than the conventional BRT. Especially, the trench electrode BRT with intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of BRT is avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develope super high voltage power devices and applicate to another power devices including IGBT, EST and etc.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.9
• /
• pp.758-763
• /
• 2002

A new small size Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19w. The latch-up current density of the proposed LTEIGBT is improved by 10 and 2 times with those of the conventional LIGBT and LTIGBT. The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and TIGBT are 60V and 100V, respectively. Because the electrodes of the proposed device is formed of trench type, the electric field in the device are crowded to trench oxide. When the gate voltage is applied 12V, the forward conduction currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V.