• Title/Summary/Keyword: Trap energy

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Pregnancy Outcomes in Relation to Plasma TRAP Concentration of Maternal and Umbilical Cord (임신말 모체와 제대혈의 혈장 총유리기포집 항산화능과 임신결과)

  • Ahn Hong Seok
    • Journal of Nutrition and Health
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    • v.37 no.9
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    • pp.817-824
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    • 2004
  • The purpose of this study was to analyze the intake of antioxidant vitamins and plasma TRAP concentrations of 60 maternal-infant pairs (30 in normal term delivery group, NT; 30 in preform group, PT) We also investigated the relationship between plasma TRAP levels of maternal-umbilical cord blood and pregnancy outcomes. Mean energy intakes of NT and PT pregnant women were 93.2% and 85.4% and their protein intakes were 113.3% and 110.9% of the recommended dietary allowance (RDA), respectively. The vitamin A intakes of NT and W pregnant women were 559.7 RE and 497.8 RE, which were less than RDA. While the vitamin E and C intakes of both NT and PT pregnant women were more than RDA. The maternal plasma TRAP level of PT was 1.41 mmol/l and that of was 1.50 mmol/l, which was significantly higher than TRAP level of PT (p < 0.05) . The umblical cord plasma TRAP levels of NT and PT were 1.44 mmol/l and 1.23 mmol/l, which indicates the significant difference between those two groups (p < 0.001) . In case of comparing the TRAP level of maternal and umbilical cord blood, there was no significant difference in NT pregnant women, however, in PT group maternal the TRAP level significant higher than that of umbilical cord (p < 0.001). The length of gestation and plasma TRAP level of maternal and umbilical cord showed a positive correlation. However, other parameters of pregnancy outcomes such as birth weight, weight gain, and Apgar score were not affected by the plasma TRAP levels. Based on these results, preform infants could have a risk of oxidative stress because of low plasma TRAP level.

Effect of Air Exposure on ZnO Thin Film for Electron Transport Layer of Quantum Dot Light-Emitting Diode (ZnO 박막 전자수송층의 공기 노출에 의한 양자점 발광다이오드의 특성 변화)

  • Eunyong Seo;Kyungjae Lee;Jeong Ha Hwang;Dong Hyun Kim;Jaehoon Lim;Donggu Lee
    • Journal of Sensor Science and Technology
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    • v.32 no.6
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    • pp.455-461
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    • 2023
  • We investigated the electrical characteristics of ZnO nanoparticles (NPs) with air exposure that is a widely used electron transport layer for quantum dot light-emitting diodes (QLEDs). Upon air exposure, we observed changes in the density of states (DOS) of the trap levels of ZnO NPs. In particular, with air exposure, the concentration of deep trap energy levels in ZnO NPs decreased and electron mobility significantly improved. Consequently, the air-exposed ZnO reduced leakage current by approximately one order of magnitude and enhanced the external quantum efficiency at the low driving voltage region of the QLED. In addition, based on the excellent conductivity properties, high-brightness QLEDs could be achieved.

A New Method for Extracting Interface Trap Density in Short-Channel MOSFETs from Substrate-Bias-Dependent Subthreshold Slopes

  • Lyu, Jong-Son
    • ETRI Journal
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    • v.15 no.2
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    • pp.11-25
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    • 1993
  • Interface trap densities at gate oxide/silicon substrate ($SiO_2/Si$) interfaces of metal oxide semiconductor field-effect transistors (MOSFETs) were determined from the substrate bias dependence of the subthreshold slope measurement. This method enables the characterization of interface traps residing in the energy level between the midgap and that corresponding to the strong inversion of small size MOSFET. In consequence of the high accuracy of this method, the energy dependence of the interface trap density can be accurately determined. The application of this technique to a MOSFET showed good agreement with the result obtained through the high-frequency/quasi-static capacitance-voltage (C-V) technique for a MOS capacitor. Furthermore, the effective substrate dopant concentration obtained through this technique also showed good agreement with the result obtained through the body effect measurement.

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Effect of Microstructure Control of High-Strength Steel on Hydrogen Diffusivity, Trap Activation Energy, and Cracking Resistance in Sour Environments (고강도강의 미세조직 제어가 수소확산계수, 트랩 활성화에너지 및 Sour 환경 내 균열 저항성에 미치는 영향)

  • Jin Sung Park;Sung Jin Kim
    • Corrosion Science and Technology
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    • v.22 no.2
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    • pp.131-136
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    • 2023
  • The aim of this study was to investigate effects of microstructure control on hydrogen diffusivity, trap activation energy, and cracking behaviors of high-strength steel using a range of experimental techniques. Results of this study showed that susceptibility to hydrogen induced cracking (HIC) was significantly associated with hydrogen diffusivity and trap activation energy, which were primarily influenced by the microstructure. On the other hand, microstructural modifications had no significant impact on electrochemical polarization behavior on the surface at an early corrosion stage. To ensure high resistance to HIC of the steel, it is recommended to increase the cooling rate during normalizing to avoid formation of banded pearlite in the microstructure. However, it is also essential to establish optimal heat treatment conditions to ensure that proportions of bainite, retained austenite (RA), and martensite-austenite (MA) constituents are not too high. Additionally, post-heat treatment at below A1 temperature is desired to decompose locally distributed RA and MA constituents.

Trap Level Study of Alq3 for OLED with Debye Dielectric Relaxation (Debye 이론을 이용한 유기 EL용 Alq3계 재료의 Trap Level 측정)

  • Jeong, Yong-Seok;Jeong, Yeon-Tae;Kim, Jong-Tae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.6
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    • pp.668-672
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    • 2004
  • Upon Debye's dielectric relaxation theory, we tried simple determination method of trap level in organic EL materials. From dielectric measurements in the 20 Hz - 1 MHz frequency range and in the 150 K - 320K temperature range, the depth of traps in Alq$_3$ filled with remaining electrons was determinated. Comparing to other determination techniques like TSL, or TL, the apparatus all we need is just simple LCR meter, thermometer and cooling method(liquid nitrogen). The mean activation energy is about 0.20 eV. It is in good agreement with previous determinations by other techniques like TSL. This results consolidate the validity of Burrow's transport mechanism model. Further intensified experiment with UV light on the dielectric absorption(Photodipolair effect) was nevertheless disturbed by the photoconductivity component.

The Experimental Research of LNT for 3L-DME Engine (3리터급 DME 엔진용 LNT 후처리 장치 연구)

  • Jang, Jinyoung;Lee, Youngjae;Pyo, Youngduk;Cho, Chongpyo;Woo, Youngmin
    • Transactions of the Korean Society of Automotive Engineers
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    • v.21 no.6
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    • pp.117-122
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    • 2013
  • This study is aimed to develop LNT(Lean NOx Trap) aftertreatment system for DME engine. Modified DME engine, which was changed from diesel to current DME engine, is used for this research and is equipped with common rail type injector and fuel supplying system. LNT system has reductant injector. DME is also used as reduction agent. For this research, reduction agent injection time width and interval were varied. And also, swirler was used to improve homogeneity of reducing agent in exhaust pipe. The reduction rate of NOx by LNT was increased by longer injection width, short interval and swirler. The maximum diminution of NOx by LNT was over 85%.

ANALYSIS OF THE LiF:Mg,Cu,Si TL AND THE LiF:Mg,Cu,P TL GLOW CURVES BY USING GENERAL APPROXIMATION PLUS MODEL

  • Chang, In-Su;Lee, Jung-Il;Kim, Jang-Lyul;Oh, Mi-Ae;Chung, Ki-Soo
    • Journal of Radiation Protection and Research
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    • v.34 no.4
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    • pp.155-164
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    • 2009
  • In this paper, we used computerized glow curve deconvolution (CGCD) software with several models for the simulation of a TL glow curve which was used for analysis. By using the general approximation plus model, parameters values of the glow curve were analyzed and compared with the other models parameters (general approximation, mixed order kinetics, general order kinetics). The LiF:Mg,Cu,Si and the LiF:Mg,Cu,P material were used for the glow curve analysis. And we based on figure of merits (FOM) which was the goodness of the fitting that was monitored through the value between analysis model and TLD materials. The ideal value of FOM is 0 which represents a perfect fit. The main glow peak makes the most effect of radiation dose assessment of TLD materials. The main peak of the LiF:Mg,Cu,Si materials has a intensity rate 80.76% of the whole TL glow intensity, and that of LiF:Mg,Cu,P materials has a intensity rate 68.07% of the whole TL glow intensity. The activation energy of LiF:Mg,Cu,Si was analyzed as 2.39 eV by result of the general approximation plus(GAP) model. In the case of mixed order kinetics (MOK), the activation energy was analyzed as 2.29 eV. The activation energy was analyzed as 2.38 eV by the general order kinetics (GOK) model. In the case of LiF:Mg,Cu,P TLD, the activation energy was analyzed as 2.39 eV by result of the GAP model. In the case of MOK, the activation energy was analyzed as 2.55 eV. The activation energy was analyzed as 2.51 eV by the GOK model. The R value means different ratio of retrapping-recombination. The R value of LiF:Mg,Cu,Si TLD main peak analyzed as $1.12\times10^{-6}$ and $\alpha$ value analyzed as $1.0\times10^{-3}$. The R of LiF:Mg,Cu,P TLD analyzed as $7.91\times10^{-4}$, the $\alpha$ value means different ratio of initial thermally trapped electron density-initial trapped electron density (include thermally disconnected trap electrons density). The $\alpha$ value was analyzed as $9.17\times10^{-1}$ which was the difference from LiF:Mg,Cu,Si TLD. The deep trap electron density of LiF:Mg,Cu,Si was higher than the deep trap electron density of LiF:Mg,Cu,P.

Characterizations of a Cold Trap System for the Process Stabilization of Al2O3 by ALD Equipment (ALD 장비의 Al2O3 공정 안정화를 위한 저온 트랩 장치의 특성 평가)

  • Yong Hyeok Seo;Won Woo Lee;In Hwan Kim;Ji Eun Han;Yeon Ju Lee;Che Hoo Cho;Yongmin Jeon;Eou-Sik Cho;Sang Jik Kwon
    • Journal of the Semiconductor & Display Technology
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    • v.23 no.1
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    • pp.92-96
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    • 2024
  • The application of the technology for forming Al2O3 thin films using ALD(atomic layer deposition) method is rapidly increasing in the semiconductor and display fields. In order to increase the efficiency of the ALD process in a mass production line, metallic by-products generated from the ALD process chamber must be effectively collected. By collecting by-products flowing out of the chamber with a cold trap device before they go to the vacuum pump, damage to the vacuum pump can be prevented and the work room can be maintained stably, resulting in increased process flow rate. In this study, a cold trap was installed between the ALD process chamber and the dry pump to measure and analyze by-products generated during the Al2O3 thin film deposition process. As a result, it was confirmed that Al and O elements were discharged, and the collection forms were two types: bulk and powder. And the binding energy peaked at 73.7 ~ 74.3 eV, the binding energy of Al 2p, and 530.7 eV, the binding energy of O 1s, indicating that the binding structure was Al-O.

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Genetic Diversity and Relationship in Soybean MDP (Mutant Diversity Pool) Revealed by TRAP and TE-TRAP Markers

  • Kim, Dong-Gun;Bae, Chang-Hyu;Kwon, Soon-Jae
    • Proceedings of the Plant Resources Society of Korea Conference
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    • 2019.04a
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    • pp.32-32
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    • 2019
  • Mutation breeding is the useful tool to improve agronomic traits in various crop species. Soybean is most important crop and is rich in protein and oil contents. Despite of the importance as economic value and various genetic resource of soybean, there have been limited studies of genetic relationship among mutant resources through radiation breeding. In this study, the agronomical phenotype for selecting various genetic resources was evaluated in 528 soybean mutant lines. As a result, 210 soybean mutants with their original cultivars were selected with various traits. We named 210 selected lines as Mutant Diversity Pool (MDP). The genetic diversity and the relationship of the MDP were investigated using TRAP and TE-TRAP markers. In TRAP analysis, sixteen primer combination (PC)s were used and a total of 551 fragments were amplified. The highest (84.00%) and the lowest (32.35%) polymorphism levels were showed in PC MIR157B+Ga5 and B14G14B+Ga3, respectively. The mean of PIC values was 0.15 ranging from 0.07 in B14G14B+Sa12 to 0.23 in MIR157B+Sa4. Phylogenetic and population structure analysis indicated that the 210 MDP lines dispersed to four groups among the wild types and their mutants. The highest genetic diversity among populations was observed between lines Paldal and 523-7 (Fst=0.409), whereas the lowest genetic diversity was between population KAS360-22 and 94seori (Fst=0.065). AMOVA showed 11.583 (21.0%) and 43.532 (79.0%) variations in inter and intra mutant population, respectively. Overall, the genetic similarity of each intra mutant populations was closer than that of inter mutant population. A total of 408 fragments were amplified in the 210 MDP using twelve PCs of TE-TRAP markers that were obtained from a combination of three TIR sequence of transposable elements (MITE-stowaway; M-s, MITE-tourist; M-t, PONG). The highest (77.42%) and the lowest (56.00%) polymorphism levels were showed in PONG+Sa4 and PONG+Sa12, respectively. The mean of PIC values was 0.15 ranging from 0.09 in M-s+Sa4 and M-s+Ga5 to 0.21 in M-t+Ga5. AMOVA of M-s showed 2.209 (20%) and 8.957 (80%) variations in inter and intra mutant population, respectively. AMOVA of M-t showed 2.766 (18%) and 12.385 (82%) variations in inter and intra mutant population, respectively. AMOVA of PONG showed 3.151 (29%) and 7.646 (71%) variations in inter and intra mutant population, respectively. According to our study, the PONG had higher inter mutant population and lower intra mutant population. This mean was that for aspect of radiation sensitivity, M-s and M-t showed higher mobility than that of PONG. Our results suggest that the TRAP and the TE-TRAP markers may be useful for assessing the genetic diversity and relationship among soybean MDP and help to improve our knowledge of soybean mutation/radiation breeding.

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