• Journal of the Korean institute of surface engineering
• /
• v.44 no.6
• /
• pp.250-254
• /
• 2011

NiO-AZO films were deposited on glass substrate by DC and RF magnetron co-sputtering system in pure $O_2$ gas without substrate heating during deposition. In order to control the chemical composition of the film, NiO target was supplied with constant RF power of 150 W and AZO target (doped with 2.98 at% aluminum) with DC power varied between 40 W to 80 W. Deposited NiO-AZO films were evaluated by structural and chemical analysis. With introducing AZO, XRD and XPS data reveal that NiO were supplied with more oxygen. these results could be strongly affected by the higher bond enthalpy of NiO compared to ZnO, which makes it possible for NiO to obtain excessive oxygen from ZnO.

• Proceedings of the Korea Contents Association Conference
• /
• 2014.11a
• /
• pp.253-254
• /
• 2014

본 연구에서는 DC magnetron sputter 장비를 사용하여 투명 디스플레이 실현을 위한 상부전극용 박막을 제작하였고, 제작된 박막의 광학적 특성과 물리적 특성을 분석하였다. 소다라임 유리기판 인가된 전판 위에 증착한 ITO의 경우에는 박막의 증착률압에 따라 두께와 굴절률이 증가함을 보였으며, 증착된 박막의 광학적 투과도는 박막의 두께에 따라 접차 감소함을 확인 하였고, 반면 고전도 특성을 가진 알루미늄 박막은 증착된 박막의 두께가 두꺼울수록 전면의 반사도가 증가하여 투명전극으로 사용할 수 없었으나 스퍼터의 내부의 분위기압을 높이고 인가된 전압을 높고 단시간에 박막을 증착하였을 경우에 약 70%정도 현재 보다 향상된 투명전극으로의 광학적 투과도 특성을 보였다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.287-287
• /
• 2010

We report a new direct patterning method, called liquid bridge-mediated nanotransfer molding (LB-nTM), for the formation of two- or three-dimensional structures with feature sizes between tens of nanometers and tens of micron over large areas. LB-nTM is based on the direct transfer of various materials from a mold to a substrate via a liquid bridge between them. This procedure can be adopted for automated direct printing machines that generate patterns of functional materials with a wide range of feature sizes on diverse substrates. Arrays of TIPS-PEN TFTs were fabricated on 4" polyethersulfone (PES) substrates by LB-nTM using PDMS molds. An inverted staggered structure was employed in the TFT device fabrication. A 150 nm-thick indium-tin oxide (ITO) gate electrode and a 200 nm-thick SiO2dielectric layer were formed on a PES substrate by sputter deposition. An array of TIPS-PEN patterns (thickness: 60 nm) as active channel layers was fabricated on the substrate by LB-nTM. The nominal channel length of the TIPS-PEN TFT was 10 mm, while the channel width was 135 mm. Finally, the source and drain electrodes of 200 nm-thick Ag were defined on the substrate by LB-nTM. The TIPS-PEN TFTs can endure strenuous bending and are also transparent in the visible range, and therefore potentially useful for flexible and invisible electronics.

• 한국신재생에너지학회:학술대회논문집
• /
• 2011.11a
• /
• pp.53.2-53.2
• /
• 2011

Dye-sensitized solar cells(DSSCs) have been recognized as an alternative to the conventional p-n junction solar cells because of their simple fabrication process, low production cost, and transparency. A typical DSSC consists of a transparent conductive oxide (TCO) electrode, a dye-sensitized oxide semiconductor nanoparticle layer, liquid redox electrolyte, and a Pt-counter electrode. In dye-sensitized solar cells, charge recombination processes at interfaces between coducting glass, $TiO_2$, dye, and electrolyte play an important role in limiting the photon-to-electron conversion efficiency. A layer of ZTO thin film less than ~200nm in thickness, as a blocking layer, was deposited by DC magnetron sputtering method directly onto the anode electrode to be isolated from the electrolyte in dye-sensitized solar cells(DSCs). This is to prevent the electrons from back-transferring from the electrode to the electrolyte ($I^-/I_3^-$). The presented DSCs were fabricated with working electrode of Ga-doped ZnO glass coated with blocking ZTO layer, dye-attached nanoporous $TiO_2$ layer, gel electrolyte and counter electrode of Pt-deposited GZO glass. The effects of blocking layer were studied with respect to impedance and conversion efficiency of the cells.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.84-84
• /
• 2011

RF magnetron sputtering을 이용하여 산소 유량에 따라 ZnO 박막을 유리기판 위에 제작하고 구조적, 광학적, 전기적 특성을 조사하였다. 박막 증착 조건의 초기 압력은 $1.0{\times}10^{-6}Torr$, RF 파워는 100W, 증착온도는 상온으로 고정하였으며 기판은 Corning 1737 유리 기판을 사용하였다. 공정 변수로 Ar:$O_2$가스 비율을 50:50 sccm, 75:25 sccm, 100:0 sccm으로 변화시켰다. 유리기판 위에 증착된 모든 ZnO 박막에서 (002) 면의 우선배향성이 관찰되었고 85% 이상의 투과율을 나타내었다. 산소유량이 적을수록 ZnO 박막의 결정성은 향상되었고, 광학적 밴드갭은 증가하였다. Hall 측정 결과 산소의 유량이 포함되어 있는 박막에서는 모두 완전한 산화물에 가까운 화학양론적 조성으로 면 저항이 $10^6{\Omega}/{\square}$ 이상인 부도체 특성을 보였으며, 산소가 포함되지 않은 샘플에서는 n타입의 반도체 특성이 확인되었다. 산소가 포함되지 않은 Ar 유량이 100sccm일 때 전기비저항 $3.56{\times}10^{+1}1{\Omega}cm$, 전하의 농도 $2.04{\times}10^{18}cm^{-3}$, 이동도 $8.59cm^2V^{-1}s^{-1}$로 반도체 활성층으로 적합한 전기적 특성을 얻었다. ZnO 박막의 경우 산소가 포함될 경우 결정성이 저하되고, 절연특성을 갖는 것을 확인할 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2000.01a
• /
• pp.85-87
• /
• 2000

In this study, high-density plasma etching characteristics of ITO(indium tin oxide) films used for transparent electrodes in display devices have been investigated. The etch characteristics of ITO as a function of $Ar/CH_4$ gas mixtures were analyzed using QMS(quadrupole mass spectrometry), OES(optical emission spectroscopy), and ESP(electrostatic probe). ITO etch rates were increased with the addition of moderate amount of $CH_4$ to Ar due to the increased chemical reaction between $CH_3$ or H and ITO in addition to the physical sputtering of ITO by Ar ion bombardment. However, the addition of excess amount of $CH_4$ decreased the ITO etch rates possibly due to the increased polymer formation on the ITO surface. Also, the measurement data obtained by QMS and OES suggested that $CH_3$ radicals are more activity involved in the etching of ITO compared to H radicals.

• Journal of Sensor Science and Technology
• /
• v.16 no.6
• /
• pp.395-400
• /
• 2007

Ambient drying sol-gel processing was used for monolithic silica ambigels in the temperature range of $130-250^{\circ}C$. A new method of mesopore ambigels, which mean the aerogels prepared by ambient pressure drying process synthesis, is suggested at first. This method includes two important approaches. The first point is that $SiO_{2}$ surface modification of wet gel was performed by trimethylchlorosilane in n-butanol solution. This procedure is provided the silica gel mesopore structure formation. The second point is a creation of the ternary azeotropic mixture water/n-butanol/octane as porous liquid, which is effectively provided removing of water such a low temperature by 2 step drying condition under ambient pressure. The silica aerogels, which were prepared by ambient pressure drying from azeotropic mixture of water/n-butanol/octane, are transparent, crack-free and mesoporous (pore size ${\sim}$ 5.6 nm) with surface area of ${\sim}$ $923{\;}m^2/g$, bulk density of $0.4{\;}g/cm^3$ and porosity of 85 %.

• Journal of Magnetics
• /
• v.13 no.3
• /
• pp.88-91
• /
• 2008

This study examined the effect of Sn co-doping on the transport and magnetic properties of Cr-doped $In_2O_3$ thin films grown on (100) silicon substrates by pulsed laser deposition. The experimental results showed that Sn co-doping enhances the magnetization and appearance of the anomalous Hall effect, and increases the carrier (electron) concentration. These results suggest that the conduction carrier plays an important role in enhancing the ferromagnetism of a laser-deposited Cr-doped $In_2O_3$ film, which may have applications in transparent oxide semiconductor spin electronics devices.

• Journal of the Semiconductor & Display Technology
• /
• v.16 no.1
• /
• pp.97-101
• /
• 2017

In this paper, IGZO thin film transistor (TFT) was fabricated with cross-linked Poly (4-vinylphenol) (PVP) gate dielectric for flexible, transparent display applications. The PVP is one of the candidates for low-temperature gate insulators. MIM structure was fabricated to measure the leakage current and evaluate the insulator properties according to the annealing temperature. Low leakage current ( <0.1nA/cm2 @ 1MV/cm ) was observed at $200^{\circ}C$ annealing condition and decreases much more as the annealing temperature increases. The electrical characteristics of IGZO TFT such as subthreshold swing, mobility and ON/OFF current ratio were also improved, which shows that the performance of IGZO TFTs with PVP can be enhanced by reducing the amount of incomplete crosslinking in PVP.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.1
• /
• pp.61-66
• /
• 2002

A method for designing antireflection (AR) and antistatic (AS) coating layer by the use of conducting polymer as an electrically conductive transparent layer is proposed. The conducting AR coating is composed of four-layer with alternating high and low refractive index layer: silicon dioxide (n=1.44) and titanium dioxide (n=2.02) prepared at low temperature by sol-gel method are used as the low and high refractive index layer, respectively. The poly(3,4-ethylenedioxythiophene) which has the surface resistivity of 10$^4$Ω/$\square$ is used as a conductive layer. Optical constant of each ARAS coating layers such as refractive index and optical thickness were measured by 7he spectroscopic ellipsometer and from the measured optical constants the spectral properties such as reflectance and transmittance were simulated in the risible region. The reflectance of ARAS films on glass substrate was below 1 %R and the transmittance was higher than 95 % in the visible wavelength (400-700 nm). The measured AR spectral properties was very similar to its simulated results.