• Current Optics and Photonics
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• 제1권5호
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• pp.505-513
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• 2017

Measuring the thickness of thin films is strongly required in the display industry. In recent years, as the size of a pattern has become smaller, the substrate has become larger. Consequently, measuring the thickness of the thin film over a wide area with low spatial sampling size has become a key technique of manufacturing-yield management. Interferometry is a well-known metrology technique that offers low spatial sampling size and the ability to measure a wide area; however, there are some limitations in measuring the thickness of the thin film. This paper proposes a method to calculate the thickness of the thin film in the following two steps: first, pre-estimation of the thickness with the phase at the peak position of the interferogram at the bottom surface of the thin film, using white-light phase-shift interferometry; second, accurate correction of the measurement by fitting the interferogram with the theoretical pattern through the estimated thickness. Feasibility and accuracy of the method has been verified by comparing measured values of photoresist pattern samples, manufactured with the halftone display process, to those measured by AFM. As a result, an area of $880{\times}640$ pixels could be measured in 3 seconds, with a measurement error of less than 12%.

• Current Photovoltaic Research
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• 제2권3호
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• pp.95-102
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• 2014

Light trapping techniques can change the propagation direction of incident light and keep the light longer in the absorption layers of solar cells to enhance the power conversion efficiency. In thin film silicon (Si) solar cells, the thickness of absorption layer is generally not enough to absorb entire available photons because of short carrier life time, and light induced degradation effect, which can be compensated by the light trapping techniques. These techniques have been adopted as textured transparent conduction oxide (TCO) layers randomly or periodically textured, intermediate reflection layers of tandem and triple junction, and glass substrates etched by various patterning methods. We reviewed the light trapping techniques for thin film Si solar cells and mainly focused on the commercially available techniques applicable to textured TCO on patterned glass substrates. We described the characterization methods representing the light trapping effects, texturing of TCO and showed the results of multi-scale textured TCO on etched glass substrates. These methods can be used tandem and triple thin film Si solar cells to enhance photo-current and power conversion efficiency of long term stability.

• Applied Science and Convergence Technology
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• 제27권5호
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• pp.105-108
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• 2018

Transparent $TiO_2$ nanotube arrays are successfully prepared by a two-step approach involving electrochemical anodization and RF magnetron sputtering. First, a Ti film is deposited on an FTO substrate by RF magnetron sputtering at room temperature. The morphologies of the Ti film are controlled by the working distance, Ar flow, and DC power. Second, an anodization treatment is electrochemically performed for the formation of nanotube arrays from the deposited Ti film, followed by post-annealing treatment in air for the formation of $TiO_2$ crystallization. The back side of the crystallized $TiO_2$ nanotube arrays is illuminated with solar light to characterize the photoelectrochemical reaction, and their photoelectrochemical properties are investigated. This work provides information on application of a thin film deposited by RF sputtering in the field of photoelectrochemical water splitting.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1101-1104
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• 2008

We have fabricated the transparent TFTs using new oxide material (AZTO: Al-doped zinc tin oxide) as an active layer. The AZTO TFT showed good performance without post-annealing. The electrical characteristics were improved by the post-annealing up to $300^{\circ}C$. The AZTO TFTs exhibited a mobility of $8{\sim}12\;cm^2/Vs$, a sub-threshold swing of 0.2~0.6 V/dec, and an on/off ratio of more than $10^9$.

• 한국세라믹학회지
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• 제41권4호
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• pp.277-283
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• 2004

Plasma Display Panel(PDP) 상판용 투명유전체의 green sheet를 제조코자 투명유전체 슬러리의 분산특성 및 유기물의 함량과 조성비에 따른 밀도와 기계적 특성을 연구하였다. 비수계 시스템에서 슬러리의 완전분산을 위한 분산제의 종류와 분산제의 양을 결정하기 위해 침강실험, 점도측정을 행하여 최적의 분산조건을 구하였다. 조성물 변수로서 투명유전체조성 분말/(투명유전체조성 분말＋유기물)의 비와 결합제/(결합제＋가소제)의 비를 각각 변화시켜 green sheet를 제조하였다. 제조된 tape casting 슬러리의 대부분은 의가소성(pseudoplastic) 거동을 보이는데, 의가소성 거동은 shear thinning의 효과를 가지는 것으로 기술 할 수 있다. 각각의 조성을 가지는 슬러리는 모두 전단속도가 증가함에 겉보기 점도가 감소하는 shear thinning 효과를 보여 주었다. Green sheet의 특성을 조사한 결과 유기물의 함량 및 조성이 green sheet의 밀도와 기계적 특성을 결정하는 중요한 인자가 되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.127-127
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• 2011

We investigate the transparent TFTs using a transparent ZnSnO3 (ZTO)/Ag/ZTO multilayer electrode as S/D electrodes with low resistivity of $3.24{\times}10^{-5}$ ohm-cm, and high transparency of 86.29% in ZTO based TFTs. The Transparent TFTs (TTFTs) are prepared on glass substrate coated 100 nm of ITO thin film. On atomic layer deposited $Al_2\;O_3$, 50 nm ZTO layer is deposited by RF magnetron sputtering through a shadow mask for channel layer using ZTO target with 1 : 1 molar ratio of ZnO : $SnO_2$. The power of 100W, the working pressure of 2mTorr, and the gas flow of Ar 20 sccm during the ZTO deposition. After channel layer deposition, a ZTO (35 nm)/Ag (12 nm)/ZTO(35 nm) multilayer is deposited by DC/RF magnetron sputtering to form transparent S/D electrodes which are patterned through the shadow mask. Devices are annealed in air at 300$^{\circ}C$ for 30 min following ZTO deposition. Using UV/Visible spectrometer, the optical transmittances of the TTFT using ZTO/Ag/ ZTO multilayer electrodes are compared with TFT using Mo electrode. The structural properties of ZTO based TTFT with ZTO/Ag/ZTO multilayer electrodes are analyzed by high resolution transmission electron microscopy (HREM) and X-ray photoelectron spectroscopy (XPS). The transfer and output characterization of ZTO TTFTs are examined by a customized probe station with HP4145B system in are.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.106-106
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• 2011

Recently, zinc oxide (ZnO) thin films have attracted great attention as a promising candidate for various electronic applications such as transparent electrodes, thin film transistors, and optoelectronic devices. ZnO thin films have a wide band gap energy of 3.37 eV and transparency in visible region. Moreover, ZnO thin films can be deposited in a poly-crystalline form even at room temperature, extending the choice of substrates including even plastics. Therefore, it is possible to realize thin film transistors by using ZnO thin films as the active channel layer. In this work, we investigated influence of oxygen partial pressure on ZnO thin films and fabricated ZnO-based thin film transistors. ZnO thin films were deposited on glass substrates by using a pulsed laser deposition technique in various oxygen partial pressures from 20 to 100 mTorr at room temperature. X-ray diffraction (XRD), transmission line method (TLM), and UV-Vis spectroscopy were employed to study the structural, electrical, and optical properties of the ZnO thin films. As a result, 80 mTorr was optimal condition for active layer of thin film transistors, since the active layer of thin film transistors needs high resistivity to achieve low off-current and high on-off ratio. The fabricated ZnO-based thin film transistors operated in the enhancement mode with high field effect mobility and low threshold voltage.

• 한국결정성장학회지
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• 제33권3호
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• pp.97-103
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• 2023

수분 차단성이 우수한 투명 포장재용 배리어성 필름을 개발하기 위하여, 상온 진공하에서 플라즈마 활성화 표면처리 공정의 전처리 공정을 거친 후에, 나노클레이 분산 적층 코팅층을 형성한다. 접착력 향상을 위한 코팅 공정의 적절한 가교공정과 최적분산공정을 통한 커플링 첨가제를 최적화하는 데 중점을 두었다. 기능성 코팅 박막에 대하여 분석한 결과는 수분 투과도 10 g/m²/24 hrs(ASTM F-1249) 이하, 산소 투과도 30 cc/m²/24 hrs(ASTM D3985) 이하임을 보여주었다. 이는 종래의 무처리 필름의 10배 이상 수분 차단성이 우수한 투명 포장용 표면기능성 코팅박막에 해당됨을 보였다. 아울러, 투명가스 차단 필름의 두께는 0.1 mm 이내이며, 투명가스차단 복합층은 2개의 층으로 구성되었다. PET 박막 계면 특성연구에서, FT-IR의 실험분석에 의하면 R DS 1.125 %에서 반응 활성도가 최적화임을 나타내고 있다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1145-1148
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• 2008

The present status and trend of oxide phosphor thin-film development for thin-film electroluminescent (TFEL) device application are presented in this paper. Recently, several newly developed types of bendable or bendable see-through oxide TFEL lamps have been fabricated using the TFEL technology with a newly developed bendable ceramic sheet, glass sheet or sapphire sheet substrate, which has become available on the market. Stable operation at high temperatures was obtained in double-insulating-layer-type TFEL lamps fabricated with a $Zn_2Si_{0.6}Ge_{0.}4O_4$:Mn thin-film emitting layer forming on translucent or transparent bendable sheet substrates.

• 전기학회논문지
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• 제63권11호
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• pp.1533-1537
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• 2014

$WO_3/Ag/WO_3$ multilayer was researched by using RF magnetron sputtering with transparent electrode. Process gas flow ratio with $Ar/O_2$ were selected the optimum conditions at 70sccm/2sccm and $WO_3$ thin film at its conditions was appeared at transmittance about 80% in the visible light region to the average. $WO_3/Ag/WO_3$ multilayer thin films were fabricated from the same process condition which was the same gas flow ratio of Ar and $O_2$ $WO_3/Ag/WO_3$ thin films were appeared transmittance about 93% and sheet resistance about $6.41{\Omega}/{\square}$. From the SEM images, each thin films were appeared when $WO_3$ is 40nm and $O_2$ is 10nm.