• 전자공학회논문지 IE
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• 제44권2호
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• pp.21-25
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• 2007

본 논문에서는 표면저항을 이용한 차폐성능 및 다층박막의 광학설계 후, roll- to-roll DC 스퍼터링 공정을 이용하여 PET(Polyethylene terephtalate) 필름위에 투명 전도성 산화물 박막인 ITO와 금속을 다층박막 구조(Multilayer)로 균질하게 증착한 전파차폐필름을 1m 넓이로 제작하고 광투과 및 전파차폐특성을 조사하였다. 각 층의 면저항 및 두께에 따라서 전자파 차폐성능과 광투과도를 최적화 할 수 있도록 설계되었고, 그 조건에 따라 필름을 제작하였다. 제작된 전파차폐필름은 2-18GHz 대역에서 99.5%의 차폐성능을 나타내었으며, 400-700 nm에서의 전광선 투과율은 83.1%로 우수한 시인성과 전파차폐특성을 보유하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1425_1426
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• 2009

In this study, commercially available polyethylene terephthalate(PET), which is widely used as a substrate of flexible electronic devices, was modified by dielectric barrier discharge(DBD) method in an air condition at atmospheric pressure, and aluminium - doped zinc oxide (ZnO:Al) transparent conducting film was deposited on PET substrate by r. f. magnetron sputtering method. Surface analysis and characterization of the plasma-treated PET substrate was carried out using contact angle measurements, X-ray Photoelectron Spectroscopy(XPS) and Atomic Force Microscopy (AFM). Especially the effect of surface state of PET substrate on some important properties of ZnO:Al transparent conducting film such as electrical and morphological properties and deposition rate of the film, was studied experimentally. The results showed that the contact angle of water on PET film was reduced significantly from $62^{\circ}$ to $43^{\circ}$ by DBD surface treatment at 20 min. of treatment time. The plasma treatment also improved the deposition rate and electrical properties. The deposition rate was increased almost linearly with surface treatment time. The lowest electrical resistivity as low as $4.97{\times}10^{-3}[\Omega-cm]$ and the highest deposition rate of 234[${\AA}m$/min] were obtained in ZnO:Al film with surface treatment time of 5min. and 20min., respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.389.2-389.2
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• 2016

The flexible solid state device has been widely studied as portable and wearable device applications such as display, sensor and curved circuits. A zero-bias operation without any external power consumption is a highly-demanding feature of semiconductor devices, including optical communication, environment monitoring and digital imaging applications. Moreover, the flexibility of device would give the degree of freedom of transparent electronics. Functional and transparent abrupt p/n junction device has been realized by combining of p-type NiO and n-type ZnO metal oxide semiconductors. The use of a plastic polyethylene terephthalate (PET) film substrate spontaneously allows the flexible feature of the devices. The functional design of p-NiO/n-ZnO metal oxide device provides a high rectifying ratio of 189 to ensure the quality junction quality. This all transparent metal oxide device can be operated without external power supply. The flexible p-NiO/n-ZnO device exhibit substantial photodetection performances of quick response time of $68{\mu}s$. We may suggest an efficient design scheme of flexible and functional metal oxide-based transparent electronics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.151-151
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• 2009

Recently, there has been increasing interest in amorphous oxide semiconductors to find alternative materials for an amorphous silicon or organic semiconductor layer as a channel in thin film transistors(TFTs) for transparent electronic devices owing to their high mobility and low photo-sensitivity. The fabriction of amorphous oxide-based TFTs at room temperature on plastic substrates is a key technology to realize transparent flexible electronics. Amorphous oxides allows for controllable conductivity, which permits it to be used both as a transparent semiconductor or conductor, and so to be used both as active and source/drain layers in TFTs. One of the materials that is being responsible for this revolution in the electronics is indium-zinc-tin oxide(IZTO). Since this is relatively new material, it is important to study the properties of room-temperature deposited IZTO thin films and exploration in a possible integration of the material in flexible TFT devices. In this research, we deposited IZTO thin films on polyethylene naphthalate substrate at room temperature by using magnetron sputtering system and investigated their properties. Furthermore, we revealed the fabrication and characteristics of top-gate-type transparent TFTs with IZTO layers, seen in Fig. 1. The experimental results show that by varying the oxygen flow rate during deposition, it can be prepared the IZTO thin films of two-types; One a conductive film that exhibits a resistivity of $2\times10^{-4}$ ohm${\cdot}$cm; the other, semiconductor film with a resistivity of 9 ohm${\cdot}$cm. The TFT devices with IZTO layers are optically transparent in visible region and operate in enhancement mode. The threshold voltage, field effect mobility, on-off current ratio, and sub-threshold slope of the TFT are -0.5 V, $7.2\;cm^2/Vs$, $\sim10^7$ and 0.2 V/decade, respectively. These results will contribute to applications of select TFT to transparent flexible electronics.

• 한국레이저가공학회지
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• 제10권1호
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• pp.19-27
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• 2007

Previous studies demonstrated that laser ablation under transparent liquid can result in ablation enhancement and particle removal from the surface. Although the ablation enhancement by liquid is already known for semiconductor and metal, the phenomena of polymer ablation have not been studied. In this work, tile liquid-assisted excimer laser ablation process is examined for polymer materials, such as polyethylene terephthalate (PET), polymethyl methacrylate (PMMA) with emphasis on ablation enhancement and surface topography. In the case of PET and PMMA, the effect of liquid is analyzed both for thin water film and bulk water. The results show that application of liquid increases the ablation rate of PMMA while that of PET remains unchanged even in the liquid-assisted process. However, the surface roughness is generally deteriorated in the liquid-assisted process. The surface topography is found to be strongly dependent on the method of liquid application, i.e., thin film or bulk liquid.

• 한국포장학회지
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• 제23권3호
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• pp.133-141
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• 2017

본 논문에서는 신선도 유지 기능을 부여한 새로운 형태의 산화생분해성 필름 개발에 관하여 서술하였다. 생분해 촉매제로 유기 금속염, 유기산, 불포화 지방산등을 함유한 산화생분해성 및 항균신선도기능을 부여한 M/B를 각각 제조한 후, 이를 플라스틱 레진에 첨가하여 항균 및 신선도 기능의 산화생분해 복합필름(AOB film)을 제작하였다. 제조된 항균신선도 A M/B의 항균력 시험은 진탕 플라스크 방법을 사용하여 농도별 시험을 실시하였다. A MB 5% 첨가한 AOB 필름은 별도로 필름 밀착법을 통해 제조하여 실험한 결과, 필름의 항균작용이 매우 우수함을 확인할 수 있었다. 자두를 대상으로 한 신선도 유지기능 평가 결과, A M/B 5% 첨가한 AOB 필름이 대조군 필름에 비하여 신선도 유지 효과가 우수하였다. 또한 산화생분해성을 평가하기 위하여, UV 340 nm로 처리한 필름의 인장강도 및 신장율을 측정한 결과, AOB 필름의 물성 감소율이 우수하였으며, 이는 산화생분해 특성을 갖는 것을 의미한다. 결론적으로 항균 및 신선도 기능의 산화생분해성(AOB) 복합필름은 식품 유통과정에서 발생할 수 있는 식품의 부패를 방지하는 측면에서 긍정적인 효과를 가져올 수 있을 것으로 판단되어진다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1260-1261
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• 2008

Aluminium doped zinc oxide (ZnO:Al) thin film has emerged as one of the most promising transparent conducting electrode in flat panel displays(FPD) and in photovoltaic devices since it is inexpensive, mechanically stable, and highly resistant to deoxidation. In this paper ZnO:Al thin film was deposited on the polyethylene terephthalate(PET) substrate by the capacitively coupled r.f. magnetron sputtering method. Wide ranges of bias voltage, -30V${\sim}$45V, was applied to the growing films as an additional energy instead of substrate heating, and the effect of positive and negative bias on the film structure and electrical properties of ZnO:Al films was studied and discussed. The results showed that a bias applied to the substrate during sputtering contributed to the improvement of electrical properties of the film by attracting ions and electrons in the plasma to bombard the growing films. These bombardments provided additional energy to the growing ZnO film on the substrate, resulting in significant variations in film structure and electrical properties. The film deposited on the PET substrate at r. f. discharge power of 200 W showed the minimum resistivity of about $2.4{\times}10^{-3}{\Omega}-cm$ and a transmittance of about 87%.

• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.282-285
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• 2012

It is well known that Zinc Oxide (ZnO) is an attractive material for its various applications. ZnO has been mostly used as a transparent conducting oxide in liquid crystal displays, solar cells due to its advantages of low cost, high productivity, and excellent electrical conductivity. Notably, flexible-dye-sensitized solar cells (DSSCs) based on polyethylene terephthalate (PET) substrates require low temperature sintering processing conditions. Therefore, low temperature processing conditions have been strongly required for transparent conducting film applications. In this paper, we prepared low temperature-sintered ZnO ceramics employing Li as a sintering aid.

• 한국재료학회지
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• 제20권4호
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• pp.175-180
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• 2010

Transparent conducting oxide (TCO) films are widely used for optoelectronic applications. Among TCO materials, zinc oxide (ZnO) has been studied extensively for its high optical transmission and electrical conduction. In this study, the effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films (GZO) on polyethylene naphthalate (PEN) substrate were studied. The $O_2$ plasma pretreatment process was used instead of conventional oxide buffer layers. The $O_2$ plasma treatment process has several merits compared with the oxide buffer layer treatment, especially on a mass production scale. In this process, an additional sputtering system for oxide composition is not needed and the plasma treatment process is easily adopted as an in-line process. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the PEN substrate and the GZO film, the $O_2$ plasma pre-treatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the contact angle decreased and the RMS surface roughness increased significantly. It is believed that the surface energy and adhesive force of the polymer surfaces increased with the $O_2$ plasma treatment and that the crystallinity and grain size of the GZO films increased. When the RF power was 100W and the treatment time was 120 sec in the $O_2$ plasma pretreatment process, the resistivity of the GZO films on the PEN substrate was $1.05\;{\times}\;10^{-3}{\Omega}-cm$, which is an appropriate range for most optoelectronic applications.

• 한국농림기상학회지
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• 제13권1호
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• pp.1-9
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• 2011

본 실험은 멀칭용 P.E 필름 종류에 따른 지온변화가 사과 우량 측지묘 생산에 미치는 영향을 구명하고자 실시하였다. 투명 P.E. 필름, 흑색 P.E. 필름 피복구와 대조구로 무피복구를 두고 대목 직경이 9.1~11.0mm인 M.9 대목을 재식하였다. 대목 재식 3주 후에 사과 '시나노 스위트' 품종을 절접하였으며, 6월 중순에는 재식 당년 측지발생을 유도하기 위하여 묘목에 BA를 살포하였다. 생육기인 4월 중순부터 11월 초순까지의 대조구의 지온은 기온보다 약 $0.7^{\circ}C$ 정도 높았고, 피복구의 지온은 대조구보다 약 $1{\sim}5^{\circ}C$ 정도 높았다. P.E. 필름 종류별 지온은 투명 P.E. 필름 피복구가 흑색 P.E. 필름 피복구보다 약 $2{\sim}3^{\circ}C$ 정도 높았다. 기상요소에 따른 지온의 일교차는 흑색 P.E. 필름 피복구가 시험구중 가장 낮았다. 사과 묘목의 생장과 측지 발달에 있어서는 피복구가 무피복구보다 생장이 양호하였다. 우량 측지묘 획득률은 흑색 P.E. 필름피복구가 가장 높았는데, 그 이유는 생육초기 지온이 대조구보다 높게 유지되면서 여름철에 지온이 $35^{\circ}C$를 넘은 적이 투명 P.E. 필름 피복구보다 많지 않았기 때문으로 추정되었다.