• Title/Summary/Keyword: Transparent electrode

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Influence of ZnO Thickness on the Optical and Electrical Properties of GZO/ZnO Bi-layered Films

  • Kim, Sun-Kyung;Kim, So-Young;Kim, Seung-Hong;Jeon, Jae-Hyun;Gong, Tae-Kyung;Kim, Daeil;Yoon, Dae Young;Choi, Dong Yong
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.4
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    • pp.198-200
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    • 2014
  • 100 nm thick Ga doped ZnO (GZO) thin films were deposited with RF magnetron sputtering on polyethylene terephthalate (PET) and ZnO coated PET substrate and then the effect of the ZnO thickness on the optical and electrical properties of the GZO films was investigated. GZO single layer films had an optical transmittance of 83.7% in the visible wavelength region and a sheet resistance of $2.41{\Omega}/{\square}$, while the optical and electrical properties of the GZO/ZnO bi-layered films were influenced by the thickness of the ZnO buffer layer. GZO films with a 20 nm thick ZnO buffer layer showed a lower sheet resistance of $1.45{\Omega}/{\square}$ and an optical transmittance of 85.9%. As the thickness of ZnO buffer layer in GZO/ZnO bi-layered films increased, both the conductivity and optical transmittance in the visible wavelength region were increased. Based on the figure of merit (FOM), it can be concluded that the ZnO buffer layer effectively increases the optical and electrical performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

Stability of ITO/Buffer Layer/TPD/Alq3/Cathode Organic Light-emitting Diode

  • Chung, Dong-Hoe;Ahn, Joon-Ho;Oh, Hyun-Seok;Park, Jung-Kyu;Lee, Won-Jae;Choi, Sung-Jai;Jang, Kyung-Uk;Shin, Eun-Chul;Kim, Tae-Wan
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.6
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    • pp.260-264
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    • 2007
  • We have studied stability in organic light-emitting diode depending on buffer layer and cathode. A transparent electrode of indium-tin-oxide(ITO) was used as an anode. An electron injection energy barrier into organic material is different depending on a work function of cathodes. Theoretically, the energy barriers for the electron injection are 1.2 eV, -0.1 eV, and 0.0 eV for Al, LiAl, and LiF/Al at 300 K, respectively. We considered the cases that holes are injected to organic light-emitting diode. The hole injection energy barrier is about 0.7 eV between ITO and TPD without buffer layer. For hole-injection buffer layers of CuPc and PEDOT:PSS, the hole injection energy barriers are 0.4 eV and 0.5 eV, respectively. When the buffer layer of CuPc and PEDOT:PSS is existed, we observed the effects of hole injection energy barrier, and a reduction of operating-voltage. However, in case of PVK buffer layer, the hole injection energy barrier becomes high(1.0 eV). Even though the operating voltage becomes high, the efficiency is improved. A device structure for optimal lifetime condition is ITO/PEDOT:PSS/TPD/$Alq_3$/LiAl at an initial luminance of $300cd/m^2$.

The Influence of Al Underlayer on the Optical and Electrical Properties of GZO/Al Thin Films

  • Kim, Sun-Kyung;Kim, So-Young;Kim, Seung-Hong;Jeon, Jae-Hyun;Gong, Tae-Kyung;Kim, Daeil;Choi, Dong-Hyuk;Son, Dong-Il
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.6
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    • pp.321-323
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    • 2013
  • 100 nm thick Ga doped ZnO (GZO) thin films were deposited with DC and RF magnetron sputtering at room temperature on glass substrate and Al coated glass substrate, respectively. and the effect of the Al underlayer on the optical and electrical properties of the GZO films was investigated. As-deposited GZO single layer films had an optical transmittance of 80% in the visible wavelength region, and sheet resistance of 1,516 ${\Omega}/{\Box}$, while the optical and electrical properties of GZO/Al bi-layered films were influenced by the thickness of the Al buffer layer. GZO films with 2 nm thick Al film show a lower sheet resistance of 990 ${\Omega}/{\Box}$, and an optical transmittance of 78%. Based on the figure of merit (FOM), it can be concluded that the thin Al buffer layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

Development of the Organic Solar Cell Technology using Printed Electronics (인쇄전자 기술을 이용한 유기 태양전지 기술 개발)

  • Kim, Jungsu;Yu, Jongsu;Yoon, Sungman;Jo, Jeongdai;Kim, Dongsoo
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.113.1-113.1
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    • 2011
  • PEMS (printed electro-mechanical system) is fabricated by means of various printing technologies. Passive and active compo-nents in 2D or 3D such as conducting lines, resistors, capacitors, inductors and TFT(Thin Film Transistor), which are printed withfunctional materials, can be classified in this category. And the issue of PEMS is applied to a R2R process in the manu-facturing process. In many electro-devices, the vacuum process is used as the manufacturing process. However, the vacuum process has a problem, it is difficult to apply to a continuous process such as a R2R(roll to roll) printing process. In this paper, we propose an ESD (electro static deposition) printing process has been used to apply an organic solar cell of thin film forming. ESD is a method of liquid atomization by electrical forces, an electrostatic atomizer sprays micro-drops from the solution injected into the capillary with electrostatic force generated by electric potential of about several tens kV. ESD method is usable in the thin film coating process of organic materials and continuous process as a R2R manufacturing process. Therefore, we experiment the thin films forming of PEDOT:PSS layer and active layer which consist of the P3HT:PCBM. The organic solar cell based on a P3HT/PCBM active layer and a PEDOT:PSS electron blocking layer prepared from ESD method shows solar-to-electrical conversion efficiency of 1.42% at AM 1.5G 1sun light illumination, while 1.86% efficiency is observed when the ESD deposition of P3HT/PCBM is performed on a spin-coated PEDOT:PSS layer.

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Self-aligned Graphene Passivation Method by Poly-4vinylphenol/Poly(melamine-co-formaldehy de) for Flexible and Wearable Electronics

  • Park, Hyeong-Yeol;Lee, In-Yeol;Park, Jin-Hong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.473-473
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    • 2013
  • 전자종이, 입을 수 있는 디스플레이, 플렉서블 터치 스크린, 투과성 면 등과 같은 차세대 플렉서블 투명 전자소자는 기계적으로 유연하고 광학적으로 투명하며 무게가 가벼운 특성을 지녀야 할 것으로 예상된다. 현재까지는Indium tin oxide (ITO), zinc tin oxide (ZTO), carbon nano tube (CNT)와 polyimide 계열의 물질들이flexible, wearable, and transparent electronics (FWTEs) 소자의 electrode, active channel, dielectric layers로 제안되어 활발히 연구되었다. 최근에는 높은 이동도(~200,000 cm2/Vs) 및 유연성(fracture strain of 30%), 투명도 (97.5% for monolayer)와 같은 특성을 갖는 그래핀에 대한 연구가 활발히 진행되고 있다. 그러나 그래핀을 차세대 플렉서블 투명 전자소자 구현에 적용하기 위해서는 플렉서블하고 투명한 절연체의 확보 및 그래핀의 진성(intrinsic) 특성 유지 등과 같은 문제점들을 해결해야 한다. 따라서, 본 연구팀에서는 그래핀 기반 플렉서블 투명 전자소자의 게이트 절연층으로 적합한 poly-4-vinylphenol/poly (melamineco-formaldehyde) (PVP/PMF) 물질을 제시하고 이에 대한 전기적 재료적 분석을 수행하였다. 특히 다양한 PVP와 PMF의 비율 및 가열(annealing 혹은 curing) 온도에서 형성된 PVP/PMF 층의 화학 및 전기적 특성을 FT-IR, I-V, 그리고 C-V 측정을 통해 확인하였다. PVP/PMF는 유기절연 물질의 하나로서 높은 유연성과 투명도를 갖고 있을 뿐만 아니라 그래핀에 적용 시 그래핀의 진성 특성을 확보할 수 있다. 이는 PVP/PMF에 존재하는 hydroxyl (-OH) 그룹과 그래핀 상에서 정공(hole)을 공급하는 것으로 알려져 있는 -OH 그룹들간의 cross-linking 메커니즘에 의한 것으로 예상된다. 마지막으로 최적화된 PVP/PMF (낮은 hysteresis 전압)를 게이트 절연층에 적용하여 polyethylene terephthalate (PET) 기판 및 연구원의 손가락 위에 95.8%의 투명도 및 0에 가까운 Dirac point를 갖는 그래핀 기반 플렉서블 투명 전자소자를 성공적으로 집적하였다.

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A performance study of organic solar cells by electrode and interfacial modification (전극과 계면간의 개질에 의한 유기태양전지의 성능 연구)

  • Kang, Nam-Su;Eo, Yong-Seok;Ju, Byeong-Kwon;Yu, Jae-Woong;Chin, Byung-Doo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.67-67
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    • 2008
  • Application of organic materials with low cost, easy fabrication and advantages of flexible device are increasing attention by research work. Recently, one of them, organic solar cells were rapidly increased efficiency with regioregular poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyricacidmethylester (PCBM) used typical material. To increased efficiency of organic solar cell has tried control of domain of PCBM and crystallite of P3HT by thermal annealing and solvent vapor annealing. [4-6] In those annealing effects, be made inefficiently efficiency, which is increased fill factor (FF), and current density by phase-separated morphology with blended P3HT and PCBM. In addition, increased conductivity by modified hole transfer layer (HTL) such as Poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS), increased both optical and conducting effect by titanium oxide (TiOx), and changed cathode material for control work function were increased efficiency of Organic solar cell. In this study, we had described effect of organic photovoltaics by conductivity of interlayer such as PEDOT:PSS and TCO (Transparent conducting oxide) such as ITO, which is used P3HT and PCBM. And, we have measured with exactly defined shadow mask to study effect of solar cell efficiency according to conductivity of hole transfer layer.

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A Study on the Improvement of Coloring in Dye-sensitized Solar Cell (염료감응형 태양전지의 착색 특성 개선 연구)

  • Seo, Hyun-Woong;Kim, Mi-Jeong;Son, Min-Kyu;Lee, Kyoung-Jun;Hong, Ji-Tae;Kim, Hee-Je
    • 한국신재생에너지학회:학술대회논문집
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    • 2007.11a
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    • pp.297-300
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    • 2007
  • In this study, we have attempted a new method to enhance the coloring of dye on the $TiO_2$ surface in the dye sensitized solar cell. In the conventional coloring process in a dye sensitized solar cells, dye is absorbed by the covalent bond between TiO2 and dye molecule while the photo-electrode coated with $TiO_2$ layer is soaked in dye solution for about 12-24 hours. But this process takes long time, so we have researched more effective and faster way than the conventional process by applying electric field. Three kinds of electric power such as direct voltage, alternating voltage and pulse voltage were applied to the transparent conducting oxide during the coloring process. As a result, we achieved improved power, fill factor and efficiency of dye-sensitized solar cell in case of applying direct voltage and pulse voltage. In contrast, alternating voltage tend to reduce the dye adsorption on the $TiO_2$ surface and hence the efficiency. We measured the absorption spectra of dye by UV-VIS spectrophotometer before and after soaking the $TiO_2$ in the dye and found no characteristic change in the dye was observed. In this study, we researched on shortening time of coloring process which spent much time in the whole process.

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Buffer and Anode Combined Ta Doped In2O2 Electrodes Prepared by Co-sputtering for PEDOT:PSS-free Organic Solar Cells

  • Lee, Hye-Min;Noh, Yong-Jin;Na, Seok-In;Park, Hyun-Woo;Chung, Kwun-Bum;Kima, Han-Ki
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.168.1-168.1
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    • 2014
  • We developed poly (3,4-ethylene dioxylene thiophene):poly (styrene sulfonic acid) (PEDOT:PSS)-free organic solar cells (OSCs) using buffer and anode combined Ta doped $In_2O_3$ (ITaO) electrodes. To optimize the ITaO electrodes, we investigated the effect of $Ta_2O_5$ doping power on the electrical, optical, and structural properties of the co-sputtered ITaO films. The optimized ITaO film doped with 20 W $Ta_2O_5$ radio frequency power showed sheet resistance of 17.11 Ohm/square, a transmittance of 93.45%, and a work function of 4.9 eV, all of which are comparable to the value of conventional ITO electrodes. The conventional bulk heterojunction OSC with ITaO anode showed a power conversion efficiency (PCE) of 3.348% similar to the OSCs (3.541%) with an ITO anode. In addition, OSCs fabricated on an ITaO electrode successfully operated without an acidic PEDOT:PSS buffer layer and showed a PCE of 2.634%, which was much higher than the comparable no buffer OSC with an ITO anode. Therefore, co-sputtered ITaO electrodes simultaneously acting as a buffer and an anode layer can be considered promising transparent electrodes for cost-efficient and reliable OSCs because they can eliminate the use of an acidic PEDOT:PSS buffer layer.

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Slot Die Coating 공법으로 코팅된 PEDOT:PSS Flexible 투명 전극의 특성 연구

  • Go, Eun-Hye;Kim, Hyo-Jung;Lee, Hye-Min;Jo, Da-Yeong;Seo, Gi-Won;Kim, Han-Gi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.201.1-201.1
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    • 2014
  • 본 연구에서는 Slot die coating 공법으로 코팅된 Poly (3-4 ethylenedioxythiophene): Poly (styrenesulfonate) (PEDOT:PSS) 박막과 비정질 ITO 박막의 전기적, 광학적, 기계적 특성을 비교 평가하여 Slot die coating 공법으로 코팅된 PEDOT:PSS 박막의 유기태양전지의 전극으로서의 적용가능성을 확인하였다. 상업용 PEDOT:PSS 박막은 보통 280 Ohm/sq.의 면저항과 가시광 영역에서 약 80%의 광투과도를 나타내며, 비정질 ITO 박막과 유사한 전기적, 광학적 특성을 나타내었다. Slot die coating 공법을 통해 제작된 PEDOT:PSS 투명 전극과 비정질 ITO 투명 전극의 기판 휘어짐에 따른 전기적 안정성을 비교 평가하기 위해 25 mm에서 1 mm까지 radius 변화에 따른 저항의 변화를 측정하였다. 그 결과, 비정질 ITO 투명 전극 대비 PEDOT:PSS 투명 전극이 더 우수한 전기적 안정성을 나타냄을 확인하였다. 또한, 다양한 Bending test (Inner/Outer bending, Rolling, Stretching, Twisting) 를 통해 비정질 ITO 투명 전극 보다 Slot die coating 공법으로 코팅된 PEDOT:PSS 투명 전극의 우수한 기계적 특성을 확인하였다. 이를 바탕으로 Flexible 유기태양전지에의 적용 가능성을 알아보기 위해 Slot die coating 공법으로 코팅된 PEDOT:PSS 투명 전극과 비정질 ITO 투명 전극을 유기태양전지의 anode 층에 적용하여 각각 제작하고 그 특성을 평가하였다. 비정질 ITO 투명 박막을 적용한 유기태양전지 대비 Slot die coating 공법으로 코팅된 PEDOT:PSS 투명 박막으로 제작한 유기태양전지에서 더 높은 효율이 나타났으며, 이로써 Slot die coating 공법으로 코팅된 PEDOT:PSS 투명 전극의 Flexible 유기태양전지로써의 적용 가능성을 확인하였다.

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탄소나노튜브-그래핀 하이브리드 박막을 이용한 투명전극과 전계효과트랜지스터로의 응용

  • Kim, Seong-Ho;Song, U-Seok;Jeong, Min-Uk;Gang, Min-A;Lee, Seon-Suk;Im, Jong-Seon;Hwang, Jin-Ha;Myeong, Seong;An, Gi-Seok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.177.1-177.1
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    • 2014
  • 단일벽 탄소나노튜브(single-wall carbon nanotube)와 그래핀(graphene)과 같은 저차원 구조의 탄소물질은 우수한 기계적, 전기적, 열적 광학적 특성으로 인해 투명하고 유연한 차세대 전자소자로의 응용(투명전극, 투명트랜지스터, 투명센서 등)을 위한 연구가 활발히 진행되고 있다. 본 연구에서는 단일벽 탄소나노튜브와 단일층 그래핀을 이용한 하이브리드 박막을 제작하여 투명전극(transparent electrode)과 전계효과 트랜지스터(field effect transistors)로의 응용 가능성을 연구하였다. 하이브리드 박막의 제작은 간단한 방법으로 단일벽 탄소나노튜브가 스핀 코팅된 구리 호일 위에 열 화학기상증착법(thermal chemical vapor deposition)을 통해 제작 하였다. 제작 과정 중 탄소나노튜브의 스핀코팅 조건을 최적화하여 하이브리드 박막에서 탄소나노 튜브의 밀도와 정렬을 제어하였으며 하이브리드 박막 제작 후 스핀 코팅 방향에 따른 박막의 저항을 측정하여 단일벽 탄소나노튜브의 코팅 방향에 따라 박막의 저항이 달라지는 모습을 확인할 수 있었다. 하이브리드 박막의 투명전극 특성을 확인 한 결과 $300{\Omega}/sq$의 면저항에 96.4%의 우수한 투과도를 보이는 것을 확인 할 수 있었다. 또한 하이브리드 박막은 CVD 그래핀과 비교하여 향상된 와 on-state current를 보이는 것을 확인 할 수 있었다. 우리는 단일벽 탄소나노튜와 단일층 그래핀으로 이루어진 하이브리드 박막이 앞으로의 투명하고 유연한 소자제작 연구에 있어 새로운 투명 전극 및, 트랜지스터 제작 방법을 제시 할 수 있을 것이다.

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