• Title/Summary/Keyword: Transparent electrode

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Slot Die Coating 공법으로 코팅된 PEDOT:PSS Flexible 투명 전극의 특성 연구

  • Go, Eun-Hye;Kim, Hyo-Jung;Lee, Hye-Min;Jo, Da-Yeong;Seo, Gi-Won;Kim, Han-Gi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.201.1-201.1
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    • 2014
  • 본 연구에서는 Slot die coating 공법으로 코팅된 Poly (3-4 ethylenedioxythiophene): Poly (styrenesulfonate) (PEDOT:PSS) 박막과 비정질 ITO 박막의 전기적, 광학적, 기계적 특성을 비교 평가하여 Slot die coating 공법으로 코팅된 PEDOT:PSS 박막의 유기태양전지의 전극으로서의 적용가능성을 확인하였다. 상업용 PEDOT:PSS 박막은 보통 280 Ohm/sq.의 면저항과 가시광 영역에서 약 80%의 광투과도를 나타내며, 비정질 ITO 박막과 유사한 전기적, 광학적 특성을 나타내었다. Slot die coating 공법을 통해 제작된 PEDOT:PSS 투명 전극과 비정질 ITO 투명 전극의 기판 휘어짐에 따른 전기적 안정성을 비교 평가하기 위해 25 mm에서 1 mm까지 radius 변화에 따른 저항의 변화를 측정하였다. 그 결과, 비정질 ITO 투명 전극 대비 PEDOT:PSS 투명 전극이 더 우수한 전기적 안정성을 나타냄을 확인하였다. 또한, 다양한 Bending test (Inner/Outer bending, Rolling, Stretching, Twisting) 를 통해 비정질 ITO 투명 전극 보다 Slot die coating 공법으로 코팅된 PEDOT:PSS 투명 전극의 우수한 기계적 특성을 확인하였다. 이를 바탕으로 Flexible 유기태양전지에의 적용 가능성을 알아보기 위해 Slot die coating 공법으로 코팅된 PEDOT:PSS 투명 전극과 비정질 ITO 투명 전극을 유기태양전지의 anode 층에 적용하여 각각 제작하고 그 특성을 평가하였다. 비정질 ITO 투명 박막을 적용한 유기태양전지 대비 Slot die coating 공법으로 코팅된 PEDOT:PSS 투명 박막으로 제작한 유기태양전지에서 더 높은 효율이 나타났으며, 이로써 Slot die coating 공법으로 코팅된 PEDOT:PSS 투명 전극의 Flexible 유기태양전지로써의 적용 가능성을 확인하였다.

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탄소나노튜브-그래핀 하이브리드 박막을 이용한 투명전극과 전계효과트랜지스터로의 응용

  • Kim, Seong-Ho;Song, U-Seok;Jeong, Min-Uk;Gang, Min-A;Lee, Seon-Suk;Im, Jong-Seon;Hwang, Jin-Ha;Myeong, Seong;An, Gi-Seok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.177.1-177.1
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    • 2014
  • 단일벽 탄소나노튜브(single-wall carbon nanotube)와 그래핀(graphene)과 같은 저차원 구조의 탄소물질은 우수한 기계적, 전기적, 열적 광학적 특성으로 인해 투명하고 유연한 차세대 전자소자로의 응용(투명전극, 투명트랜지스터, 투명센서 등)을 위한 연구가 활발히 진행되고 있다. 본 연구에서는 단일벽 탄소나노튜브와 단일층 그래핀을 이용한 하이브리드 박막을 제작하여 투명전극(transparent electrode)과 전계효과 트랜지스터(field effect transistors)로의 응용 가능성을 연구하였다. 하이브리드 박막의 제작은 간단한 방법으로 단일벽 탄소나노튜브가 스핀 코팅된 구리 호일 위에 열 화학기상증착법(thermal chemical vapor deposition)을 통해 제작 하였다. 제작 과정 중 탄소나노튜브의 스핀코팅 조건을 최적화하여 하이브리드 박막에서 탄소나노 튜브의 밀도와 정렬을 제어하였으며 하이브리드 박막 제작 후 스핀 코팅 방향에 따른 박막의 저항을 측정하여 단일벽 탄소나노튜브의 코팅 방향에 따라 박막의 저항이 달라지는 모습을 확인할 수 있었다. 하이브리드 박막의 투명전극 특성을 확인 한 결과 $300{\Omega}/sq$의 면저항에 96.4%의 우수한 투과도를 보이는 것을 확인 할 수 있었다. 또한 하이브리드 박막은 CVD 그래핀과 비교하여 향상된 와 on-state current를 보이는 것을 확인 할 수 있었다. 우리는 단일벽 탄소나노튜와 단일층 그래핀으로 이루어진 하이브리드 박막이 앞으로의 투명하고 유연한 소자제작 연구에 있어 새로운 투명 전극 및, 트랜지스터 제작 방법을 제시 할 수 있을 것이다.

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Electrical, Optical and Structural Properties of ZrO2 and In2O3 Co-sputtered Electrdoes for Organic Photovoltaics (OPVs)

  • Cho, Da-Young;Shin, Yong-Hee;Chung, Kwun-Bum;Na, Seok-In;Kim, Han-Ki
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.473.1-473.1
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    • 2014
  • We report on the characteristics of Zr-doped $In_2O_3$ (IZrO) films prepared by DC-RF magnetron cosputtering of $In_2O_3$ and $ZrO_2$ targets for use as a transparent electrode for high efficient organic solar cells (OSCs). The effect of $ZrO_2$ doping power on electrical, optical, structural, and surface morphology of the IZrO film was investigated in detail. At optimized $ZrO_2$ RF power of 50 W, the IZrO film exhibited a low sheet resistance of 20.71 Ohm/square, and a high optical transmittance of 83.9 %. Furthermore, the OSC with the IZrO anode showed a good cell-performance: fill factor of 61.71 %, short circuit current (Jsc) of $8.484mA/cm^2$, open circuit voltage (Voc) of 0.593 V, and power conversion efficiency (PCE) of 3.106 %. In particular, the overall OSC characteristics of the cell with the IZrO anode were comparable to those of the OSC with the conventional Sn-doped $In_2O_3$ (FF of 65.03 %, Jsc of $8.833mA/cm^2$, Voc of 0.608 V, PCE of 3.495 %), demonstrating that the IZrO anode is a promising alternative to ITO anode in OSCs.

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은 도핑 효과를 이용한 그래핀 투명 전도성 필름의 전기적 특성 향상

  • Jeong, Sang-Hui;Lee, Su-Il;Kim, Yu-Seok;Song, U-Seok;Kim, Seong-Hwan;Cha, Myeong-Jun;Park, Sang-Eun;Min, Gyeong-Im;Park, Jong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.566-566
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    • 2012
  • 그래핀(Graphene)은 모든 탄소 동소체의 기본구성 요소로 2 차원 결정구조를 가지며, 양자홀 효과(quantum Hall effect), 뛰어난 열 전도도, 고 탄성, 광학적 투과성 등과 같은 탁월한 물리적 성질을 보이는 물질이다. 이러한 그래핀의 우수한 특성은 전계 효과 트랜지스터(field effect transistor), 화학/바이오 센서, 투명 전극(transparent electrode) 등의 다양한 전자소자를 개발하는 응용 가능하다. 그 중, 그래핀 투명전극의 제조는 가장 응용가능성이 높은 분야이다. 현재 투명전극 물질로는 인듐-주석 산화물(indium tin oxide; ITO)가 널리 이용되고 있으나, 인듐의 고갈로 인한 공급부족 문제 및 고 생산비용, 휘어지지 않는 취성 등의 단점을 지니고 있다. 따라서, 우수한 광학적 투과성과 전기전도성을 지닌 그래핀이 ITO의 대체 물질로서 각광받고 있다.[1-5] 본 연구에서는 그래핀의 투명전도필름의 응용을 위해 면저항을 낮추기 위한 방법으로 화학적 도핑(doping)을 이용하였다. 그래핀은 구리(copper; Cu) 호일을 촉매로 사용하여 열 화학증착법(Thermal Chemical Vapor Deposition)을 이용하여 합성하였다. 합성된 그래핀은 PMMA(Poly(methyl methacrylate)) 전사법을 이용하여 산화실리콘(SiO2) 기판에 전사 후, 염화은(AgCl)과 클로로벤젠(C6H5Cl)으로 만든 콜로이드(colloid) 용액에 디핑(dipping)하여 그래핀에 은 입자를 도핑 하였다. 그 결과, 은 입자 도핑 농도에 따라 면저항이 감소하는 양상을 보였다. 제작된 그래핀 투명전도성 필름의 투과도는 자외선-가시광선-근적외선 분광법(UV-Vis-NIR spectroscopy)를 이용하여 측정하였고, 라만 분광법(Raman spectroscopy)을 통해 그래핀 필름의 질적 우수성과 성장 균일도를 조사하였다.

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Carbon Nanotube Heater Generating High Heat Flux

  • Kang, Yong-Pil;Lee, Hyun-Chang;Kim, Duck-Jong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.530-530
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    • 2012
  • Many practical applications of carbon nanotubes(CNTs) have been proposed and there have been attempts to utilize CNT films as transparent electrodes for solar cells and displays. Our group has considered the use of the CNT film as a thin film heater (TFH) and proposed it for the first time and reported the thermal behavior of the TFH made of single walled CNTs. However, due to the relatively high electrical resistance of the CNT film, using the TFH in application areas requiring high heat flux has been a difficult problem. To overcome this obstacle, we adopted a 'branch electrodes' concept to increase the film conductance dramatically. If two branch electrodes are inserted into a TFH whose original electrical resistance is R, the total resistance will be reduced to R/9. Because of the increased aspect ratio, the resistance of each segmented TFH will be reduced to R/3. Furthermore, since they are connected in parallel, the total resistance reduces to R/9. This could be extended to n branch electrodes, and the total resistance of the film will be reduced to R/(n+1)2, if the resistance of electrodes are negligibly small. We fabricated the heaters with different number of branch electrodes. The number of branch electrodes of the fabricated heaters are 0, 2, 4, 8 and their electrical resistance are 101.4, 39.5, 20.0, $15.4{\Omega}$, respectively. We applied 20V to each heater and monitored the temperature variations. We could achieve high heating temperature even with low voltage supply. This technique could be applied to relevant industrial applications which need high power film heater.

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Flexibility Improvement of InGaZnO Thin Film Transistors Using Organic/inorganic Hybrid Gate Dielectrics

  • Hwang, B.U.;Kim, D.I.;Jeon, H.S.;Lee, H.J.;Lee, N.E.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.341-341
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    • 2012
  • Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

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Development of Online Speller using Non-contact Blink Detection Glasses (비접촉 눈 깜박임 측정 안경형 디바이스를 이용한 실시간 스펠러의 구현)

  • Lee, Jeong Su;Lee, Hong Ji;Lee, Won Kyu;Lim, Yong Gyu;Park, Kwang Suk
    • Journal of Biomedical Engineering Research
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    • v.36 no.6
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    • pp.283-290
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    • 2015
  • We proposed blink based online speller for the locked-in syndrome (LIS) patients, paralyzed in nearly all voluntary muscles expect for the eyes, with a simple and easy-to-use eye blink detection glasses. Electrooculogram (EOG) is the golden standard method of eye movement or blink measurement with Ag/AgCl electrodes. However, this method has several drawbacks such as skin irritation and dehydration of conductive gel. To resolve the shortcomings, we used a blink detection system based on a transparent capacitively coupled electrode, which is conductive indium tin oxide (ITO) films. The films make it possible to measure eye blink without direct skin contact and obstruction of field of view. We finally developed user-friendly blink based online speller with the blink detection system. To classify voluntary and non-voluntary blink, we used the double blink for command of the speller. The online speller experiment result with six healthy subjects shows that mean accuracy is 98.96% and letter per minute (LPM) is 4.73, which are better result by comparison with conventional P300 or auditory brain-computer interface (BCI) paradigm. The result of the experiment demonstrates the possibility of applying the proposed system as a communication method for the LIS patients.

Property change of organic light-emitting diodes due to an ITO surface reformation (ITO 표면 개질에 의한 유기 발광 소자의 특성 변화)

  • Na, Su-Hwan;Joo, Hyun-Woo;An, Hui-Chul;Lee, Suk-Jae;Oh, Hyun-Suk;Min, Hang-Gi;Kim, Tae-Wan;Lee, Ho-Sik;Lee, Won-Jae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.411-412
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    • 2008
  • We have studied a property change of organic light-emitting diodes (OLED) due to an indium tin oxide (ITO) surface reformation. The characteristics of OLED were improved by oxygen plasma processing of an ITO in this work. ITO is widely used as a transparent electrode in light-emitting devices, and the OLED device performance is sensitive to the surface properties of the ITO. The OLED devices with the structure of ITO/TPD(50nm)/$Alq_3$(70nm)/LiF(0.5nm)/Al(100nm) were fabricated, and the surface properties of ITO were investigated by using various characterization techniques. The oxygen plasma process of an ITO was processed by using RF power of 125W and oxygen partial pressure of $2\times10^{-2}$ Torr. The oxygen plasma processing of an ITO processed for 0/1/2/3/4min. Current-voltage-luminance characteristics of the devices show that turn-on voltage is 4V for 2min device and the luminance reaches about 27,000cd/$m^2$ for 4min device. The current efficiency shows that 3min device becomes saturated to be about 8cd/ A. They show that emission was from the $Alq_3$ layer, because the peak wavelength is about 525nm. View angle-dependent emission spectra show that the emission intensity decreases as the angle increases.

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Indium doped ZnO:Al thin films prepared by pulsed laser deposition for transparent conductive oxide electrode applications (펄스 레이저 방법으로 증착된 투명 산화물 전극용 인듐이 도핑된 ZnO:Al 박막)

  • Xian, Cheng-Ji;Lee, Chang-Hyun;Lee, Ye-Na;Seong, Nak-Jin;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.27-27
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    • 2008
  • The different concentration Indium doped ZnO:Al films were grown on glass substrates (Corning 1737) at $200^{\circ}C$ by pulsed laser deposition. The indium doping in AZO films shows the critical effect on the crystallinity, resistivity, and optical properties of the films. The AZO films doped with 0.3 atom % indium content exhibit the highest crystallinity, the lowest resistivity of $4.5\times10^{-4}\Omega$-cm, and the maximum transmittance of 93%. The resistivity of the indium doped-AZO films is strongly related with the crystallinity of the films. The carrier concentration in the indium doped-AZO films linearly increases with increasing indium concentration. The mobility of the AZO films with increasing indium concentration was reduced with an increase in carrier concentration and the decrease in mobility was attributed to the ionized impurity scattering mechanism. In an optical transmittance, the shift of the optical absorption edge to shorter wavelength strongly depends on the electronic carrier concentration in the films.

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Trend on Recycling Technologies of Tin Scrap by Material Flows and Patent Analysis (물질흐름 및 특허분석을 통한 주석 스크랩 재활용 기술 동향)

  • Kim, Yong Hwan;Son, Seong Ho;Choi, Han Shin;Han, Chul Woong;Kim, Tae Bum;Ahn, Jae Woo;Kim, Hong In;Lee, Ki Woong
    • Resources Recycling
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    • v.23 no.3
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    • pp.61-70
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    • 2014
  • Tin has been widely used to solder, tin plated steel, bronze alloy, sputtering target for transparent electrode and chemical additives. It has been widely reported to the recycling technologies for tin scraps because of the scarcity and economic efficiency of the reserve. This study was analyzed by using open/registered patents KR, US, CN, JP and EP related to recycling technologies for processing scrap, sludges, waste fluid for plating process and spent alloy containing tin in between 1970 and 2013. Patents were collected using key-words searching and filtered by filtering criteria. The trends of the patents were analyzed by year, country, appliant and technology.