• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.675-678
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• 2004

[ $CuAlO_2$ ] was used as P-type transparent conducting oxide. $CuAlO_2$ ceramics was obtained from heating a stoichiometric mixture of $Cu_2O$ and $Al_2OH_3$ at $1200^{\circ}C$ for 6h. $CuAlO_2$ ceramics were doped by the rate of 0, 5, 7 and 10% of the $BeSO_4{\cdot}4H_2O$. Sintered ceramics were investigated by X-ray diffraction (XRD) and electrical measurements. The room temperature conductivity of the ceramics, which were doped with $BeSO_4{\cdot}4H_2O$ 5wt% was of the order of $3.19\times10^{-3}S\;cm^{-1}$, and the density was $4.98g/cm^3$. Therefor the conductivity and density in $BeSO+4{\cdot}4H_2O$ 5wt% were better than other cases. Additionally, Seebeck cofficient measurements revealed that these ceramics were p-type semiconductors and the ceramic conductivity increased with the growth temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.270-271
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• 2008

Antimony (6 wt%) doped tin oxide (ATO) films to improve conductivity were deposited on 7059 coming glass by RF magnetron sputtering method for application to transparent electrodes. The ATO film was deposited at a working pressure of 5 mTorr and RF power of 175 W. We investigated the effects of the post-annealing temperature on structural, electrical and optical properties of the ATO films. The films were annealed at temperatures ranging from $300^{\circ}C$ to $600^{\circ}C$ in step of $100^{\circ}C$ using RTA equipment in vacuum ambient. X-ray diffraction (XRD) measurements showed the ATO films to be crystallized with a strong (101) preferred orientation as the annealing temperature increased. Electrical resistivity decreased significantly with annealing temperatures up to $600^{\circ}C$. ATO film annealed at temperature of $600^{\circ}C$ showed the lowest resistivity of $5.6\times10^{-3}\Omega$-cm. Optical transmittance increased significantly with annealing temperatures up to $600^{\circ}C$. The highest transmittance was 90.8 % in the visible range from 400 to 800 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.255-255
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• 2011

Zinc oxide based thin films have been extensively studied in recent several years because they have very interesting properties and zinc oxide is non-poisonous, abundant and cheap material. ZnO films are employed in different applications like transparent conductive layers in solar cells, protective coatings and so on. Wide industrial application of the ZnO films requires of development of cheap, effective and scalable technology. Typically used technologies don't completely satisfy the industrial requirements. In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photoelectron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Increasing of the oxygen content in the gas mixture during deposition allow to obtain high-resistive protective and insulation coatings with high adhesion to the metallic surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.67-67
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• 2008

Application of organic materials with low cost, easy fabrication and advantages of flexible device are increasing attention by research work. Recently, one of them, organic solar cells were rapidly increased efficiency with regioregular poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyricacidmethylester (PCBM) used typical material. To increased efficiency of organic solar cell has tried control of domain of PCBM and crystallite of P3HT by thermal annealing and solvent vapor annealing. [4-6] In those annealing effects, be made inefficiently efficiency, which is increased fill factor (FF), and current density by phase-separated morphology with blended P3HT and PCBM. In addition, increased conductivity by modified hole transfer layer (HTL) such as Poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS), increased both optical and conducting effect by titanium oxide (TiOx), and changed cathode material for control work function were increased efficiency of Organic solar cell. In this study, we had described effect of organic photovoltaics by conductivity of interlayer such as PEDOT:PSS and TCO (Transparent conducting oxide) such as ITO, which is used P3HT and PCBM. And, we have measured with exactly defined shadow mask to study effect of solar cell efficiency according to conductivity of hole transfer layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.410-410
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• 2012

투명 전도성 TCO (Transparent Conductivity Oxide)박막 중 ITO (Indium Tin Oxide) 박막은 n-type의 전도특성을 갖는 산화물로서 가시광선 영역에서의 높은 투과율, 전기 전도도, 넓은 밴드갭을 나타내기 때문에 디스플레이 및 태양전지 분야에 널리 사용 되어 지고 있다. 이 실험에서는 ITO 증착시 산소 유량의 변화에 따라 특성의 변화를 관찰하고자 실험을 진행 하였다. 실험에서 산소 유량은 0 sccm에서 12 sccm까지 변화를 주었으며, ITO는 RF 마그네트론 스퍼터를 이용하여 유리위에 증착하였다. 실험에서 인가된 RF power는 2 kW, 13.56 MHz, 공정 압력은 $4.5{\times}10^{-6}torr$에서 진행하였다. 유리와 타겟 사이의 거리는 200 mm로 고정하였으며, 온도는 상온에서 공정을 진행하였다. 증착된 ITO의 전기전도도(${\sigma}$)는 3 sccm까지는 증가하는 경향을 보이다가 그 이후부터는 감소하는 것을 확인 할 수 있었다. 투과율과 이차전자방출계수의 결과 또한 전기전도도와 유사한 경향성을 보여 주었다. 이를 통해 3 sccm의 산소 유량으로 증착된 ITO의 전기적 특성이 가장 좋은 것으로 확인이 되었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.90-90
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• 2011

Transparent conducting oxide (TCO) films have been intensively utilized in the electric applications, such as, displays, lightings and solar cells due to the good electric conductivity with an excellent transmittance of the visible light. We, herein present an excellent Al-doped ZnO film (AZO), which has been fabricated by co-sputtering method. An as-deposited AZO film had an optical transmittance of 84.78% at 550 nm and a resistivity of $7.8{\times}10^{-3}{\Omega}cm$. A rapid annealing process significantly improved the optical transmittance and electrical resistivity of the AZO film to 99.67% and $1{\times}10^{-3}{\Omega}cm$, respectively. The fabricated AZO film was fabricated for a metal-semiconductor-metal (MSM) structure. The AZO film-embedding MSM device was highly responsive to a UV light.

• Journal of the Korean institute of surface engineering
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• v.30 no.4
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• pp.223-230
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• 1997

Tungsten oxide and nickel oxide thin films were deposited onto ITO(Indium Tin Oxide) transparent glass by the E-beam evaporation and were used as a cathode and an anode for the EC(Electrochromic) smart window, respectively. Stoichiometric structures of the deposited films were investigated by the implementation of XPS(X-ray Photoelectron Spectroscopy) analysis and the results were $WO_{2.42}$ and $NiO_{0.44}$. This oxygen deficincy might affect affect the transparency of the thin films. The electrolyte for the EC smart windows was PAN-$LiCIO_4$ conducting polymer. EC(Ethylene Carbonate)and PC(Propylene Carbonate) were added as plasticizer to enhance ion conductivity. When the weight ratio of the EC : PC was 3 : 1, transmission difference and cycle life performance were tested. Polymer EC windows showed 40% $\Delta$T at 1.5V operating volage for 3,200 cycles. Structural degradation was observed by the SIMS(Secondary Ion Mass Spectroscopy) analysis and it was confirmed that structural degradation of polymer caused by the solvent evaporation was the main cause to degrade EC smart windows.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.352.1-352.1
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• 2014

Indium Tin Oxide (ITO) films are the most extensively studied and commonly used as ones of TCO films. The ITO films having a high electric conductivity and high transparency are easily fabricated on glass substrate at a substrate temperature over $250^{\circ}C$. However, glass substrates are somewhat heavy and brittle, whereas plastic substrates are lightweight, unbreakable, and so on. For these reasons, it has been recently suggested to use plastic substrates for flexible display application instead of glass. Many reaearchers have tried to produce high quality thin films at rood temperatures by using several methods. Therefore, amorphous ITO films excluding thermal process exhibit a decrease in electrical conductivity and optical transparency with time and a very poor chemical stability. However the amorphous Indium Gallium Zinc Oxide (IGZO) offers several advantages. For typical instance, unlike either crystalline or amorphous ITO, same and higher than a-IGZO resistivity is found when no reactive oxygen is added to the sputter chamber, this greatly simplifies the deposition. We reported on the characteristics of a-IGZO thin films were fabricated by RF-magnetron sputtering method on the PEN substrate at room temperature using 3inch sputtering targets different rate of Zn. The homogeneous and stable targets were prepared by calcine and sintering process. Furthermore, two types of IGZO TFT design, a- IGZO source/drain material in TFT and the other a- ITO source/drain material, have been fabricated for comparison with each other. The experimental results reveal that the a- IGZO source/drain electrode in IGZO TFT is shown to be superior TFT performances, compared with a- ITO source/drain electrode in IGZO TFT.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.2
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• pp.1-11
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• 2014

Flexible transparent conductive electrodes (TCEs) have recently attracted a great deal of attention owing to rapid advances in flexible electronic devices, such as flexible displays, flexible photovoltanics, and e-papers. As the performance and reliability of flexible electronics are critically affected by the quality of TCE films, it is imperative to develop TCE films with low resistivity and high transparency as well as high flexibility. Indium tin oxide (ITO) has been the most dominant transparent conducting material due to its high optical transparency and electrical conductivity. However, ITO is susceptible to cracking and delamination when it is bent or deformed. Therefore, various types of flexible TCEs, such as carbon nanotube, conducting polymers, graphene, metal mesh, Ag nanowires (NWs), and metal mesh have been extensively investigated. Among several options to replace ITO film, Ag NWs and metal mesh have been suggested as the promising candidate for flexible TCEs. In this paper, we focused on Ag NWs and metal mesh, and summarized the current development status of Ag NWs and metal mesh. The several critical issues such as high contact resistance and haze are discussed, and newly developed technologies to resolve these issues are also presented. In particular, the flexibility and durability of Ag NWs and metal mesh was compared with ITO electrode.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.12
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• pp.2014-2018
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• 2016

Transparent, conductive electrode films, showing the particular characteristics of good conductivity and high transparency, are of considerable research interest because of their potential for use in opto-electronic applications, such as smart window, photovoltaic cells and flat panel displays. Multilayer transparent electrodes, having a much lower electrical resistance than widely-used transparent conducting oxide electrodes, were prepared by using RF/DC magnetron sputtering system. The multilayer structure consisted of three layers, [NiInZnO(NIZO)/Ag/NIZO]. The optical and electrical properties of the multilayered NIZO/Ag/NIZO structure were investigated in relation to the thickness of each layer. The optical and electrical characteristics of multilayer structures have been investigated as a function of the Ag and NIZO film thickness. High-quality transparent conductive films have been obtained, with sheet resistance of $9.8{\Omega}/sq$ for Ag film thickness of 8 nm. Also the multilayer films of inserted Ag 8 nm thickness showed a high optical transmittance above 93% in the visible range. The electrical and optical properties of the new multilayer films were mainly dependent on the thickness of Ag insertion layer.