• 제목/요약/키워드: Transparent conducting

검색결과 505건 처리시간 0.037초

초박막 산화금속 필름을 이용한 유연투명전극 (Ultrathin Partially Oxidized Metal Films and Their Applications in Flexible Transparent Conducting Electrodes)

  • 윤정흠;이건환
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2015년도 추계학술대회 논문집
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    • pp.165-165
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    • 2015
  • 유연 폴리머 기판상에 광 투과 특성을 개선한 초박형 금속 필름 기반 투명전극 소재를 개발하였다. 본 유연 투명전극의 높은 광 투과성과 전도성으로부터 유연소자의 성능향상을 검증하였다.

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유연소자용 나노구조 투명전극소재 (Nanostructured Transparent Conducting Electrodes for Flexible Devices)

  • 윤정흠;이건환
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2014년도 추계학술대회 논문집
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    • pp.57-57
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    • 2014
  • 유연 폴리머 기판 상에 광 투과 특성을 기존 전극 대비 혁신적으로 개선한 2차원, 3차원 산화물 나노 구조 전극을 개발하였다. 본 유연투명전극의 높은 광 투과 특성으로 인한 유연소자의 성능 향상을 유연 유기 태양전지 제조를 통해 입증하였다.

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Improvement of hole transport from p-Si with interfacial layers for silicon solar cells

  • Oh, Gyujin;Kim, Eun Kyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.239.2-239.2
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    • 2016
  • Numerous studies and approaches have been performed for solar cells to improve their photoelectric conversion efficiencies. Among them, the study for electrode containing transparent conducting oxide (TCO) layers is one of issues as well as for the cell structure based on band theory. In this study, we focused on an interfacial layer between p-type silicon and indium tin oxide (ITO) well-known as TCO materials. According to current-voltage characteristics for the sample with the interfacial layers, the improvement of band alignment between p-type silicon and ITO was observed, and their ohmic properties were enhanced in the proper condition of deposition. To investigate cause of this improvement, spectroscopic ellipsometry and ultraviolet photoelectron spectroscopy were utilized. Using these techniques, band alignment and defect in the band gap were examined. The major materials of the interfacial layer are vanadium oxide and tungsten oxide, which are notable as a hole transfer layer in the organic solar cells. Finally, the interfacial layer was applied to silicon solar cells to see the actual behavior of carriers in the solar cells. In the case of vanadium oxide, we found 10% of improvement of photoelectric conversion efficiencies, compared to solar cells without interfacial layers.

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Fabrication of Al-doped ZnO Thin Films by Vertical In-line DC Magnetron Sputtering

  • Heo, Gi-Seok;Kim, Tae-Won;Lee, Jong-Ho
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 춘계학술대회 논문집 센서 박막재료연구회 및 광주 전남지부
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    • pp.41-41
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    • 2008
  • Al-doped ZnO (AZO) thin films have been fabricated by vertical in-line dc magnetron sputtering for transparent conducting oxides (TCOs) applications. The effects of substrate temperature and dc power on the characteristics of AZO thin films are investigated and also optimized the process conditions to get the best electrical and optical properties. The fabricated thin films show a good electrical and optical uniformity within ${\pm}5%$ over the whole area of substrate ($200mm\;{\times}\;200mm$) ; the minimum resistivity of $8\;{\times}\;10^{-4}\;{\Omega}cm$ and the average transmittance of 90% within the visible wavelength range. We have found that the band gap ($E_g$) increases with increasing substrate temperature and dc power, whereas the crystallinity is getting improved with increasing substrate temperature. The binding energy of Zn $2p_{3/2}$ and O 1s is observed to decrease as the substrate temperature increases.

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In-line 마그네트론 스퍼터 장치를 사용하여 산소 분위기에서 제작한 Ag 박막의 특성 (Properties of Ag Thin Films Deposited in Oxygen Atmosphere Using in- line Magnetron Sputter System)

  • 구대영;김원목;조상무;황만수;이인규;정병기;이택성;이경석;조성훈
    • 한국재료학회지
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    • 제12권8호
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    • pp.661-668
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    • 2002
  • A study was made to examine the electrical, compositional, structural and morphological properties of Ag thin films deposited by DC magnetron sputtering in $O_2$ atmosphere with deposition temperature from room temperature to 15$0^{\circ}C$ using in-line sputter system. The Ag films deposited at temperature above $100^{\circ}C$ in oxygen atmosphere gave a similar specific resistivity to and even lower oxygen content than those deposited using pure Ar sputter gas The Ag films deposited with pure Ar gas was mainly composed of crystallites with [111] preferred orientation, while, for those deposited in oxygen atmosphere, more than 50% of the volume was composed of crystallites with [100] orientation. The difference in the micro structure did not cause any difference in the specific resistivity of Ag films. The results showed that the transparent conducting oxide films and the Ag films could be processed sequentially in the same deposition chamber with careful control of deposition temperature, which might result in a cost reduction for constructing the large scale in-line deposition system.