• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.10
• /
• pp.821-825
• /
• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO TFTs having different channel thicknesses deposited at low temperature. The ZnO films were deposited as active channel layer on $Si_3N_4/Ti/SiO_2/p-Si$ substrates by RF magnetron sputtering at $100^{\circ}C$ without additional annealing. Also, the ZnO thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film was deposited as gate insulator by PE-CVD at $150^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method. The fabricated devices have different threshold slop, field effect mobility and subthreshold slop according to channel thickness. This characteristics are related with ZnO crystal properties analyzed with XRD and SPM. Electrical characteristics of 60 nm ZnO TFT (W/L = $20\;{\mu}m/20\;{\mu}m$) exhibited a field-effect mobility of $0.26\;cm^2/Vs$, a threshold voltage of 8.3 V, a subthreshold slop of 2.2 V/decade, and a $I_{ON/OFF}$ ratio of $7.5\times10^2$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.285-285
• /
• 2013

Recently, hexagonal boron nitride (h-BN), which is III-V compound of boron and nitride by strong covalent sp2 bonds has gained great interests as a 2 dimensional insulating material since it has honeycomb structure with like graphene with very small lattice mismatch (1.7%). Unlike graphene that is semi-metallic, h-BN has large band gap up to 6 eV while providing outstanding properties such as high thermal conductivity, mechanical strength, and good chemical stability. Because of these excellent properties, hBN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Low pressure and atmospheric pressure chemical vapor deposition (LPCVD and APCVD) methods have been investigated to synthesize h-BN by using ammonia borane as a precursor. Ammonia borane decomposes to polyiminoborane (BHNH), hydrogen, and borazine. The produced borazine gas is a key material that is a used for the synthesis of h-BN, therefore controlling the condition of decomposed products from ammonia borane is very important. In this paper, we optimize the decomposition of ammonia borane by investigating temperature, amount of precursor, and other parameters to fabricate high quality monolayer h-BN. Synthesized h-BN is characterized by Raman spectroscopy and its absorbance is measured with UV spectrophotometer. Topological variations of the samples are analyzed by atomic force microscopy. Scanning electron microscopy and Scanning transmission Electron microscopy are used for imaging and analysis of structures and surface morphologies.

• Journal of the Korean institute of surface engineering
• /
• v.47 no.5
• /
• pp.239-243
• /
• 2014

The electrical and optical properties of amorphous In-Tin-Zinc-Oxide(ITZO) deposited at room temperature using rf-magnetron sputtering were investigated. The amorphous ITZO thin films were obtained at the composition of In:Sn:Zn = 6:2:2, 4:3:3, and 2:4:4, but the ITZO (8:1:1) showed a crystalline phase of bixbyite structure of In2O3. The resistivity of ITZO could be controlled by oxygen pressure in the sputtering ambient. The resistivity of post-annealed ITZO thin films exhibited the dependence on the amount of Indium. Optical energy band gap and transmittance increased as the amount of indium in ITZO increased. For the device application with ITZO, the bottom-gated thin-film transistor using ITZO as a active channel layer was fabricated. It showed a threshold voltage of 1.42V and an on/off ratio of $5.63{\times}10^7$ operated with saturation field-effect mobility of $14.2cm^2/V{\cdot}s$.

• Korean Journal of Optics and Photonics
• /
• v.19 no.4
• /
• pp.249-254
• /
• 2008

We developed a new x-ray image sensor utilizing a reflection-mode liquid crystal panel as its sensitive element, and tested its functionality by using it to obtain an x-ray image of a printed circuit board. In the liquid crystal x-ray image sensors hitherto reported, the liquid crystal layer is in direct contact with the photoconductive film which is deposited on a glass substrate. In the fabrication of the new x-ray image sensor, a liquid crystal panel is fabricated in the first step by using a pair of glass plates of a few centimeters thicknrss. Then one of the glass substrates is ground until its thickness is reduced to about $60\;{\mu}m$. After polishing the glass plate, dielectric films for high reflectance at 630 nm, a film of amorphous selenium for photoconduction, and a transparent conductive film for electrode are deposited in sequence. The new x-ray image sensor has several merits: primarily, fabrication of a large area sensor is more easily compared with the old fashioned x-ray image sensors. Since the reflection type liquid crystal panel has a very steep response curve, the new x-ray sensor has much more sensitivity to x-rays compared with the conventional x-ray area sensor, and the radiation dosage can be reduced down to less then 20%. By combining the new x-ray sensor with CCD camera technology, real-time x-ray images can be easily captured. We report the structure, fabrication process and characteristics of the new x-ray image sensor.

• Journal of Powder Materials
• /
• v.26 no.1
• /
• pp.40-44
• /
• 2019

Tungsten trioxide ($WO_3$) is a promising candidate as a photocatalyst because of its outstanding electrical and optical properties. In this study, we prepare $WO_3$ thin films by electrodeposition and characterize the photocatalytic degradation of methylene blue using these films. Depending on the voltage conditions (static and pulse), compact and porous $WO_3$ films are fabricated on a transparent ITO/glass substrate. The morphology and crystal structure of electrodeposited $WO_3$ thin films are investigated by scanning electron microscopy, atomic force microscopy, and X-ray diffraction. An application of static voltage during electrodeposition yields a compact layer of $WO_3$, whereas a highly porous morphology with nanoflakes is produced by a pulse voltage process. Compared to the compact film, the porous $WO_3$ thin film shows better photocatalytic activities. Furthermore, a much higher reaction rate of degradation of methylene blue can be achieved after post-annealing of $WO_3$ thin films.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
• /
• v.18 no.1
• /
• pp.1-12
• /
• 2013

Acoustic backscatter profiles were measured by Eco-sounder along an east-west section in the mid-eastern Yellow Sea and at an anchoring station in the low salinity region off the Keum River estuary in September 2012, with observing physical water property structure by CTD. Tidal front was established around the sand ridge developed in 50 m depth region. Internal waves measured by Eco-sounder during low tide period in the eastern side of the sand ridge were nonlinear depression waves with wave height of 15 m and mean wavelength of 500 m. These waves were interpreted into tidal internal waves that were produced by tidal current flowing over the sand ridge to the southeast. When weakly non-linear soliton model was applied, propagation speed and period of these internal depression wave were 50 m/s and 16~18 min. Red tides by Dinoflagelates Cochlodinium were observed in the sea surface where strong acoustic scattering layer was raised up to 7 m. Hourly CTD profiles taken at the anchoring station off the Keum River estuary showed the halocline depth change by tidal current and land-sea breeze. When tidal current flowed strongly to the northeast during flood period and land-breeze of 7 m/s blew to the west, the halocline was temporally raised up as much as 2 m and acoustic profile images showed a complex structure in the surface layer within 5-m depth: in tens of seconds the declined acoustic structure of strong and weak scattering signals alternatively appeared with entrainment and intrusion shape. These acoustic profile structures in the surface mixed layer were observed for the first time in the coastal sea of the mid-eastern Yellow Sea. The acoustic profile images and turbidity data suggest that relatively transparent low-layer water be intruded or entrained into the turbid upper-layer water by vertical shear between flood current and land breeze-induced surface current.

• Journal of Korean Society of Environmental Engineers
• /
• v.28 no.11
• /
• pp.1180-1185
• /
• 2006

Lab-scale batch experiments using several 25-L transparent acrylic reactors were conducted to develop optimum capping materials that can reduce phosphorus released from polluted sediments. The sediment used in the experiment was very fine clay(8.8 $\Phi$ in mean grain size), and organic carbon($C_{org}$) content was as high as 2%. Four kinds of batches with different capping materials Brucite($Mg(OH)_2$), Sea sand($SiO_2$), Granular-gypsum($CaSO_4{\cdot}2H_2O$), Double layer(brucite+sand), and one control batch were operated for 30 days. Phosphorus fluxes released from bottom sediments in the control batch were estimated to be 14.6 $mg{\cdot}m^{-2}{\cdot}d^{-1}$, while 9.5 $mg{\cdot}m^{-2}{\cdot}d^{-1}$, 5.2 $mg{\cdot}m^{-2}{\cdot}d^{-1}$, 4.2 $mg{\cdot}m^{-2}{\cdot}d^{-1}$, and 3.1 $mg{\cdot}m^{-2}{\cdot}d^{-1}$ in the batch capped with Sea sand, Granular-gypsum, Double layer, and Brucite, respectively. The results obtained from lab-scale batch experiments show that there were 70% reduction of phosphorus for some materials such as Brucite, Double layer(brucite+sand), and whereas sea sand only about 35%. The pH range of surface sediment to which Brucite was applied showed about $8.0{\sim}9.5$ in the weak alkaline state. This effect can prevent liberation of $H_2O$. The addition of gypsum into the sediment can reduce the progress of methanogenesis because of fast early diagenesis and sufficient supply of $SO_4^{2-}$ to the sediments, stimulate the SRB highly. Therefore, the application of Brucite and Gypsum can reduce phosphorus release from the sediment as a result of formation of $Mg_5(OH)(PO_4)_3$, pyrite($FeS_x$), and apatite-mineral.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.5-5
• /
• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.137-137
• /
• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.35 no.1
• /
• pp.17-22
• /
• 2011

ZnO-based thin-film transistors (TFTs) have been fabricated and the mechanical characteristics of electric circuits, such as stress, strain, and deformation are analyzed by the finite element method (FEM). In this study, a mechanical-stability design guide for such systems is proposed; this design takes into account the stress and deformation of the bridge to estimate the stress distribution in an $SiO_2$ film with 0 to 5% stretched on 0.5-${\mu}m$-thick. The predicted buckle amplitude of $SiO_2$ bridges agrees well with experimental results within 0.5% error. The stress and strain at the contact point between bridges and a pad were measured in a previous structural analysis. These structural analysis suggest that the numerical measurement of deformation, SU-8 coating thickness for Neutral Mechanical Plane (NMP) and ITO electrode size on a dielectric layer was useful in enhancing the structural and electrical stabilities.